The present invention relates inter alia to a color display comprising nanoparticles and color filters.

A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

A layered structure including a luminescent layer including a quantum dot polymer composite pattern; an inorganic layer disposed on the luminescent layer, the inorganic layer including a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof; and an organic layer being disposed between the luminescent layer and the inorganic layer, the organic layer including an organic polymer, a method of producing the same, and a liquid crystal display including the same. The quantum dot polymer composite pattern includes a repeating section including a polymer matrix; and a plurality of quantum dots (e.g., dispersed) in the polymer matrix, the repeating unit including a first section configured to emit light of a first light, and wherein the inorganic layer is disposed on at least a portion of a surface of the repeating section.

Disclosed herein are embodiments of a coated type-I quantum dot comprising a core and a shell, and a silica layer, and a method for making the quantum dot. The quantum dot may be a thick-shelled quantum dot. Also disclosed are embodiments of a composition comprising one or more coated quantum dots and a polymer. The composition may be a luminescent solar concentrator. Device comprising the composition are disclosed. The device may comprise the composition, such as a luminescent solar concentrator, applied to a substrate, such as glass. The device may be a window or a solar module. Also disclosed is a method of applying the composition to the substrate to form a thin film luminescent solar concentrator.

The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q.sup.1,Q.sup.2,Q.sup.3,R.sup.1,R.sup.2,R.sup.3,R.sup.5, and X are defined within the specification.

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.

A nanoparticle phosphor element includes a capsule-shaped material that has a plurality of concave portions in a surface, a medium that is sealed in the capsule-shaped material, and a semiconductor nanoparticle phosphor that is dispersed in the medium, and a light emitting element includes a sealing material, and the nanoparticle phosphor element of the disclosure that is dispersed in the sealing material.

Examples are disclosed that relate to an ultrafiltration system for quantum-dot (QD) purification. The ultrafiltration system comprises a pump having a low-pressure side and a high-pressure side, a size-exclusion membrane having a low-pressure side and a high-pressure side, and an inlet/outlet arrangement. An inlet arranged on the high-pressure side of the size-exclusion membrane is coupled fluidically to the high-pressure side of the pump. A product-enriched outlet is arranged on the high-pressure side of the size-exclusion membrane, fluidically downstream of the inlet. A product-depleted outlet is arranged on the low-pressure side of the size-exclusion membrane.

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.