Ceramic circuit substrate

Abstract

A ceramic circuit substrate is suitable for silver nanoparticle bonding of semiconductor elements and has excellent close adhesiveness with a power module sealing resin. A ceramic circuit substrate has a copper plate bonded, by a braze material, to both main surfaces of a ceramic substrate including aluminum nitride or silicon nitride, the copper plate of at least one of the main surfaces being subjected to silver plating, wherein: the copper plate side surfaces are not subjected to silver plating; the thickness of the silver plating is 0.1 μm to 1.5 μm; and the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 1.5 μm.

Claims

1. A ceramic circuit substrate having a copper plate bonded, by a braze material, to both main surfaces of a ceramic substrate comprising aluminum nitride or silicon nitride, the copper plate of at least one of the main surfaces being directly subjected to silver plating, wherein: the copper plate side surfaces are not subjected to silver plating; the thickness of the silver plating is 0.1 μm to 1.5 μm; the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 1.5 μm; and the copper plate has a thickness of 0.8 mm or more.

2. A method for producing the ceramic circuit substrate as in claim 1, wherein the method involves carrying out electroless silver plating.

3. A power module in which semiconductor elements are bonded, using silver nanoparticles, on the silver plating of the ceramic circuit substrate as in claim 1.

4. The ceramic circuit substrate as in claim 1, which has a thickness of about 0.1 to 3.0 mm.

5. The ceramic circuit substrate as in claim 4, wherein the thickness is 1.0 mm or less.

6. The ceramic circuit substrate as in claim 1, wherein the copper plate has a thickness of 0.8 to 1.5 mm.

7. The ceramic circuit substrate as in claim 1, wherein the thickness of the silver plating is 0.3 μm to 1.0 μm.

8. The ceramic circuit substrate as in claim 1, wherein the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 1.0 μm.

9. The ceramic circuit substrate as in claim 1, wherein the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 0.46 μm.

10. The ceramic circuit substrate as in claim 1, wherein the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 0.36 μm.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 shows an example of a cross-section view of a ceramic circuit substrate.

(2) FIG. 2 shows an example of a cross-section view of a ceramic circuit substrate.

(3) FIG. 3 shows a planar view of a ceramic circuit substrate (planar view of FIG. 1).

DESCRIPTION OF EMBODIMENTS

(4) [Ceramic Circuit Substrate]

(5) The present invention is a ceramic circuit substrate having a copper plate bonded, by a braze material, to both main surfaces of a ceramic substrate comprising aluminum nitride or silicon nitride, the copper plate of at least one of the main surfaces being subjected to silver plating, wherein: the copper plate side surfaces are not subjected to silver plating; the thickness of the silver plating is 0.1 μm to 1.5 μm; and the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 μm to 1.5 μm.

(6) The ceramic substrate that is used in the ceramic circuit substrate of the present invention is not particularly limited, and it is possible to use a nitride ceramic such as silicon nitride or aluminum nitride, an oxide ceramic such as aluminum oxide or zirconium oxide, a carbide ceramic such as silicon carbide, or a boride ceramic such as lanthanum boride. However, a non-oxide ceramic such as aluminum nitride or silicon nitride is favorable for bonding a metal plate to a ceramic substrate by an active metal method, and furthermore, a silicon nitride substrate is preferable for the purpose of obtaining excellent mechanical strength and fracture toughness.

(7) In one embodiment of the present invention, the thickness of the ceramic substrate is not particularly limited, but is generally about 0.1 to 3.0 mm. In particular, considering the decrease in the thermal resistance of the circuit substrate overall, it is preferably 1.0 mm or less.

(8) In one embodiment of the present invention, the metal that is used in the metal plate is not particularly limited as long as it is a metal for which an active metal method can be applied, such as copper, aluminum, iron, nickel, chromium, silver, molybdenum, or cobalt, used singly or as an alloy. In particular, copper is preferred from the perspective of conductivity and heat dissipation properties.

(9) In one embodiment of the present invention, the purity of the copper plate is preferably 90% or higher. By setting the purity to be 90% or higher, the reaction between the copper plate and the braze material can be kept from being insufficient when bonding the copper plate to the ceramic substrate, and the copper plate can be kept from becoming hard and thereby lowering the reliability of the circuit substrate.

(10) In one embodiment of the present invention, the thickness of the copper plate is not particularly limited, but is generally about 0.1 to 1.5 mm. In particular, in view of the heat dissipation properties, it is preferably 0.3 mm or more, more preferably 0.5 mm or more, and even more preferably 0.8 mm or more.

(11) The thickness of the silver plating is preferably 0.1 μm to 1.5 μm and more preferably 0.3 μm to 1.0 μm. At a thickness of less than 0.1 μm, portions which are partially not silver plated arise, gaps are formed between a semiconductor and a copper body during semiconductor element bonding, and thermal resistance decreases. Further, at a thickness of 1.5 μm or more, the close adhesiveness of the silver plating may decrease.

(12) The arithmetic mean roughness Ra of the silver plated surface is preferably 0.1 μm to 1.5 μm and more preferably 0.1 μm to no greater than 1.0 μm. At a roughness of less than 0.1 processing of the copper surface is required and production costs become high. At a roughness exceeding 1.5 close adhesiveness between the semiconductor elements and the silver plating may decrease.

(13) Further, for a ceramic circuit substrate of one embodiment of the present invention, using a substrate that includes a comb-shaped electrode comprising a distance between patterns of 0.5 mm, the insulation resistance between patterns, after applying 1 kV DC for 500 hr in a constant-temperature constant-humidity chamber under an atmosphere of 85° C. and 93% RH, is preferably 1×10.sup.6Ω or more.

(14) Furthermore, the shear stress of a ceramic circuit substrate of one embodiment of the present invention, measured using a tensile tester after sandwiching an EMC resin between two circuit substrates and curing, is preferably a value of 20 kg/cm.sup.2 or more.

(15) [Method for Producing Ceramic Circuit Substrate]

(16) The method for producing the ceramic circuit substrate of the present invention is a production method which involves carrying out electroless silver plating.

(17) Thin film-formation is possible by silver plating, but electroless plating is preferred for its ability to further reduce film thickness variation within a surface.

(18) Conductor surfaces which are to be subjected to silver plating may be partially silver plated as shown in FIG. 1 or may be entirely silver plated as show in FIG. 2, but from the perspective of plating costs, partial plating is preferred.

(19) As a method for obtaining a structure in which conductor side surfaces are not subjected to silver plating, it is possible to employ a method in which circuit formation is carried out after a silver plating process or a method in which a desilvering process is carried out after circuit formation.

(20) EMC resins have excellent close adhesiveness with metal surface oxide films and therefore, close adhesiveness is more easily obtained with a copper surface than with precious metals, such as silver, which do not readily form oxide films.

EXAMPLES

(21) Hereinafter, the present invention will be explained in detail by referring to examples. However, the scope of the present invention is not limited to the examples below.

EXAMPLES

(22) After coating, with a bonding material comprising silver and copper as main components, both main surfaces of a silicon nitride substrate having a thickness of 0.32 mm and an external size of 50 mm×50 mm, the substrate was laminated by being sandwiched by oxygen-free copper C1020 plates. This laminated body was heated in a vacuum while also having pressure applied thereto to produce a copper-ceramic bonded body.

(23) A UV-cured type plating resist was applied to portions of the copper plates, which were not to be subjected to silver plating, on the surface and underside of the obtained bonded body. The surface roughness after silver plating was adjusted by carrying out a silver plating pre-treatment on portions where copper was exposed. Then, silver plating having a thickness of 0.1 μm to 1.5 μm was applied by carrying out an electroless silver plating process for a predetermined time. The plating resist was removed using an alkaline aqueous solution to produce a copper-ceramic bonded body with silver partially disposed thereon.

(24) A UV-cured type etching resist was applied to the circuit pattern on the surface side copper plate of the obtained bonded body using screen printing. Further, using screen printing, etching resist was applied to the underside copper plate so as to mask the entirety thereof and ensure that it was not etched. The etching process was carried out using a CuCl.sub.2 solution, with unnecessary portions being removed by dissolving, to form a copper circuit pattern.

(25) The obtained copper circuit substrate was immersed in an alkaline aqueous solution and the etching resist was removed to produce a circuit substrate having a structure in which conductor surfaces had been subjected to silver plating and side surfaces had not been subjected to silver plating.

(26) After bonding, using silver nanoparticles, Si chips on the silver plating of the obtained ceramic circuit substrate, the ceramic circuit substrate was modularized by soldering a copper base plate to the substrate underside surface.

COMPARATIVE EXAMPLES

(27) By shortening the processing time of the electroless silver plating of the examples, circuit substrates having a thin film silver plating were produced, and by lengthening the processing time, circuit substrates having a thick film silver plating were produced.

(28) Circuit substrates in which the plating resist of the examples was not applied and entire copper surfaces were subjected to silver plating were produced.

(29) Circuit substrates in which a silver plating process was carried out after circuit formation and conductor side surfaces were subjected to silver plating were produced.

(30) <Measurement of Silver Plating Thickness>

(31) The thickness of the silver plating was measured, in a range of 50 μm in length, in a plurality of substrates by cross-section SEM observation at a magnification of 5,000 times to 10,000 times, and the average value thereof was defined as the silver plating thickness.

(32) <Measurement of Arithmetic Mean Roughness of Surface Roughness>

(33) The surface roughness was measured, using an SJ-301 device (manufactured by Mitutoyo Corporation) and a standard length of 0.8 mm, at a plurality of locations on the silver plated surface, and the average value thereof was defined as the arithmetic mean roughness of the surface roughness.

(34) <Evaluation of Silver Plating Close Adhesiveness>

(35) For silver plating close adhesiveness, a sharp blade was used to make incisions in the plated surface reaching as far as the base material so as to make a 2 mm square shape; a tape having adhesive strength was stuck thereto; and an investigation into the presence or absence of peeling was carried out by rapidly and strongly tearing away the tape.

(36) <Migration Evaluation>

(37) For migration evaluation, using a substrate including a comb-shaped electrode comprising a distance between patterns of 0.5 mm, 1 kV DC was applied for 500 hr in a constant-temperature constant-humidity chamber under an atmosphere of 85° C. and 93% RH. Next, insulation resistance was measured between patterns, and separated into two ranks as follows.

(38) O: ≥1×10.sup.6Ω; X: <1×10.sup.6Ω

(39) <Evaluation of Close Adhesiveness with EMC Resin>

(40) For an evaluation of close adhesiveness with EMC resin, after sandwiching an EMC resin between two circuit substrates and curing, shear stress was measured using a tensile tester, and separated into two ranks as follows.

(41) O: ≥20 kg/cm.sup.2; X: <20 kg/cm.sup.2

(42) The evaluation results are summarized in Table 1.

(43) TABLE-US-00001 TABLE 1 ARITHMETIC CLOSE SIDE SILVER MEAN ADHESIVENESS SURFACE PLATING ROUGHNESS MIGRATION WITH SILVER THICKNESS Ra PLATING CLOSE EVALUATION EMC RESIN (*) JUDG- No PLATING (μm) (μm) ADHESIVENESS (Ω) (kg/cm.sup.2) MENT EXAMPLES 1 N 0.14 0.19 NO PEELING 4.2 × 10.sup.11 25.2 ∘ 2 N 0.20 0.28 NO PEELING 5.6 × 10.sup.11 26.3 ∘ 3 N 0.28 0.36 NO PEELING 2.2 × 10.sup.11 27.7 ∘ 4 N 0.41 0.46 NO PEELING 7.5 × 10.sup.11 27.2 ∘ 5 N 0.55 0.59 NO PEELING 6.9 × 10.sup.11 26.2 ∘ 6 N 0.63 0.77 NO PEELING 3.1 × 10.sup.11 24.5 ∘ 7 N 0.82 0.98 NO PEELING 8.8 × 10.sup.11 25.5 ∘ 8 N 0.97 1.01 NO PEELING 4.6 × 10.sup.11 23.5 ∘ 9 N 1.25 1.33 NO PEELING 5.1 × 10.sup.11 22.2 ∘ 10 N 1.48 1.45 NO PEELING 3.6 × 10.sup.11 20.2 ∘ 11 N 0.12 0.15 NO PEELING 4.2 × 10.sup.11 25.8 ∘ 12 N 1.01 1.18 NO PEELING 6.2 × 10.sup.11 24.1 ∘ 13 N 1.39 1.42 NO PEELING 5.5 × 10.sup.11 21.1 ∘ COMPARATIVE 14 Y 0.31 0.43 NO PEELING 0.5 × 10.sup.6  15.2 x EXAMPLES 15 Y 0.59 0.69 NO PEELING 0.4 × 10.sup.6  12.1 x 16 N 0.03 0.13 — — — x (PARTIALLY NOT PLATED) 17 N 0.06 0.15 — — — x (PARTIALLY NOT PLATED) 18 N 1.68 1.79 PEELING — — x 19 N 1.77 1.85 PEELING — — x 20 Y 0.55 0.63 NO PEELING 0.6 × 10.sup.6  13.3 x (*) FOR ITEMS HAVING NO SIDE SURFACE SILVER PLATING, CLOSE ADHESIVENESS BETWEEN A SURFACE WHERE COPPER IS EXPOSED AND EMC WAS EVALUATED. FOR ITEMS HAVING SIDE SURFACE SILVER PLATING, CLOSE ADHESIVENESS BETWEEN A SILVER PLATED SURFACE AND EMC WAS EVALUATED. “—” SYMBOL MEANS NOT EVALUATED

(44) As shown in Table 1, by setting a structure in which conductor surfaces are subjected to silver plating and side surfaces are not subjected to silver plating, there were confirmed to be anti-migration properties and high close adhesiveness with a module sealing resin.

REFERENCE SIGNS LIST

(45) 1 Ceramic substrate 2 Copper plate 3 Silver plating