METHOD OF MANUFACTURING PRINTED CIRCUIT BOARD

Abstract

The present invention comprises a step of forming bump pads on the surface of the substrate, covering the whole surface with a second insulating layer, forming a copper barrier on the surface of a second insulating layer, forming a third insulating layer, and forming a copper layer for an electrical circuit. A mask is formed on the copper layer of the external circuit in such a way that only the region for the cavity is exposed. The cavity is formed by laser-drilling only the surface-exposed area of the third insulating layer. The copper layer at the bottom protects the second insulating layer and bump pads underneath from laser damages. The copper barrier is removed by chemical etch once the laser drill is over. The second insulating layer will be removed via sand blast process, exposing the bump pads which were fabricated in the earlier steps.

Claims

1. A fabricating method of the Printed Circuit Board, comprising the steps of: (a) forming a first copper layer with circuit pattern including bump pads on a first insulating layer wherein the cavity is going to be made; (b) forming a second insulating layer and a copper layer on the surface of the resulting structure of the step (a); (c) forming a copper barrier on top of the second insulating layer by selectively etching the second copper layer in accordance with the predetermined circuit pattern; (d) forming a third insulating layer on the surface of the resulting structure of the step (c); (e) forming a third copper layer with circuit pattern on top of the third insulating layer; (f) opening a cavity by selectively etching the third insulating layer via laser drill; (g) preparing an etch mask which defines the cavity area; (h) eliminating the copper barrier by etching the exposed area through the etch mask; (i) selectively etching the exposed surface of the second insulating layer via sand blast process, thereby exposing the bump pads formed on the first insulating layer at the bottom of the cavity.

2. The method as set forth in claim 1, characterized in that the second insulating layer is a resin having no glass fibers while the third insulating layer is a resin having glass fibers.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] FIGS. 1a, 1b, and 1c are diagrams illustrating the cavity wherein the semiconductor chip is embedded according to the prior art.

[0017] FIGS. 2a through to 2f are schematic diagrams which illustrate the cavity manufacturing process in accordance with the invention.

DETAILED DESCRIPTION OF THE INVENTION

[0018] Detailed descriptions will be made on preferred embodiments and constitutional features of the fabricating method in accordance with the present invention with reference to attached figures from FIG. 2a to FIG. 2f.

[0019] The starting material in accordance with a preferred embodiment of the present invention is a structure comprising a first insulating layer such as resin or epoxy resin, of which the surface is coated with a copper layer. As a preferred embodiment of the present invention, a CCL (copper cladded laminate) or carrier copper can be utilized for coreless process.

[0020] FIG. 2a is a schematic diagram illustrating the intermediate step of manufacturing the package substrate in accordance with the present invention. Referring to FIG. 2a, a first copper layer with circuit pattern transferred is formed on the surface of the first insulating layer 100. By processing the image process comprising dry film coating, exposure, development, and etch, a general circuit 110a and a bump pad 110b are simultaneously formed on the surface of the first insulating layer 100.

[0021] A second insulating layer and a second copper layer are stacked on the layer comprising the general circuitry 110a and the bump pad 110b. As a preferred embodiment of the second insulating layer, it is recommended to employ a special resin not having glass fibers but only with pillars. Since the second insulating layer in accordance with the present invention does not include glass fibers, it is possible to etch the second insulating layer with a sand blast process.

[0022] Now a copper barrier 130 is formed by selectively etching the second copper layer in accordance with the pre-determined circuit pattern. Approximately, the region wherein the copper barrier 130 remains to exist after the selective etch works corresponds to a cavity area. Thereafter, a third insulating layer 140 of resin or of general epoxy resin is coated. As a preferred embodiment of the third insulating layer, PREPREG can be used.

[0023] Here, we should note that the second insulating layer 130 can be etched away during the sand blast etching process while the third insulating layer 140 is not vulnerable during the sand blast etching process due to the fact that the third insulating layer 140 includes the fiber glasses. If needed, via-holes can be made for interconnections, followed by electroplating for making the external electrical circuit.

[0024] Referring to FIG. 2a, we can see that the copper circuit 150 comprising the external layer of the substrate exposes the surface of the third insulating layer 140 corresponding to the cavity area while the other area is covered with a protection layer 160 such as the solder resist.

[0025] Referring to FIG. 2b, we open a cavity by laser ablation at the exposed surface of the third insulating layer. In this case, the bottom copper layer 130 protects the underneath layer from being damaged during the laser ablation.

[0026] Thereafter, referring to FIG. 2c, we coat a mask layer such as dry film and prepare an etch mask 170 via imaging process like photo, development, and etch in such a way that the copper barrier 130 as well as the cavity region should be selectively exposed. Now, the copper barrier 130 while the other surface area is covered with the etch mask 170 can be removed by chemical wet etch. FIG. 2d is a diagram illustrating the cross sectional view of the substrate when the second insulating layer is exposed after the copper barrier 130 is eliminated.

[0027] Referring to FIG. 2e, the second insulating layer 130 of which the surface is exposed by the etch mask window 170 is now removed via sand blast process. Consequently, the bump pad 110b at the bottom surface of the cavity is now exposed on the first insulating layer 100. Referring to FIG. 2f, the etch mask 170 is peeled off.

[0028] Finally, referring to FIG. 2f, we can see that we have bump pads 110b which can be used for flip-chip bonding.

[0029] The aforementioned somewhat widely improves the characteristics and technical advantages of the present invention so that the scope of the invention to be described later can be more clearly understood. The additional characteristics and technical advantages that constitute the scope of the present invention will be described below. The features that the disclosed concept and specific embodiments of the present invention can be instantly used as a basis designing or correcting other structure for accomplishing a similar object with the present invention should be recognized by those skilled in the art.

[0030] Further, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.