A controller-transmitter transmits acoustic energy through the body to an implanted acoustic receiver-stimulator. The receiver-stimulator converts the acoustic energy into electrical energy and delivers the electrical energy to tissue using an electrode assembly. The receiver-stimulator limits the output voltage delivered to the tissue to a predetermined maximum output voltage. In the presence of interfering acoustic energy sources output voltages are thereby limited prior to being delivered to the tissue.

The invention relates to ultrasound imaging method and apparatus suitable for minimally invasive ultrasound diagnostic devices in cardiac ablation monitoring and in tumor ablation monitoring. The present invention proposes an assembly of forward and side-facing transducers and a system of embedded forward and side-facing transducers in apertures on surfaces of the assembly. This provides control of the acoustic properties of the transducer and improved ablation monitoring when the assembly is incorporated in a medical device.

A preparation method tor a piezoelectric fiber is provided including a piezoelectric functional layer and an insulating layer coated on the piezoelectric functional layer. The piezoelectric functional layer includes a piezoelectric composite layer of a spiral winding structure, and the piezoelectric composite layer includes a first piezoelectric layer, a conductive layer and a second piezoelectric layer that are sequentially stacked. The preparation method piezoelectric composite layer in a direction perpendicular to the winding axis to form the piezoelectric functional layer, wherein turns of winding the piezoelectric composite layer are greater than 5, coating the piezoelectric functional layer with the insulating layer, and vacuum heating to consolidate, to prepare a preform rod.

A system for separating terminals (e.g., electrical terminals) from a terminal strip includes a shear tool movably mounted to a frame for selectively shearing the terminal from the terminal strip. A primary shear depressor is provided for driving the shear tool from an initial position to an intermediate position during which the terminal is sheared from the terminal strip. A secondary shear depressor is movably mounted to the primary shear depressor for driving the shear tool from the intermediate position after the terminal has been sheared from the terminal strip, to a final position.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.

A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.

A method of manufacturing a bonded substrate, which has a quartz substrate and a piezoelectric substrate bonded, includes irradiating a bonding surface of the quartz substrate and a bonding surface of the piezoelectric substrate with ultraviolet light under a pressure lower than atmosphere pressure. After the irradiation, the bonding surface of the quartz substrate and the bonding surface of the piezoelectric substrate are brought into contact. And the quartz substrate and the piezoelectric substrate are pressurized in a thickness direction to bond the bonding surfaces.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.