Patent classifications
Y10T117/1012
Microfluidic free interface diffusion techniques
A static fluid and a second fluid are placed into contact along a microfluidic free interface and allowed to mix by diffusion without convective flow across the interface. In accordance with one embodiment of the present invention, the fluids are static and initially positioned on either side of a closed valve structure in a microfluidic channel having a width that is tightly constrained in at least one dimension. The valve is then opened, and no-slip layers at the sides of the microfluidic channel suppress convective mixing between the two fluids along the resulting interface. Applications for microfluidic free interfaces in accordance with embodiments of the present invention include, but are not limited to, protein crystallization studies, protein solubility studies, determination of properties of fluidics systems, and a variety of biological assays such as diffusive immunoassays, substrate turnover assays, and competitive binding assays.
Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus
A method for calculating a height position of a silicon melt surface at the time of pulling a CZ silicon single crystal is disclosed, including: obtaining a first crystal diameter measured from a fusion ring on a boundary of the silicon melt and the silicon single crystal by using a CCD camera installed at an arbitrary angle relative to the silicon single crystal, and a second crystal diameter measured by using two CCD cameras installed parallel to both ends of a crystal diameter of the silicon single crystal; and calculating the height position of the silicon melt surface in the crucible during pulling of the silicon single crystal from a difference between the first crystal diameter and the second crystal diameter. As a result, a method for enabling further accurately calculating a height position of a silicon melt surface at the time of pulling a silicon single crystal is provided.