REDUCTIVE BORON NITRIDE WITH EXTENDED REACTIVE VACANCIES FOR CATALYTIC APPLICATIONS
20210370271 · 2021-12-02
Inventors
- Mauricio Terrones (State College, PA)
- Yu Lei (State College, PA, US)
- He Liu (State College, PA, US)
- Kazunori Fujisawa (State College, PA, US)
- Ann Laura Elias Arriaga (State College, PA, US)
- Tianyi Zhang (State College, PA, US)
- Eduardo Cruz-Silva (Nagano, JP)
- Moronobu Endo (Nagano, JP)
- Xiaoxing Wang (State College, PA, US)
Cpc classification
C01B21/0648
CHEMISTRY; METALLURGY
C01P2004/20
CHEMISTRY; METALLURGY
B01J37/009
PERFORMING OPERATIONS; TRANSPORTING
C01P2002/72
CHEMISTRY; METALLURGY
B01J21/02
PERFORMING OPERATIONS; TRANSPORTING
International classification
B01J21/02
PERFORMING OPERATIONS; TRANSPORTING
B01J37/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A group of reductive 2D materials (R2D) with extended reactive vacancies and a method for making the R2D with extended reactive vacancies are provided, especially the example of the reductive boron nitride (RBN). To create defects such as vacancies, boron nitride (BN) powders are milled at cryogenic temperatures. Vacancies are produced by milling, and the vacancies can be used to reduce various metal nanostructures on RBN. Due to the thermal stability of the RBN and the enhanced catalytic performance of metal nanostructures, RBN-metals can be used for different catalysts, including electrochemical catalysts and high temperature catalysts.
Claims
1. A reductive boron nitride (RBN), wherein the RBN is a defective hexagonal boron nitride with chemical reactive sites that are randomly distributed on its surface, and wherein the chemical reactive sites are configured for reducing metal compounds or single metal atoms to their lower oxidation states.
2. The RBN of claim 1, wherein the metal compounds and metal atoms comprise Pt, Au, Ag, Pd, Fe, Co, and Ni, and any combination thereof.
3. The RBN of claim 1, wherein the chemical reactive sites are lattice imperfections.
4. The RBN of claim 3, wherein the lattice imperfections are extended reactive vacancies or reactive edges.
5. The RBN of claim 1, wherein the chemical reactive sites have reactive edges, and wherein the average lateral size of the reactive edges is from 400 μm to 10 micrometers.
6. The RBN of claim 1, wherein the chemical reactive sites have extended reactive vacancies, and wherein the average diameter of the extended reactive vacancies is from 170 μm to 50 nm.
7. The RBN of claim 1, wherein the chemical reactive sites have extended reactive vacancies, and wherein the extended reactive vacancies are configured for reducing the bandgap of hexagonal boron nitride (hBN) from insulating boron nitride (BN) to semiconducting RBN.
8. The RBN of claim 7, wherein the bandgap of the insulating BN is from 5 to 6 eV, and the bandgap of the semiconducting RBN is from 0.1 to 4.99 eV.
9. The RBN of claim 1, wherein the chemical reactive sites have extended reactive vacancies, and wherein the extended reactive vacancies are configured for emitting photons with energies ranging from 315 nm to 1400 nm.
10. The RBN of claim 1, wherein the average particle size of the RBN is less than 10 μm, and the surface area of the RBN is greater than 30 m.sup.2/g.
11. The RBN of claim 1, wherein the extended reactive vacancies are configured to reduce and anchor metal atoms and metal compounds in/on the RBN lattice to form a metal nanostructure decorated RBN.
12. The metal nanostructure-decorated RBN of claim 11, wherein the metal nanostructure decorated RBN comprises an isolated single atom, few-atom clusters with an average size ranging from 175 μm to 1 nm, nanoparticles with an average size ranging from 1 nm to 500 nm, and any combination thereof.
13. The metal nanostructure decorated RBN of claim 11, wherein the metal atom is used in a catalytic application, wherein the catalytic application comprises a hydrogen evolution reaction, an oxygen evolution reaction, an oxygen reduction reaction, an acetylene cyclotrimerization, a HCHO oxidation, a methanol oxidation, a CO oxidation, CO.sub.2 methanation, and a CO.sub.2 reduction.
14. A method for making reductive boron nitride (RBN) with extended reactive vacancies comprising mechanical grinding of hexagonal boron nitride at a cryogenic temperature to create extended reactive vacancies.
15. The method of claim 14, wherein the grinding time is longer than 0 min.
16. The method of claim 14, wherein the cryogenic temperature is at or below 123 K.
17. The method of claim 14, wherein the mechanical grinding is conducted in containers with one or more movable impactors.
18. A method for making metal nanostructure decorated reductive boron nitride (RBN) comprising: a) mixing RBN, wherein the RBN comprises extended reactive vacancies, with a metal precursor in a polar or non-polar solvent or solvents at room temperature; b) washing away excess metal compounds with polar or non-polar solvent or solvents by centrifugation or filtration; and c) re-dispersing materials obtained from b) in polar or non-polar solvent or solvents, wherein obtained liquid suspensions is used as is or as powders after evaporating the solvent or solvents.
19. The method of claim 18, wherein the metal is selected from all metals, and any combination thereof.
20. The method of claim 18, wherein the metals are in ionic form, and wherein the ionic form comprises Ag.sup.+, Pt.sup.4+, Au.sup.3+ in the obtained liquid suspensions.
21. The method of claim 18, wherein the solvent of the obtained liquid suspension is selected from the group consisting of polar and non-polar solvents, and wherein the solvent comprises ethanol, isopropanol, hexane, acetone, and any combination thereof.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE INVENTION
Definitions
[0043] While the terms used herein are believed to be well understood by one of ordinary skill in the art, definitions are set forth herein to facilitate explanation of the subject matter disclosed herein.
[0044] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the subject matter disclosed herein belongs. Although any methods, devices, and materials similar or equivalent to those described herein can be used in the practice or testing of the presently disclosed subject matter, representative methods, devices, and materials are described herein.
[0045] The terms “a,” “an,” and “the” refer to “one or more” when used in this application, including the claims. The use of the word “a” or “an” when used in conjunction with the term “comprising” in the claims and/or the specification may mean “one,” but it is also consistent with the meaning of “one or more,” “at least one,” and “one or more than one.”
[0046] All references to singular characteristics or limitations of the present disclosure shall include the corresponding plural characteristic(s) or limitation(s) and vice versa, unless otherwise specified or clearly implied to the contrary by the context in which the reference is made.
[0047] All combinations of method or process steps as used herein can be performed in any order, unless otherwise specified or clearly implied to the contrary by the context in which the referenced combination is made.
[0048] The methods and devices of the present disclosure, including components thereof, can comprise, consist of, or consist essentially of the essential elements and limitations of the embodiments described herein, as well as any additional or optional components or limitations described herein or otherwise useful.
[0049] Unless otherwise indicated, all numbers expressing physical dimensions, quantities of ingredients, properties such as reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term “about”. Accordingly, unless indicated to the contrary, the numerical parameters set forth in this specification and claims are approximations that can vary depending upon the desired properties sought to be obtained by the presently disclosed subject matter.
[0050] As used herein, ranges can be expressed as from “about” one particular value, and/or to “about” another particular value. It is also understood that there are a number of values disclosed herein, and that each value is also herein disclosed as “about” that particular value in addition to the value itself. For example, if the value “10” is disclosed, then “about 10” is also disclosed. It is also understood that each unit between two particular units are also disclosed. For example, if 10 and 15 are disclosed, then 11, 12, 13, and 14 are also disclosed.
EXAMPLE 1
Reductive Boron Nitride with Spontaneously Reduced Pt/AgPt for HER Catalyst
[0051] In the present invention, two-dimensional (2D) boron nitride (BN) with mechanically activated defects was selected as an ideal support to spontaneously reduce Pt single atom and AgPt subnanoclusters. Although BN itself is rarely considered as a promising catalyst, its excellent chemical stability, high thermal conductivity, and large band gap of 5.5 eV make it a strong candidate as catalyst support under various harsh conditions (e.g., high temperature, acid, and base). By introducing defects such as vacancies and hetero-atoms, BN can be activated to reductive boron nitride (RBN) so that the optical bandgap is reduced, and various defect levels are created within the forbidden gap. An RBN is a defective hexagonal boron nitride with chemical reactive sites that are randomly distributed on the surface and are capable of reducing metal compounds to their lower oxidation states including but not limited to metallic clusters and single atoms.
[0052] To create defects, BN powders were cryo-milled at −196° C. for a certain time as shown in
[0053] The reactivity from the RBN is attributed to the defects including edges and vacancies in RBN. The X-ray diffraction (XRD) in
[0054] The introduced vacancies are also responsible for the created defect levels between the valence and conduction band of BN, giving rise to various photon emissions ranging from 1.59 to 2.19 eV.sup.2. Room temperature photoluminescence spectra of 90RBN collected from 3 sites shown in
[0055] By reducing atomically dispersed Pt atoms and AgPt subnanoclusters on RBN, the compounds can be used as the catalyst for hydrogen evolution reaction (HER). The HER performance of RBN with atomically dispersed Pt and AgPt subnanoclusters (Ag.sub.1Pt.sub.1) was investigated in a 0.5 M H.sub.2SO.sub.4 solution. For an efficient HER catalyst, a high turnover frequency (TOF) and exchange current, and a low Tafel slope and onset potential are needed. The 90RBN (shown in
EXAMPLE 2
Other Metal Reduction Using Reductive Boron Nitride (RBN)
[0056] To reduce other metals, RBN powders were mixed with different aqueous solutions of metal precursors to reduce different metals into single atom and/or nanoclusters. In particular, 90RBN were mixed with AgNO.sub.3, FeCl.sub.3, CuSO.sub.4, and HAuCl.sub.4 to obtain Ag, Fe, Cu, and Au, respectively. As seen in
[0057] An advantage of using RBN as the metal support is that metals are reduced and confined at the vacancy sites, while the non-defect region still takes the advantage of the inert and thermally stable hBN. Ex-situ STEM experiments and statistical analysis were conducted using 90RBN-Pt with annealing temperature ranging from room temperature to 600° C. The majority of Pt atoms are single atoms until 200° C. (
[0058] Due to the capability of reducing metal ions into nanostructures and the thermal stability to avoid metal aggregation, the RBN-metal composites can be further used as the high temperature catalyst, such as CO.sub.2 methanation. As seen in
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EXAMPLE 3
Defective WS.SUB.2 .Via Cryo-Milling
[0060] WS.sub.2 (2 μm, 99%, Sigma-Aldrich) was milled in a solid state at a cryogenic temperature (˜77.2 K) in a cryogenic mill SPEX 6770 Freezer/Mill. The cryogenic grinding process consisted of an oscillating steel impactor within a plastic vial, immersed in liquid nitrogen. Prior to the grinding process, each sample was pre-cooled for 10 minutes, and then cryo-milled with different time/cycles (10. 30. 45 min). Each milling cycle corresponds to 3 min grinding followed by 2 min of cooling.
[0061] After cryomilling, the samples were characterized by XRD. In
[0062] Due to the lattice deformation and grain size reduction, cryo-milled WS.sub.2 is easier to be dispersed in solution. Acetone dispersions of pristine WS.sub.2, 15WS.sub.2, 30WS.sub.2 and 45WS.sub.2 (0.8 mg/mL) were prepared from the cryomilled powder by placing them under sonication for two hours and then pouring them into a 6 cm.sup.3 cell leaving an electrode gap of 1 cm. The electrophoretic deposition was carried out by applying 60 V using a 2400 Keithley sourcemeter between two cleaned FTO on glass electrodes for 30 sec. The dispersions prepared with the samples milled for 15, 30 and 45 min have a difference in colloidal stability as compared to the dispersion prepared with pristine WS.sub.2. It is expected that, as the particle size decreases, the contribution of the Brownian motion plays a more important role in providing colloidal stability.
EXAMPLE 4
Defective MoS.SUB.2 .Via Cryo-Milling
[0063] Molybdenum disulfide (MoS.sub.2) is a layered semiconductive transition metal dichalcogenide (TMD). The XRD pattern of pristine MoS.sub.2 is characteristic for the hexagonal with the highest intensity reflection peak at d=6.16 Å (002) as disclosed in
EXAMPLE 5
Defective Graphite Via Cryo-Milling
[0064] Graphite is a layered conducting material. Similar to BN, WS.sub.2, and MoS.sub.2, defects, edges, and exposed surfaces can be obtained by cryo-milling. As disclosed in
EXAMPLE 6
Defective Graphite Via Cryo-Milling
[0065] The method can also be extended to the mixture of different 2D materials, for example, graphite and boron nitride mixture. Boron nitride and graphite were mixed before the cryo-milling. After 2 h cryo-milling, the mixture was well mixed, and defects were created. As disclosed in
[0066] Although the present invention has been described in terms of specific exemplary embodiments and examples, it will be appreciated that the embodiments disclosed herein are for illustrative purposes only and various modifications and alterations might be made by those skilled in the art without departing from the spirit and scope of the invention as set forth in the following claims.
[0067] Documents reported herein are incorporated by reference in their entirety and do not carry an admission that they are prior art for any purpose. Where information specifically stated in this specification can be construed to contradict anything in the incorporated material, the information specifically stated in this specification shall control.
EXAMPLE 7
Defective MoS.SUB.2 .and WS.SUB.2 .Mixture Via Cryo-Milling for HER Catalyst
[0068] MoS.sub.2 and WS.sub.2 powders were also cryomilled together to form defective MoS.sub.2 and WS.sub.2 mixture. After 15-60 min cryo-milling, the powders were well mixed and defective. As seen in