Disclosed are an electronic device and a manufacturing method of an electronic device. The manufacturing method includes the following. A first substrate is provided. The first substrate includes a plurality of chips. A second substrate is provided. A transfer process is performed to sequentially transfer a first chip and a second chip among the chips to the second substrate. The second chip is adjacent to the first chip. A first angle is between a first extension direction of a first side of the first chip and an extension direction of a first boundary of the second substrate. A second angle is between a second extension direction of a second side of the second chip and the extension direction of the first boundary of the second substrate. The first angle is different from the second angle.

A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.

A package structure includes first/second/third package components, a thermal interface material (TIM) structure overlying the first package component opposite to the second package component, and a heat dissipating component disposed on the third package component and thermally coupled to the first package component through the TIM structure. The first package component includes semiconductor dies and an insulating encapsulation encapsulating the semiconductor dies, the second package component is interposed between the first and third package components, and the semiconductor dies are electrically coupled to the third package component via the second package component. The TIM structure includes a dielectric dam and thermally conductive members including a conductive material, disposed within areas confined by the dielectric dam, and overlying the semiconductor dies. A manufacturing method of a package structure is also provided.

Tamper-respondent assemblies are provided which include an enclosure mounted to a circuit board and enclosing one or more components to be protected within a secure volume. A tamper-respondent sensor covers, at least in part, an inner surface of the enclosure, and includes at least one tamper-detect circuit. A monitor circuit is disposed within the secure volume to monitor the tamper-detect circuit(s) for a tamper event. A pressure connector assembly is also disposed within the secure volume, between the tamper-respondent sensor and the circuit board. The pressure connector assembly includes a conductive pressure connector electrically connecting, at least in part, the monitor circuit and the tamper-detect circuit(s) of the tamper-respondent assembly, and a spring-biasing mechanism to facilitate breaking electrical connection of the conductive pressure connector to the tamper-detect circuit(s) with a tamper event.

Provided is a power semiconductor module that can secure insulating properties. A semiconductor element is mounted on a resin-insulated base plate including a circuit pattern, a resin insulating layer, and a base plate. A case enclosing the resin-insulated base plate is bonded to the resin insulating layer with an adhesive. The resin insulating layer and the case are bonded together with a region enclosed by the resin insulating layer and a tapered portion of the case formed closer to the resin insulating layer being filled with the adhesive made of a material identical to that of the sealing resin. Air bubbles in the adhesive appear in the tapered portion opposite to the resin insulating layer.

A pressure sensor element and a receiving circuit are formed on an IC chip. A transmitting circuit and a piezoelectric element of an actuator are respectively formed on a transmitting chip and a piezoelectric chip. The piezoelectric chip and the pressure sensor face each other separated by a distance in an airtight first space surrounded by a package main body and a base substrate. Dielectric breakdown voltage of signal transmission from the primary side to the secondary side is set by the distance. The first space is a pressure propagation region including an insulating medium capable of transmitting vibrations of the piezoelectric element as pressure. The signal transmission is performed with high insulation by the pressure generated in the pressure propagation region between components integrated in a single module by insulating the primary side and the secondary side from each other by the insulating medium of the pressure propagation region.

A pressure sensor element and a receiving circuit are formed on an IC chip. A transmitting circuit and a piezoelectric element of an actuator are respectively formed on a transmitting chip and a piezoelectric chip. The piezoelectric chip and the pressure sensor face each other separated by a distance in an airtight first space surrounded by a package main body and a base substrate. Dielectric breakdown voltage of signal transmission from the primary side to the secondary side is set by the distance. The first space is a pressure propagation region including an insulating medium capable of transmitting vibrations of the piezoelectric element as pressure. The signal transmission is performed with high insulation by the pressure generated in the pressure propagation region between components integrated in a single module by insulating the primary side and the secondary side from each other by the insulating medium of the pressure propagation region.

An integrated circuit package that includes a liquid phase thermal interface material (TIM) is described. The package may include any number of die. The liquid phase TIM can be sealed in a chamber between a die and an integrated heat spreader and bounded on the sides by a perimeter layer. The liquid phase TIM can be fixed in place or circulated, depending on application. A thermal conductivity of the liquid phase TIM can be at least 15 Watts/meter-Kelvin, according to some embodiments. A liquid phase TIM eliminates failure mechanisms present in solid phase TIMs, such as cracking due to warpage and uncontained flow out of the module.

A wiring base includes a base having a first surface, at least one metal layer positioned on the first surface, at least one lead terminal positioned on the metal layer, and a joining member that is positioned on the metal layer and joins the lead terminal to the metal layer. The lead terminal has a first portion to be in contact with the joining member and also has a second portion being continuous with the first portion. In a cross section of the lead terminal orthogonal to a longitudinal direction of the lead terminal, the first portion has two concave surfaces that are formed near the metal layer so as to be disposed opposite to each other across a center in a transverse direction of the lead terminal.