Self-standing tin sulfide film for flexible batteries
11177473 · 2021-11-16
Assignee
Inventors
Cpc classification
Y02E60/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01M4/1397
ELECTRICITY
H01M2004/021
ELECTRICITY
H01M10/054
ELECTRICITY
International classification
Abstract
High-performance flexible batteries are promising energy storage devices for portable and wearable electronics. The major obstacle to develop flexible batteries is the shortage of flexible electrodes with excellent electrochemical performance. Another challenge is the limited progress in the flexible batteries beyond Li-ion because of safety concerns for the Li-based electrochemical system. Accordingly, a self-supported tin sulfide (SnS) porous film (PF) was fabricated as a flexible cathode material in Al-ion battery, which delivers a high specific capacity of 406 mAh/g. A capacity decay rate of 0.03% per cycle was achieved, indicating a good stability. The self-supported and flexible SnS film also shows an outstanding electrochemical performance and stability during dynamic and static bending tests. Microscopic images demonstrated that the porous structure of SnS is beneficial for minimizing the volume expansion during charge/discharge. This leads to an improved structural stability and superior long-term cyclability.
Claims
1. A method of forming a flexible electrode comprising the steps of: electrochemically depositing a tin (Sn) film onto a polished Sn foil for a predetermined length of time; removing the electrochemically deposited Sn film from the polished Sn foil, such that the electrochemically deposited Sn film is a self-supported Sn film; performing an electrochemical anodic treatment of the self-supported Sn film, the treatment including the steps of subjecting the self-supported Sn film to a constant voltage for a period of approximately thirty minutes; forming a self-supported tin oxide (SnO.sub.2) porous film from the self-supported Sn film during the step of performing the electrochemical anodic treatment; and performing a chemical vapor deposition treatment on the self-supported SnO.sub.2 porous film, the treatment including the steps of: disposing the self-supported SnO.sub.2 porous film in an atmosphere of sulfur (S) for a period of approximately thirty minutes; and forming a self-supported tin (II) sulfide (SnS) porous film from the self-supported SnO.sub.2 porous film.
2. The method of claim 1, wherein the formed self-supported SnS porous film has a thickness in a range of 0.1-100 μm.
3. The method of claim 1, wherein the formed self-supported SnS porous film has an electrical conductivity of 0.606 S/cm.
4. The method of claim 1, wherein the constant voltage is approximately nine volts.
5. The method of claim 1, wherein the predetermined length of time is approximately six hours.
6. The method of claim 1, wherein the step of electrochemically depositing the tin (Sn) film onto the polished Sn foil for the predetermined length of time further comprises forming an aqueous solution as a medium within which electrochemical deposit occurs.
7. The method of claim 1, wherein the step of electrochemically depositing the tin (Sn) film onto the polished Sn foil for the predetermined length of time further comprises forming a two-electrode deposition system including the polished Sn foil as a cathode and a Sn plate as an anode.
8. The method of claim 1, wherein the step of performing the chemical vapor deposition treatment on the self-supported SnO.sub.2 porous film further comprises forming an upstream heating zone and a downstream heating zone, disposing an amount of sulfur powder at the upstream heating zone, and disposing the self-supported SnO.sub.2 porous film at the downstream heating zone.
9. The method of claim 8, further comprising the steps of heating the upstream heating zone to 150° C., and heating the downstream heating zone to 350° C.
10. A flexible aluminum-ion battery comprising: a tin (II) sulfide (SnS) porous film as an electrode within the flexible aluminum-ion battery; the SnS porous film of the flexible battery having a reversible specific capacity of 406 mAh/g, such that ion diffusion within the flexible aluminum-ion battery is faster than ion-diffusion within aluminum-ion batteries without the SnS porous film; wherein the flexible aluminum-ion battery is non-rigid, such that the flexible aluminum-ion battery is capable of bending.
11. The flexible aluminum-ion battery of claim 10, wherein the SnS porous film has a thickness of approximately 2.3 μm.
12. The flexible aluminum-ion battery of claim 10, wherein the flexible aluminum-ion battery is capable of bending to form a 90° angle.
13. A method of improving aluminum-ion battery performance comprising the steps of: electrochemically depositing a tin (Sn) film onto a polished Sn foil for a predetermined length of time; removing the electrochemically deposited Sn film from the polished Sn foil, such that the electrochemically deposited Sn film is a self-supported Sn film; performing an electrochemical anodic treatment of the self-supported Sn film, the treatment including the steps of subjecting the self-supported Sn film to a constant voltage for a period of approximately thirty minutes; forming a self-supported tin oxide (SnO.sub.2) porous film from the self-supported Sn film during the step of performing the electrochemical anodic treatment; performing a chemical vapor deposition treatment on the self-supported SnO.sub.2 porous film, the treatment including the steps of: disposing the self-supported SnO.sub.2 porous film in an atmosphere of sulfur (S) for a period of approximately thirty minutes; and forming a self-supported tin (II) sulfide (SnS) porous film from the self-supported SnO.sub.2 porous film; and disposing the self-supported SnS porous film within a non-rigid aluminum-ion battery as an electrode, wherein ion diffusion within the aluminum-ion battery is faster than ion-diffusion within aluminum-ion batteries without the SnS porous film, and wherein the non-rigidity of the aluminum-ion battery is such that the battery is capable of flexing.
14. The method of claim 13, wherein the step of electrochemically depositing the tin (Sn) film onto the polished Sn foil for the predetermined length of time further comprises forming a two-electrode deposition system including the polished Sn foil as a cathode and a Sn plate as an anode.
15. The method of claim 13, further comprising a step of bending each of the aluminum-ion battery and the SnS porous film to 90°.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) For a fuller understanding of the invention, reference should be made to the following detailed description, taken in connection with the accompanying drawings, in which:
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DETAILED DESCRIPTION OF THE INVENTION
(41) In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings, which form a part thereof, and within which are shown by way of illustration specific embodiments by which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the invention.
(42) As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term “or” is generally employed in its sense including “and/or” unless the context clearly dictates otherwise.
(43) The present invention includes a self-supported SnS porous film (PF) as a new type of electrode material for rechargeable and flexible AIB s. An anodization treatment is used in the synthetic process in order to form a highly porous and sponge-like structure, which offers an adequate active surface area and short ion diffusion pathway for the electrochemical reactions. Moreover, the porous and layered structure of SnS may be helpful to buffer the volume expansion during charge/discharge, which can successfully improve the structural stability to achieve an excellent cyclability. As a consequence, the as-prepared SnS PF electrode shows a high reversible specific capacity of 406 mAh/g for AIB s. With a current density of 100 mA/g, the electrode shows a capacity decay rate of 0.03% per cycle, indicating an excellent stability.
(44) In an embodiment of the present invention, a self-supported SnS porous film was synthesized by electrochemically depositing an Sn film onto a polished Sn foil having a current density of 25 mA/cm.sup.2 for six hours. Then, the deposited Sn film was removed from the substrate, resulting in a self-supported Sn film. After that, electrochemical anodic treatment was performed on the self-supported Sn film with a constant voltage of 9V for 30 minutes to convert the metallic Sn film to a self-supported SnO.sub.2 porous film. Finally, a chemical vapor deposition (CVD) treatment in a sulfur atmosphere was conducted for 30 min to form SnS. In a typical process, a 2.3 μm thick self-supported Sn film was prepared (see
(45) The residual metal-framework within the porous structure formed seamless contact with active materials to construct a conductive framework, drastically improving electrode conductivity. The thickness of the film can be adjusted by controlling the electrodeposition time. X-ray diffraction (XRD) (see
(46) The calculated interlayer spacing of SnS is about 0.40 nm, which is much larger than Al.sup.3+ (0.067 nm). [17]. No other diffraction peaks were observed, indicating a complete conversion from SnO.sub.2 to SnS by CVD sulfurization treatment without forming secondary phase and impurity. A highly porous structure with pores sizes in a range of 50-100 nm was observed from the scanning electron microscopy (SEM) (see
(47) A flexible pouch cell was assembled to evaluate the electrochemical performance of SnS PF for rechargeable AIBs. Cyclic voltammetry (CV) at a scan rate of 0.1 mV/s was conducted to test electrochemical behavior in a voltage window of 0.5-2.42 V (vs Al/Al.sup.3+). As shown in
(48) To further investigate the electrochemical process during charge/discharge, ex-situ x-ray diffraction tests of SnS PF were performed at different charge/discharge potentials (see
(49) X-ray photoelectron spectroscopy (XPS) was performed to further elucidate the electrochemical mechanism. The XPS profiles of Sn and S in a pristine state, charged at 2.4 V, and discharged at 0.5 V, are shown in
(50) On the other side, the XPS spectra of sulfur present a similar shift in the pristine state, discharged state, and charged state. After discharging, the 2p spectra of sulfur shifted toward lower binding energy by 0.4 eV, reflecting the decrease of the valence state of sulfur. [20]. Similarly, after charging, the spectra of sulfur recovered to the pristine state with a higher binding energy increases, revealing a reversible reaction to increase the valence state of sulfur. It is clearly observed that a small satellite peak of S.sup.6+ is located around 168 eV after charging and discharging, owing to the oxidation of S.sup.2−‘ during the reaction. [20, 24]. An unknown peak around 161.5 eV was found after charging, which is similar to the result using SnS.sub.2 as the active material in AIBs. [20]. Further characterization is required to understand this new peak in the future.
(51) Based on the above discussion, it can be concluded that tin and sulfur changed valance states to balance the charge variation during the aluminum compounds insertion and extraction. The variations of tin and sulfur valence states agree with the ex-situ XRD results, which can significantly improve the reversibility and stability. [25]. In summary, the variation of the metallic valence state and the sulfur valence state are reported in other metal sulfide materials as AIBs, respectively. [7, 20, 24, 26, 27]. It is noted that this is the first time finding the variations of metallic and sulfur valence state in one AIB system.
(52) Based on the above discussion, the proposed electrochemical process during charging/discharging processes is as follows. In the charging process, the anode is:
4Al.sub.2Cl.sub.7—+3e.sup.−.fwdarw.7AlCl.sub.4—+Al
The cathode is:
SnS+nAlCl.sub.4—.fwdarw.ne.sup.−+SnS[AlCl.sub.4].sub.n
(53) In the discharge process, the anode is:
7AlCl.sub.4—+Al.fwdarw.4Al.sub.2Cl.sub.7—+3e.sup.−
The cathode is:
SnS[AlCl.sub.4].sub.n+ne.sup.−.fwdarw.SnS+nAlCl.sub.4—
(54) Galvanostatic charge-discharge tests at different charge/discharge current densities were performed to investigate the electrochemical behavior of SnS PF. As displayed in
(55) TABLE-US-00001 TABLE 1 Specific capacities for different Al-ion battery systems Specific capacity Electrode Electrolyte (mAh/g) Reference SnS porous film AlCl.sub.3/[EMIm]Cl 406 Instant application Ni.sub.3S.sub.2/graphene AlCl.sub.3/[EMIm]Cl 350 [7] Graphite AlCl.sub.3/[EMIm]Cl 110 [8] Carbon paper AlCl.sub.3/[EMIm]Cl 90 [30] Graphene AlCl.sub.3/[EMIm]Cl 123 [31] nanoribbons Li.sub.3VO.sub.4@C AlCl.sub.3/[EMIm]Cl 137 [32] Graphene film AlCl.sub.3/[EMIm]Cl 85 ± 3 [33] Graphene aerogel AlCl.sub.3/[EMIm]Cl 95 [34] WO.sub.3−x AlCl.sub.3/[EMIm]Cl 120 [35] MO.sub.2.5+yVO.sub.9+z AlCl.sub.3/[EMIm]Cl 340 [36] SnS.sub.2/rGO AlCl.sub.3/[EMIm]Cl 392 [20] CuHCF Al.sub.2(SO.sub.4).sub.3 69.2 [9] nanoparticles TiO.sub.2 nanoleaves Al(NO.sub.3).sub.3 141.3 [10] TiO.sub.2 nanotube AlCl.sub.3 75 [10] Graphite NaAlCl.sub.4 190 [19]
(56) The discharge plateau and capacity slightly decrease with increasing current densities, owing to the improved ion diffusion within the highly porous structure of SnS PF. [2]. The rate capability at different current densities presented in
(57) Energy density and power density are critical parameters in AIBs. The Ragone plot of SnS PF electrode and other similar metal sulfides systems are exhibited in
(58) In-situ transmission electron microscopy was performed on the SnS PF to explore the volume expansion during the charge/discharge process. The samples were prepared by scratching the tungsten probe against SnS PF and Li metal, with the samples then being mounted on the holder. Constant voltages at −2.0V and 4.0V were performed on the sample during charge/discharge processes, respectively.
(59) The morphology and composition of SnS PF after 1,000 cycling tests were examined using x-ray diffraction (XRD) and scanning electron microscopy (SEM) tests. As shown in
(60) To exploit superior electrochemical performance toward AIB s, open circuit voltage (OCV) was tested for a single cell, two-tandem cells, and three-tandem cells. As shown in
(61) Galvanostatic charge/discharge profiles at a current density of 100 mA/g were employed to evaluate the electrochemical performance of SnS PF under bending tests. As depicted in
(62) TABLE-US-00002 TABLE 2 Flexible performance Bending angle Specific capacity Retention R.sub.s R.sub.ct (°) (mAh/g) (%) (Ω) (Ω) 0 250 — 19 148 30 212 84.8 19.58 140 60 235 94 19.46 124.7 90 275 110 19.25 112.85 120 267 106.8 19.82 123.78 150 230 92 20.04 125.46 180 225 90 20.64 138.96
(63) In addition, EIS tests were carried out at different bending angles. As exhibited in
(64) To further investigate the flexible performance, the dynamic bending test was conducted on a programmable lab-made pressing and releasing stage. The pressing and releasing speed can be controlled by changing the rate on the panel. The cyclic voltammetry, galvanostatic charge-discharge profiles, and long-term cyclability were employed to investigate the electrochemical performance under dynamic stretching and releasing processing.
(65) Cyclic voltammetry (CV) of the as-prepared electrode at a scanning rate of 0.5 mV/s under dynamic stretching and releasing processing is shown in
(66) In summary, a self-supported SnS electrode with a highly porous structure was developed to enhance the mechanical and electrochemical performance for AIB s. As a consequence, the SnS PF delivers a high capacity of 406 mAh/g and a capacity decay rate of 0.03% per cycle, which is superior to the state-of-the-art AIBs electrodes. The superior dynamic and static electrochemical behavior and excellent cycling performance demonstrate a promising candidate for energy storage and conversion applications
(67) Experimental Method and Results
(68) The Sn deposit was fabricated through electrochemical deposition. Briefly, in a typical process, 0.5 M SnSO.sub.4, 1 M H.sub.2SO.sub.4, 0.5 M NaF, and 0.1 M Na.sub.2SO.sub.4 were dissolved in deionized water to form an aqueous solution. After that, 0.05 M nitrilotriacetic acid (N(CH.sub.2CO.sub.2H).sub.3) was added to the aqueous solution as an additive. The prepared solution was stirred for 30 mins in ambient temperature. A two-electrode deposition system with polished Sn foil as a cathode (0.02 mm thick) and Sn plate (3 mm thick) as an anode was employed to deposit Sn film. The cathode current density was controlled at 25 mA/cm.sup.2 to carry out the electrochemical deposition for six hours. A self-supported Sn film can be obtained after peeling the deposit from the Sn foil substrate. After that, electrochemical anodization was conducted with a constant voltage of 9 V for 30 min in an electrolyte of 0.05 M oxalic acid aqueous solution. The as-prepared sample was washed with deionized water and ethanol for three times, then dried under air flow. The sulfuration process was performed in a chemical vapor deposition system with two heating zones. Briefly, sulfur powder and anodized SnO.sub.2 film were placed at the upstream and downstream heating zones, respectively. The tube was evacuated to a low pressure of 20 mTorr (millitorr) for 30 min and purged with high pure N.sub.2 to remove the residual air. Then, upstream and downstream heating zones were heated to 150° C. and 350° C., respectively. The sulfuration treatment was controlled for 30 mins with N.sub.2 (at a mass flow rate of 100 sccm, or standard cubic centimeters per minute) as a carrier gas, followed by natural cooling.
(69) To test the electrical conductivity of the as-prepared Sn PF and control Sn PF samples with different charge/discharge potentials, various conductivity meters, diffractometers, scanning tunneling microscopes, and other machines were used. Samples were prepared by scratching a tungsten probe against the deposited SnS coating, and the samples are mounted on a holder. On the manipulator end, a tungsten rod is scratched on the lithium metal. The lithium metal was transferred to the tungsten probe inside the glovebox for minimum exposure of lithium to the atmosphere. Lithiation (charging) was performed by contacting the tungsten rod with the lithium on the SnS.sub.2 and applying −2.0 V with respect to the lithium. Delithiation was performed at 4.0 V.
(70) To take the electrochemical measurements, a room temperature ionic-liquid (IL) electrolyte was prepared by mixing 1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) and anhydrous AlCl.sub.3 in an argon-filled glove box (c.sub.O.sub.
REFERENCES
(71) [1] J. Li, K. Xie, Y. Lai, Z. A. Zhang, F. Li, X. Hao, X. Chen, Y. Liu, J. Power Sources 2010, 195, 5344; Y. Wang, Z. Y. He, J. J. Chen, K. Liang, K. Marcus, Z. S. Feng, Mater. Lett. 2017, 196, 4; V. Etacheri, R. Marom, R. Elazari, G. Salitra, D. Aurbach, Energy Environ. Sci. 2011, 4, 3243. [2] K. Liang, K. Marcus, S. Zhang, L. Zhou, Y. Li, S. T. De Oliveira, N. Orlovskaya, Y. H. Sohn, Y. Yang, Adv. Energy Mater. 2017, 7, 1701309. [3] N. Nitta, F. Wu, J. T. Lee, G. Yushin, Mater. Today 2015, 18, 252. [4] J. B. Goodenough, K. S. Park, J. Am. Chem. Soc. 2013, 135, 1167; D. H. Doughty, E. P. Roth, Electrochem. Soc. Interface 2012, 21, 37. [5] H. D. Yoo, I. Shterenberg, Y. Gofer, G. Gershinsky, N. Pour, D. Aurbach, Energy Environ. Sci. 2013, 6, 2265; E. Levi, Y. Gofer, D. Aurbach, Chem. Mater. 2009, 22, 860; K. Liang, K. Marcus, L. Guo, Z. Li, L. Zhou, Y. Li, S. De Oliveira, N. Orlovskaya, Y. H. Sohn, Y. Yang, Chem. Commun. 2017, 53, 7608. [6] M. C. Lin, M. Gong, B. Lu, Y. Wu, D. Y. Wang, M. Guan, M. Angell, C. Chen, J. Yang, B. J. Hwang, Nature 2015, 520, 324. [7] S. Wang, Z. Yu, J. Tu, J. Wang, D. Tian, Y. Liu, S. Jiao, Adv. Energy Mater. 2016, 6, 1600137. [8] D. Y. Wang, C. Y. Wei, M. C. Lin, C. J. Pan, H. L. Chou, H. A. Chen, M. Gong, Y. Wu, C. Yuan, M. Angell, Y. J. Hsieh, Y. H. Chen, C. Y. Wen, C. W. Chen, B. J. Hwang, C. C. Chen, H. Dai, Nat. Commun. 2017, 8, 14283. [9] S. Liu, G. Pan, G. Li, X. Gao, J. Mater. Chem. A 2015, 3, 959. [10] S. Liu, J. Hu, N. Yan, G. Pan, G. Li, X. Gao, Energy Environ. Sci. 2012, 5, 9743; Y. J. He, J. F. Peng, W. Chu, Y. Z. Li, D. G. Tong, J. Mater. Chem. A 2014, 2, 1721. [11] J. V. Rani, V. Kanakaiah, T. Dadmal, M. S. Rao, S. Bhavanarushi, J. Electrochem. Soc. 2013, 160, A1781; L. D. Reed, E. Menke, J. Electrochem. Soc. 2013, 160, A915. [12] J. Liu, Y. Wen, P. A. van Aken, J. Maier, Y. Yu, J. Mater. Chem. A 2015, 3, 5259; C. Zhu, P. Kopold, W. Li, P. A. van Aken, J. Maier, Y. Yu, Adv. Sci. 2015, 2, 1500200. [13] Z. Deng, D. Cao, J. He, S. Lin, S. M. Lindsay, Y. Liu, ACS Nano 2012, 6, 6197; Y. Zhang, J. Lu, S. Shen, H. Xu, Q. Wang, Chem. Commun. 2011, 47, 5226. [14] T. Zhou, W. K. Pang, C. Zhang, J. Yang, Z. Chen, H. K. Liu, Z. Guo, ACS Nano 2014, 8, 8323. [15] M. Nassary, J. Alloys Compd. 2005, 398, 21. [16] G. Gao, L. Yu, H. B. Wu, Small 2014, 10, 1741; P. Sinsermsuksakul, J. Heo, W. Noh, A. S. Hock, R. G. Gordon, Adv. Energy Mater. 2011, 1, 1116. [17] J. Henry, K. Mohanraj, S. Kannan, S. Barathan, G. Sivakumar, Eur. Phys. J. Appl. Phys. 2013, 61, 10301. [18] J. Qu, Y. X. Yin, Y. Q. Wang, Y. Yan, Y. G. Guo, W. G. Song, ACS Appl. Mater. Interfaces 2013, 5, 3932. [19] Y. Song, S. Jiao, J. Tu, J. Wang, Y. Liu, H. Jiao, X. Mao, Z. Guo, D. J. Fray, J. Mater. Chem. A 2017, 5, 1282. [20] Y. Hu, B. Luo, D. Ye, X. Zhu, M. Lyu, L. Wang, Adv. Mater. 2017, 29, 1606132. [21] T. Cai, L. Zhao, H. Hu, T. Li, X. Li, S. Guo, Y. Li, Q. Xue, W. Xing, Z. F. Yan, Energy Environ. Sci. 2018, 11, 2341. [22] F. Wang, F. Yu, X. Wang, Z. Chang, L. Fu, Y. Zhu, Z. Wen, Y. Wu, W. Huang, ACS Appl. Mater. Interfaces 2016, 8, 9022. [23] S. Li, J. Zheng, S. Zuo, Z. Wu, P. Yan, F. Pan, RSC Adv. 2015, 5, 46941. [24] Y. Hu, D. Ye, B. Luo, H. Hu, X. Zhu, S. Wang, L. Li, S. Peng, L. Wang, Adv. Mater. 2018, 30, 1703824. [25] S. Wang, S. Jiao, J. Wang, H. S. Chen, D. Tian, H. Lei, D. N. Fang, ACS Nano 2016, 11, 469. [26] Z. Yu, Z. Kang, Z. Hu, J. Lu, Z. Zhou, S. Jiao, Chem. Commun. 2016, 52, 10427. [27] X. Zhang, S. Wang, J. Tu, G. Zhang, S. Li, D. Tian, S. Jiao, ChemSusChem 2018, 11, 709. [28] T. Gao, X. Ji, S. Hou, X. Fan, X. Li, C. Yang, F. Han, F. Wang, J. Jiang, K. Xu, Adv. Mater. 2018, 30, 1704313. [29] S. Hu, W. Chen, J. Zhou, F. Yin, E. Uchaker, Q. Zhang, G. Cao, J. Mater. Chem. A 2014, 2, 7862; S. Aryal, E. V. Timofeeva, C. U. Segre, J. Electrochem. Soc. 2018, 165, A71; P. Moss, G. Au, E. Plichta, J. Zheng, J. Electrochem. Soc. 2010, 157, A1. [30] H. Sun, W. Wang, Z. Yu, Y. Yuan, S. Wang, S. Jiao, Chem. Commun. 2015, 51, 11892. [31] X. Yu, B. Wang, D. Gong, Z. Xu, B. Lu, Adv. Mater. 2017, 29, 1604118. [32] J. Jiang, H. Li, J. Huang, K. Li, J. Zeng, Y. Yang, J. Li, Y. Wang, J. Wang, J. Zhao, ACS Appl. Mater. Interfaces 2017, 9, 28486. [33] L. Zhang, L. Chen, H. Luo, X. Zhou, Z. Liu, Adv. Energy Mater. 2017, 7, 1700034. [34] H. Chen, F. Guo, Y. Liu, T. Huang, B. Zheng, N. Ananth, Z. Xu, W. Gao, C. Gao, Adv. Mater. 2017, 29, 1605958. [35] J. Tu, H. Lei, Z. Yu, S. Jiao, Chem. Commun. 2018, 54, 1343. [36] W. Kaveevivitchai, A. Huq, S. Wang, M. J. Park, A. Manthiram, Small 2017, 13, 1701296.
(72) All referenced publications are incorporated herein by reference in their entirety. Furthermore, where a definition or use of a term in a reference, which is incorporated by reference herein, is inconsistent or contrary to the definition of that term provided herein, the definition of that term provided herein applies and the definition of that term in the reference does not apply.
(73) The advantages set forth above, and those made apparent from the foregoing description, are efficiently attained. Since certain changes may be made in the above construction without departing from the scope of the invention, it is intended that all matters contained in the foregoing description or shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense.
(74) It is also to be understood that the following claims are intended to cover all of the generic and specific features of the invention herein described, and all statements of the scope of the invention that, as a matter of language, might be said to fall therebetween.