Patent classifications
Y10T428/1107
Magnetic shield, semiconductor device, and semiconductor package
Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.
Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same
A spin-transfer torque magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL. The second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
Magnetic recording medium having characterized magnetic layer and magnetic recording and reproducing device
Provided are a magnetic recording medium, in which a magnetic layer includes a ferromagnetic hexagonal ferrite powder, a binding agent, an oxide abrasive, an intensity ratio Int(110)/Int(114) obtained by an X-ray diffraction analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical squareness ratio is 0.65 to 1.00, one or more kinds of component selected from the group consisting of fatty acid and fatty acid amide is contained in a magnetic layer side portion on the non-magnetic support, a CH derived C concentration of the magnetic layer is 45 atom % to 65 atom %, and an average particle diameter of the oxide abrasive obtained from a secondary ion image obtained by irradiating the surface of the magnetic layer with a focused ion beam is 0.04 m to 0.08 m, and a magnetic recording and reproducing device including this magnetic recording medium.
Magnetic recording medium having characterized magnetic layer and magnetic recording and reproducing device
Provided are a magnetic recording medium, in which a magnetic layer includes ferromagnetic hexagonal ferrite powder, a binding agent, and an oxide abrasive, an intensity ratio Int(110)/Int(114) obtained by an X-ray diffraction analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical squareness ratio of the magnetic recording medium is 0.65 to 1.00, a logarithmic decrement acquired by a pendulum viscoelasticity test performed regarding a surface of the magnetic layer is equal to or smaller than 0.050, and an average particle diameter of the oxide abrasive obtained from a secondary ion image obtained by irradiating the surface of the magnetic layer with a focused ion beam is 0.04 m to 0.08 m, and a magnetic recording and reproducing device including this magnetic recording medium.
Semiconductor package
Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.
MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING AND REPRODUCING DEVICE
Provided are a magnetic recording medium, in which a magnetic layer includes a ferromagnetic hexagonal ferrite powder, a binding agent, an oxide abrasive, an intensity ratio Int(110)/Int(114) obtained by an X-ray diffraction analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical squareness ratio is 0.65 to 1.00, one or more kinds of component selected from the group consisting of fatty acid and fatty acid amide is contained in a magnetic layer side portion on the non-magnetic support, a CH derived C concentration of the magnetic layer is 45 atom % to 65 atom %, and an average particle diameter of the oxide abrasive obtained from a secondary ion image obtained by irradiating the surface of the magnetic layer with a focused ion beam is 0.04 m to 0.08 m, and a magnetic recording and reproducing device including this magnetic recording medium.
MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING AND REPRODUCING DEVICE
Provided are a magnetic recording medium, in which a magnetic layer includes ferromagnetic hexagonal ferrite powder, a binding agent, and an oxide abrasive, an intensity ratio Int(110)/Int(114) obtained by an X-ray diffraction analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical squareness ratio of the magnetic recording medium is 0.65 to 1.00, a logarithmic decrement acquired by a pendulum viscoelasticity test performed regarding a surface of the magnetic layer is equal to or smaller than 0.050, and an average particle diameter of the oxide abrasive obtained from a secondary ion image obtained by irradiating the surface of the magnetic layer with a focused ion beam is 0.04 m to 0.08 m, and a magnetic recording and reproducing device including this magnetic recording medium.
Three-dimensional magnetic memory with multi-layer data storage layers
Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.
SEMICONDUCTOR PACKAGE
Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.