The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

The invention disclosed concerns a simple ring-hub arrangement of interacting two-level systems using a theoretical quantum jump approach which mimics a biological light-harvesting antenna connected to a reaction center.

The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.

A method of synthesizing two-dimensional (2D) nanoparticles of transition metal dichalcogenide (TMDC) material utilises a molecular cluster compound. The method allows a high degree of control over the shape, size and composition of the 2D TMDC nanoparticles, and may be used to produce material with uniform properties in large quantities.

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.

The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.