The present invention relates inter alia to a color display comprising nanoparticles and color filters.

An optical device comprising: a quantum dot, said quantum dot comprising InAs and adapted to emit radiation in the wavelength range from 1200 nm to 2000 nm; a supporting layer supporting said quantum dot, said supporting layer being lattice matched to InP; and wherein the longest dimension of the base of the quantum dot provided parallel to the supporting layer is within 20% of the shortest dimension of the base provided parallel to the supporting layer.

Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.

Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

An object of the present invention is to provide a semiconductor nanoparticle having high emission efficiency and excellent durability; a method of producing the same; and a dispersion liquid and a film obtained by using a semiconductor nanoparticle. The semiconductor nanoparticle of the present invention is a semiconductor nanoparticle in which oxygen, zinc, and sulfur are detected by X-ray photoelectron spectroscopy analysis and a peak (I.sub.CH3) which is derived from a hydrocarbon group and present in a range of 2800 cm.sup.1 to 3000 cm.sup.1 and a peak (I.sub.COO) which is derived from COO.sup. and present in a range of 1400 cm.sup.1 to 1600 cm.sup.1 are detected by Fourier transform infrared spectroscopy analysis.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area, the forming including: exposing the first area of the surface to light having a first wavelength while exposing the first area to a quantum dot forming environment that causes the quantum dots in the first area to form at a first growth rate while the quantum dots have a dimension less than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to the quantum dot forming environment that causes the quantum dots in the second area to form at a third growth rate while the quantum dots have a dimension less than a second threshold dimension; and processing the layer to form the LED device.