The present disclosure provides a composite coating and a method for fabricating the composite coating. The composite coating comprises a polymer layer, a metal interlayer and an amorphous metal coating. The polymer layer is formed on a substrate and acts as a diffusion barrier layer, which is thick and dense enough to prevent the corrosive substances from penetrating into the substrate. The metal interlayer is formed between the polymer layer and the amorphous metal coating for improving the adhesion of the amorphous metal coating to the substrate.

The present disclosure provides a composite coating and a method for fabricating the composite coating. The composite coating comprises a polymer layer, a metal interlayer and an amorphous metal coating. The polymer layer is formed on a substrate and acts as a diffusion barrier layer, which is thick and dense enough to prevent the corrosive substances from penetrating into the substrate. The metal interlayer is formed between the polymer layer and the amorphous metal coating for improving the adhesion of the amorphous metal coating to the substrate.

Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m.sup.2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in m) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.