Abstract
A projection exposure apparatus for semiconductor lithography includes a mirror and a temperature-regulating device for regulating temperature on the basis of radiation. The mirror includes at least one cutout. The temperature-regulating device includes a temperature-regulating body arranged without contact in the cutout of the mirror. The temperature-regulating body has a cavity. A fluid for temperature regulation of the temperature-regulating body is present in the cavity.
Claims
1. An apparatus, comprising: a mirror comprising a cutout; and a cavity in the cutout of the mirror, wherein: the cavity is configured to allow a fluid to flow therethrough to regulate a temperature of the temperature-regulating body; the cavity does not contact the cutout of the mirror; and the apparatus is a semiconductor lithography projection exposure apparatus.
2. The apparatus of claim 1, wherein: the mirror comprises a mirror facet, a baseplate, and two bar bodies supported by the baseplate; the cutout is between the two bar bodies; and one of the bar bodies is between the baseplate and the mirror facet.
3. The apparatus of claim 1, wherein the cavity comprises an inlet configured to allow the fluid into the cavity and an outlet configured to allow the fluid out of the cavity.
4. The apparatus of claim 1, further comprising a laser configured to cool the fluid when the fluid is in the cavity by irradiating the fluid with laser radiation.
5. The apparatus of claim 4, wherein a reflectivity of an inner surface of the cavity is at least 90% for the laser radiation.
6. The apparatus of claim 1, wherein the cavity is configured so that, during use of the temperature-regulating body, a temperature of the temperature-regulating body is adjustable in a range of 20° C. to minus 70° C.
7. The apparatus of claim 1, further comprising a coating, wherein the coating is supported by an outer surface of the cavity or an inner surface of the cutout.
8. The apparatus of claim 7, wherein the coating has an absorptivity of at least 50% over a wavelength range of 6 μm to 20 μm.
9. The apparatus of claim 1, wherein at least one of the following holds: the cavity has an adjustable position; and the cavity has an adjustable orientation.
10. The apparatus of claim 1, further comprising a sensor configured to detect a distance between the cavity and an inner surface of the cutout.
11. The apparatus of claim 10, further comprising a control loop configured so that, when a distance between the cavity and the inner surface of the cutout is less than a predetermined value, the cavity is re-oriented and/or re-positioned so that the distance between the cavity and the inner surface of the cutout is at least the predetermined value, wherein the control loop is an open-loop control and/or a closed-loop control.
12. The apparatus of claim 1, further comprising a sensor configured to detect a temperature of the mirror.
13. The apparatus of claim 12, further comprising a sensor configured to detect a temperature of the cavity.
14. The apparatus of claim 12, further comprising a controller configured to control a temperature of the cavity based of the detected temperature of the mirror.
15. The apparatus of claim 1, further comprising a sensor configured to detect a temperature of the cavity.
16. The apparatus of claim 15, further comprising a controller configured to control a temperature of the cavity based of the detected temperature of the cavity.
17. The apparatus of claim 1, wherein the apparatus is configured to operate at a wavelength of used light a range of 1 nm to 120 nm.
18. The apparatus of claim 1, wherein the apparatus is configured so that, during use of the apparatus, the mirror is in a vacuum.
19. The apparatus of claim 1, wherein the apparatus comprises an illumination system and a projection optical unit, and the mirror is in the illumination system.
20. A system, comprising: a mirror comprising cutout; and a cavity in the cutout of the mirror, wherein: the cavity is configured to allow a fluid to flow therethrough to regulate a temperature of the temperature-regulating body; the cavity does not contact the cutout of the mirror; and the system is a semiconductor lithography illumination system.
Description
BRIEF DESCRIPTION OF THE FIGURES
[0021] Exemplary embodiments and variants of the disclosure are explained in more detail below with reference to the drawing. In the figures:
[0022] FIG. 1 shows a basic illustration of a projection exposure apparatus in which the disclosure can be implemented;
[0023] FIG. 2 shows an exemplary embodiment of the disclosure;
[0024] FIG. 3 shows an exemplary embodiment of the disclosure;
[0025] FIG. 4 shows an exemplary embodiment of the disclosure; and
[0026] FIG. 5 shows a diagram of spectral radiance versus wavelength.
EXEMPLARY EMBODIMENTS
[0027] FIG. 1 shows by way of example the basic construction of a microlithographic EUV projection exposure apparatus 1 in which the disclosure can find application. An illumination system of the projection exposure apparatus 1 has, in addition to a light source 3, an illumination optical unit 4 for the illumination of an object field 5 in an object plane 6. EUV radiation 14 in the form of optical used radiation generated by the light source 3 is aligned via a collector, which is integrated in the light source 3, in such a way that it passes through an intermediate focus in the region of an intermediate focal plane 15 before it is incident on a field facet mirror 2. Downstream of the field facet mirror 2, the EUV radiation 14 is reflected by a pupil facet mirror 16. With the aid of the pupil facet mirror 16 and an optical assembly 17 having mirrors 18, 19 and 20, field facets of the field facet mirror 2 are imaged into the object field 5.
[0028] A reticle 7 arranged in the object field 5 and held by a schematically illustrated reticle holder 8 is illuminated. A merely schematically illustrated projection optical unit 9 serves for imaging the object field 5 into an image field 10 in an image plane 11. A structure on the reticle 7 is imaged on a light-sensitive layer of a wafer 12 arranged in the region of the image field 10 in the image plane 11 and held by a likewise partly represented wafer holder 13. The light source 3 can emit used radiation in a wavelength range of, for example, between 1 nm and 120 nm.
[0029] The disclosure can likewise be used in a DUV apparatus, which is not illustrated. A DUV apparatus is set up in principle like the above-described EUV apparatus 1, wherein mirrors and lens elements can be used as optical elements in a DUV apparatus and the light source of a DUV apparatus emits used radiation in a wavelength range of 100 nm to 300 nm.
[0030] FIG. 2 shows an embodiment of the disclosure illustrating a schematic detail view of a mirror 50, which can correspond for example to a mirror 18 or 19 illustrated in FIG. 1. The mirror 50 comprises a mirror body 51 and an optical surface 52, which is heated by partial absorption of the EUV radiation 14. Furthermore, the mirror 50 comprises a cutout 53 extending perpendicular to the optical axis 54 of the mirror 50 through the entire mirror body 51. Depending on the shape of the optical surface 52 and the production methods used for the cutouts 53, the latter can also extend parallel to the optical surface 52. A temperature-regulating body 31 of a temperature-regulating device 30 is arranged in the cutout 53 in such a way that the temperature-regulating body 31 has no mechanical contact with the inner surfaces of the cutout 53 and is positioned in the latter at equidistant distances from the inner surfaces of the cutout 53. The temperature-regulating body 31 comprises a cavity 33, through which a fluid 39 flows. The cavity 33 is connected via an inlet 34 to a system (not illustrated) for conditioning the fluid 39, such as helium, for example, to a predetermined temperature, such as minus 70° Celsius, for example. Arranged on the opposite side of the mirror 30 is the outlet 35 of the cavity 33, which returns the fluid 39 to the system for conditioning. The inlet 34 and the outlet 35 can also be arranged on the same side of the mirror 50 and in this case the fluid 39 can be diverted at the opposite end of the temperature-regulating body 31, such that the cavity 33 comprises an outgoing portion and a return portion. The temperature-regulating body 31 is mounted in a receptacle 32 of the temperature-regulating device 30, which, by way of an actuator 36, is connected to a frame 38 of the projection exposure apparatus 1 illustrated in FIG. 1 and is thus mechanically decoupled visa vis the mirror 50. As a result, no vibrations can be transferred from the temperature-regulating device 30 to the mirror 50. The actuator 36 can move the temperature-regulating body 31 in such a way that the distance between the temperature-regulating body 31 and the cutout 53 remains constant, even in the case where the mirror 50 is moved in order to correct imaging aberrations. For the purpose of detecting the distance, a sensor 37 is arranged on the temperature-regulating body 31. Alternatively, the sensor 37 could also be arranged in the cutout 53 of the mirror 50. The signals detected are communicated to an open-loop and/or closed-loop control (not illustrated), which controls the actuator 36 on the basis of the sensor signals. The open-loop and/or closed-loop control also controls the flow rate and temperature of the fluid 39 in the temperature-regulating body 31. The sensors used for detecting the temperature of the temperature-regulating body 31 and of the mirror 50 are not illustrated for reasons of clarity.
[0031] FIG. 3 shows an embodiment of the disclosure illustrating a mirror 50 having a cutout 53. The set-up is identical to the mirror 50 illustrated in FIG. 2 with the difference that the fluid 45 does not flow through the temperature-regulating body 41 of the temperature-regulating device 40. The fluid 45, which comprises rubidium and/or argon, for example, is arranged in a cavity 43 of the temperature-regulating body 41 and is irradiated by a laser 42, as a result of which it cools down. This effect is attributable to reducing the velocity of the atoms 46 by suitable irradiation with laser radiation 47 (photons) and has already been verified experimentally. The effect is intensified by a coating 44 on the inner side of the cavity 43, the coating being reflective in the wavelength range of the laser used. In this case, the reflectivity has a value of greater than 90%. The arrangement of the temperature-regulating body 41 in the cutout 53 of the mirror 50 and on the receptacles 32, which are movable by actuators 36 on the frame 38, and also the orientation of the cutout 53 with respect to the optical axis 54 and/or with respect to the optical surface 52 are identical to those described in FIG. 2 and are not repeated again here.
[0032] FIG. 4 shows an embodiment of the disclosure illustrating a mirror 60 having a plurality of mirror facets 61, such as, for example, a field facet mirror 2 or pupil facet mirror 16 described in FIG. 1. The mirror facets 61 are arranged on bar bodies 68 one behind another, that is to say into the plane of the drawing in the view illustrated in FIG. 4. The bar bodies 68 are arranged next to one another on a baseplate 67, which is cooled by a cooling device 69. For additional temperature regulation of the bar bodies 68, which are connected to the baseplate 67 by the side facing away from the mirror facets 61, a temperature-regulating device 63 regulates the temperature of the bar bodies 68. The temperature-regulating device comprises temperature-regulating bodies 64 arranged in cutouts 62 between the individual bar bodies 68 in such a way that temperature regulation of the bar bodies 68 without contact is brought about by way of radiation. For the purpose of temperature regulation, as described in FIG. 2, a fluid 66 can flow through a cavity 65 formed in the temperature-regulating body 64 or, as described in FIG. 3, rubidium (not illustrated) or argon (not illustrated) contained in the fluid 66 is irradiated by laser in order to realize laser cooling. In the first case, the cavity 65 is connected to an inlet and an outlet, which are not illustrated in the view shown. Other kinds of temperature regulation of the temperature-regulating body are also conceivable.
[0033] FIG. 5 shows a diagram in which spectral radiance (W/m.sup.2nmsr) is plotted against wavelength for the inner surface—illustrated in FIGS. 2 to 4—of the cutout 53 of the mirror 50 at a temperature of 22° Celsius. A maximum at which heat is emitted the most can be discerned at a wavelength of 9 μm. On the basis of this, the inner surfaces of the cutout 53 of the mirror 50 and the outer surfaces of the temperature-regulating body 50 are configured in such a way that they both respectively absorb relatively well at this wavelength and thereby ensure a sufficient cooling capacity.
LIST OF REFERENCE SIGNS
[0034] 1 Projection exposure apparatus
[0035] 2 Field facet mirror
[0036] 3 Light source
[0037] 4 Illumination optical unit
[0038] 5 Object field
[0039] 6 Object plane
[0040] 7 Reticle
[0041] 8 Reticle holder
[0042] 9 Projection optical unit
[0043] 10 Image field
[0044] 11 Image plane
[0045] 12 Wafer
[0046] 13 Wafer holder
[0047] 14 EUV radiation
[0048] 15 Intermediate field focal plane
[0049] 16 Pupil facet mirror
[0050] 17 Assembly
[0051] 18 Mirror
[0052] 19 Mirror
[0053] 20 Mirror
[0054] 30 Temperature-regulating device
[0055] 31 Temperature-regulating body
[0056] 32 Receptacle
[0057] 33 Cavity
[0058] 34 Inlet
[0059] 35 Outlet
[0060] 36 Actuator
[0061] 37 Sensor
[0062] 38 Frame
[0063] 39 H2, fluid
[0064] 40 Temperature-regulating device
[0065] 41 Temperature-regulating body
[0066] 42 Laser
[0067] 43 Cavity
[0068] 44 Coating
[0069] 45 Rubidium, fluid
[0070] 46 Atoms
[0071] 47 Laser radiation
[0072] 50 Mirror
[0073] 51 Mirror body
[0074] 52 Optical surface
[0075] 53 Cutout
[0076] 54 Optical axis
[0077] 60 Mirror
[0078] 61 Mirror facet
[0079] 62 Cutout
[0080] 63 Temperature-regulating device
[0081] 64 Temperature-regulating body
[0082] 65 Cavity
[0083] 66 Fluid
[0084] 67 Baseplate
[0085] 68 Bar body
[0086] 69 Cooling device baseplate
