DIRECT BONDING METHODS AND STRUCTURES

Abstract

A bonding method can include activating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element. The bonding method can include, after the activating, providing a protective layer over the activated first bonding layer of the first element.

Claims

1. A bonding method comprising: activating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; and after the activating, providing a protective layer over the activated first bonding layer of the first element.

2. The bonding method of claim 1, wherein the protective layer comprises an organic layer.

3. The bonding method of claim 2, wherein the protective layer comprises a photoresist.

4. The bonding method of claim 1, further comprising removing the protective layer.

5. The bonding method of claim 4, wherein the first element is in the form of wafer before providing the protective layer, the method further comprising, before removing the protective layer, singulating the first element in wafer form to form a plurality of singulated first elements.

6. The bonding method of claim 4, further comprising, after removing the protective layer, directly bonding the first bonding layer of the first element to the second bonding layer of the second element without an intervening adhesive.

7. The bonding method of claim 6, further comprising rinsing at least one of the first and second bonding layers with deionized water (DIW) before the directly bonding.

8. The bonding method of claim 6, wherein, before the directly bonding, the first element is in the form of a singulated integrated device die and the second element is in the form of a wafer.

9. The bonding method of claim 6, wherein the first bonding layer comprises a first plurality of conductive contact pads and a first non-conductive bonding region, wherein the second bonding layer comprises a second plurality of conductive contact pads and a second non-conductive bonding region, and wherein directly bonding comprise directly bonding the first and second pluralities of conductive contact pads to one another without an adhesive and directly bonding the first and second non-conductive bonding regions to one another without an adhesive.

10. The bonding method of claim 9, wherein the conductive contact pads comprise copper or copper alloy.

11. The bonding method of claim 9, wherein the non-conductive bonding region comprises a silicon-containing dielectric layer.

12. The bonding method of claim 9, wherein the non-conductive bonding region comprises a non-silicon dielectric layer that does not include silicon.

13. The bonding method of claim 9, further comprising activating the second bonding layer before directly bonding.

14. The bonding method of claim 6, wherein activating the first bonding layer and providing the protective layer are performed in a first facility, and wherein directly bonding is performed at a second facility that is in a different location from the first facility.

15. The bonding method of claim 6, wherein directly bonding is performed more than twenty-four (24) hours after activating the first bonding layer.

16. The bonding method of claim 1, wherein activating the first bonding layer comprises plasma activating the first bonding layer.

17. The bonding method of claim 16, wherein plasma activating the first bonding layer comprises exposing the first bonding layer to a nitrogen-containing plasma.

18. The bonding method of claim 17, wherein the first bonding layer comprises silicon oxide or silicon carbonitride.

19. The bonding method of claim 16, wherein plasma activating the first bonding layer comprises exposing the first bonding layer to an oxygen-containing plasma.

20. The bonding method of claim 19, wherein the first bonding layer comprises silicon nitride or silicon carbonitride.

21. The bonding method of claim 1, wherein providing the protective layer comprises depositing the protective layer over the activated bonding layer of the first element.

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38. A bonding method comprising: plasma treating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; and after the plasma treatment, providing a protective layer over the treated first bonding layer of the first element.

39. The bonding method of claim 38, further comprising removing the protective layer from the treated first bonding layer, and, after the removing, directly bonding the treated first bonding layer to the second bonding layer of the second element without an intervening adhesive.

40. A bonding method comprising: plasma treating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; after the plasma treatment, providing a protective layer over the treated first bonding layer of the first element; singulating the plasma treated first element and the protective layer into a plurality of singulated first elements; cleaning the protective layer from the first bonding layer of at least one singulated first element of the plurality of singulated first elements; and bonding the at least one cleaned singulated first element to the second bonding layer of the second element.

41. The bonding method of claim 40, wherein the plasma treatment comprises a nitrogen containing plasma.

42. The bonding method of claim 40, wherein the plasma treatment comprises an oxygen containing plasma.

43. The bonding method of claim 40, wherein the plasma treatment comprises treating the first bonding layer with more than one type of plasma.

44. The bonding method of claim 40, further comprising rinsing the plasma treated surface with deionized water (DIW) before the bonding.

45. The bonding method of claim 40, further comprising thinning the plasma treated first element before the singulating.

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Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG. 1 is a flow chart illustrating a method for forming a bonded structure.

[0010] FIG. 2A-2B are flow charts illustrating example methods for forming a bonded structure, according to various embodiments.

[0011] FIGS. 3A-3E schematically illustrate the bonding method according to FIG. 2.

[0012] FIG. 4 is a flow chart illustrating a method for forming a bonded structure, according to various embodiments.

DETAILED DESCRIPTION

[0013] Two or more semiconductor elements (such as integrated device dies, wafers, etc.) may be stacked on or bonded to one another to form a bonded structure. Conductive contact pads of one element may be electrically connected to corresponding conductive contact pads of another element. Any suitable number of elements can be stacked in the bonded structure. As used herein, contact pads may include any suitable conductive feature within an element configured to bond (e.g., directly bond without an adhesive) to an opposing conductive feature of another element. For example, in some embodiments, the contact pad(s) may comprise a discrete metallic contact surface formed in a bonding layer of an element. In some embodiments, the contact pad(s) may comprise exposed end(s) of a through-substrate via (TSV) that extends at least partially through an element.

[0014] In some embodiments, the elements are directly bonded to one another without an adhesive. In various embodiments, a dielectric field region (also referred to as a nonconductive bonding region) of a first element (e.g., a first semiconductor device die with active circuitry) can be directly bonded (e.g., using dielectric-to-dielectric bonding techniques) to a corresponding dielectric field region of a second element (e.g., a second semiconductor device die with active circuitry) without an adhesive. For example, dielectric-to-dielectric bonds may be formed without an adhesive using the direct bonding techniques disclosed at least in U.S. Pat. Nos. 9,564,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.

[0015] In various embodiments, hybrid direct bonds can be formed without an intervening adhesive. For example, dielectric bonding surfaces can be polished to a high degree of smoothness. The bonding surfaces can be cleaned and exposed to a plasma and/or etchants to activate the surfaces. In some embodiments, the surfaces can be terminated with a species after activation or during activation (e.g., during the plasma and/or etch processes). Without being limited by theory, in some embodiments, the activation process can be performed to break chemical bonds at the bonding surface, and the termination process can provide additional chemical species at the bonding surface that improves the bonding energy during direct bonding. In some embodiments, the activation and termination are provided in the same step, e.g., a plasma or wet etchant to activate and terminate the surfaces. In other embodiments, the bonding surface can be terminated in a separate treatment to provide the additional species for direct bonding. In various embodiments, the terminating species can comprise nitrogen. Further, in some embodiments, the bonding surfaces can be exposed to fluorine. For example, there may be one or multiple fluorine peaks near layer and/or bonding interfaces. Thus, in the directly bonded structures, the bonding interface between two dielectric materials can comprise a very smooth interface with higher nitrogen content and/or fluorine peaks at the bonding interface. Additional examples of activation and/or termination treatments may be found throughout U.S. Pat. Nos. 9,564,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.

[0016] In various embodiments, conductive contact pads of the first element can be directly bonded to corresponding conductive contact pads of the second element. For example, a hybrid bonding technique can be used to provide conductor-to-conductor direct bonds along a bond interface that includes covalently direct bonded dielectric-to-dielectric surfaces, prepared as described above. In various embodiments, the conductor-to-conductor (e.g., contact pad to contact pad) direct bonds and the dielectric-to-dielectric hybrid bonds can be formed using the direct bonding techniques disclosed at least in U.S. Pat. Nos. 9,716,033 and 9,852,988, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.

[0017] For example, dielectric bonding surfaces can be prepared and directly bonded to one another without an intervening adhesive as explained above. Conductive contact pads (which may be surrounded by nonconductive dielectric field regions) may also directly bond to one another without an intervening adhesive. In some embodiments, the respective contact pads can be recessed below exterior (e.g., upper) surfaces of the dielectric field or nonconductive bonding regions, for example, recessed by less than 20 nm, less than 15 nm, or less than 10 nm, for example, recessed in a range of 2 nm to 20 nm, or in a range of 4 nm to 10 nm. The nonconductive bonding regions can be directly bonded to one another without an adhesive at room temperature in some embodiments and, subsequently, the bonded structure can be annealed. Upon annealing, the contact pads can expand and contact one another to form a metal-to-metal direct bond. Beneficially, the use of Direct Bond Interconnect, or DBI®, techniques can enable high density of pads connected across the direct bond interface (e.g., small or fine pitches for regular arrays). In some embodiments, the contact pads can be arranged in an array having a regular or irregular pitch. In some embodiments, to the extent the contacts are regularly spaced from one other across the element, or across groups within the element, the pitch of the contact pads may be less 40 microns, less than 10 microns, or less that 2 microns. For some embodiments, the ratio of the pitch of the contact pads to a dimension (e.g., a diameter) of the contact pad can be less than 5, less than 3, or less than 2. In various embodiments, the contact pads can comprise copper, although other metals may be suitable.

[0018] In various embodiments, the contact pads can be formed in respective first and second arrays of pads on the first and second elements. If any debris or surface contaminant is present at the surface of the first or second elements, voids may be created at the bond interface, or debris may intervene between opposing contact pads. In addition, reactant byproducts generated during bonding and annealing, e.g. hydrogen and water vapor, may also form voids at the bond interface. These voids may effectively inhibit the joining of particular contact pads in the vicinity, creating openings or other failures in the bond. For example, any void larger than the pad diameter (or pitch) can potentially create an opening and direct bond failure. In some embodiments, depending on the location of the voids, voids that are comparable in size to or smaller than the pad diameter (at least partially located over pad) may be the source of failure in the bonded structure or structures.

[0019] Thus, in direct bonding processes, a first element can be directly bonded to a second element without an intervening adhesive. In some arrangements, the first element can comprise a singulated element, such as a singulated integrated device die. In other arrangements, the first element can comprise a carrier or substrate (e.g., a wafer) that includes a plurality (e.g., tens, hundreds, or more) of device regions that, when singulated, form a plurality of integrated device dies. Similarly, the second element can comprise a singulated element, such as a singulated integrated device die. In other arrangements, the second element can comprise a carrier or substrate (e.g., a wafer).

[0020] FIG. 1 is a flow chart showing an example method 10 of forming a bonded structure. As an example, as shown in the flow chart of FIG. 1, the bonded first element 1 can comprise a singulated device die, and the bonded second element can comprise a host substrate, such as a wafer or carrier. In other arrangements, the second element 2 can comprise a second singulated device die. The first element 1 can be planarized or polished to have a smoothness sufficient for direct bonding. In the illustrated arrangement, the first element 1 may be initially provided in wafer form or as a larger substrate and singulated to form the singulated first element 1. However, the singulation process and/or other processing steps may produce debris that can contaminate the planar bonding surface, which can leave voids and/or defects when two elements 1, 2 are bonded. Accordingly, prior to singulation, in a block 11, a protective layer can be provided over the bonding surface of the first element 1 (e.g., in wafer form) before activation and before direct bonding in order to prevent debris from contaminating the bonding surface of the first element 1. The protective layer can comprise an organic or inorganic layer (e.g., a photoresist) that is deposited (e.g., spin coated onto) the polished bonding surface of the first element 1 in wafer form. Additional details of the protective layer may be found throughout U.S. Pat. No. 10,714,449, the entire contents of which are incorporated by reference herein in their entirety and for all purposes. In a block 12, the wafer containing the first element 1 can be thinned and singulated using any suitable method. In some embodiments, the first element 1 can be thinned prior to singulation. The protective layer over the bonding surface can beneficially protect the bonding surface of the first element 1 from debris generated during singulation.

[0021] As shown in a block 13 of FIG. 1, the protective layer (such as an organic layer) on the singulated first element 1 can be removed from the bonding surface with a cleaning agent, for example with a suitable solvent, such as an alkaline solution or other suitable cleaning agent as recommended by the supplier of the protective layer. The protective layer cleaning agent can be selected such that it does not substantially roughen the smooth bonding surface of the dielectric bonding layer and does not substantially etch the metal of the contact pad to increase the recess of the pad metal. An excessive pad recess may form a recess that is too deep, which may prevent (or reduce the strength of) pad-to-pad bonding at the appropriate annealing conditions (e.g., annealing temperature and times). For example, the annealing temperature may vary in a range of 150° C. to 350° C. or higher. The annealing times may range between 5 minutes to over 120 minutes. The cleaning agent can be applied by a fan spray of the liquid cleaning agent or other known methods. For example, the cleaned bonding surface of the first element 1 can be ashed (e.g., using an oxygen plasma) and cleaned with deionized water (DIW). The ashing step can remove any residual organic material from the protective layer. In some embodiments, the cleaned and singulated first element can be activated before direct bonding. In other embodiments, however, the cleaned and singulated first element may not be activated before direct bonding.

[0022] In a block 14, the second element 2 can also be cleaned with DIW after planarization or polishing. In a block 15, the bonding surface can also be wet and/or dry cleaned, e.g., the bonding surface of the second element 2 can be ashed (e.g., using an oxygen plasma) to remove any organic material and cleaned with DIW. Further, as shown in a block 16 of FIG. 1, the bonding surface of the second element 2 can be activated. In various embodiments, the activation can comprise exposing the bonding surface of the second element 2 to a nitrogen plasma. In other embodiments, the activation can comprise exposing the bonding surface of the second element 2 to an oxygen plasma. As explained above, the activation process (which may also terminate the bonding surface) can break bonds at the bonding surface and replace the broken bonds with chemical species that enhance the bonding energy of the direct bond. As shown in block 16 of FIG. 1, the activated surface can be cleaned with DIW, which may serve to wash any residue away before bonding without degrading the bonding surface of the second element.

[0023] In a block 17, the first and second elements 1, 2 can be brought together to directly contact one another at room temperature. For example, in the illustrated arrangement, the singulated first element 1 in the form of a singulated device die can be directly bonded to the second element 2 in wafer form. In other arrangements, the singulated first element 1 can be directly bonded to a singulated second element 2 (e.g, such that both elements 1, 2 are in the form of a device die). In still other arrangements, the first and second elements 1, 2 may be directly bonded in wafer form and subsequently singulated. As explained herein, the nonconductive bonding regions of the first and second elements 1, 2 can spontaneously bond at room temperature when placed in contact without application of external pressure, and without application of a voltage. The bonded structure can be annealed to cause the conductive contact pads to expand and form electrical connections and to increase the bonding energy between the respective bonded nonconductive bonding regions of the first and second elements 1, 2. In the illustrated arrangement, the second element 2 comprises a wafer or other larger carrier substrate, but in other arrangements, the second element 2 can comprise a singulated integrated device die.

[0024] In the bonding arrangement shown in FIG. 1, in some embodiments, only the second element 2 may be activated before direct bonding. As explained in U.S. Pat. No. 10,727,219, which is incorporated by reference herein in its entirety and for all purposes, the bonded strength between the two elements 1, 2 may be sufficiently strong when only one of the two elements 1, 2 is activated before bonding. However, in other arrangements, both the first element 1 and the second element 2 may be activated prior to bonding, or, alternatively, only the first element 1 may be activated before bonding.

[0025] In the arrangement of FIG. 1, the activation of the first element 1 can occur after the protective layer is applied, and after singulation and removal of the protective material. However, if the first die or element 1 is activated in the process of FIG. 1 while the first element 1 is supported by dicing tape, the dicing tape can react with a nitrogen plasma to deposit undesirable byproducts on portions of the first element 1 and/or second element 2 disposed on the dicing tape during the activation step. In some instances, post deionized water (DIW) cleaning of the bonding surfaces of the first elements 1 may not be effective in removing these surface-degrading byproducts from the bonding surface of the first element. Bonding improperly cleaned bonding surfaces typically produces defective bonded region(s) between the bonded elements.

[0026] FIGS. 2A and 3A-3E schematically illustrate a bonding method according to various embodiments. In particular, FIG. 2A schematically illustrates an example process flow for the first and second elements 1, 2. FIG. 3A-3D illustrate the process flow for the first element 1 before direct bonding is performed in FIG. 3E and in block 51 of FIG. 2A. FIG. 3A illustrates a schematic side sectional view of the first element 1. The first or second element 1, 2 can comprise an integrated device die or a wafer. In the step of FIG. 3A, the first element 1 is shown in wafer form. The first element 1 can comprise a base portion 61, which can comprise a semiconductor material, such as silicon. Active devices (and/or passive devices) can be formed in or on the base portion 61. A bonding layer 62 can be provided (e.g., deposited) on the base portion 61. In various embodiments, the bonding layer 62 can comprise a nonconductive bonding region 60 (e.g., a dielectric field region) that includes an inorganic dielectric. For example, in some embodiments, the nonconductive bonding region 60 can comprise silicon oxide, a silicon-containing dielectric layer such as one or more of SiN, SiO.sub.xN.sub.y, silicon carbide, silicon carbonitride or silicon carboboride etc. The nonconductive bonding region 60 may also comprise a non-silicon dielectric layer, for example, ceramic layers, such as alumina or sapphire, zirconia, boron carbide, boron oxide, aluminum nitride, piezoceramics, ferro ceramics, zinc oxide, zirconium dioxide, titanium carbide etc. The bonding layer 60 can further include a plurality of conductive contact pads 63 formed in the nonconductive bonding region (in some embodiments, the contact pads can comprise exposed surfaces of TSVs, as noted above). In various embodiments, the contact pads 63 can comprise copper, copper alloys, or nickel and nickel alloys, although other suitable metals can be used. In a block 41 of FIG. 2 and as shown in FIG. 3A, the bonding layer 62 can comprise a bonding surface 64 that can be cleaned and polished or planarized (e.g., using chemical mechanical polishing, or CMP) to a very high degree of smoothness. Exposed surfaces (e.g., upper surfaces) of the contact pads 63 may be recessed relative to the exterior bonding surface 64 of the nonconductive bonding region 60. For example, the exposed surfaces of the pads 63 can be recessed relative to the exterior bonding surface 64 of the nonconductive bonding region 60 by less than 20 nm, less than 15 nm, or less than 10 nm, for example, recessed in a range of 2 nm to 20 nm, or in a range of 4 nm to 10 nm.

[0027] Turning to a block 42 of FIG. 2A and to FIG. 3B, the bonding layer 62 can be activated for direct bonding after the polishing of block 41 to form an activated surface 64′. For example, the bonding layer 62 can be exposed to a plasma comprising an activation species. In some embodiments, the plasma can comprise a nitrogen-containing species. For example, in embodiments in which the nonconductive bonding region 60 comprises silicon oxide or silicon carbonitride, the use of a nitrogen-containing plasma for activation can provide strong bonding energies. In other embodiments, the plasma can comprise an oxygen-containing plasma. For example, in embodiments in which the nonconductive bonding region 60 comprises silicon nitride or silicon carbonitride, the use of an oxygen-containing plasma for activation can provide strong bonding energies.

[0028] In a block 43 of FIG. 2A and in FIG. 3C, a protective layer 65, for example an organic protective layer (e.g., a photoresist), can be formed onto the activated surface 64′ of the bonding layer 62. The protective layer 65 can serve to protect the activated bonding surface 64′ during thinning (which in various embodiments may be performed before singulation) and singulation so as to prevent voids from forming after bonding. After providing the protective layer 65, as shown in a block 44 of FIG. 2A and in FIG. 3D, the first element 1 in wafer for (e.g., an activated substrate with the protective layer 65), can be thinned and singulated along saw streets S to form a plurality of singulated first elements 1 in the form of singulated device die(s). Beneficially, the protective layer 65 can protect the activated bonding surface 64′ during the singulation process (and other processing) from debris or damage. As shown in block 45 of FIG. 2A and in FIG. 3D, the protective layer 65 can be removed with a cleaning agent as described herein (e.g., a dry and/or wet cleaning process). In some embodiments, the cleaned singulated elements 1 may be ashed (e.g., exposed to an oxygen plasma) to remove any unwanted residues. As shown in block 45 of FIG. 2A and in FIG. 3D, the singulated first element 1 can be cleaned with deionized water (DIW), leaving the activated bonding surface 64′ exposed and ready for direct bonding. In some applications where the metallic surfaces of the pads 63 are exposed to oxygen plasma, a very thin layer of metallic oxide may form over the pads 63 (e.g., in the case of copper pads, a copper oxide film). The metal oxide film over the pad surface may be selectively removed by cleaning the surface of the substrate with a very dilute inorganic or organic acid solution to selectively remove the thin oxide layer without damaging the bonding surface 64′ of the nonconductive region 60 and without forming an excessive recess in the pads 63.

[0029] As shown in FIG. 2A, the second element 2 can be processed in a similar manner, or in a different manner. For example, in a block 46, the bonding surface of the second element 2 (which can be a wafer or a die) can be planarized and cleaned. In some embodiments, as shown in a block 47 of FIG. 2A, the second element 2 can also be activated as explained above before a protective layer 65 is applied to the activated surface 64′ in a block 48. In other embodiments, the second element 2 may not be activated at all, or, as shown in FIG. 2B, for example, may not be activated before the application of a protective layer 64. In some embodiments, no protective layer may be applied over the second element 2. In the illustrated embodiment, the protective layer can protect the bonding surface from debris and/or damage, e.g., that may occur during singulation, other processing steps, or transport between different facilities (e.g., during transportation between the wafer foundry and the bonding facility. The bonding surface of the second element 2 can be cleaned in a block 49. For example, in the embodiment of FIG. 2A in which the protective layer is applied, the protective layer can be removed and/or ashed. In block 49, wet and/or dry cleaning process(es) can be performed on the second element 2 to remove debris (including, e.g., a DIW cleaning step).

[0030] In some embodiments, the first element 1 and/or the second element 2 may be cleaned with a suitable cleaning agent, e.g., the cleaned surface may treated with more than one type of plasma (ashing plasma and nitrogen bearing plasma), and may be rinsed before coating with a protective layer 65. The protective layer 65 can be stripped from the bonding surfaces after the thinning and singulation process. In a block 50 of FIG. 2A, and as shown in FIG. 3E, the cleaned activated bonding surface 64′ of the singulated first element 1 can be directly bonded to the cleaned bonding surface of the second element 2. In some applications, the singulated second element 2 can be larger than the singulated first element 1, for example, in embodiments in which the first element 1 in the form of a device die is bonded to the second element 2 in the form of a wafer or larger carrier or interposer.

[0031] FIG. 2B illustrates an alternative process for forming the second element 2. Unless otherwise noted, the steps of FIG. 2B are generally the same as the steps of FIG. 2A. Unlike the embodiment of FIG. 2A, in the embodiment of FIG. 2B, the second element 2 may not be activated and subsequently coated with a protective layer. Rather, in block 46, the second element 2 can be planarized and cleaned. In block 49, the bonding surface can be dry and/or wet cleaned (and/or also cleaned with a DIW cleaning step). In a block 51, the second element 2 can be activated and cleaned with deionized water (DIW) before bonding in block 50. Thus, in FIG. 2B, the activation step for the second element 2 may not precede application of the protective coating. In still other embodiments, as explained above, the second element 2 may not be activated at all.

[0032] As shown in FIG. 3E, the first and second elements 1, 2 can be brought together in contact with one another to form a bonded structure 70 including direct bonds along a bond interface 72 between the nonconductive bonding regions 60 of the first and second elements 1, 2. The structure 70 can be annealed, and the contact pads 63 can extend to make direct contact and an electrical connection. Beneficially, one or both of the first and second elements 1, 2 can be activated prior to application of the protective layer and singulation. Activation prior to singulation can beneficially enable the element(s) 1, 2 to be activated (which may beneficially improve bonding energy) without damaging the dicing tape so as to make activation compatible with the dicing process. The protective layer 65 applied over the activated surface 64′ can also enable the protected element 1 in wafer form to be stored and/or transported to a different facility before bonding. For example, the first element 1 in wafer form shown in FIG. 3C can be stored for days (e.g., at least 24 hours), weeks, months, etc. before being bonded. The protective layer 65 can protect the activated surface 64′, which can remain suitable for direct bonding at a later time, and/or can enable the protected wafer to be shipped from a facility in one location (e.g., where the wafer was activated and the protective layer 65 applied) to another different facility in a different location (e.g., where the first element 1 in wafer form can be singulated and directly bonded to the second element 2).

[0033] Moreover, in some embodiments, the protective layer 65 can adhere better to the activated surface 64′ as compared to an unactivated surface. Additionally, activation of the bonding surface 64 prior to deposition of the protective layer 65 can serve to protect the contact pads 63 (which may comprise copper). In the arrangement of FIG. 1, the protective layer deposition and removal may chemically etch or remove portions of the metallic material from the contact pads 63, which can deepen the recess of the pads 63. Deeper recesses may result in incomplete electrical contact after annealing and/or the use of higher temperatures which can be undesirable. By activating the bonding surface 64 (including the contact pads 63), the activation can serve a passivation function which can protect the underlying contact pads 63 during subsequent processing (e.g., during deposition and removal of the protective layer 65).

[0034] The embodiments disclosed herein can be used for die-to-wafer (D2W) and die-to-die (D2D) applications in which one or a plurality of singulated elements 1 (e.g., singulated integrated device dies) are directly bonded to an element 2 (e.g., a wafer) that is larger than or the equal size with the singulated elements 1. In other embodiments, the embodiments disclosed herein can be used for wafer-to-wafer (W2W) applications in which the first element 1 in wafer form is directly bonded to another wafer. The activation and protective layer 65 can be provided on both elements 1, 2, or on only one element of the bonded structure 70. For example, in the embodiment of FIGS. 2A-2B, the first element 1 is initially in wafer form before being singulated and directly bonded to the second element 2. In FIGS. 2A-2B, the second element 2 is in wafer form for the direct bonding (e.g., as a semiconductor wafer, substrate, interposer, or other carrier), but in other embodiments, the second element 2 may also be in the form of a singulated die for direct bonding. In still other embodiments, both the first and second elements 1, 2 may be in wafer form for the direct bonding and, after direct bonding, singulated to form a plurality of bonded structures.

[0035] As explained herein, the first and second elements 1, 2 can be directly bonded to one another without an adhesive, which is different from a deposition process. The first and second elements 1, 2 can accordingly comprise non-deposited elements. Further, directly bonded structures 70, unlike deposited layers, can include a defect region along the bond interface 72 in which nanovoids are present. The nanovoids may be formed due to activation of the bonding surfaces 64 (e.g., exposure to a plasma). As explained above, the bond interface 72 can include concentration of materials from the activation and/or last chemical treatment processes. For example, in embodiments that utilize a nitrogen plasma for activation, a nitrogen peak can be formed at the bond interface 72. In embodiments that utilize an oxygen plasma for activation, an oxygen peak can be formed at the bond interface. In some embodiments, the bond interface 72 can comprise silicon oxynitride, silicon oxycarbonitride, or silicon carbonitride. As explained herein, the direct bond can comprise a covalent bond, which is stronger than van Der Waals bonds. The bonding layers 62 can also comprise polished surfaces that are planarized to a high degree of smoothness.

[0036] In various embodiments, the metal-to-metal bonds between the contact pads 63 can be joined such that copper grains grow into each other across the bond interface 72. In some embodiments, the copper can have grains oriented along the 111 crystal plane for improved copper diffusion across the bond interface 72. The bond interface 72 can extend substantially entirely to at least a portion of the bonded contact pads 63, such that there is substantially no gap between the nonconductive bonding regions 60 at or near the bonded contact pads 63. In some embodiments, a barrier layer may be provided under the contact pads 63 (e.g., which may include copper). In other embodiments, however, there may be no barrier layer under the contact pads 63, for example, as described in US 2019/0096741, which is incorporated by reference herein in its entirety and for all purposes.

[0037] FIG. 4 illustrates another method of forming a bonded structure 70. Unless otherwise noted, the steps and components referenced in FIG. 4 may be the same as or generally similar to like-numbered components of FIGS. 2A-3E. For example, as with the embodiment of FIGS. 2A-2B, the bonding surface 64 of the first element 1 can be planarized and cleaned in a block 21. The bonding surface 64 of the first element 1 can be activated in a block 22. However, in FIG. 4, there may be no protective layer provided before singulation. Rather, the first element 1 in wafer form can be singulated in a block 44. Debris from the singulation process (or other processing steps) can be removed by dry and/or wet clean processes in a block 45 (which may include a DIW cleaning step). In the embodiment of FIG. 4, the cleaning agent(s) may be suitably selected so as to remove any debris created during singulation. The second element 2 may be processed in a manner similar to that shown in FIG. 2A or 2B. The first and second elements 1, 2 can be directly bonded without an adhesive.

[0038] In one embodiment, a bonding method can include: activating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; and after the activating, providing a protective layer over the activated first bonding layer of the first element.

[0039] In some embodiments, the protective layer comprises an organic layer. In some embodiments, the protective layer comprises a photoresist. In some embodiments, the method can include removing the protective layer. In some embodiments, the first element is in the form of wafer before providing the protective layer, the method further comprising, before removing the protective layer, singulating the first element in wafer form to form a plurality of singulated first elements. In some embodiments, the method can include, after removing the protective layer, directly bonding the first bonding layer of the first element to the second bonding layer of the second element without an intervening adhesive. In some embodiments, the method can include rinsing at least one of the first and second bonding layers with deionized water (DIW) before the directly bonding. In some embodiments, before the directly bonding, the first element is in the form of a singulated integrated device die and the second element is in the form of a wafer. In some embodiments, the first bonding layer comprises a first plurality of conductive contact pads and a first non-conductive bonding region, wherein the second bonding layer comprises a second plurality of conductive contact pads and a second non-conductive bonding region, and wherein directly bonding comprise directly bonding the first and second pluralities of conductive contact pads to one another without an adhesive and directly bonding the first and second non-conductive bonding regions to one another without an adhesive. In some embodiments, the conductive contact pads comprise copper or copper alloy. In some embodiments, the non-conductive bonding region comprises a silicon-containing dielectric layer. In some embodiments, the non-conductive bonding region comprises a non-silicon dielectric layer that does not include silicon. In some embodiments, the method can include activating the second bonding layer before directly bonding. In some embodiments, activating the first bonding layer and providing the protective layer are performed in a first facility, and wherein directly bonding is performed at a second facility that is in a different location from the first facility. In some embodiments, directly bonding is performed more than twenty-four (24) hours after activating the first bonding layer. In some embodiments, activating the first bonding layer comprises plasma activating the first bonding layer. In some embodiments, plasma activating the first bonding layer comprises exposing the first bonding layer to a nitrogen-containing plasma. In some embodiments, the first bonding layer comprises silicon oxide or silicon carbonitride. In some embodiments, plasma activating the first bonding layer comprises exposing the first bonding layer to an oxygen-containing plasma. In some embodiments, the first bonding layer comprises silicon nitride or silicon carbonitride. In some embodiments, providing the protective layer comprises depositing the protective layer over the activated bonding layer of the first element.

[0040] In another embodiment, a structure prepared for direct bonding is disclosed. The structure can include an element having a base portion and a bonding layer on the base portion, the bonding layer comprising an activated surface for direct bonding; and a protective layer disposed over the activated surface of the bonding layer.

[0041] In some embodiments, the element comprises a wafer. In some embodiments, the element comprises a singulated integrated device die. In some embodiments, the base portion comprises a semiconductor and the bonding layer comprises a dielectric bonding region and a plurality of conductive contact pads. In some embodiments, exposed surfaces of the conductive contact pads are recessed below a bonding surface of the dielectric bonding region. In some embodiments, the protective layer comprises a polymer. In some embodiments, the activated surface comprises a plasma-activated surface. In some embodiments, the activated surface comprises silicon oxynitride. In some embodiments, the activated surface comprises silicon oxycarbonitride.

[0042] In another embodiment, a bonded structure can include: a first element having a first bonding layer comprising an activated surface for direct bonding, the activated surface formed by activation prior to formation and removal of a protective layer; and a second element having a second bonding layer directly bonded to the first bonding layer of the first element along a bond interface without an intervening adhesive.

[0043] In some embodiments, the first bonding layer comprises a first plurality of conductive contact pads and a first non-conductive bonding region, wherein the second bonding layer comprises a second plurality of conductive contact pads and a second non-conductive bonding region, wherein the first and second pluralities of conductive contact pads are directly bonded to one another without an adhesive, and wherein the first and second non-conductive bonding regions are directly bonded to one another without an adhesive. In some embodiments, the bond interface comprises silicon oxynitride. In some embodiments, the bond interface comprises silicon oxycarbonitride. In some embodiments, the first bonding layer comprises a silicon-containing dielectric material. In some embodiments, the first bonding layer comprises one or more of silicon oxide, silicon nitride, and silicon carbonitride. In some embodiments, the first bonding layer or the second bonding layer comprises a non-silicon dielectric layer that does not include silicon.

[0044] In another embodiment, a bonding method can include: plasma treating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; and after the plasma treatment, providing a protective layer over the treated first bonding layer of the first element.

[0045] In some embodiments, the method can include removing the protective layer from the treated first bonding layer, and, after the removing, directly bonding the treated first bonding layer to the second bonding layer of the second element without an intervening adhesive.

[0046] In another embodiment, a bonding method can include: plasma treating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; after the plasma treatment, providing a protective layer over the treated first bonding layer of the first element; singulating the plasma treated first element and the protective layer into a plurality of singulated first elements; cleaning the protective layer from the first bonding layer of at least one singulated first element of the plurality of singulated first elements; and bonding the at least one cleaned singulated first element to the second bonding layer of the second element.

[0047] In some embodiments, the plasma treatment comprises a nitrogen containing plasma. In some embodiments, the plasma treatment comprises an oxygen containing plasma. In some embodiments, the plasma treatment comprises treating the first bonding layer with more than one type of plasma. In some embodiments, the method can include rinsing the plasma treated surface with deionized water (DIW) before the bonding. In some embodiments, the method can include thinning the plasma treated first element before the singulating.

[0048] In another embodiment, a bonding method can include: activating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element; and after the activating, singulating the first element into a plurality of singulated first elements.

[0049] In some embodiments, the method can include, after the singulating, directly bonding at least one singulated first element of the plurality of singulated first elements to the second element without an intervening adhesive. In some embodiments, the method can include, after the activating and before the singulating, providing a protective layer over the first bonding layer. In some embodiments, the method can include, before the directly bonding, removing the protective layer from the first bonding layer. In some embodiments, the method can include activating the second bonding layer before the directly bonding. In some embodiments, directly bonding comprises directly bonding the at least one singulated first element to the second element with the second element in wafer form. In some embodiments, the method can include, after the activating and before the singulating, thinning the first element.

[0050] All of these embodiments are intended to be within the scope of this disclosure. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of the embodiments having reference to the attached figures, the claims not being limited to any particular embodiment(s) disclosed. Although this certain embodiments and examples have been disclosed herein, it will be understood by those skilled in the art that the disclosed implementations extend beyond the specifically disclosed embodiments to other alternative embodiments and/or uses and obvious modifications and equivalents thereof. In addition, while several variations have been shown and described in detail, other modifications will be readily apparent to those of skill in the art based upon this disclosure. It is also contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made and still fall within the scope. It should be understood that various features and aspects of the disclosed embodiments can be combined with, or substituted for, one another in order to form varying modes of the disclosed implementations. Thus, it is intended that the scope of the subject matter herein disclosed should not be limited by the particular disclosed embodiments described above, but should be determined only by a fair reading of the claims that follow.