SEMICONDUCTOR COOLING ARRANGEMENT WITH IMPROVED BAFFLE
20220199492 · 2022-06-23
Inventors
- Simon David HART (Welshpool, GB)
- Daniel RENDELL (Abingdon, GB)
- Paul Donald SPENDLEY (Banbury, GB)
- Rajesh KUDIKALA (Thatcham, GB)
Cpc classification
H05K7/209
ELECTRICITY
International classification
Abstract
A semiconductor cooling arrangement. The semiconductor cooling arrangement comprises one or more semiconductor assemblies, a housing, and one or more baffles. Each assembly comprises a heatsink and one or more semiconductor power devices mounted on and thermally coupled to the heatsink. The housing is for housing the one or more assemblies in a chamber within the housing, and comprises inlet and outlet ports in fluid communication with the chamber. The baffles are arranged such that fluid flows through each baffle to a respective heatsink. Each baffle comprises through-holes arranged such that fluid flows through the through holes to a region of the semiconductor assembly to which a semiconductor power device is mounted, or to a region of the heatsink opposite a location to which a semiconductor power device is mounted. Each baffle is a printed circuit board, comprising control and/or monitoring circuitry for an adjacent semiconductor assembly, and being electrically connected to the one or more semiconductor power devices of that semiconductor assembly.
Claims
1. A semiconductor cooling arrangement comprising: one or more semiconductor assemblies, each assembly comprising a heatsink and one or more semiconductor power devices mounted on and thermally coupled to the heatsink; a housing for housing the one or more assemblies in a chamber within the housing, the housing comprising inlet and outlet ports in fluid communication with the chamber; one or more baffles, arranged such that fluid flows through each baffle to a respective heatsink, each baffle comprising through-holes arranged such that fluid flows through the through holes to a region of the semiconductor assembly to which a semiconductor power device is mounted, or to a region of the heatsink opposite a location to which a semiconductor power device is mounted; wherein each baffle is a printed circuit board, each baffle comprising control and/or monitoring circuitry for an adjacent semiconductor assembly, and being electrically connected to the one or more semiconductor power devices of that semiconductor assembly.
2. The semiconductor cooling arrangement according to claim 1, wherein the control and/or monitoring circuitry comprises any one or more of: isolation of high voltage and low voltage circuits; logic circuits; local gate buffering circuits; resistances or impedances for controlling a gate of the semiconductor power device; local current balancing circuits; Miller clamping circuits; fast overcurrent protection circuits.
3. The semiconductor cooling arrangement according to claim 1, wherein the electrical connection between each baffle and the adjacent semiconductor assembly extends through the coolant between said baffle and said adjacent semiconductor assembly.
4. The semiconductor cooling arrangement according to claim 1, wherein each baffle comprises a temperature sensor, and comprising a thermally conductive element extending from each temperature sensor to the adjacent semiconductor assembly.
5. The semiconductor cooling arrangement according to claim 1 and configured such that fluid flows from each baffle to the semiconductor assembly which that baffle is electrically connected to
6. The semiconductor cooling arrangement according to claim 1, and configured such that fluid flows from each semiconductor assembly to the baffle which that semiconductor assembly is electrically connected to, and comprising an additional baffle located such that fluid flows from the additional baffle to the semiconductor assembly closest to the inlet port, wherein the additional baffle does not contain electronic components.
7. A switching device comprising a motherboard and the semiconductor cooling arrangement according to claim 1, wherein the motherboard comprises additional control and/or monitoring circuitry, and wherein the additional control and/or monitoring circuitry is electrically connected to the control and/or monitoring circuitry of each baffle.
8. The semiconductor cooling arrangement according to claim 1, wherein each semiconductor assembly comprises: a semiconductor die bonded to the heatsink, the semiconductor die containing the semiconductor power device; an encapsulant covering the semiconductor die, wherein the side of the heatsink to which the semiconductor die is bonded extends beyond the encapsulant; electrical connections passing through the encapsulant and to the semiconductor die.
9. The semiconductor cooling arrangement according to claim 8, wherein the semiconductor die is electrically coupled to the heatsink, and the heatsink acts as an electrical connection for one of: the drain or source of the semiconductor power device, where the semiconductor power device is a transistor; the collector or emitter of the semiconductor power device, where the semiconductor power device is a transistor; the anode or cathode of the semiconductor power device, where the semiconductor power device is a diode.
10. The semiconductor cooling arrangement according to claim 8, wherein the semiconductor die is sintered to the heatsink.
11. The semiconductor cooling arrangement according to claim 10, wherein the heatsink comprises a silver layer, and the semiconductor die is sintered to the silver layer.
12. The semiconductor cooling arrangement according to claim 8, wherein the heatsink comprises a recess, the semiconductor die is bonded to the heatsink within that recess, and the encapsulant fills or partially fills the recess and does not extend beyond the recess.
13. The semiconductor cooling arrangement according to claim 8, wherein the semiconductor assembly comprises a plurality of semiconductor dies, each containing a transistor, and a plurality of respective regions of encapsulant, each region of encapsulant covering a respective semiconductor die and being separated from the other regions of encapsulant.
14. The semiconductor cooling arrangement according to claim 8, wherein the gap between each heatsink and the adjacent baffle in the direction of the outlet is larger than the gap between each heatsink and the other adjacent baffle in the direction of the inlet, other than for heatsink located closest to the outlet, and wherein the though hole of the adjacent baffle in the direction of the inlet is aligned with the encapsulant of each heatsink.
15. The semiconductor cooling arrangement according to claim 14, and comprising a support structure located between each heatsink and the adjacent baffle in the direction of the outlet.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0037] Several proposals will be described herein for improvements relating to cooling a semiconductor assembly, each in their own section—though it will be appreciated that these improvements may be combined in appropriate ways as described in the below description and otherwise, or used separately. For the assistance of the coming description, a base device will first be described, without any of the individual improvements.
[0038]
[0042] The cooling system and semiconductor assemblies together form a semiconductor cooling arrangement.
[0043] The switching device controls the flow of power from a DC high voltage power supply 131 to a motor 132, via conversion to 3 phase AC power 133.
[0044]
[0045]
[0046] Each baffle 320 has a plurality of through-holes 321, positioned such that coolant flowing through those through-holes 321 will strike the heatsink as a jet, on regions of the heatsink opposite the mounting location of each semiconductor power device. There may be a set of circular through-holes for each semiconductor power device, as shown in the figure, or other numbers, shapes, and distributions of through-holes. Additional through-holes 322 may be provided to cool further components, e.g. in this case the through-holes 322 are positioned to cool the high voltage connections to the semiconductor power devices.
[0047] Each heatsink 330 has one or more semiconductor power devices mounted to it (on the reverse side, as viewed in the Figure), and a plurality of through-holes 331 surrounding the mounting location of the semiconductor power device, which direct coolant to the next baffle. Each heatsink may have additional through-holes 332 corresponding to the additional through-holes 322 on each baffle.
[0048] As an alternative to through-holes 331, 332, each heatsink may extend only partially across the coolant channel, allowing coolant to flow around the edges of the heatsink.
[0049] The coolant channel 340 encloses the heatsinks 330 and the baffles 320, such that each heatsink and baffle extends across the coolant channel. Coolant provided via the coolant input 310 then flows through each baffle, creating jets on each heatsink and providing cooling, then through the heatsink to the next baffle, mixing turbulently in the space between the heatsink and the baffle (both ensuring mixing of the fluid, and providing additional cooling to the semiconductor power device package). While the figure shows two heatsinks and two baffles, it will be appreciated that this pattern can be repeated for any number of heatsinks and baffles, and similarly that each heatsink may have mounting locations for any number of semiconductor power devices.
[0050] The coolant provided to the coolant input 310 is a coolant with very low electrical conductivity, e.g. a dielectric coolant. Optionally, additional flow guides (not shown) may be provided between baffles 320 and heatsinks 330 to direct fluid flow between the respective through-holes.
[0051]
[0052] 1. Integrated Baffle and PCB
[0053] a. Control Electronics on Baffle Assembly
[0054] A major disadvantage of existing designs is that the cooling required to maintain appropriate temperature on high power, high speed switches or other semiconductor power devices takes up significant space, and this results in the semiconductor power devices being further away from the motherboard. This increased distance reduces the efficiency of the switching control and power delivery circuitry, resulting in greater heat generation and greater electromagnetic interference from the switching device as a whole.
[0055]
[0056]
[0057] In general, the PCB baffle may contain circuitry for: [0058] Isolation of high voltage and low voltage components, [0059] Logic, [0060] Local gate buffering; [0061] Resistances or impedances required for gate control; [0062] Local current balancing; [0063] Miller clamping; [0064] Fast overcurrent protection.
[0065] Including the gate resistors for a transistor on the PCB baffle provides a significant advantage to efficiency. Further advantages are provided by the inclusion on the PCB baffle of Miller clamps, gate buffers, and buffer caps. Other components listed above are advantageous to include, but to a lesser extent.
[0066] Components on the PCB may include simple electronic components (resistors, capacitors, inductors, etc), integrated circuits (including application specific integrated circuits, ASICs), terminals or other attachment points 1103 for connection to the semiconductor power devices and terminals or other attachment points 1104 for connection to the motherboard.
[0067] When using a PCB baffle, electrical contact between the PCB and the gate may be made across the coolant chamber formed between the PCB and the heatsink. Similarly, connection may be made across the coolant chamber between the PCB and the semiconductor power device for temperature sensing or similar.
[0068] The PCB baffle may be connected electrically to the semiconductor power devices on its downflow side, on its upflow side, or on both sides. The PCB baffle may be connected through the encapsulant, or vias through the heatsink may be provided for electrical connections to the PCB baffle if it is on the side of the heatsink opposite the semiconductor power device.
[0069] In general, where another section of this document refers to providing through-holes in a baffle, or other structural features of a baffle, these may be applied to the PCB baffle with appropriate routing of the electronics on the PCB.
[0070] 2. Die on Heatsink
[0071] a. Direct Die Bond
[0072] An issue with the package design shown in
[0073] An alternative arrangement is shown in
[0074] PCB elements may be provided for the electrical connections, e.g. to provide structural stability compared to bare copper, or to separate them from the heatsink. The electrical connections may be insulated from the heatsink by providing a gap underneath them which the encapsulant will fill. Further connections, e.g. a thermally conductive connection for use with a temperature sensor, may be provided.
[0075] The structure of the heatsink surrounding the die may be any desired structure—e.g. equivalent to those described with reference to
[0076] The process of assembling the assembly is summarised below: [0077] 1. The die 502 is bonded to the heatsink 501. [0078] 2. Electrical connections 503 are connected to the die 502. [0079] 3. Encapsulant 504 is applied to encapsulate the die.
[0080] The die may be bonded to the heatsink by sintering. The sintering may be performed by applying a layer of a fusible/sinterable, generally high thermally conductive material (e.g. silver, copper, nickel, gold, or a solder) to the heatsink, and then sintering the die to that layer. The layer may be applied in, for example, tape/film, powder or paste formats, if applied as a separate material, or can be applied as a wafer backside coating. Alternatively, the die may be bonded to the heatsink by soldering or the use of an adhesive.
[0081] Applying the encapsulant may comprise applying a barrier around the die to define the extent of the encapsulant, and then filling the region within that barrier with encapsulant. The barrier may be removable, or may be allowed to remain attached to the heatsink.
[0082] The connections 503 will also act to bring heat out of the die through the encapsulant, aiding the heatsink 501 in cooling the die, as the encapsulant will generally be less thermally conductive than connections 503 or heatsink 501.
[0083] b. “Bathtub” Heatsink Structure
[0084]
[0085] The process of assembling the assembly using the bathtub heatsink structure is shown in
[0086] In step 710, the heatsink 701 is prepared for bonding with the semiconductor power device die 702. As an example, this may comprise applying a patch 711 for bonding of the semiconductor power device die within the recess 705.
[0087] In step 720, the semiconductor power device die 702 is bonded to the heatsink 701, e.g. by sintering. If PCB elements 721 are used for any of the electrical inputs for the die, then these are also bonded to the PCB.
[0088] In steps 730 and 740, electrical connections 703 are attached to the semiconductor power device die 702 and PCB element 721, so that these can be accessed after encapsulation.
[0089] In step 750, encapsulant 704, e.g. epoxy, is provided within the recess. The encapsulant may fill the recess, i.e. being flush with the heatsink around the recess, or it may only partially fill the recess to a depth sufficient to cover the die.
[0090] In contrast to the method described for a flat heatsink in the previous section, no barrier is required to contain the encapsulant when it is applied, which simplifies manufacture of the assembly and reduces the possibility for encapsulant leaking beyond the desired region.
[0091]
[0092] The heatsink 701 may comprised protrusions within the recess to aid in the alignment of the die and/or any PCB elements.
[0093] 3. Improved Heatsink Structure
[0094] a. Baffle-Heatsink Assembly with Integrated Fluid Guidance on Heatsink
[0095]
[0096] The arrangement of raised features 810 is suitable for a baffle which causes jets to impact within the area of the “snowflake”. Alternative patterns of raised features may be used, and these may be optimised for particular arrangements of jets from the baffle (i.e. through-holes on the baffle) or through-holes on the heatsink. In general, the features are arranged to promote flow from the jet impact region to the through-holes on the heatsink. Otherwise, impinged fluid from the jet can prevent additional fluid from the jet from hitting the surface.
[0097] b. Support Structure Connecting Baffle and Heatsink
[0098]
[0099] In the example shown in
[0100] The support structure may also comprise a plurality of channels 903 for the electrical connections to the semiconductor power device to pass through. The channels may extend over the heatsink to the semiconductor power device, allowing the electrical connection(s) to be easily isolated from the heatsink. The channels may each include a through-hole 904 allowing fluid flow through the additional through-holes on the heatsink (e.g. as in
[0101] c. Alternative Baffle Hole Arrangements
[0102]
[0103] 4. Additional Combinations and Synergies
[0104] a. Manufacturing Method for Heatsinks
[0105] Heatsinks according to the general disclosure at the start of the description, having a recess as described in section 2b, and/or having integrated fluid guidance as described in section 3a may be easily manufactured by stamping. In particular, by providing appropriate stamping dies, through-holes may be provided around the bonding location for the semiconductor power device, the recess may be formed, and/or the protrusions for integrated fluid guidance may be formed. In addition, the stamping method allows control of the thickness of the heatsink in specific areas, giving a large degree of control of the thermal properties while still allowing high-volume manufacturing to be performed easily.
[0106] b. Connecting “Die on Heatsink” to “PCB Baffle”
[0107] Where the die is directly bonded to the heatsink (as in section 2a), and the baffle is provided as a PCB with control electronics included (as in section 1a), connection may be made between the die and the PCB as necessary by providing electrical connections which stick up from the encapsulant and protrude towards the baffle. This is of particular use for the electrical connection to the gate of the transistor (which will generally be controlled by control circuitry on the PCB) and for temperature sensing (either by connection to a temperature sensor within the encapsulant, or by providing a thermally conductive protrusion which can be used to determine the temperature with sensors on the PCB).