Solder alloy for power devices and solder joint having a high current density

Abstract

A solder joint which is used in power devices and the like and which can withstand a high current density without developing electromigration is formed of a Sn—Ag—Bi—In based alloy. The solder joint is formed of a solder alloy consisting essentially of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, and a remainder of Sn. The solder alloy may further contain at least one of Ni, Co, and Fe.

Claims

1. A process for preventing electromigration in a solder joint in which a current with a current density of 5-100 kA/cm.sup.2 flows through at least a portion thereof, comprising: providing a solder joint between an electronic part and a Cu land or Ni land of a printed circuit board; and applying the current having the current density of 5-100 kA/cm.sup.2 through at least the portion of the solder joint, wherein the solder joint is formed of a solder alloy consisting of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, optionally at least one element selected from 0.05-0.3 mass % of Ni and 0.01-0.32 mass % of Co, and a remainder of Sn, and wherein a reaction layer comprised of an intermetallic compound of (CuNi).sub.6(SnIn).sub.5 or (CuCo).sub.6(SnIn).sub.5 is formed between the solder alloy and the land, so that electromigration is prevented under a current density of 5-100 kA/cm.sup.2.

2. The process for preventing electromigration in a solder joint according to claim 1, wherein a content of Ag in the solder alloy is 2.5-4 mass %.

3. The process for preventing electromigration in a solder joint according to claim 1, wherein a content of Bi in the solder alloy is 2-3 mass %.

4. The process for preventing electromigration in a solder joint according to claim 1, wherein a content of In in the solder alloy is 3-4 mass %.

5. The process for preventing electromigration in a solder joint according to claim 1, wherein the solder alloy consists of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, 0.05-0.3 mass % of Ni, 0.05-0.32 mass % of Co, and a remainder of Sn.

6. The process for preventing electromigration in a solder joint according to claim 5, wherein the solder alloy consists of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, 0.1-0.3 mass % of Ni, 0.05-0.32 mass % of Co, and a remainder of Sn.

7. The process for preventing electromigration in a solder joint according to claim 1, wherein the reaction layer is comprised of intermetallic compounds of (CuNi).sub.6(SnIn).sub.5 and (CuCo).sub.6(SnIn).sub.5.

8. The process for preventing electromigration in a solder joint according to claim 1, wherein a crystal grain size of the solder joint is at most 50 microns.

9. The process for preventing electromigration in a solder joint according to claim 1, wherein the solder joint is made from a solder paste with reflow soldering.

10. The process for preventing electromigration in a solder joint according to claim 1, wherein during application of the current through the solder joint, transformation of β-Sn into γ-Sn and β-Sn is suppressed for preventing the electromigration.

11. A process for preventing electromigration in a solder joint in which a current with a current density of 5-100 KA/cm.sup.2 flows through at least a portion of the solder joint, comprising: providing the solder joint between an electronic part and a Cu land or Ni land of a printed circuit board; and applying the current having the current density of 5-100 kA/cm.sup.2 through at least the portion of the solder joint, wherein the solder joint is made of a solder alloy consisting of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, optionally containing at least one element selected from 0.01-0.3 mass % Ni, 0.01-0.32 mass % of Co, and 0.01-0.1 mass % of Fe, and a remainder of Sn.

12. The process for preventing electromigration according to claim 11, wherein during application of the current through the solder joint, transformation of β-Sn into γ-Sn and β-Sn is suppressed for preventing the electromigration.

Description

BRIEF EXPLANATION OF THE DRAWINGS

(1) FIGS. 1(a) and 1(b) show a model of a Sn lattice of a conventional example and an example of the present invention, respectively.

(2) FIG. 2 is a schematic view of an IGBT (insulated gate bipolar transistor).

(3) FIG. 3 is an explanatory view showing the state of solder connection in an example of the present invention.

(4) FIG. 4 is an electron photomicrograph showing the state of a copper land before conducting current in an example of the present invention.

(5) FIG. 5 is an electron photomicrograph showing the state of a copper land which had an increase in resistance of 5% after conducting 20 amperes at 125° C. in an example of the present invention.

(6) FIG. 6 is an electron photomicrograph showing the state of a copper land which had an increase in resistance of 10% after conducting 20 amperes at 125° C. in an example of the present invention.

MODES FOR CARRYING OUT THE INVENTION

(7) The present invention is an alloy consisting essentially of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, and a remainder of Sn. The Ag content may be at most 3.2%. The In content may be at most 4.5%.

(8) The above-described alloy may preferably further contain at least one of 0.05-0.2 mass % of Ni, 0.05-0.2 mass % of Co, and 0.02-0.1 mass % of Fe.

(9) A solder joint according to the present invention can be formed from an alloy consisting essentially of 2-4 mass % of Ag, 2-4 mass % of Bi, 2-5 mass % of In, and a remainder of Sn.

(10) An alloy which constitutes the above-described joint may preferably further contain at least one of 0.05-0.2 mass % of Ni, 0.05-0.2 mass % of Co, and 0.02-0.1 mass % of Fe.

(11) A solder joint according to the present invention is not limited to use with specific electronic devices, but it is particularly effective when it is used with electronic devices which consume a large amount of electric power such as power transistors since it can prevent electromigration.

(12) A solder joint according to the present invention can be formed in various shapes. For example, inside a power device, methods such as wire bonding or flip clip bonding by reflow soldering using preforms, solder balls, or solder paste are conceivable.

(13) A solder joint for mounting of a power device on a printed circuit board or mounting a CPU on a printed circuit board may be formed by connecting a lead or an electrode of an electronic device by flow soldering. Alternatively it can be formed by reflow soldering of solder paste, solder balls, or various preforms. In addition, a solder joint according to the present invention may be formed by manual soldering. The method of soldering is determined by whether the power device is a discrete type or a surface mounted type.

(14) The reasons for limits on the range of the components of the composition in the above-described alloy are as follows.

(15) Improvement of Electromigration in a Sn—Ag—Bi—In Alloy:

(16) The Ag content is determined from the standpoints of the melting temperature and resistance to thermal fatigue of the solder. If the Ag content is lower than 2%, thermal fatigue properties of the solder worsen. On the other, if it exceeds 4%, its liquidus temperature increases, so the number of voids increases and the quality of a solder joint decreases. Accordingly, the Ag content in the present invention is at least 2 mass % and at most 4 mass %.

(17) In particular, when forming bumps using solder balls, coarse Ag.sub.3Sn compound of about the same size as the diameter of the solder balls crystallizes out at the time of soldering, and at the time of subsequent mounting on a mother board or flip chip mounting, such coarse compound crystallizes and become the cause of soldering defects. As the added amount of Ag in the present invention increases, crystallization of coarse Ag.sub.3Sn gradually becomes marked. In order to avoid this problem, an Ag content of at most 3.5% is better, and in order to decrease crystallization of primary crystals and improve the reliability of a solder joint, an Ag content of at least 2.5% is preferred. Therefore, a more preferred Ag content is at least 2.5 mass % and at most 3.5 mass %.

(18) Bi forms a solid solution with a Sn matrix and suppresses the diffusion of Cu in the Sn matrix. Bi forms a solid solution in the Sn matrix, and it imparts strains to the lattice and suppresses diffusion of Cu atoms in the matrix.

(19) Electromigration easily develops at a high temperature of around 150° C. Accordingly, it is important to maintain a state of solid solution hardening which occurs due to the addition of Bi at such a high temperature. In general, a state of solid solution hardening disappears if a solder joint is heated to a high temperature of 150° C., and the solubility limit of Bi in Sn becomes at least 10% at 150° C. Therefore, when Bi is added, it is thought that diffusion of Bi atoms in a Sn matrix becomes violent and Sn lattice strains are alleviated. It was found that when Bi is added in an amount of at least 2%, solid solution hardening is maintained even at a high temperature of at least 150° C., and the presence of strains in the Sn lattice caused by continuing solid solution hardening suppresses the diffusion of Cu atoms. The tensile strength at 160° C. is 19 MPa and 28 MPa for SnAg0.5Cu and Sn3Ag0.8Cu3Bi respectively, and at 200° C., it is 13 MPa and 20 MPa, respectively. If the Bi content is less than 2 mass %, solid solution hardening is not exhibited, and strains do not appear in the Sn lattice. However, if an excessive amount of Bi is added, in addition to the above-described decrease of the solidus temperature, a low melting point phase (low-temperature phase) which melts at 139° C. crystallizes out due to segregation at the time of soldering. Since a solder joint is sometimes heated to a high temperature of 150° C., the formation of a liquid phase at that time due to the presence of such a low-temperature phase in a solder joint cannot be avoided. As a result, due to an increase in stress load caused by thermal fatigue, cracks suddenly develop. Therefore, the added amount of Bi is made at most 4%. The added amount of Bi in the present invention is at least 2 mass % and at most 4 mass %.

(20) As an example, in the case of a Sn3.0Ag0.8Cu5Bi solder alloy, Bi crystallizes over the entirety of the fillet of a solder joint due to segregation. When 4% of Bi is added, Bi crystallizes with a size of around 10 μm and is dispersed over the entirety of a fillet, but the area where Bi is concentrated does not pass through the entire fillet. However, if Bi is added in an amount of at least 7%, the area where Bi segregates passes through the fillet. In this case, if a solder joint is rapidly exposed to a high temperature of 150° C., a liquid phase portion passes through the fillet, so even if diffusion of Cu atoms is suppressed and electromigration can be prevented, resistance to thermal fatigue is markedly reduced. Therefore, such a high Bi content is not suitable for a solder joint requiring high reliability even under high currents.

(21) The added amount of Bi is limited to at most 4% and preferably to at most 3%. If the Bi content is 3% or below, segregation of Bi is ascertained in several locations in a fillet, and even if the portions where Bi segregates remelt at 139° C., progression of cracks can be prevented. The tendency of Bi to segregate is not changed by the addition of In.

(22) In the same manner as Bi, In (indium) forms a solid solution with Sn and imparts lattice strains to the Sn matrix. Solid solution hardening due to the addition of In is maintained even at a high temperature of 160° C. Although its effect is smaller than Bi, In can also suppress diffusion of Cu in a Sn matrix.

(23) When 2-5% of In is added to a Sn alloy, primary crystals become γ-SnIn rather than β-Sn, and the crystallized γ-SnIn phase becomes a β-Sn phase due to solid phase transformation at 100° C. or below. With a β-Sn phase which underwent solid phase transformation in this manner, crystal grains are refined so that their size becomes at most 50 μm and the crystal orientation becomes random. With a β-Sn phase, the speed of diffusion of Cu atoms in the c-axis direction becomes fast. If the crystal grains in a solder joint are large, there is a high probability of the direction of current coinciding with the direction of the c-axis. Furthermore, because the crystal grains are large and the above-described probability is high, the distance over which Cu atoms can diffuse becomes long, and the amount of Cu which diffuses into solder from Cu electrodes increases. As a result, open circuits in Cu electrodes due to electromigration occur extremely easily in a short period of time. However, when crystal grains are small, even if the direction of current coincides with the c-axis of some of the crystal grains, the crystal grains themselves are small, and the total amount of Cu which moves from Cu electrodes into the solder is suppressed. As a result, the life span until conduction paths are broken by electromigration becomes long.

(24) If the added amount of In is smaller than 2%, there is almost no crystallization of γ-SnIn phase as primary crystals. From the initial stage of solidification, a β-Sn phase crystallizes and continuously grows. Accordingly, a phase transformation due to a solid phase reaction does not develops, and the direction of current coincides with the c-axis direction of coarse β-Sn crystals. Therefore, the diffusion of Cu atoms in a solder joint increases and open circuits occur in a short length of time.

(25) On the other hand, if In is added in excess of 5%, a β-Sn phase is formed at room temperature, but at 150° C., the ratio of β-Sn phase to γ-SnIn becomes approximately 7:3. This means that a solder joint undergoes a phase transformation during use. If a phase transformation from β-Sn to β-Sn and γ-SnIn occurs during use, a solder joint deforms and short circuits occur between adjoining electrodes. Therefore, the In content is limited to at most 5%. The In content in the present invention is at least 2 mass % and at most 5 mass %. Preferably it is at least 3 mass % and at most 4 mass %.

(26) The addition of In can directly suppress electromigration. Normally, intermetallic compounds such as Cu6Sn5 and Cu3Sn are formed in the interface between a Cu electrode and a solder alloy. The movement of Cu atoms in these intermetallic compound phases (also referred to below as reaction phases) is rapid. Due to electromigration, the Cu atoms in Cu6Sn5 diffuse into the Sn matrix, thereby causing the intermetallic compound phases to easily disappear. After the intermetallic compound phases disappear, the Cu electrode and the Sn matrix directly contact each other, and diffusion of Cu is further accelerated so that an open circuit occurs in a short length of time. On the other hand, if the intermetallic compound phase is made Cu6(SnIn)5, the diffusion of Cu atoms caused by current can be suppressed. As a result, disappearance of intermetallic compound phases by electromigration can be effectively prevented. The In content is at least 1% and preferably at least 2%. With a solder having an In content of at most 5%, the In content in a reaction phase with a Cu electrode becomes at most 7%. In other words, the In content of a Cu6(SnIn)5 reaction phase is preferably at most 7%.

(27) Ni: The addition of 0.01-0.3% of Ni also has the effect of suppressing electromigration. The addition of Ni to a Sn—Ag—Bi—In alloy can change a reaction phase from Cu6(SnIn)5 to (CuNi)6(SnIn)5 and can suppress diffusion of Cu. If the added amount of Ni is smaller than 0.01%, a portion of a Cu6(SnIn)5 reaction phase may remain unchanged. If a region in which the current density becomes high coincides with the remaining Cu6(SnIn)5 reaction phase, the diffusion of Cu is accelerated and ultimately an open circuit occurs in a short period of time. In this case, the added amount of Ni is preferably at least 0.1%. When carrying out reflow soldering, the heating temperature at the time of reflow is made at most 260° C. Normally, this temperature is at most 240° C. If Ni is added in excess of 0.1%, the liquidus temperature exceeds 240° C. At 240° C., a small amount of Ni3(SnIn)4 remains but it has almost no effect on soldering. However, if the Ni content exceeds 0.3% and in some cases if it exceeds 0.2%, it produces an adverse effect such as an increase in the amount of voids.

(28) However, because Ni3(SnIn)4 remains, Cu can be effectively prevented from dissolving into solder at the time of reflow. As a result, the occurrence of open circuits is prevented and the working life of a joint can be extended. The preferred added amount of Ni is 0.01-0.2% and more preferably 0.1-0.15%.

(29) Co: The addition of 0.01-0.3% of Co also has the effect of suppressing electromigration. Adding Co to a Sn—Ag—Bi—In alloy can change the reaction phase from Cu6(SnIn)5 to (CuCo)6(SnIn)5 and can suppress diffusion of Cu. If the added amount of Co is smaller than 0.01% and sometimes if it is smaller than 0.02%, a portion of the Cu6(SnIn)5 reaction phase remains unchanged. If a region having a high current density coincides with the remaining Cu6(SnIn)5 reaction phase, diffusion of Cu is accelerated in this region, and eventually an open circuit occurs in a short period of time. The added amount of Co is preferably at least 0.1%. When carrying out reflow soldering, the heating temperature at the time of reflow is made at most 260° C. Normally, this temperature is at most 240° C. If Co is added in excess of 0.05%, the liquidus temperature exceeds 240° C. At 240° C., a small amount of Co(SnIn)2 remains, but it has almost no effect on soldering. Particularly if the Co content exceeds 0.3% and sometimes if it exceeds 0.2%, Co produces an adverse effect such as an increase in the amount of voids. However, Co(SnIn)2 remains, so Cu can be effectively prevented from dissolving into solder at the time of reflow, and as a result, the occurrence of open circuits is prevented and the working life of a joint can be extended. The added amount of Co is preferably 0.05-0.2% and more preferably 0.05-0.15%.

(30) The addition of Co also makes the surface of a (CuCo)6(SnIn)5 reaction phase smooth, and it forms a reaction layer with a uniform thickness. If the added amount of Co is less than 0.01%, severe surface irregularities form in the (CuCo)6(SnIn)5 reaction phase, and if current concentrates in portions where the reaction layer is thin, the reaction phase easily disappears by electromigration. After the reaction phase disappears, Cu electrodes and solder directly contact each other, and diffusion of Cu from the Cu electrodes into solder is accelerated, causing open circuits to occur in short period of time.

(31) The addition of Co can also refine β-Sn crystal grains in the vicinity of the reaction phase to 30 μm or smaller, so the working life until fracture occurs due to electromigration can be extended.

(32) A small amount of Fe may be added to a Sn—Ag—Bi—In alloy according to the present invention. When Fe is added, its content is preferably 0.01-0.1%.

(33) Sn: Remainder

(34) Sn constitutes substantially the remainder of the solder alloy. There is no particular upper limit on the Sn content but generally it is 94 mass %.

(35) A solder alloy used in a solder joint according to the present invention can be manufactured by usual methods for manufacturing a solder alloy, and the solder alloy at the time of manufacture can be formed into a shape suitable for the soldering method used to form a solder joint. For example, a solder alloy according to the present invention may be used in the form of ingots, bars, rods, solder balls, solder powder, or solder wire. In addition, it may be used after being formed into various types of preforms such as pellets or disks.

(36) When the solder alloy is used as a solder paste, a solder alloy powder is mixed with a suitable flux in a conventional manner.

EXAMPLES

(37) In order to investigate the effects of a solder joint according to the present invention, solder joint according to the present invention and conventional solder joint were prepared by soldering a Cu component to lands by the reflow soldering method using solder paste, and the properties of the resulting solder joints were measured. Solder powders having the solder alloy compositions shown in Table 1 were admixed with flux to prepare solder pastes.

(38) As shown in FIG. 3, a solder paste was printed on copper electrodes of a printed circuit board 31 using a stencil, for example, and then a rectangular Cu plate 33 was placed atop the paste. The printed circuit board 31 and the copper plate 33 were heated in a reflow furnace to melt the solder paste, and then the resulting assembly was cooled to obtain solder joints 34 connecting the Cu plate 33 to lands 32 of the printed circuit board 31. FIG. 3 schematically shows the state of the printed circuit board 31 at this time.

(39) A heat cycle test was carried out in the following manner.

(40) A six-layer FR4 printed circuit board with a thickness of 1.6 mm was used. A solder paste to be tested was printed in a soldering pattern (1.6×1.2 mm) to a thickness of 150 μm with the same opening size as the electrodes of the printed circuit board. Ceramic chip resistors measuring 3.2×1.6×0.6 mm were mounted on the solder paste using a Model SMT-2000V automatic part mounter manufactured by Suzuki Co., Ltd., and then soldering was carried out using a Model SNR-825 reflow oven manufactured by Senju Metal Industry Co., Ltd. with a peak temperature of 240° C. and an oxygen concentration of at most 500 ppm.

(41) To test for thermal fatigue, a Model TSA-101 thermal shock tester of the air circulation type manufactured by Espec Corporation was used. The above soldered assembly was held for thirty minutes at each of −55° C. and +125° C., and exposure to room temperature was zero minutes. Every 500 cycles, the shear strength of 10-15 joints of each chip part was measured using a Model STR-1000 shear tester manufactured by Rheska Corporation. The size of the shear tool was 3 mm wide×2 mm thick and the speed was 5 mm per minute.

(42) In order to ascertain the life span of solder joints, the minimum bonding strength of a 3216-size part was made 15N. The cumulative number of solder joints having a strength of 15N or less was calculated every 500 cycles. Failure was made the point at which the cumulative number exceeded 10%, and the previous 500 cycles was made the life span of the solder joints. The results are shown in Table 1.

(43) An electromigration test was carried out in the following manner.

(44) When determining resistance to electromigration, a copper plate 33 and a land 32 of a printed circuit board 31 were connected to a suitable power supply 35 as shown in FIG. 3, and a current was passed between the Cu plate 33 and the land 32 of the printed circuit board 31. This current was supplied until the electrical resistance increased by 5% or 10% while maintaining the printed circuit board 31 at 125° C. in air. After conduction was completed, the cross section of the solder joint 34 near the bottom of fillets of the solder joint 34 was observed with an electron microscope. The reason why the fillet region was observed is because this is the location where the current density is thought to be highest.

(45) In this example, solder alloys having the compositions shown in Table 1 were used. The results are also shown in Table 1.

(46) Finally, the solder fillets of a printed circuit board 1 after soldering in a reflow furnace set to a peak reflow temperature of 240° C. were checked with an X-ray transmission apparatus to investigate voids in the solder joints. Compositions for which voids constituted at least 20% of the surface area of the cross section of the joints were evaluated as × (poor), those for which voids constituted 10-20% of the surface area were evaluated as Δ (fair), and those for which voids constituted less than 10% of the surface area were evaluated as ∘ (good). The results are shown in Table 1.

(47) TABLE-US-00001 TABLE 1 Temp. cycle Life of joint (h) % Defects* Alloy composition (mass %) test 10% 5% after 500 h Sn Ag Bi In Ni Co Fe (cycles) increase increase N = 15 Voids EXAMPLE 1 rem 2 2 2 2000 400 — 13 — 2 rem 2 3 4 2000 400 — 7 — 3 rem 2.5 3 4 2500 400 — 0 — 4 rem 3 3 4 3500 400 200 0 — 5 rem 3.2 3 4 3500 400 — 0 — 6 rem 4 3 4 3000 400 — 0 — 7 rem 3 2 4 3000 400 — 7 — 8 rem 3 2.5 4 3500 400 — 7 — 9 rem 3 3 4 4000 400 — 0 — 10 rem 3 3.5 4 4000 400 — 0 — 11 rem 3 4 4 3500 400 — 0 — 12 rem 3 4 5 3000 400 — 13 — 13 rem 3 3 2 2500 400 — 7 — 14 rem 3 3 3 3500 400 — 0 — 15 rem 3 3 3.5 4000 400 — 0 — 16 rem 3 3 4.5 3500 400 — 0 — 17 rem 3 3 5 2500 400 — 7 — 18 rem 3 3 4 0.02 3500 400 200 — ∘ 19 rem 3 3 4 0.05 3500 450 250 — ∘ 20 rem 3 3 4 0.1 3500 ≥500 300 — ∘ 21 rem 3 3 4 0.15 3500 ≥500 350 — ∘ 22 rem 3 3 4 0.2 3500 ≥500 350 — Δ 23 rem 3 3 4 0.3 3500 ≥500 350 — x 24 rem 3 3 4 0.02 3500 400 200 — ∘ 25 rem 3 3 4 0.05 3500 450 250 — ∘ 26 rem 3 3 4 0.1 3500 ≥500 300 — ∘ 27 rem 3 3 4 0.15 3500 ≥500 350 — ∘ 28 rem 3 3 4 0.2 3500 ≥500 350 — Δ 29 rem 3 3 4 0.3 3500 ≥500 350 — x 30 rem 3 3 4 0.02 3500 ≥500 200 — ∘ 31 rem 3 3 4 0.1 3500 ≥500 400 — Δ 32 rem 3 3 4 0.05 0.05 3500 ≥500 400 — ∘ 33 rem 3 3 4 0.1 0.1 3500 ≥500 ≥500.sup.  — ∘ 34 rem 3 3 4 0.1 0.05 3500 ≥500 ≥500.sup.  — ∘ 35 rem 3 3 4 0.1 0.05 3500 ≥500 ≥500.sup.  — ∘ 36 rem 3 4 3 4000 400 — 0 — 37 rem 3 4 2 2500 400 — 7 — 38 rem 3 2.5 2.5 2000 400 — 7 — 39 rem 3 2 3 2000 400 — 7 — 40 rem 3 2.5 4.5 2500 400 — 7 — 41 rem 3 2 5 2500 400 — 13 — COMPAR 1 rem 1.5 3 4 1500 400 — 7 — 2 rem 3 1.5 1.5 1000 200 — 33 — 3 rem 3 1.5 4 1500 300 — 20 — 4 rem 3 7 4 1500 100 — 27 — 5 rem 3 7 7 500 100 — 33 — 6 rem 3 3 1.5 2000 300 — 20 — 7 rem 3 3 7 500 100 — 20 — 8 rem 3 5 4 3000 400 — 20 — 9 rem 4 4 6 500 300 — 20 — 10 rem 3 4 1.5 2000 300 — 20 — *Defects = 20% increase in resistance

(48) FIG. 4 is an electron photomicrograph showing the state of a copper land before passage of current in an example of the present invention.

(49) FIG. 5 is an electron photomicrograph showing the state of a copper land when the resistance increased by 5% after carrying a current of 20 amperes at 125° C. in an example of the present invention.

(50) FIG. 6 is an electron photomicrograph showing the state of a copper land when the resistance increased by 10% after carrying a current of 20 amperes at 125° C. in an example of the present invention.

(51) Comparing FIG. 5 and FIG. 6 with FIG. 4 before the conduction test, the Cu lands of the printed circuit board became significantly thinner due to electromigration. From FIG. 5 and FIG. 6, it can be seen that fracture occurred in the portion of a solder joint shown as a black region. In this region, the solder joint and the Cu land of the printed circuit board were no longer connected with each other.

(52) It was confirmed that a Sn—Ag—Bi—In alloy used in a solder joint according to the present invention had far superior fatigue resistance compared to either a Sn—Ag—Cu alloy or a Sn—Cu alloy.

(53) From the above-described test results, it can be seen that there is substantially no occurrence of electromigration even if a solder joint according to the present invention is used for long periods at a current density in the range of 5-100 kA/cm.sup.2. At the same time, the solder joint has excellent heat cycle resistance and fatigue resistance. Accordingly, a solder joint according to the present invention is particularly suitable for electronic equipment operating with a high current producing a high current density such as power transistors and other electrical equipment.