Electronic module and fabrication method thereof

Abstract

An electronic module is provided, including an electronic element and a strengthening layer formed on a side surface of the electronic element but not formed on an active surface of the electronic element so as to strengthen the structure of the electronic module. Therefore, the electronic element is prevented from being damaged when the electronic module is picked and placed.

Claims

1. An electronic module, comprising: an electronic element having an active surface with a plurality of electrode pads, an inactive surface opposite to the active surface, and a side surface connecting the active and inactive surfaces; a passivation layer formed on the active surface with the electrode pads exposed from the passivation layer; a strengthening layer formed on the side surface of the electronic element and being free from being formed on the passivation layer on the active surface of the electronic element; and an RDL structure formed on and in direct contact with the strengthening layer and the passivation layer on the active surface of the electronic element and electrically connected to the electrode pads of the electronic element.

2. The module of claim 1, wherein the electronic element is bonded to a packaging substrate via the active surface thereof.

3. The module of claim 1, wherein the strengthening layer is further formed on the inactive surface of the electronic element.

4. The module of claim 1, wherein the strengthening layer is formed around the side surface of the electronic element.

5. The module of claim 1, wherein the strengthening layer is made of an insulating material.

6. The module of claim 1, further comprising a separation portion formed on the strengthening layer on the side surface of the electronic element in a manner that the strengthening layer is sandwiched between the side surface of the electronic element and the separation portion.

7. The module of claim 6, wherein the separation portion has a width less than 1 mm.

8. The module of claim 6, wherein the RDL structure is further formed on the separation portion.

9. The module of claim 1, further comprising a plurality of conductive elements formed on the RDL structure and electrically connected to the electrode pads of the electronic element.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a schematic exploded cross-sectional view of a conventional flip-chip package;

(2) FIGS. 2A to 2G are schematic cross-sectional views showing a method for fabricating an electronic module according to the present invention, wherein FIGS. 2C′ and 2G′ show another embodiment of FIGS. 2C and 2G; and

(3) FIGS. 3A and 3B are schematic cross-sectional views showing different embodiments of the electronic module of the present invention, wherein FIGS. 3A′ and 3B′ are schematic upper views of FIGS. 3A and 3B, respectively.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

(4) The following illustrative embodiments are provided to illustrate the disclosure of the present invention, these and other advantages and effects can be apparent to those in the art after reading this specification.

(5) It should be noted that all the drawings are not intended to limit the present invention. Various modifications and variations can be made without departing from the spirit of the present invention. Further, terms such as “first”, “second”, “on”, “a” etc. are merely for illustrative purposes and should not be construed to limit the scope of the present invention.

(6) FIGS. 2A to 2G are schematic cross-sectional views showing a method for fabricating an electronic module 2 according to the present invention.

(7) Referring to FIG. 2A, a full-panel substrate 20 is provided, which has a plurality of electronic elements 20′ and a plurality of separation portions 21 formed between the electronic elements 20′.

(8) In the present embodiment, each of the electronic elements 20′ has an active surface 20a with a plurality of electrode pads 200 and an inactive surface 20b opposite to the active surface 20a. Further, a passivation layer 201 is formed on the active surfaces 20a of the electronic elements 20′, and the electrode pads 200 of the electronic elements 20′ are exposed from the passivation layer 201.

(9) Each of the electronic elements 20′ can be an active element such as a semiconductor chip, a passive element such as a resistor, a capacitor or an inductor, or a combination thereof. In the present embodiment, the substrate 20 is a silicon wafer, and the electronic elements 20′ are active elements.

(10) Referring to FIG. 2B, a carrier 23 is disposed on the passivation layer 201. In the present embodiment, a release layer 231 is formed between the carrier 23 and the passivation layer 201 so as to facilitate subsequent removal of the carrier 23 from the passivation layer 201.

(11) Referring to FIG. 2C, an opening 24 is formed in each of the separation portions 21 by cutting. As such, each of the electronic elements 20′ has a side surface 20c connecting the active and inactive surfaces 20a, 20b of the electronic element 20′.

(12) In the present embodiment, each of the separation portions 21 is completely removed to form the opening 24. The width L of the opening 24, i.e., the width of the separation portion 21, is in a range of 10 um to 3 mm. Further, the inactive surfaces 20b of the electronic elements 20′ can be optionally thinned by grinding.

(13) In another embodiment, referring to FIG. 2C′, during the cutting process, a plurality of openings 24′ are formed in each of the separation portions 21. That is, each of the separation portions 21 is partially removed, leaving a remaining portion 21′. The width L′ of the separation portion 21 is in a range of 15 um to 4 mm.

(14) Referring to FIG. 2D, a strengthening layer 25 is formed in the openings 24 and on the electronic elements 20′ so as to cover the side surfaces 20c and the inactive surfaces 20b of the electronic elements 20′.

(15) In the present embodiment, the strengthening layer 25 is completely filled in the openings 24 and formed around the side surfaces 20c of the electronic elements 20′. The strengthening layer 25 is made of an insulating material, for example, a molding compound material, a dry film material, a photoresist material or a solder mask material.

(16) Referring to FIG. 2E, the carrier 23 and the release layer 231 are removed to expose the electrode pads 200 of the electronic elements 20′, the passivation layer 201 and the strengthening layer 25.

(17) Referring to FIG. 2F, an RDL (Redistribution Layer) process is performed to form an RDL structure 27 on the passivation layer 201. The RDL structure 27 is electrically connected to the electrode pads 200 of the electronic elements 20′. Then, a plurality of conductive elements 28 are formed on the RDL structure 27.

(18) In the present embodiment, the RDL structure 27 has a circuit layer 271 formed on the passivation layer 201 and electrically connected to the electrode pads 200 of the electronic elements 20′, and an insulating layer 273 formed on the circuit layer 271. Further, portions of the circuit layer 271 are exposed from the insulating layer 273 for mounting the conductive elements 28.

(19) The conductive elements 28 are solder balls, metal bumps or a combination thereof.

(20) Referring to FIG. 20, a singulation process is performed. That is, the full-panel substrate 20 is cut along a cutting path 26 (i.e., along the separation portions 21) so as to separate the electronic elements 20′ from one another, thus forming a plurality of electronic modules 2.

(21) In the present embodiment, the width S of the cutting path 26 is less than the width L of the openings 24.

(22) In another embodiment, continued from FIG. 2C′, the cutting path 26 is positioned between the openings 24′, as shown in FIG. 2G′. As such, a plurality of electronic modules 2′ are obtained. Each of the electronic modules 2′ has a separation portion 21′ embedded in the strengthening layer 25 on the side surface of the electronic element 20′. That is, the openings 24′ are positioned between the separation portion 21′ and the electronic element 20′, and the surface of the separation portion 21′ is flush with the side surface of the strengthening layer 25. The RDL structure 27 is formed on the strengthening layer 25, the separation portion 21′ and the active surface 20a of the electronic element 20′ and electrically connected to the electrode pads 200 of the electronic element 20′.

(23) Further, the strengthening layer 25 can be partially removed so as to expose the inactive surface 20b of the electronic element 20′. For example, the inactive surface 20b of the electronic element 20′ is flush with the upper surface of the strengthening layer 25, as shown in FIG. 3B.

(24) Therefore, by forming the strengthening layer 25 to encapsulate the electronic element 20′, the present invention strengthens the structure of the electronic module 2, 2′ so as to prevent damage of the electronic element 20′ when the electronic module 2, 2′ is subjected to an SMT (Surface Mount Technology) process or transported, thus improving the product yield.

(25) Referring to FIGS. 3A and 3B, the present invention further provides an electronic module 2, 2′, which has: an electronic element 20′ having an active surface 20a with a plurality of electrode pads 200, an inactive surface 20b opposite to the active surface 20a, and a side surface 20c connecting the active and inactive surfaces 20a, 20b; and a strengthening layer 25 formed on the side surface 20c of the electronic element 20′ but not formed on the active surface 20a of the electronic element 20′.

(26) The strengthening layer 25 can be made of an insulating material.

(27) The electronic module 2, 2′ can further have an RDL structure 27 formed on the strengthening layer 25 and the active surface 20a of the electronic element 20′ and electrically connected to the electrode pads 200 of the electronic element 20′.

(28) The electronic module 2, 2′ can further have a plurality of conductive elements 28 formed on the active surface 20a of the electronic element 20′ (or the RDL structure 27) and electrically connected to the electrode pads 200 of the electronic element 20′.

(29) In an embodiment, referring to FIGS. 3A′ and 3B′, the strengthening layer 25 are formed around the side surface 20c of the electronic element 20′.

(30) In an embodiment, the strengthening layer 25 is further formed on the inactive surface 20b of the electronic element 20′, as shown in FIG. 3A. Alternatively, the inactive surface 20b of the electronic element 20′ is exposed from the strengthening layer 25, as shown in FIG. 3B.

(31) In an embodiment, the electronic module 2′ further has a separation portion 21′ formed on the strengthening layer 25 on the side surface 20c of the electronic element 20′ in a manner that the strengthening layer 25 is sandwiched between the side surface 20c of the electronic element 20′ and the separation portion 21′. Further, the RDL structure 27 is formed on the separation portion 21′. The width t of the separation portion 21′ is less than 1 mm.

(32) In an embodiment, the electronic element 20′ is flip-chip disposed on a packaging substrate 8 via the active surface 20a thereof, with the conductive elements 28 bonded to the conductive pads 80 of the packaging substrate 8.

(33) Therefore, the present invention strengthens the structure of the electronic module through the strengthening layer so as to prevent damage of the electronic element and improve the product yield.

(34) The above-described descriptions of the detailed embodiments are only to illustrate the preferred implementation according to the present invention, and it is not to limit the scope of the present invention. Accordingly, all modifications and variations completed by those with ordinary skill in the art should fall within the scope of present invention defined by the appended claims.