An electronic switching element (1) which comprises, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of compounds of the formula I indicated in claim 1, in which a mesogenic radical is bonded to the substrate via a spacer group (Sp) by means of an anchor group (G), is suitable for the production of components (1) as memristive device for digital information storage.

A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.

A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC).sub.n where n2. A second embodiment is represented by (NBC/BC).sub.n/NBC where n1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is <100 Angstroms. The free layer configuration described herein enables a significant noise reduction (SNR enhancement) while realizing a high TMR ratio, low magnetostriction, low RA, and low Hc values.

A managed print service (MPS) system is used to analyze the costs associated with creating hardcopies on document output devices in end user customer environments, develop proposals to optimize the placement and use of document output devices based on the end user customer's desired workflow, and manage the resulting optimized document output device fleet in the replenishment of supplies. MPS providers can also use the system to manage break/fix services to maintain the uptime, or availability, of the fleet of document output devices. The system provides a predictive supplies replenishment module that accounts for variations in user behaviors when determining whether a replacement supply is needed and identifies replacement supplies according to multiple trigger thresholds that are based on calculations of the remaining days of the supplies in the devices. The system also provides device-specific routing labels for different supply parts that are sent to the same shipping address.