An Fe—Co—Al alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The Fe—Co—Al alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The Fe—Co—Al alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth ΔH at 30 GHz of less than 70 Oe.

Described are magnetic recording heads that include an overcoat that includes a titanium oxynitride (TiON) layer.

Described are magnetic recording heads that include an overcoat that includes a titanium oxynitride (TiON) layer.

A recording head includes a structure such as a near-field transducer formed of a noble metal. An adhesive layer is formed over a surface of the structure. The adhesive layer includes alumina and is 4 nm or less in thickness. A silicon dioxide layer is formed over the adhesive layer. The adhesive layer bonds the silicon dioxide to the structure.

Described are magnetic recording heads that include an overcoat that includes a titanium oxynitride (TiON) layer.

An FeCoAl alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The FeCoAl alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The FeCoAl alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth H at 30 GHz of less than 70 Oe.

A cover window is provided and includes a substrate and a coating layer. The substrate has a thickness of 60 to 120 m. The substrate has a Re of 6000 to 12000. The coating layer is coated on the substrate. The cover window has a first direction and a second direction. The first direction is a machine direction of the cover window. The second direction is perpendicular to the first direction. A tensile stress of 50 to 130 MPa is exerted in the first direction. A tensile stress of 140 to 300 MPa is exerted in the second direction. Since the substrate has a Re of 6000 to 12000, a penetrating ray of an incident ray is uniformly distributed on a visible region of the cover window, so as to reduce the phase difference between reflected rays, reduce rainbow patterns, and enhance visibility under a polarizer.

Disclosed are memory cells that include a crosslinked mixture of a photoinitiator, a polyether-modified acrylate oligomer, a polyester acrylic resin, and a component selected from the group consisting of a silicone acrylate oligomer, and a fluorinated acrylate oligomer, and memory devices that contain a plurality of memory cells.

A first layer that includes a metal seed layer, a refractive seed or a refractive dopant is formed on a dielectric substrate. A peg of a near-field transducer is formed on the first layer such that a first surface of the peg is formed on and is in contact with the metal seed. An adhesive layer is formed over the peg using atomic layer deposition. The adhesive layer includes alumina and is 4 nm or less in thickness. A silicon dioxide overcoat is deposited over the adhesive layer. The alumina bonds the silicon dioxide to the peg.

Disclosed are memory cells that include a crosslinked mixture of a photoinitiator, a polyether-modified acrylate oligomer, a polyester acrylic resin, and a component selected from the group consisting of a silicone acrylate oligomer, and a fluorinated acrylate oligomer, and memory devices that contain a plurality of memory cells.