METHODS FOR ANALYZING A GAS MIXTURE AND GAS SENSOR

Abstract

A method for analyzing a gas mixture, in which a layer which is configured for the adsorption and/or absorption of components of the gas mixture is exposed to the gas mixture. The method includes cooling the layer from a first to a second temperature and heating the layer from the second to a third temperature. While the layer has the first, second, and third temperature, at least one electrical resistance value of the layer is measured. A method is described in which a first and second layer are exposed to the gas mixture. The first layer is cooled from a first to a second temperature and the second layer is cooled from a third to a fourth temperature. While the first layer has the first and second temperature and the second layer has the third and fourth temperature, at least one electrical resistance value of the respective layer is measured.

Claims

1-15. (canceled)

16. A method for analyzing a gas mixture, in which a layer, which is configured for the adsorption and/or absorption of components of the gas mixture, is exposed to the gas mixture, the method comprising the following steps: measuring at least one electrical resistance value of the layer, while the layer has a first temperature; reducing a temperature of the layer from the first temperature to a second temperature; measuring at least one electrical resistance value of the layer while the layer has the second temperature; increasing the temperature of the layer from the second temperature to a third temperature; measuring at least one electrical resistance value of the layer, immediately after reaching the third temperature; and analyzing the components of the gas mixture based on the measured electrical resistance values.

17. The method as recited in claim 16, further comprising the following steps: reducing the temperature of the layer from the third temperature to a fourth temperature; and measuring at least one electrical resistance value of the layer while the layer has the fourth temperature; wherein the first temperature differs from the third temperature and/or the second temperature differs from the fourth temperature.

18. The method as recited in claim 17, further comprising the following step: increasing the temperature of the layer from the fourth temperature to the first temperature.

19. The method as recited in claim 18, wherein the method is carried out periodically with a period length in a range from 20 seconds to 120 seconds.

20. A method for analyzing a gas mixture, in which a first layer and a second layer, which are each configured for the adsorption and/or absorption of components of the gas mixture and are thermally decoupled from one another, are exposed to the gas mixture, the method comprising the following steps: measuring at least one electrical resistance value of the first layer, while the first layer has a first temperature; reducing a temperature of the first layer from the first temperature to a second temperature; measuring at least one electrical resistance value of the first layer while the first layer has the second temperature; simultaneously measuring at least one electrical resistance value of the second layer while the second layer has a third temperature; reducing a temperature of the second layer from the third temperature to a fourth temperature; measuring at least one electrical resistance value of the second layer while the second layer has the fourth temperature; and analyzing the components of the gas mixture based on the measured electrical resistance values; wherein the first temperature differs from the third temperature and/or the second temperature differs from the fourth temperature.

21. The method as recited in claim 16, wherein the at least one electrical resistance value of the layer, while the layer has the second temperature or the fourth temperature, is measured after the layer has been held for a time period in the range of 5 seconds to 30 seconds at the respective second or fourth temperature.

22. The method as recited in claim 16, wherein the at least one electrical resistance value of the layer, while the layer has the first temperature or the third temperature, is measured after the layer has been held for a time period of at least 100 ms at the first temperature or the fourth temperature.

23. The method as recited in claim 16, wherein the increase of the temperature of the layer from the second temperature to the third temperature and/or the increase of the temperature of the layer from the fourth temperature to the first temperature takes place within at most one second.

24. The method as recited in claim 16, wherein the first temperature and the third temperature are each independent of one another in a range from 250° C. to 400° C.

25. The method as recited in claim 16, wherein the second temperature and the fourth temperature are each independent of one another in a range from 20° C. to 200° C.

26. The method as recited in claim 16, wherein the first temperature and the third temperature are equal and are in a range from 300° C. to 400° C., the second temperature is in a range from 30° C. to 100° C., and the fourth temperature is in a range from 100° C. to 180° C.

27. The method as recited in claim 16, wherein the gas mixture contains at least two different sulfurous components.

28. A gas sensor, which is configured to analyze a gas mixture, the gas sensor comprising: a layer configured for adsorption and/or absorption of components of the gas mixture; and a computer configured to ascertain a resistance of the layer; wherein the gas sensor, for analyzing the gas mixture, is configured to: measure at least one electrical resistance value of the layer, while the layer has a first temperature, reduce a temperature of the layer from the first temperature to a second temperature, measure at least one electrical resistance value of the layer while the layer has the second temperature, increase the temperature of the layer from the second temperature to a third temperature, measure at least one electrical resistance value of the layer immediately after reaching the third temperature, and analyze the components of the gas mixture based on the measured electrical resistance values.

29. A gas sensor configured to analyze a gas mixture, the gas sensor comprising: a first layer and a second layer, which are respectively configured for adsorption and/or absorption of components of the gas mixture and are thermally decoupled from one another; and a computer for ascertaining a resistance of the first and second layers; wherein the gas sensor, for analyzing the gas mixture, is configured to: measure at least one electrical resistance value of the first layer, while the first layer has a first temperature, reduce a temperature of the first layer from the first temperature to a second temperature, measure at least one electrical resistance value of the first layer while the first layer has the second temperature, simultaneously measure at least one electrical resistance value of the second layer while the second layer has a third temperature, reduce a temperature of the second layer from the third temperature to a fourth temperature, measuring at least one electrical resistance value of the second layer while the second layer has the fourth temperature, and analyzing the components of the gas mixture based on the measured electrical resistance values, wherein the first temperature differs from the third temperature and/or the second temperature differs from the fourth temperature.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Exemplary embodiments of the present invention are shown in the figures and are explained in greater detail in the following description.

[0020] FIG. 1 schematically shows a gas sensor which may be used in the method according to one exemplary embodiment of the present invention.

[0021] FIG. 2 shows in two diagrams the temporal curve of the temperature and the electrical resistance of a metal oxide layer in an exemplary embodiment of the method according to the present invention.

[0022] FIG. 3 shows in two diagrams the temporal curve of the temperature and the electrical resistance of a metal oxide layer in another exemplary embodiment of the method according to the present invention.

[0023] FIG. 4 schematically shows another gas sensor which may be used in an exemplary embodiment of the method according to the present invention.

[0024] FIG. 5 shows in two diagrams the temporal curve of the temperature and the electrical resistance of a metal oxide layer in still another exemplary embodiment of the method according to the present invention.

[0025] FIG. 6 shows in one diagram the temporal curve of the temperature of a metal oxide in still another exemplary embodiment of the method according to the present invention.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

[0026] Gas sensor 10a shown in FIG. 1 includes a sensitive layer 11, which is made up in the present case of tin oxide doped using palladium. A first electrode 12 and a second electrode 13 are situated in sensitive layer 11 in such a way that they may measure its electrical resistance. Sensitive layer 11 and electrodes 12, 13 are situated on one side of a substrate 14, on the opposite side of which a heating coil 15 is situated. This is controlled by a computer 16. Computer 16 additionally reads the voltage applied between electrodes 12, 13 and the current present in a circuit including electrodes 12, 13, so that the electrical resistance of layer 11 may be ascertained. Layer 11 is exposed to a gas mixture which contains components 20. In the exemplary embodiments of the method according to the present invention described hereinafter, these components include hydrogen sulfide and dimethyl disulfide, which are differentiated with the aid of the different specific embodiments of the method.

[0027] In a conventional method for analyzing components 20, as is described in European Patent Application No. EP 2 995 938 A1, layer 11 is initially heated for a predefined time period of, for example, 20 seconds to a first temperature T.sub.1 of, for example, 300° C., in that heating coil 15 is activated.

[0028] Subsequently, temperature T is reduced to a second temperature T.sub.2 of, for example, 100° C. If the gas mixture did not contain sulfurous components, a curve of electrical resistance R with time t according to resistance profile R.sub.o shown in FIG. 2 would be expected. If the gas mixture contained hydrogen sulfide (H.sub.2S) as the only sulfurous component, in contrast, a reduction of resistance R according to resistance profile R(H.sub.2S) would be expected. In contrast, if the gas mixture contained dimethyl disulfide (DMDS) as the only sulfurous component, an increase of resistance R according to resistance profile R(DMDS) would be expected. However, if the gas mixture contains both components, these effects may cancel each other out, so that resistance profile R.sub.0 again results. Gas sensor 10a would thus incorrectly indicate a gas mixture which does not contain sulfurous components.

[0029] In one exemplary embodiment of the method according to the present invention, layer 11 is initially heated for two seconds to a temperature T.sub.1 of 300° C. and then reduced to a temperature T.sub.2 of 50° C. Resistance R of layer 11 is measured immediately before reducing temperature T and 20 seconds after its reduction.

[0030] FIG. 3 shows that resistance R is equal for two different gas mixtures G1, G2 having a different ratio of H.sub.2S and DMDS at first temperature T.sub.1 and differs at second temperature T.sub.2 due to a resistance profile R(G1) of first gas mixture G1 from a resistance profile R(G2) of second gas mixture G2. After temperature T has been at second temperature T.sub.2 for a long time, it is increased to a third temperature T.sub.3 of 325° C. After it has been at this third temperature T.sub.3 for 20 seconds, it is reduced to a temperature T.sub.4 of 100° C. It is apparent that the two resistance profiles R(G1), R(G2) at third temperature T.sub.3 are identical to those of first temperature T.sub.1 R(G1), R(G2), but differ at fourth temperature T.sub.4 from those at second temperature T.sub.2. In that resistance values are also measured here immediately before the reduction of third temperature T.sub.3 to fourth temperature T.sub.4 and also 20 seconds after the reduction of the temperature, a database is created, on the basis of which the proportion of H.sub.2S and DMDS in the gas mixture may be quantified.

[0031] FIG. 4 shows a gas sensor 10b, which may be used in a second exemplary embodiment of the method according to the present invention. It includes a first layer 11a including two electrodes 12a, 13a, a first substrate 14a, and a first heating coil 15a. Furthermore, it includes a second layer 11b including two electrodes 12b, 13b, a second substrate 14b, and a second heating coil 15b. The two substrates 14a, 14b are thermally decoupled from one another. The two heating coils 15a, 15b are activated independently of one another by a shared computer 16, which also receives the signals of all electrodes 12a, 13a, 12b, 13b. In this exemplary embodiment of the method, a single layer does not pass through the entire temperature profile according to FIG. 3. Rather, first layer 11a is only operated at first temperature T.sub.1 and second temperature T.sub.2 and second layer 11b is only operated at third temperature T.sub.3 and at fourth temperature T.sub.4. Both layers 11a, 11b are exposed to the same gas mixture. This enables a significantly faster gas analysis than with the aid of the first exemplary embodiment of the method.

[0032] In a third exemplary embodiment of the method, the gas sensor according to FIG. 1 is operated using the temperature profile shown in FIG. 5. Layer 11 is initially heated to a temperature T.sub.1 of 300° C., then cooled to a second temperature T.sub.2 of 100° C., and finally heated again to a third temperature T.sub.3 of 300° C. The heating from second temperature T.sub.2 to third temperature T.sub.3 takes place suddenly within 100 ms. At first temperature T.sub.1 and second temperature T.sub.2, in this third exemplary embodiment of the method, it shows the same temperature profile for different gas mixtures as in the conventional method according to FIG. 2. H.sub.2S and DMDS would not be detectable in parallel to one another in a gas mixture under certain circumstances solely on the basis of resistance values. However, the temperature jump has the result that at a jumping point S immediately after reaching third temperature T.sub.3, both H.sub.2S and DMDS have a resistance-reducing effect and thus generate a sum signal in the resistance profile. The sum signal does not have to weigh the individual signals in the ratio 1:1, but may also be a weighted sum. Even if the effects of the two sulfurous components on resistance R have eliminated one another at second temperature T.sub.2, their presence may be recognized by a resistance measurement immediately after reaching third temperature T.sub.3 and their portion in the gas mixture may also be quantified from the resistance value measured there together with the resistance value which was measured at second temperature T.sub.2.

[0033] A fourth exemplary embodiment of the method according to the present invention follows a temperature profile which is shown in FIG. 6. Using the gas sensor according to FIG. 1, this temperature profile is periodically carried out at a period length of 80 seconds. It begins with a temperature T.sub.1 of 350° C.

[0034] In a first measurement range 31, resistance values are measured, to which volatile organic components of the gas mixture, for example alcohols or ketones, provide a strong contribution. In contrast, sulfurous components only provide a small contribution. Subsequently, temperature T is reduced to a second temperature T.sub.2 of 70° C. At this temperature, a second measurement range 32 is present, in which predominantly H.sub.2S provides a contribution to the measured resistance. Temperature T is subsequently increased to a third temperature T.sub.3, which corresponds to first temperature T.sub.1. In a third measurement range 33 at third temperature T.sub.3, there is again no significant contribution of the sulfurous components of the gas mixture to the measured resistance values. Temperature T is subsequently reduced to a fourth temperature T.sub.4 of 140° C. At this temperature, in a fourth measurement range 34, both H.sub.2S and DMDS contribute to the measured resistance values, the contributions of these two components having different signs. Temperature T is subsequently increased suddenly within 50 ms back to first temperature T.sub.1. In a fifth measurement range 35 immediately after reaching first temperature T.sub.1 again, H.sub.2S and DMDS contribute to the measured resistance values with the same sign. By periodically repeating the temperature profile according to FIG. 6, the composition of the gas mixture may be continuously monitored.