A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot in such ingot puller apparatus are disclosed. In some embodiments, the side heater is relatively short. The side heater may be fully above a floor of the crucible when the crucible is in its lowest position in the ingot puller.

An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and configured to generate a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater, and a rotation mechanism.

The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and generates a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater for heating the raw material reaction chamber, the raw material nozzle, the nitrogen source nozzle, and the board-holding member, and a rotation mechanism for rotating the board-holding member.

Apparatuses and methods are provided for manufacturing diamond electronic devices. The apparatus includes a base comprising a water-block and a cover that at least partially covers the water-block. The apparatus includes a sample stage disposed on the base. The apparatus further includes a sample holder disposed on the sample stage and configured to accept a diamond substrate. The apparatus includes controlled thermal interfaces between water-block, sample stage, sample holder and diamond substrate.

Apparatuses and methods are provided for manufacturing diamond electronic devices. The apparatus includes a base comprising a water-block and a cover that at least partially covers the water-block. The apparatus includes a sample stage disposed on the base. The apparatus further includes a sample holder disposed on the sample stage and configured to accept a diamond substrate. The apparatus includes controlled thermal interfaces between water-block, sample stage, sample holder and diamond substrate.

The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

A furnace and a method of growing a high temperature oxide crystal in the furnace. The furnace includes a crucible having a melt therein and a heating element for generating heat in the melt. A thermal element within the furnace produces a thermal gradient within the melt to draw a cold spot of a convection cell of the melt away from a seed location of the crucible. A seed crystal is drawn from the melt at the seed location to form a boule to grow the high temperature oxide crystal.

A furnace and a method of growing a high temperature oxide crystal in the furnace. The furnace includes a crucible having a melt therein and a heating element for generating heat in the melt. A thermal element within the furnace produces a thermal gradient within the melt to draw a cold spot of a convection cell of the melt away from a seed location of the crucible. A seed crystal is drawn from the melt at the seed location to form a boule to grow the high temperature oxide crystal.