Method for embedding silicon die into a stacked package
09735136 · 2017-08-15
Assignee
Inventors
Cpc classification
H01L25/18
ELECTRICITY
H01L2224/4824
ELECTRICITY
H01L2225/0651
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2225/06555
ELECTRICITY
H01L23/3128
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2225/06541
ELECTRICITY
International classification
H01L25/18
ELECTRICITY
H01L25/065
ELECTRICITY
Abstract
Several embodiments of microelectronic configurations with logic components and associated methods of manufacturing are disclosed herein. In one embodiment, the configuration includes a substrate with a recess, a first die carried by the substrate wherein the die substantially covers the recess, and a logic component carried by the die in a location exposed by the recess. The logic component can be substantially coplanar with the substrate. The die is electrically connected to a terminal on a one side of the substrate, and the logic component is electrically connected to a terminal on an opposite side of the substrate.
Claims
1. A microelectronic device, comprising: an interposer substrate having a first side and a second side, a recess open at the first side and extending partially, but not completely, through the interposer substrate, the recess having a base and recess sidewalls at least generally transverse to the first side, the interposer substrate further having a plurality of first terminals at the first side, and a plurality of second terminals at the second side; one or more individual dies attached to the second side of the interposer substrate, the one or more individual dies having integrated circuitry and bond sites electrically connected to the second terminals of the interposer substrate; and a logic component having a major surface and logic component sidewalls at least generally transverse to the major surface, the logic component being in the recess at the first side of the interposer substrate and attached to the base of the recess of the interposer substrate, the logic component is electrically connected to the second terminals at the second side, wherein— the base has a first width between the recess sidewalls, the major surface has a second width between the logic component sidewalls, and the first width is generally the same as the second width.
2. The microelectronic device of claim 1 wherein the one or more individual dies form a die structure comprising a plurality of dies attached to the first side of the interposer substrate.
3. The microelectronic device of claim 1 wherein the recess is centrally located on the interposer substrate.
4. The microelectronic device of claim 1 wherein the dies are electrically connected to the second terminals at the second side by wirebonds.
5. The microelectronic device of claim 1 wherein the one or more individual dies comprise a plurality of dies comprising a NAND stack, and the logic component comprises a controller.
6. The microelectronic device of claim 1, further comprising a spacer between at least two of the individual dies.
7. The microelectronic device of claim 1 wherein the first terminal and the second terminal are electrically connected by interlayer wiring.
8. The microelectronic device of claim 1, wherein the logic component is at least flush with the first side of the interposer substrate.
9. The microelectronic device of claim 1, wherein the logic component is flush with the first side of the interposer substrate.
10. The microelectronic device of claim 1 wherein a portion of the logic component projects outside of the recess and beyond the interposer substrate.
11. The microelectronic device of claim 1 wherein: the bond sites are first bond sites; the logic component includes second bond sites; and the microelectronic device further comprises wirebonds connecting the first terminals to the second bond sites, wherein the wirebonds connect to the second bond sites at a location outside of the recess.
12. The microelectronic device of claim 1 wherein: the bond sites are first bond sites; a portion of the logic component projects outside of the recess and beyond the interposer substrate; the portion of the logic component includes second bond sites; and the microelectronic device further comprises wirebonds connecting the first terminals to the second bond sites.
13. A microelectronic device, comprising: an interposer substrate with first bond pads on a first side of the interposer substrate and second bond pads on a second side of the interposer substrate, wherein the interposer substrate has a first thickness and is formed with a recess extending from the first side to an intermediate depth in the interposer substrate, and wherein the recess has a first planform area; a die stack comprising a plurality of dies in a stack, wherein a base die is attached to the second side of the interposer substrate; a logic component having a second planform area that is generally the same as the first planform area, the logic component being attached in the recess, wherein the logic component is positioned between the first side of the interposer substrate and the second side of the interposer substrate; an electrical pathway between the dies and first bond pads on the first side of the interposer substrate; and wirebonds electrically connecting the logic component to the first bond pads on the first side of the interposer substrate.
14. The microelectronic device of claim 13 wherein the electrical pathway between the dies and first bond pads comprises wirebonds.
15. The microelectronic device of claim 13, further comprising spacers between the plurality of dies.
16. The microelectronic device of claim 13 wherein the die stack comprises at least one memory device.
17. The microelectronic device of claim 13, wherein the logic component is at least flush with the first side of the interposer substrate.
18. The microelectronic device of claim 13, wherein the logic component is flush with the first side of the interposer substrate.
19. A microelectronic device, comprising: an interposer substrate having a first side, a second side, a plurality of first terminals at the first side, and a plurality of second terminals at the second side, wherein— the interposer substrate includes a recess open at the first side and extending partially, but not completely, through the interposer substrate, and the recess includes a base and a recess sidewall at least generally transverse to the first side; one or more individual dies attached to the second side of the interposer substrate, the one or more individual dies having integrated circuitry and bond sites electrically connected to the second terminals of the interposer substrate; and a logic component in the recess at the first side of the interposer substrate and attached to the base of the recess of the interposer substrate, wherein— the logic component is electrically connected to the second terminals at the second side, the logic component includes a major surface and a logic component sidewall at least generally transverse to the major surface, the major surface and the base have generally similar dimensions, and the logic component sidewall and the recess sidewall have generally similar dimensions.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
(7) Specific details of several embodiments of the new technology are described below with reference to microelectronic device configurations with logic components and associated methods of manufacturing. Typical microelectronic device packages include microelectronic circuitry or components, thin-film recording heads, data storage elements, micro fluidic devices, and other components manufactured on microelectronic substrates. Micromachines and micromechanical devices are included within this definition because they are manufactured using technology similar to that used in the fabrication of integrated circuits. The term “microfeature substrate” or “die” is used throughout to include semiconductor substrates and other types of substrates upon which and/or in which semiconductor devices, other types of microelectronic devices, micromechanical devices, data storage elements, read/write components, and other features are fabricated. Suitable materials for dies can include semiconductor pieces (e.g., doped silicon wafers or gallium arsenide wafers), non-conductive pieces (e.g., various ceramic substrates), or conductive pieces. Microfeature dies can also include one or more layers (e.g., conductive, semiconductive, and/or dielectric) that are situated upon and/or within one another. These layers can include or form a wide variety of electrical components, mechanical components, and/or systems of such components (e.g., integrated circuits, memory devices, processors, imagers, micromechanical systems, etc.). The term “surface” can encompass planar and nonplanar surfaces of a semiconductor substrate with or without patterned and non-patterned features. A person skilled in the relevant art will also understand that the new technology may have additional embodiments, and that the new technology may be practiced without several of the details of the embodiments described below with references to
(8) In several embodiments of the new technology, the microelectronic device comprises an interposer substrate with first bond pads on a first side of the interposer substrate, wherein the interposer substrate is formed with a recess extending from the first side to the second side. The microelectronic device also includes a die stack comprising a plurality of dies in a stack, wherein a base die is attached to the first side of the interposer substrate such that at least a portion of a surface of the base die is exposed by the recess. A logic component is attached to the surface of the base die exposed through the recess such that the logic component is positioned at least substantially between the first side of the interposer substrate and the second side of the interposer substrate.
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(10) The dies 318 can include a base die 318a attached to the second side 312b of the interposer substrate 302 using an adhesive tape, adhesive paste or another suitable attachment mechanism. Additional dies 318 can be stacked on the base die 318a. The dies 318 can be made of silicon or any other suitable material, and can be a memory device (e.g., DRAM) or other electronic and/or mechanical component (e.g., a NAND stack). Although
(11) The logic component 316 can be located in the recess 324 through the interposer substrate 302. In this embodiment, the logic component 316 is attached to the base die 318a which is adjacent the second side 312b of the interposer substrate 302. This embodiment of the microelectronic device 300 reduces the stack height and latency compared to the device shown in
(12) In several other embodiments of the new technology, the microelectronic device comprises an interposer substrate having a first side and a second side, and a recess open at the second side. The recess can be a through hole passing completely through the interposer substrate, or the recess can be a blind hole extending a distance into the interposer substrate without penetrating the opposing side of the substrate. The microelectronic device also includes a plurality of second terminals at the second side. One or more individual dies are attached to the first side of the interposer substrate, and the dies include integrated circuitry and bond sites electrically connected to the first terminals of the interposer substrate. A logic component can be positioned in the recess of the interposer substrate, located between the first side and second side of the interposer substrate, and electrically connected to the second terminals at the second side.
(13) Several embodiments of methods for assembling a microelectronic device package comprises forming an interposer substrate with a recess, and attaching a die structure to a one side of the interposer substrate. The recess can be a blind hole or a through hole. The method continues by attaching a logic component to the microelectronic device package such that at least a portion of the logic component is positioned between the one side of the interposer substrate and an opposite side of the interposer substrate, and such that at least a portion of the logic component is accessible through the recess on the opposite side. The method also includes electrically connecting the die structure and the logic component to bond pads on the interposer substrate.
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(15) The logic component 414 is attached to the base die 412a. The logic component 414 is positioned in the recess 324 and electrically connected to the second bond pads 306 by wirebonds 328. This configuration enables a shorter overall package compared to conventional designs because the logic component 414 is located in the recess 324 instead of on top of the die stack 410. In addition, the short wirebonds 328 to the logic component 414 have a low latency. Thus, the device 400 according to this embodiment achieves good performance from a small device.
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(17) The microelectronic device 500 further includes a logic component 520 positioned in the blind hole 504 and attached to the interposer substrate 502. The dimensions of the blind hole 504 can vary both in depth and width to accommodate logic components of varying sizes. For example, the blind hole 504 can be sized according to the size of the logic component 520 such that the logic component 520 is substantially flush with the first side 506a of the substrate 502, but in other examples a portion of the logic component can extend below the first side 506a of the substrate 502 by a distance that is less than the distance a solder ball 508 or other connector projects away from a ball pad 509. The logic component 520 is electrically connected to bond pads 507a by wirebonds 522.
(18) The microelectronic device can also include one or more dies 530 stacked on the second side 506b of the substrate and connected to bond pads 507b by wire bonds 532. As described above, the dies 530 can include any number, type, and configuration of dies depending on the application of the device 500. This configuration provides a short, compact microelectronic device design because the logic component 520 is positioned, at least in part, between the first side 506a and the second side 506b of the interposer substrate 502. Also, the length of the wirebonds is reduced, which correspondingly reduces the latency of the device 500.
(19) Individual microelectronic device packages may be incorporated into myriad larger and/or more complex systems. A representative system 600 is shown schematically in
(20) From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but well-known structures and functions have not been shown or described in detail to avoid unnecessarily obscuring the description of the embodiments of the invention. Where the context permits, singular or plural terms may also include the plural or singular term, respectively. Unless the word “or” is associated with an express clause indicating that the word should be limited to mean only a single item exclusive from the other items in reference to a list of two or more items, then the use of “or” in such a list shall be interpreted as including (a) any single item in the list, (b) all of the items in the list, or (c) any combination of the items in the list.
(21) From the foregoing, it will be appreciated that specific embodiments described above are for purposes of illustration and that various modifications may be made without deviating from the invention. Aspects of the disclosure described in the context of particular embodiments may be combined or eliminated in other embodiments. Further, while advantages associated with certain embodiments of the disclosure may have been described in the context of those embodiments, other embodiments may also exhibit such advantages, but not all embodiments need necessarily exhibit such advantages to fall within the scope of the disclosure. Accordingly, the present invention is not limited to the embodiments described above, which were provided for ease of understanding, but rather the invention includes any and all other embodiments defined by the claims.