BONDED BODY, POWER MODULE SUBSTRATE WITH HEAT SINK, HEAT SINK, METHOD OF MANUFACTURING BONDED BODY, METHOD OF MANUFACTURING POWER MODULE SUBSTRATE WITH HEAT SINK, AND METHOD OF MANUFACTURING HEAT SINK

Abstract

The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

Claims

1. A bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other, wherein the aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum, and a Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

2. A power module substrate with heat sink, comprising: an insulating layer; a circuit layer that is formed on one surface of the insulating layer; a metal layer that is formed on the other surface of the insulating layer; and a heat sink that is bonded to the metal layer, wherein in the metal layer, a bonding surface with the heat sink is constituted by copper, nickel, or silver, the heat sink is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the bonding surface of the metal layer and aluminum, and a Ti layer is formed at a bonding portion between the metal layer and the heat sink, and the metal layer and the Ti layer, and the Ti layer and the heat sink are respectively subjected to solid-phase diffusion bonding.

3. A heat sink, comprising: a heat sink main body; and a metal member layer that is bonded to the heat sink main body, wherein the metal member layer is constituted by copper, nickel, or silver, the heat sink main body is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member layer and aluminum, and a Ti layer is formed at a bonding portion between the heat sink main body and the metal member layer, and the heat sink main body and the Ti layer, and the Ti layer and the metal member layer are respectively subjected to solid-phase diffusion bonding.

4. A method of manufacturing the bonded body according to claim 1, the method comprising: a Ti/metal member bonding step of subjecting a Ti material that becomes the Ti layer and the metal member to solid-phase diffusion bonding; and an aluminum member/Ti bonding step of subjecting the metal member to which the Ti material is bonded, and the aluminum member to solid-phase diffusion bonding.

5. A method of manufacturing the power module substrate with heat sink according to claim 2, the method comprising: a Ti/metal layer bonding step of subjecting a Ti material that becomes the Ti layer and the metal layer to solid-phase diffusion bonding; and a heat sink/Ti bonding step of subjecting the metal layer to which the Ti material is bonded, and the heat sink to solid-phase diffusion bonding.

6. A method of manufacturing the heat sink according to claim 3, the method comprising: a Ti/metal member layer bonding step of subjecting a Ti material that becomes the Ti layer and the metal member layer to solid-phase diffusion bonding; and a heat sink main body/Ti bonding step of subjecting the metal member layer to which the Ti material is bonded, and the heat sink main body to solid-phase diffusion bonding.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0042] FIG. 1 is a view schematically showing a power module including a power module substrate with heat sink according to a first embodiment of the invention.

[0043] FIG. 2 is an enlarged view showing a bonding interface between a Cu layer of a metal layer and a second Ti layer in FIG. 1.

[0044] FIG. 3 is an enlarged view showing a bonding interface between a heat sink and the second Ti layer in FIG. 1.

[0045] FIG. 4 is a flowchart showing a method of manufacturing the power module substrate with heat sink according to the first embodiment.

[0046] FIG. 5 is a view schematically showing a method of manufacturing a power module substrate according to the first embodiment.

[0047] FIG. 6 is a view schematically showing a heat sink according to a second embodiment of the invention.

[0048] FIG. 7 is an enlarged view showing a bonding interface between a metal member layer and a Ti layer in FIG. 6.

[0049] FIG. 8 is a flowchart showing a method of manufacturing the heat sink according to the second embodiment.

[0050] FIG. 9 is a view schematically showing a method of manufacturing the heat sink according to the second embodiment.

[0051] FIG. 10 is a view schematically showing a power module including a power module substrate with heat sink according another embodiment of the invention.

BEST MODE FOR CARRYING OUT THE INVENTION

First Embodiment

[0052] Hereinafter, description will be given of embodiments of the invention with reference to the accompanying drawings.

[0053] FIG. 1 shows a power module 1 using a power module substrate with heat sink 30 according to a first embodiment of the invention.

[0054] The power module 1 includes a power module substrate with heat sink 30, and a semiconductor element 3 that is bonded to one surface (an upper surface in FIG. 1) of the power module substrate with heat sink 30 through a solder layer 2.

[0055] The power module substrate with heat sink 30 includes a power module substrate 10, and a heat sink 31 that is bonded to the power module substrate 10.

[0056] The power module substrate 10 includes a ceramic substrate 11 that constitutes an insulating layer, a circuit layer 12 that is arranged on one surface (an upper surface in FIG. 1) of the ceramic substrate 11, and a metal layer 13 that is arranged on the other surface of the ceramic substrate 11.

[0057] The ceramic substrate 11 is configured to prevent electrical connection between the circuit layer 12 and the metal layer 13. For example, the ceramic substrate 11 is constituted by ceramics such as aluminum nitride (AlN), silicon nitride (Si.sub.3N.sub.4), and alumina (Al.sub.2O.sub.3) with high insulating properties, and is constituted by aluminum nitride (AlN) with high insulating properties in this embodiment. In addition, the thickness of the ceramic substrate 11 is set to be in a range of 0.2 mm to 1.5 mm, and is set to 0.635 mm in this embodiment.

[0058] As shown in FIG. 5, the circuit layer 12 is formed by bonding an aluminum plate 22, which is constituted by aluminum or an aluminum alloy, onto one surface of the ceramic substrate 11. In this embodiment, the circuit layer 12 is formed by bonding a rolled plate (aluminum plate 22) of aluminum (2N aluminum) having the purity of 99 mass % or greater to the ceramic substrate 11. The thickness of the aluminum plate 22, which becomes the circuit layer 12, is set to be in a range of 0.1 mm to 1.0 mm, and is set to 0.6 mm in this embodiment.

[0059] As shown in FIG. 1, the metal layer 13 includes an Al layer 13A that is arranged on the other surface of the ceramic substrate 11, and a Cu layer 13B that is laminated on a surface, which is opposite to a surface to which the ceramic substrate 11 is bonded, of the Al layer 13A through a first Ti layer 15.

[0060] As shown in FIG. 5, the Al layer 13A is formed by bonding an aluminum plate 23A, which is constituted by aluminum or an aluminum alloy, onto the other surface of the ceramic substrate 11. The thickness of the aluminum plate 23A, which is bonded, is set to be in a range of 0.1 mm to 1.0 mm, and is set to 0.6 mm in this embodiment.

[0061] The Cu layer 13B is formed by bonding a copper plate 23B, which is constituted by copper or a copper alloy, onto the other surface of the Al layer 13A, through the first Ti layer 15. The thickness of the copper plate 23B is preferably set to be in a range of 0.05 mm to 1 mm, but there is no limitation thereto. In this embodiment, the copper plate 23B, which is bonded, is constituted by oxygen-free copper, and the thickness thereof is set to 0.5 mm.

[0062] The heat sink 31 is configured to radiate heat on a power module substrate 10 side. In this embodiment, as shown in FIG. 1, the heat sink 31 is provided with a flow passage 32 through which a cooling medium flows.

[0063] The heat sink 31 is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature (548° C.) of Cu that constitutes a bonding surface (Cu layer 13B) of the metal layer 13 and Al. Specifically, the heat sink 31 is constituted by ADC12 (solidus temperature is 515° C.) that is a die-casting aluminum alloy defined in JIS H 2118:2006. ADC12 is an aluminum alloy that contains Cu in a range of 1.5 to 3.5 mass %, and Si in a range of 9.6 to 12.0 mass %. It is preferable that the solidus temperature of the aluminum alloy that constitutes the heat sink 31 is set to be equal to or greater than 515° C. and less than 548° C. However, there is no limitation to the range.

[0064] In addition, a second Ti layer 35 is formed at a bonding portion between the heat sink 31 and the metal layer 13 (Cu layer 13B), and the metal layer 13 (Cu layer 13B) and the second Ti layer 35, and the second Ti layer 35 and the heat sink 31 are subjected to solid-phase diffusion bonding, respectively.

[0065] As shown in FIG. 2, a Cu—Ti layer 36 is formed at a bonding interface between the metal layer 13 (Cu layer 13B) and the second Ti layer 35. In this embodiment, the thickness t1 of the Cu—Ti layer 36 is set to be in a range of 1 μm≦t1≦8 μm. The thickness t1 of the Cu—Ti layer 36 is preferably set to be in a range of 2 μm≦t1≦6.5 μm, but there is no limitation to the range.

[0066] In addition, in this embodiment, as shown in FIG. 3, an Al—Ti—Si layer 37 in which Si is solid-soluted in Al.sub.3Ti is formed at a bonding interface between the heat sink 31 and the second Ti layer 35. The Al—Ti—Si layer 37 includes a first Al—Ti—Si layer 37A that is formed on a second Ti layer 35 side, and a second Al—Ti—Si layer 37B that is formed on a heat sink 31 side.

[0067] The first Al—Ti—Si layer 37A and the second Al—Ti—Si layer 37B are constituted by an Al—Ti—Si phase in which Si is solid-soluted in Al.sub.3Ti, and a Si concentration of the second Al—Ti—Si layer 37B is set to be lower than a Si concentration of the first Al—Ti—Si layer 37A. The Si concentration of the first Al—Ti—Si layer 37A is set to 10 at % to 30 at %, and the Si concentration of the second Al—Ti—Si layer 37B is set to be equal to or greater than 0.6 at % and less than 10 at %. It is preferable that the Si concentration of the first Al—Ti—Si layer 37A is set to 15 at % to 25 at %, and the Si concentration of the second Al—Ti—Si layer 37B is set to 2 at % to 5 at %. However, there is no limitation to the ranges.

[0068] Next, description will be given of a method of manufacturing the power module substrate with heat sink 30 according to this embodiment with reference to FIG. 4 and FIG. 5.

[0069] (Aluminum Plate Laminating Step S01)

[0070] First, as shown in FIG. 5, the aluminum plate 22, which becomes the circuit layer 12, is laminated on one surface of the ceramic substrate 11 through Al—Si-based brazing material foil 26.

[0071] In addition, the aluminum plate 23A, which becomes the Al layer 13A, is laminated on the other surface of the ceramic substrate 11 through the Al—Si-based brazing material foil 26. Furthermore, in this embodiment, as the Al—Si-based brazing material foil 26, Al-8 mass % Si alloy foil having a thickness of 10 μm is used.

[0072] (Circuit Layer and Al Layer Forming Step S02)

[0073] The resultant laminated body is put in a vacuum heating furnace and is heated therein in a pressurized state (pressure is set to 1 to 35 kgf/cm.sup.2 (0.10 to 3.43 MPa)) in a laminating direction to bond the aluminum plate 22 and the ceramic substrate 11, thereby forming the circuit layer 12. In addition, the ceramic substrate 11 and the aluminum plate 23A are bonded to form the Al layer 13A.

[0074] Here, it is preferable that a pressure inside the vacuum heating furnace is set to be in a range of 10.sup.−6 Pa to 10.sup.−3 Pa, a heating temperature is set to 600° C. to 643° C., and retention time is set to be in a range of 30 minutes to 180 minutes.

[0075] (Cu layer (Metal Layer) Forming Step S03, and Ti/Metal Layer Bonding Step S04)

[0076] Next, the copper plate 23B, which becomes the Cu layer 13B, is laminated on the other surface side of the Al layer 13A through first titanium foil 25. In addition, in this embodiment, second titanium foil 45 is laminated on the other surface side of the copper plate 23B. Here, the purity of the first titanium foil 25 and the second titanium foil 45 is set to 99 mass % or greater. In addition, the thickness of the first titanium foil 25 and the second titanium foil 45 is set to 3 μm to 40 μm, and is set to 10 μm in this embodiment.

[0077] The resultant laminated body is put in the vacuum heating furnace and is heated therein in a pressurized state (pressure is set to 1 to 35 kgf/cm.sup.2 (0.10 to 3.43 MPa)) in the laminating direction to subject the Al layer 13A and the first titanium foil 25, and the first titanium foil 25 and the copper plate 23B to the solid-phase diffusion bonding, thereby forming the metal layer 13. In addition, the copper plate 23B (Cu layer 13B) and the second titanium foil 45 are subjected to the solid-phase diffusion bonding to form the second Ti layer 35.

[0078] Here, it is preferable that a pressure inside the vacuum heating furnace is set to be in a range of 10.sup.−6 Pa to 10.sup.−3 Pa, a heating temperature is set to be 600° C. to 643° C., and retention time is set to be in a range of 30 minutes to 180 minutes. It is more preferable that the heating temperature is set to 630° C. to 643° C., and the retention time is set to be in a range of 45 minutes to 120 minutes, but there is no limitation to the ranges.

[0079] In respective bonding surfaces, which are subjected to the solid-phase diffusion bonding, of the Al layer 13A, the first titanium foil 25, the copper plate 23B, and the second titanium foil 45, scratches on the bonding surfaces are removed in advance, and thus the bonding surfaces are made to be smooth.

[0080] (Heat Sink/Ti Bonding Step S05)

[0081] Subsequently, the second Ti layer 35 and the heat sink 31 are laminated, and the resultant laminated body is put in a vacuum heating furnace and is heated therein in a pressurized state (pressure is set to 1 to 35 kgf/cm.sup.2 (0.10 to 3.43 MPa)) in a laminating direction to subject the second Ti layer 35 and the heat sink 31 to the solid-phase diffusion bonding. In respective bonding surfaces, which are subjected to the solid-phase diffusion bonding, of the second Ti layer 35 and the heat sink 31, scratches on the bonding surfaces are removed in advance, and thus the bonding surfaces are made to be smooth.

[0082] Here, it is preferable that a pressure inside the vacuum heating furnace is set to be in a range of 10.sup.−6 Pa to 10.sup.−3 Pa, a heating temperature is set to 400° C. to 520° C., and retention time is set to be in a range of 3 hours to 24 hours. Furthermore, it is more preferable that the heating temperature is set to 480° C. to 520° C., and the retention time is set to be in a range of 18 hours to 24 hours, but there is no limitation to the ranges.

[0083] In this manner, the power module substrate with heat sink 30 of this embodiment is manufactured.

[0084] (Die-Bonding Step S06)

[0085] Subsequently, the semiconductor element 3 is laminated on one surface (front surface) of the circuit layer 12 through a solder material that becomes the solder layer 2, and the resultant laminated body is subjected to soldering in a reducing furnace.

[0086] In this manner, the power module 1 of this embodiment is manufactured.

[0087] According to the power module substrate with heat sink 30 configured as described above according to this embodiment, the metal layer 13 includes the Al layer 13A and the Cu layer 13B, the Cu layer 13B is set as a bonding surface with the heat sink 31, the second Ti layer 35 is formed at a bonding portion between the metal layer 13 (Cu layer 13B) and the heat sink 31, the metal layer 13 (Cu layer 13B) and the second Ti layer 35, the second Ti layer 35 and the heat sink 31 are respectively subjected to the solid-phase diffusion bonding. Accordingly, it is possible to suppress mutual diffusion of Al in the heat sink 31 and Cu in the Cu layer 13B due to the second Ti layer 35, and it is possible to suppress formation of a hard and brittle intermetallic compound layer in a large thickness at the bonding portion. As a result, when a heat cycle is applied, it is possible to suppress occurrence of a crack at the bonding portion, and thus it is possible to improve bonding reliability between the heat sink 31 and the power module substrate 10.

[0088] In this embodiment, the heat sink 31 is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature (548° C.) of Cu that constitutes a bonding surface (Cu layer 13B) of the metal layer 13 and Al. Specifically, the heat sink 31 is constituted by ADC12 (solidus temperature is 515° C.) that is a die-casting aluminum alloy defined in JIS H 2118:2006. According to this, it is possible to construct the heat sink 31 with a complicated structure provided with the flow passage 32, and thus it is possible to improve heat radiation performance.

[0089] In this embodiment, after subjecting the metal layer 13 (Cu layer 13B), and the second titanium foil 45 that becomes the second Ti layer 35 to the solid-phase diffusion bonding, the heat sink 31 and the second Ti layer 35 are subjected to the solid-phase diffusion bonding. Accordingly, it is possible to set a solid-phase diffusion temperature between the metal layer 13 (Cu layer 13B) and the second Ti layer 35 to equal to greater than the solidus temperature (515° C.) of the aluminum alloy that constitutes the heat sink 31, and thus it is possible to reliably subject the metal layer 13 (Cu layer 13B) and the second Ti layer 35 to the solid-phase diffusion bonding. In this embodiment, the Cu—Ti layer 36 of which the thickness t1 is set to be in a range of 1 μm≦t1≦8 μm is formed at the bonding interface between the metal layer 13 (Cu layer 13B) and the second Ti layer 35, and thus the metal layer 13 (Cu layer 13B) and the second Ti layer 35 are reliably bonded to each other.

[0090] The heat sink 31 and the second Ti layer 35 can be subjected to the solid-phase diffusion bonding under a low-temperature condition, and thus it is possible to suppress melting of the heat sink 31. According to this, it is possible to set the solid-phase diffusion temperature between the heat sink 31 and the second Ti layer 35 to less than the solidus temperature (515° C.) of the aluminum alloy that constitutes the heat sink 31, but there is no limitation to the ranges. In addition, this embodiment has a configuration in which the Cu layer (metal layer) forming step S03 and the Ti/metal layer bonding step S04 are simultaneously performed, and thus it is possible to simplify the manufacturing step, and thus it is possible to reduce the manufacturing cost.

[0091] In this embodiment, the Al—Ti—Si layer 37 is formed at the bonding portion between the heat sink 31 and the metal layer 13 (Cu layer 13B), and the Si concentration of the first Al—Ti—Si layer 37A that is formed on the second Ti layer 35 side is higher than the Si concentration of the second Al—Ti—Si layer 37B that is formed on the heat sink 31 side. According to this, diffusion of Ti atoms to the heat sink 31 side is suppressed due to the first Al—Ti—Si layer 37A in which the Si concentration is high, and thus it is possible to make the thickness of the Al—Ti—Si layer 37 small.

[0092] The concentration of Si contained in the second Al—Ti—Si layer 37B, which is formed on the heat sink 31 side, is set to be equal to or greater than 0.6 at % and less than 10 at %. According to this, excessive diffusion of Al atoms to the second Ti layer 35 side is suppressed, and thus it is possible to make the thickness of the second Al—Ti—Si layer 37B small. In addition, the concentration of Si contained in the first Al—Ti—Si layer 37A, which is formed on the second Ti layer 35 side, is set to 10 at % to 30 at %. According to this, excessive diffusion of Ti atoms to the heat sink 31 side is suppressed, and thus it is possible to make the thickness of the first Al—Ti—Si layer 37A small.

[0093] In addition, in a case where scratches exist on bonding surfaces during the solid-phase diffusion bonding, a gap may occur during the solid-phase diffusion bonding. However, in this embodiment, after removing scratches on bonding surfaces to make the bonding surfaces smooth, the Al layer 13A, the first titanium foil 25, the copper plate 23B, the second titanium foil 45, and the heat sink 31 are subjected to the solid-phase diffusion bonding, and thus occurrence of a gap at respective bonding interface is suppressed, and thus reliable bonding is possible.

Second Embodiment

[0094] Next, description will be given of a heat sink according to a second embodiment of the invention. FIG. 6 shows a heat sink 101 according to the second embodiment of the invention.

[0095] The heat sink 101 includes a heat sink main body 110, and a metal member layer 118 that is laminated on one surface (upper side in FIG. 6) of the heat sink main body 110 and is constituted by copper, nickel, or silver. The thickness of the metal plate 128 is preferably 0.001 mm to 3 mm, but there is no limitation to this range. In this embodiment, as shown in FIG. 9, the metal member layer 118 is configured through bonding of a metal plate 128 that is constituted by an oxygen-free copper rolled plate having a thickness of 2 mm.

[0096] The heat sink main body 110 is provided with a flow passage 111 through which a cooling medium flows. The heat sink main body 110 is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature (548° C.) of a metal element (Cu in this embodiment) that constitutes the metal member layer 118 and Al. Specifically, the heat sink main body 110 is constituted by ADC5 (solidus temperature is 535° C.) that is a die-casting aluminum alloy defined in JIS H 2118:2006. ADC5 is an aluminum alloy that contains Mg in a range of 4.1 to 8.5 mass %. The solidus temperature of the aluminum alloy that constitutes the heat sink main body 110 is preferably set to be equal to or greater than 515° C. and less than 548° C., but there is no limitation to this range.

[0097] Here, a Ti layer 115 is formed at a bonding portion between the heat sink main body 110 and the metal member layer 118.

[0098] The metal member layer 118 and the Ti layer 115, and the Ti layer 115 and the heat sink main body 110 are respectively subjected to the solid-phase diffusion bonding.

[0099] As shown in FIG. 7, a Cu—Ti layer 116 is formed at a bonding interface between the metal member layer 118 and the Ti layer 115. In this embodiment, the thickness t1 of the Cu—Ti layer 116 is set to be in a range of 1 μm≦t1≦8 μm. The thickness t1 of the Cu—Ti layer 116 is preferably set in a range of 2 μm≦t1≦6.5 μm, but there is no limitation to this range.

[0100] Next, description will be given of a method of manufacturing the heat sink 101 according to this embodiment with reference to FIG. 8 and FIG. 9.

[0101] (Ti/Metal Member Layer Bonding Step S101)

[0102] First, as shown in FIG. 9, a metal plate 128 that becomes the metal member layer 118, and titanium foil 125 that becomes the Ti layer 115 are laminated, and the resultant laminated body is put in a vacuum heating furnace and is heated therein in a pressurized state (pressure is set to 1 to 35 kgf/cm.sup.2 (0.10 to 3.43 MPa)) in a laminating direction to subject the metal plate 128 and the titanium foil 125 to the solid-phase diffusion bonding. In respective bonding surfaces, which are subjected to the solid-phase diffusion bonding, of the metal plate 128 and the titanium foil 125, scratches on the bonding surfaces are removed in advance, and thus the bonding surfaces are made to be smooth. In addition, the purity of the titanium foil 125 is set to 99 mass % or greater, and the thickness of the titanium foil 125 is set to 3 μm to 40 μm. In this embodiment, the thickness is set to 10 μm.

[0103] Here, it is preferable that a pressure inside the vacuum heating furnace is set to be in a range of 10.sup.−6 Pa to 10.sup.−3 Pa, a heating temperature is set to 600° C. to 670° C., and retention time is set to be in a range of 30 minutes to 180 minutes. It is more preferable that the heating temperature is set to 630° C. to 670° C., and the retention time is set to be in a range of 45 minutes to 120 minutes, but there is no limitation to the ranges.

[0104] (Heat Sink Main Body/Ti Bonding Step S102)

[0105] Next, the Ti layer 115 and the heat sink main body 110 are laminated, and the resultant laminated body is put in a vacuum heating furnace and is heated therein in a pressurized state (pressure is set to 1 to 35 kgf/cm.sup.2 (0.10 to 3.43 MPa)) in a laminating direction to subject the Ti layer 115 and the heat sink main body 110 to the solid-phase diffusion bonding. In respective bonding surfaces, which are subjected to the solid-phase diffusion bonding, of the Ti layer 115 and the heat sink main body 110, scratches on the bonding surfaces are removed in advance, and thus the bonding surfaces are made to be smooth.

[0106] Here, it is preferable that a pressure inside the vacuum heating furnace is set to be in a range of 10.sup.−6 Pa to 10.sup.−3 Pa, a heating temperature is set to 400° C. to 520° C., and retention time is set to be in a range of 3 hours to 24 hours. Furthermore, it is more preferable that the heating temperature is set to 480° C. to 520° C., and the retention time is set to be in a range of 18 hours to 24 hours, but there is no limitation to the ranges.

[0107] In this manner, the heat sink 101 according to this embodiment is manufactured.

[0108] According to the heat sink 101 according to this embodiment configured as described above, the metal member layer 118 is formed by bonding the metal plate 128 constituted by an oxygen-free copper rolled plate on one surface of the heat sink main body 110, and thus it is possible to spread heat in a plane direction due to the metal member layer 118, and thus it is possible to greatly improve heat radiation properties. In addition, it is possible to bond another member and the heat sink 101 by using solder and the like in a satisfactory manner.

[0109] The heat sink main body 110 is constituted by an aluminum alloy in which the solidus temperature is set to be less than the eutectic temperature (548° C.) of the metal element (Cu in this embodiment) that constitutes the metal member layer 118 and Al. Specifically, the heat sink main body 110 is constituted by ADC5 (solidus temperature is 535° C.) that is a die-casting aluminum alloy defined in JIS H 2118:2006. According to this, it is possible to construct the heat sink main body 110 with a complicated structure provided with a flow passage and the like.

[0110] The Ti layer 115 is formed at a bonding portion between the heat sink main body 110 and the metal member layer 118, and the metal member layer 118 and the Ti layer 115, and the Ti layer 115 and the heat sink main body 110 are respectively subjected to the solid-phase diffusion bonding. According to this, it is possible to suppress mutual diffusion of Al atoms of the heat sink main body 110 and Cu atoms of the metal member layer 118 due to the Ti layer 115. As a result, it is possible to suppress formation of a hard and brittle intermetallic compound layer in a large thickness due to occurrence of a liquid phase at the bonding portion between the heat sink main body 110 and the metal member layer 118. As a result, it is possible to obtain the heat sink 101 having satisfactory bonding reliability between the heat sink main body 110 and the metal member layer 118.

[0111] In this embodiment, after the titanium foil 125 that becomes the Ti layer 115, and the metal plate 128 that becomes the metal member layer 118 are subjected to the solid-phase diffusion bonding in the Ti/metal member layer bonding step S101, the Ti layer 115 and the heat sink main body 110 are subjected to the solid-phase diffusion bonding in the heat sink main body/Ti bonding step S102. According to this, it is possible to set bonding conditions (temperature, time) between the titanium foil 125 and the metal plate 128 in the Ti/metal member layer bonding step S101 in a relatively free manner, and thus it is possible to reliably subject the Ti layer 115 and the metal member layer 118 to the solid-phase diffusion bonding. In this embodiment, the Cu—Ti layer 116 of which the thickness t1 is set to be in a range of 1 μm≦t1≦8 μm is formed at the bonding interface between the metal member layer 118 and the Ti layer 115, and thus the metal member layer 118 and the Ti layer 115 are reliably bonded to each other.

[0112] In the heat sink main body/Ti bonding step S102, it is possible to reliably subject the Ti layer 115 and the heat sink main body 110 to the solid-phase diffusion bonding under a low-temperature condition in which the heat sink main body 110 is not melted.

[0113] Hereinbefore, the embodiments of the invention have been described. However, the invention is not limited thereto, and appropriate modifications can be made in a range not departing from the technical idea of the invention.

[0114] For example, in the embodiments, description has been given of a case where as the metal member layer, the Cu layer constituted by copper is subjected to the bonding. However, a Ni layer constituted by nickel or a nickel alloy, or a Ag layer constituted by silver or a silver alloy may be subjected to the bonding instead of the Cu layer.

[0115] In a case where the Ni layer is formed instead of the Cu layer, solderability becomes satisfactory, and thus it is possible to improve bonding reliability with another member. In addition, in a case where the Ni layer is formed through the solid-phase diffusion bonding, a masking process, which is performed when forming the Ni plating film through electroless plating and the like, is not necessary, and thus it is possible to reduce the manufacturing cost. In this case, it is preferable that the thickness of the Ni layer is set to 1 μm to 30 μm. In a case where the thickness of the Ni layer is less than 1 there is a concern that the effect of improving the bonding reliability with another member may disappear. In a case where the thickness is greater than 30 μm, the Ni layer serves as a thermal resistive body, and thus there is a concern that it is difficult to efficiently transfer heat. In addition, in a case of forming the Ni layer through the solid-phase diffusion bonding, the solid-phase diffusion bonding can be performed under the same conditions as in the above-described embodiments. The thickness of the Ni layer is more preferably set to 1 μm to 15 μm, but there is no limitation to this range.

[0116] In a case of forming the Ag layer instead of the Cu layer, for example, silver oxide paste, which contains silver oxide particles and a reducing agent composed of an organic, is used during bonding with another member, and bonding between silver reduced from silver oxide and the Ag layer is bonding between the same kinds of metals. Accordingly, it is possible to improve bonding reliability. In addition, an Ag layer having satisfactory thermal conductivity is formed, and thus heat is spread in a plane direction, and heat transfer can be efficiently performed. In this case, it is preferable that the thickness of the Ag layer is set to 1 μm to 20 μm.

[0117] In a case where the thickness of the Ag layer is less than 1 μm, there is a concern that an effect of improving the bonding reliability with another member is not obtained. In addition, in a case where the thickness is greater than 20 μm, the effect of improving the bonding reliability is not obtained, and thus an increase in the cost is caused. In addition, in a case of forming the Ag layer through the solid-phase diffusion bonding, the solid-phase diffusion bonding may be performed under the same conditions as in the above-described embodiments. It is preferable that the thickness of the Ag layer is set to 1 μm to 10 μm, but there is no limitation to this range.

[0118] In the first embodiment, description has been given of a configuration in which the metal layer 13 includes Al layer 13A and the Cu layer 13B. However, there is no limitation to this configuration, and the entirety of the metal layer may be constituted by copper or a copper alloy as shown in FIG. 10. In a power module substrate with heat sink 230 shown in FIG. 10, a copper plate is bonded to the other surface (a lower side in FIG. 10) of the ceramic substrate 11 by a DBC method, an active metal brazing method, and the like, and thus a metal layer 213 constituted by copper or a copper alloy is formed. In addition, the metal layer 213 and a Ti layer 235, and the Ti layer 235 and the heat sink 31 are respectively subjected to the solid-phase diffusion bonding. In a power module substrate 210 shown in FIG. 10, a circuit layer 212 is also constituted by copper or a copper alloy.

[0119] In the first embodiment, description has been given of a configuration in which the circuit layer is formed through bonding of the aluminum plate having the purity of 99 mass %. However, there is no limitation to the configuration, and the circuit layer may be constituted by other metals such as different aluminum or aluminum alloy, copper, and a copper alloy.

[0120] The circuit layer may be set to have a two-layer structure of an Al layer and a Cu layer. This is also true of a power module substrate shown in FIG. 10.

[0121] In the first embodiment, the circuit layer and Al layer forming step S02, the Cu layer (metal layer) forming step S03, and the Ti/metal layer bonding step S04 are separately performed. However, there is no limitation thereto, and the steps may be collectively performed. That is, the power module substrate 10 can be manufactured as follows. The aluminum plate 22 is laminated on one surface of the ceramic substrate through the Al—Si-based brazing material foil 26. The Al—Si-based brazing material foil 26, the aluminum plate 23A, the first titanium foil 25, the copper plate 23B, and the second titanium foil 45 are laminated on the other surface in this order from a ceramic substrate side. The resultant laminated body is heated (600° C. to 643° C.) for retention time of 30 minutes to 180 minutes in a pressurized state (pressure is set to 1 to 35 kgf/cm.sup.2 (0.10 to 3.43 MPa)) in a laminating direction.

EXAMPLES

[0122] Hereinafter, description will be given of results of a supporting experiment that was performed to confirm the effect of the invention.

Example 1

[0123] An aluminum plate (50 mm×50 mm×5 mm (thickness)) and a metal plate (40 mm×40 mm), which are shown in Table 1, were prepared. In addition, titanium foil having the purity of 99 mass % and the thickness of 10 μm was prepared.

[0124] In Examples 1 to 6, the metal plate and the titanium foil in Table 1 were subjected to the solid-phase diffusion bonding under conditions shown in Table 1. Then, the metal plate to which the titanium foil was bonded, and the aluminum plate were subjected to the solid-phase diffusion bonding under conditions shown in Table 1.

[0125] In Comparative Examples 1 and 2, bonding of the metal plate, the titanium foil, and the aluminum plate was simultaneously performed.

[0126] In a bonded body manufactured as described above, a cross-section of a bonding portion between the metal plate and the Ti layer was observed to measure the thickness of an intermetallic compound layer of a metal element that constitutes the metal plate and Ti.

[0127] In addition, a bonding rate of the bonding portion between the aluminum plate and the metal plate was measured. A specific sequence of evaluation is described below.

[0128] (Observation of Cross-Section and Measurement of Thickness of Intermetallic Compound Layer of Metal Element that Constitutes Metal Plate and Ti)

[0129] The cross-section of the bonded body was ion-etched by using a cross-section polisher (SM-09010, manufactured by JEOL Ltd.) under conditions of an ion acceleration voltage: 5 kV, processing time: 14 hours, and the amount of protrusion from a shielding plate: 100 μm. Next, the bonding portion between the metal plate and the Ti layer was observed with EPMA (JXA-8530F, manufactured by JEOL Ltd.) at five visual fields, each being set to a magnification of 2000 times (45 μm (vertical); 60 μm (horizontal)), and mapping of Ti was performed. An area of the intermetallic compound layer was obtained, and the area was divided by dimensions of a width of the measurement visual field to calculate a thickness, and an average of the thickness of the five visual fields was set to the thickness of the intermetallic compound layer.

[0130] In a case of using a metal plate constituted by copper, a region in which a Ti concentration was 19 at % to 67 at % was set to the intermetallic compound layer.

[0131] In a case of using a metal plate constituted by nickel, a region in which the Ti concentration was 25 at % to 67 at % was set to the intermetallic compound layer.

[0132] In a case of using a metal plate constituted by silver, a region in which the Ti concentration was 50 at % to 67 at % was set to the intermetallic compound layer.

[0133] (Evaluation of Bonding Rate)

[0134] The bonding rate of the bonding portion between the aluminum plate and the metal plate of the bonded body was evaluated by using an ultrasonic test device (FineSAT200, manufactured by Hitachi Power Solutions Co., Ltd.), and was calculated by the following Expression. Here, an initial bonding area is an area to be bonded before bonding, and was set as an area of the aluminum plate (50 mm×50 mm). Peeling-off is shown as a white portion in an image obtained through binarization of an ultrasonic test image, and thus an area of the white portion was set as a peeling-off area.

Bonding Rate (%)={(initial bonding area)−(peeling-off area)}/(initial bonding area)×100

[0135] Results of the above-described evaluation are shown in Table 1.

TABLE-US-00001 TABLE 1 Observation of Metal plate/ Ti/aluminum plate cross-section* Aluminum plate Metal plate Ti bonding bonding Thickness of Solidus Thickness Temperature Time Temperature Time intermetallic Bonding Material temperature (° C.) Material (μm) (° C.) (minute) (° C.) (hour) compound (μm) rate (%) Example 1 AC2A 520 Oxygen-free 2000 650 180 450 12 6 96.9 copper Example 2 AC4B 520 Oxygen-free 2000 650 180 450 12 6 95.8 copper Example 3 ADC10 535 Oxygen-free 2000 650 30 500 20 2 96.5 copper Example 4 ADC12 515 Oxygen-free 2000 650 90 500 6 4 97.0 copper Example 5 ADC12 515 Nickel 10 650 90 500 6 3 95.9 Example 6 ADC12 515 Silver 5 650 90 500 6 5 95.0 Comparative ADC12 515 Oxygen-free 2000 500 360 500 6 0 0.0 Example 1 copper Comparative ADC12 515 Oxygen-free 2000 650 90 650 1.5 — 73.8 Example 2 copper *Observation of a cross-section: observation of a cross-section of a bonding interface between a metal plate and a Ti layer/evaluation of the thickness of an intermetallic compound of a metal element that constitutes the metal plate and Ti

[0136] In Comparative Example 1, bonding of the metal plate, the titanium foil, and the aluminum plate was simultaneously performed, and a bonding temperature was set to be less than a solidus temperature of the aluminum plate. In Comparative Example 1, the metal plate and the titanium foil (Ti layer) were not sufficiently bonded.

[0137] In Comparative Example 2, bonding of the metal plate, the titanium foil, and the aluminum plate was simultaneously performed, and the bonding temperature was set to equal to or greater than a solidus temperature of the aluminum plate. In Comparative Example 2, a part of the aluminum plate was melted, and thus the bonding rate greatly decreased. Furthermore, in Comparative Example 2, a part of the aluminum plate was melted, and thus it was difficult to measure the layer thickness of the intermetallic compound.

[0138] In contrast, in Examples 1 to 6, after bonding the metal plate and the titanium foil (Ti layer), the Ti layer and the aluminum plate were bonded. In Examples 1 to 6, the metal plate and the titanium foil (Ti layer) could be subjected to the solid-phase diffusion bonding under a relatively high temperature condition, and thus it was possible to reliably bond the metal plate and the Ti layer. In addition, the aluminum plate and the Ti layer could be reliably bonded at a temperature of less than the solidus temperature.

Example 2

[0139] An aluminum plate (50 mm×50 mm×5 mm (thickness)) and a metal plate (40 mm×40 mm), which are shown in Table 2, were prepared. In addition, titanium foil having the purity of 99 mass % and the thickness of 10 μm was prepared.

[0140] In Examples 11 to 17, the metal plate and the titanium foil in Table 2 were subjected to the solid-phase diffusion bonding under conditions shown in Table 2. Then, the metal plate to which the titanium foil was bonded, and the aluminum plate were subjected to the solid-phase diffusion bonding under conditions shown in Table 2.

[0141] In a bonded body manufactured as described above, a cross-section of a bonding portion between the metal plate and the Ti layer was observed to measure the thickness of an intermetallic compound layer of a metal element that constitutes the metal plate and Ti. The thickness measuring method was set to the same as in Example 1.

[0142] The Si concentration of the first Al—Ti—Si layer and the second Al—Ti—Si layer was obtained as follows.

[0143] The bonded body was mechanically cut out in the laminating direction. A cross-section that was obtained was mechanically polished by a thickness of approximately 30 μm, and was set as a cross-section sample. Then, argon ions set to 4 kV were incident to the vicinity of the bonding interface from upper and lower sides (the laminating direction and surfaces perpendicular) at an angle of 4°, and the cross-section sample was made to be thin with sputtering until a hole was formed in the cross-section sample. An edge of the hole became an edge shape, and the thickness thereof was approximately 0.1 μm through which electron beams could be transmitted. Accordingly, this portion was measured with TEM and EDS. Measurement with TEM and EDS was performed using Titan ChemiSTEM (attached with EDS detector) manufactured by FEI Company under conditions of an acceleration voltage of 200 kV, a beam diameter of 5 nm, and a magnification of 10000 times.

[0144] In the measurement with TEM and EDS, line analysis of Si was performed from the Ti layer side toward the aluminum plate side (aluminum member side), and a peak of Si, which appeared for the first time, was set as the Si concentration of the first Al—Ti—Si layer, and a site spaced away from the peak to the aluminum plate side by 150 nm was set as the Si concentration of the second Al—Ti—Si layer.

[0145] A bonding rate of the bonding portion between the aluminum plate and the metal plate after a thermal cycling test was measured. In the thermal cycling test, a thermal shock tester TSB-51 (manufactured by ESPEC CORP.) was used, and a cycle for five minutes at −40° C. and for five minutes at 150° C. was repeated 4000 cycles in a liquid phase (fluorine-based inert liquid (Fluorinert, manufactured by 3M)) with respect to each bonded body. The method of measuring the bonding rate was set to be the same as in Example 1.

TABLE-US-00002 TABLE 2 Aluminum plate Solidus Metal plate Metal plate/Ti bonding Ti/aluminum plate bonding temperature Thickness Temperature Temperature Material (° C.) Material (μm) (° C.) Time (minute) (° C.) Time (hour) Example 11 AC4B 520 Oxygen-free 2000 650 90 450 2 copper Example 12 ADC10 535 Oxygen-free 2000 650 90 450 5 copper Example 13 ADC10 535 Oxygen-free 2000 650 90 480 15 copper Example 14 ADC10 535 Oxygen-free 2000 650 90 500 15 copper Example 15 ADC12 515 Oxygen-free 2000 650 90 500 18 copper Example 16 ADC12 515 Oxygen-free 2000 650 90 520 24 copper Example 17 AC2A 520 Oxygen-free 2000 650 90 520 50 copper

TABLE-US-00003 TABLE 3 Observation of cross-section* Thickness of Si concentration (at %) Bonding rate intermetallic First Second After compound Al—Ti—Si Al—Ti—Si Initial cycle (μm) layer layer (%) (%) Example 11 4 8.4 0.3 83.1 69.2 Example 12 4 10.1 0.6 95.3 93.1 Example 13 4 17.4 2.1 97.4 94.0 Example 14 4 18.1 2.7 97.3 94.2 Example 15 4 15.2 4.8 98.1 95.4 Example 16 4 18.3 9.6 96.6 93.2 Example 17 4 24.8 11.9 95.8 80.1 *Observation of a cross-section: observation of a cross-section of a bonding interface between a metal plate and a Ti layer/evaluation of the thickness of an intermetallic compound of a metal element that constitutes the metal plate and Ti

[0146] In Examples 12 to 16 in which the Si concentration of the second Al—Ti—Si layer was 0.6 at % to 9.6 at %, an initial bonding rate, and a bonding rate after the thermal cycle were high, and thus a bonded body excellent in the bonding reliability was obtained.

[0147] On the other hand, in Example 11 in which the Si concentration of the second Al—Ti—Si layer was 0.3 at %, the initial bonding rate slightly decreased in comparison to Examples 12 to 14.

[0148] In Example 17 in which the Si concentration of the second Al—Ti—Si layer was 11.9 at %, the Si concentration was high, and thus the bonding interface became hard, and the bonding reliability slightly decreased.

INDUSTRIAL APPLICABILITY

[0149] According to the bonded body, the power module substrate with heat sink, the heat sink, and the method of manufacturing the same of the invention, it is possible to bond an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver in a satisfactory manner. According to this, the bonded body, the power module substrate with heat sink, and the heat sink of the invention are suitable for a large-power control power semiconductor element that is used to control wind power generation, an electric vehicle, a hybrid vehicle, and the like.

REFERENCE SIGNS LIST

[0150] 10, 210: Power module substrate [0151] 11: Ceramic substrate [0152] 13, 213: Metal layer [0153] 13B: Cu layer (metal member) [0154] 31: Heat sink (aluminum member) [0155] 35: Second Ti layer (Ti layer) [0156] 45: Second titanium foil (Ti material) [0157] 101: Heat sink [0158] 110: Heat sink main body [0159] 115: Ti layer [0160] 118: Metal member layer