METHOD FOR DIRECT ADHESION VIA LOW-ROUGHNESS METAL LAYERS

Abstract

A method for assembling a first substrate and a second substrate via metal adhesion layers, the method including: depositing, on a surface of each of the first and second substrates, a metal layer with a thickness controlled to limit surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at an end of the depositing. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.

Claims

1-14. (canceled)

15. A method for assembling a first substrate and a second substrate via metal bonding layers, comprising: depositing, onto a surface of each of the first and second substrates, a metal layer having a thickness which is controlled to limit surface roughness of the metal layer below a roughness threshold; exposing the metal layers to air; directly bonding the first and second substrates by contacting the metal layers, the surface roughness of the contacted metal layers being that obtained at an end of the depositing.

16. The method according to claim 15, wherein the bonding is implemented after a maximum time of exposition of the metal layers to the air less than 30 minutes.

17. The method according to claim 15, wherein the bonding is made at a temperature less than 50° C.

18. The method according to claim 15, wherein the bonding is made at atmospheric pressure.

19. The method according to claim 15, wherein the bonding is made in air.

20. The method according to claim 15, wherein the bonding is made without applying pressure to the assembly of the first and second substrates resulting from contacting the metal bonding layers.

21. The method according to claim 15, further comprising, before the depositing the metal layer onto the surface of the first substrate, forming a superficial layer on the first substrate.

22. The method according to claim 21, wherein the superficial layer is a barrier layer to diffusion of material of the metal layer into the first substrate.

23. The method according to claim 21, wherein the superficial layer is a layer of a material chosen from dielectrics, nitrides, or metals with surface roughness that does not enable the first and second substrates to be directly bonded.

24. The method according to claim 15, wherein the first and second substrates have different thermal expansion coefficients.

25. The method according to claim 15, wherein the metal layers are deposited by physical vapor deposition.

26. The method according to claim 15, wherein the metal layers are copper layers having a thickness which is controlled to limit their surface roughness, as measured with an atomic force microscope scanning an area of 1*1 μm.sup.2, below a roughness threshold of 1.0 nm RMS.

27. The method according to claim 15, wherein the metal layers are gold layers having a thickness which is controlled to limit their surface roughness, as measured with an atomic force microscope scanning an area of 1*1 μm.sup.2, below a roughness threshold of 1.2 nm RMS.

28. The method according to claim 15, further comprising, prior to the bonding, forming, by implanting atomic species, an embrittling zone within the first substrate and, following the bonding, removing a portion of the first substrate by separating the first substrate at the embrittling zone.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Further aspects, purposes, advantages and characteristics of the invention will better appear upon reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made in reference to the appended drawings in which:

[0031] FIG. 1a-1c are schemes illustrating the steps of a possible embodiment of the method according to the invention;

[0032] FIGS. 2a and 2b illustrate the surface roughness of metal layers, respectively of gold and copper, as a function of the thickness deposited onto a silicon substrate covered with a titanium nitride superficial layer;

[0033] FIGS. 3a and 3b illustrate bonding silicon substrates by directly contacting molybdenum superficial layers and by directly contacting gold metal layers deposited onto such molybdenum layers;

[0034] FIG. 4 illustrates bonding phenomena during and after directly contacting the gold metal layers of FIG. 3b.

DETAILED DISCLOSURE OF PARTICULAR EMBODIMENTS

[0035] In reference to FIG. 1a to 1c, the invention relates to a method for assembling a first substrate 1 and a second substrate 3 via metal bonding layers 2, 4. The substrates 1, 3 are made of materials generally chosen from semi-conductor, metal or ceramic materials used in the microelectronic industry. The substrates are not necessarily of an identical nature, and could in particular have different thermal expansion coefficients at least in one of the orientations of the substrates, typically coefficients differing by at least 10% or 20% at room temperature. By way of illustrating examples, the first substrate can be a silicon substrate and the second substrate can be a quartz or lithium niobate substrate.

[0036] As illustrated in FIG. 1a, the method comprises a step of depositing, onto the surface of each of the first and second substrates 1, 3, a metal layer 2, 4, for example by Physical Vapour Deposition (PVD).

[0037] The metal layer 2, 4 deposited onto the surface of each of the substrates 1, 3 is for example an aluminium, gold, silver, titanium or copper layer.

[0038] In a possible embodiment, the method comprises, before depositing a metal layer onto the surface of one of the substrates, for example the first substrate, a step of forming a superficial layer on said substrate. The superficial layer is for example a metal layer or an oxide layer. The superficial layer can for example be a barrier layer to the diffusion of the material of the metal layer into the substrate, for example a titanium nitride or tantalum nitride superficial layer. The superficial layer can also be a layer of a material chosen from dielectrics, nitrides or metals the surface roughness of which does not enable the first and second substrates to be directly bonded.

[0039] Within the scope of the present invention, the deposited metal layers 2, 4 are each of a controlled thickness to limit the surface roughness of each of the deposited metal layers below a roughness threshold.

[0040] It is known that the higher the thickness of a deposited metal layer is the more the surface roughness of the metal layer increases. Thereby, depending on the surface roughness of the first and second substrates 1, 3, those skilled in the art are quite able to adapt the deposited metal thickness such that the surface roughness of the deposited metal layers remains below the roughness threshold. This requirement results in practice in depositing very thin metal layers 2, 4, for example with thicknesses lower than 100 nm.

[0041] In FIGS. 2a and 2b, is represented the variation in the surface roughness, as measured with an atomic force microscope scanning an area of 1*1 μm.sup.2, of metal layers of gold and copper respectively as a function of the thickness deposited onto a silicon substrate covered with a titanium nitride superficial layer with a thickness of 20 nm. On each of these Fig., the zone surrounded by the dashed line represents the couples of parameters compatible with the direct bonding according to the invention.

[0042] Thus, when the metal layers are copper layers, their thickness is preferably controlled to limit their surface roughness, as measured with an atomic force microscope scanning an area of 1*1 μm.sup.2, below 1.0 nm RMS. This corresponds, for a continuous metal layer (full plate), to a surface roughness from peak to valley below about 10 nm.

[0043] In a similar way, when the metal layers are gold layers, their thickness is preferably controlled to limit their surface roughness, as measured with an atomic scanning microscope scanning an area of 1*1 μm.sup.2, below 1.2 nm RMS. This corresponds, for a continuous metal layer (full plate), to a surface roughness from peak to valley below about 12 nm.

[0044] Returning to the description of the method according to the invention, this includes following the formation of the metal layers, a step of exposing the metal layers 2, 4 deposited onto the surface of the first and second substrates 1, 3 to air. This air exposition makes the method according to the invention much easier to implement from an industrial point of view than techniques requiring to ensure a vacuum environment or a protecting atmosphere against metal oxidation. This air exposition is directly made after forming the metal layers, that is without carrying out an intermediate technological step which would modify surface physico-chemical characteristics of the metal layers, in particular their roughness.

[0045] Then in reference to FIG. 1b, the method includes a step of bonding the first and second substrates 1, 3 by directly contacting the deposited metal bonding layers 2, 4 which surface roughness is limited by the depositing step. The surface roughness of the layers directly contacted thus directly comes from the depositing step, without requiring a CMP type polishing or any other operation that modifies the surface roughness. Thus, the method does not include a step modifying the surface roughness after the metal layers are formed, such as a CMP polishing step, to achieve bonding, the surface roughness of the directly contacted layers being that obtained at the end of the depositing step.

[0046] Within the scope of the present invention, the terms direct bonding and bonding by direct contact are equivalent.

[0047] This bonding step is implemented after a maximum air exposition time of the deposited metal layers following said air exposition which is preferably lower than 30 minutes, further preferably lower than 20 minutes. It is directly implemented after the air exposure step, that is without carrying out an intermediate technological step which would modify the surface physico-chemical characteristics of the metal layers, in particular their roughness.

[0048] The bonding step can in particular be made at a temperature lower than 50° C., in particular at room temperature, for example between 10° C. and 30° C. It can further be made at atmospheric pressure, in particular in air. It can also be made without applying pressure to the assembly of the first and second substrates resulting from contacting the metal bonding layers, the adhesion simply resulting from the substrates moving closer to each other.

[0049] At the end of the bonding step, and as schematically represented in FIG. 1c, no bonding interface is observed between the metal layers 2, 4 but finally there is a single metal layer 5 between the first and second substrates 1, 3. The bonding is thus reflected by a reconstruction of the bonding interface (that is a grain interpenetration through the bonding interface), wherein no continuous layer of metal oxide is detected at the interface.

[0050] Without wishing to be bound to any scientific theory, the following hypothesis for the mechanism enabling such a bonding to be made can be put forward: [0051] Carrying out the deposition of the thin metal layer, the air exposure and the contact of the surfaces one after the other prevents or restricts the formation of a layer of metal oxide or a layer of surface-adsorbed hydrocarbons, which leaves the possibility to create metal bonds at room temperature. This hypothesis is in particular supported by measurements of high adhesion works indicating a change in the adhesion regimen. The attractive forces being involved are thus stronger than in the conventional case wherein van der Waals forces govern the adhesion. [0052] The nature of both metals used in the method according to the invention is particular: these are ductile materials. Thus, in the adhesion mechanism, since repulsive forces are related to the mechanical response of the asperities, these materials will tend to be better deformed under the action of attractive forces. The combined action of this easier deformation and stronger forces involved thus leads to further extend the roughness limit compatible with the direct bonding of these surfaces.

[0053] Beside making it possible to perform bonding requiring no ultra-vacuum atmosphere, no application of a thermal budget, no pressure application, no polishing, another interest of the invention relates to the assembly of superficial layers which have a roughness too high to enable them to be directly bonded.

[0054] By way of example, molybdenum superficial layers deposited onto Si substrates and the surface roughness of which of 0.8 nm RMS is too high to enable them to be assembled by direct contact as appears from FIG. 3a are considered. The bonding quality is evaluated by scanning acoustic microscopy: the zones with the brightest contrast are not bonded whereas the zones with the darkest contrast are. On the other hand, by depositing a fine gold layer with a 10 nm thickness onto a molybdenum layer, a surface roughness of 0.9 nm RMS lower than the roughness threshold of 1.2 nm RMS exemplified above is ensured, as well as a direct bonding resulting in a perfect assembly as appears from FIG. 3b.

[0055] In order to investigate phenomena after direct bonding of the structure of FIG. 3b, TEM (Transmission Electron Microscopy) cross-sections have been made and observed on the bonding of the Si—Mo—Au∥Au—Mo—Si structure. The left cross-section in FIG. 4 illustrates the structure immediately after contacting, reference RI indicating the initial roughness of the molybdenum layer. The centre cross-section and that on the right (where the dashed line is positioned at the original interface) of FIG. 4 illustrate the complete reconstruction of the gold layers and the disappearance of the bonding interface at room temperature. Since the gold surfaces have neither oxides nor hydrocarbons, they have made a real “atomic zip” of both surfaces. Finally, the ductility of the gold layers enabled Mo surfaces showing very high roughnesses to be bonded at the head of grains (in particular due to the columnar type Mo growth).

[0056] In a possible embodiment of the invention, the method comprises following bonding, a step of removing a portion of the first substrate. This removal can be made by mechanical and/or chemical thinning, or even by separating the first substrate at a previously embrittled zone, for example by implementing an ionic implantation. Thus, the method according to the invention can comprise, prior to bonding the substrates, forming by implanting atomic species an embrittling zone within the first substrate, and thinning, after bonding, the first substrate by separating said first substrate at the embrittling zone. By implementing in this way the Smart Cut™ technology within the scope of the method according to the invention, the transfer of a layer onto another substrate can be made, in particular in spite of different thermal expansion coefficients.