A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

A cooling type housing (100) for housing a heating element (50) inside, including: an assembled metal housing (10); and a cooling flow path (30) provided at least on one surface (10A) of the metal housing (10), in which a heat medium flows, in which the cooling flow path (30) constitutes at least a part of the one surface (10A) of the metal housing (10).

A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

Cooling device (15) for cooling semiconductor switching elements (10, 11), comprising a first wall (17) having a first side (18) for carrying the semiconductor switching elements (10, 11) and having a second side (19) being opposite the first side (18), a second wall (20) having a first side (21) that forms a main cooling channel (22) together with the second side (19) of the first wall (17) and having a second side (25) being opposite to the first side (21) of the second wall (20), and a third wall (23) that forms an auxiliary cooling channel (24) together with the second side (25) of the second wall (20), wherein the second wall (20) comprises a connection means (26) that connects the auxiliary cooling channel (24) with the main cooling channel (22) in a fluid-conductive manner.

Cooling device (15) for cooling semiconductor switching elements (10, 11), comprising a first wall (17) having a first side (18) for carrying the semiconductor switching elements (10, 11) and having a second side (19) being opposite the first side (18), a second wall (20) having a first side (21) that forms a main cooling channel (22) together with the second side (19) of the first wall (17) and having a second side (25) being opposite to the first side (21) of the second wall (20), and a third wall (23) that forms an auxiliary cooling channel (24) together with the second side (25) of the second wall (20), wherein the second wall (20) comprises a connection means (26) that connects the auxiliary cooling channel (24) with the main cooling channel (22) in a fluid-conductive manner.

A power switch module includes a semiconductor die and a conductive busbar. The semiconductor die is electrically conductively mounted to the busbar. The module also includes a dielectric coolant fluid and the busbar and the semiconductor die mounted thereto are immersed in the dielectric coolant fluid.

A power switch module includes a semiconductor die and a conductive busbar. The semiconductor die is electrically conductively mounted to the busbar. The module also includes a dielectric coolant fluid and the busbar and the semiconductor die mounted thereto are immersed in the dielectric coolant fluid.

A heat exchanger includes a plurality of fins that are spaced from each other and are arranged to divide a heat medium flow passage into a plurality of narrow passages. Each fin incudes a plurality of thick wall portions and a plurality of thin wall portions which are alternately arranged in a passage longitudinal direction. Each adjacent two of the plurality of fins, which are adjacent to each other, are defined as one fine and another fin, and each of the plurality of thick wall portions of the one fin is opposed to an adjacent one of the plurality of thin wall portions of the another fin in a fin arrangement direction, and each of the plurality of thin wall portions of the one fin is opposed to an adjacent one of the plurality of thick wall portions of the another fin in the fin arrangement direction.

Systems including power device embedded PCBs coupled to cooling devices and methods of forming the same are disclosed. One system includes a power device embedded PCB stack, a cooling assembly including a cold plate having one or more recesses therein, and a buffer cell disposed within each of the one or more recesses. The cooling assembly is bonded to the PCB stack with a insulation substrate disposed therebetween. The cooling assembly is arranged such that the buffer cell faces the PCB stack and absorbs stress generated at an interface of the PCB stack and the cooling assembly.