Component and Method for Manufacturing a Component

Abstract

In an embodiment a component includes at least one carrier layer, the carrier layer having a top side and a bottom side and at least one functional layer arranged on the top side of the carrier layer, the functional layer including a material having a specific electrical characteristic, wherein the component is configured for direct integration into an electrical system as a discrete component.

Claims

1.-25. (canceled)

26. A component comprising: at least one carrier layer, the carrier layer having a top side and a bottom side; and at least one functional layer arranged on the top side of the carrier layer, the functional layer comprising a material having a specific electrical characteristic, wherein the component is configured for direct integration into an electrical system as a discrete component.

27. The component according to claim 26, wherein the carrier layer comprises silicon, silicon carbide or glass.

28. The component according to claim 26, wherein the functional layer is arranged to the carrier layer in a form-fitting and material-fitting manner, or wherein the functional layer is located directly in a material of the carrier layer locally or as a layer.

29. The component according to claim 26, wherein the functional layer comprises a dielectric or an antiferroelectric ceramic based on an oxide material in a perovskite structure type.

30. The component according to claim 26, wherein the functional layer comprises an ion-conducting ceramic based on a material in a Nasicon structure type.

31. The component according to claim 26, wherein the functional layer comprises a semiconducting material based on an oxide in a spinel structure type or in a perovskite structure type.

32. The component according to claim 26, wherein the functional layer comprises a semiconducting material based on a perovskite structure of polycrystalline BaTiO.sub.3 with Pb, Sr, Ca for adjusting a Curie temperature and Y, Mn, Fe as dopants, and wherein the polycrystalline structure has a positive temperature coefficient.

33. The component according to claim 26, further comprising at least one protective layer arranged on a top side of the component and/or on at least one side face of the component.

34. The component according to claim 33, wherein the protective layer comprises SiO.sub.2.

35. The component according to claim 26, further comprising at least one feedthrough, wherein the feedthrough completely penetrates the carrier layer, and wherein at least one contact element is arranged on the bottom side of the carrier layer, the contact element configured for electrical contacting of the component.

36. The component according to claim 35, wherein the component has at least two feedthroughs, wherein two contact elements are located on the bottom side of the carrier layer.

37. The component according to claim 26, further comprising at least one cover electrode, wherein the cover electrode is configured for electrically contacting the functional layer from a top side of the functional layer.

38. The component according to claim 37, wherein the cover electrode is arranged directly on the functional layer.

39. The component according to claim 37, wherein the cover electrode comprises at least one sputtered layer.

40. The component according to claim 37, wherein the component comprises at least two cover electrodes, wherein the cover electrodes are arranged next to each other, and wherein the cover electrodes are spatially and electrically separated from one another by at least one recess.

41. The component according to claim 26, wherein the component is configured for direct integration into a MEMS structure and/or into a SESUB structure.

42. A method for manufacturing a component, the method comprising: providing a carrier material for forming a carrier layer; forming at least one feedthrough, the feedthrough completely penetrating the carrier material; filling the at least one feedthrough with a metallic material; coating the carrier material with a functional material to form a functional layer; and singulating the components.

43. The method according to claim 42, further comprising, prior to singulating the components, depositing at least one cover electrode onto a top side of the functional material.

44. The method according to claim 43, wherein the cover electrode is formed for electrically contacting the functional layer from a top side of the functional layer.

45. The method according to claim 43, wherein the cover electrode is arranged directly on the functional layer.

46. The method according to claim 42, wherein the functional layer is generated by a PVD or CVD process, or wherein the functional material is provided by a sol-gel process or by a ceramic slurry and is applied to the carrier material by a CSD process.

47. The method according to claim 42, further comprising annealing after coating the carrier material with the functional material.

48. The method according to claim 42, wherein coating the carrier material with the functional material is performed before forming the at least one feedthrough or before filling the at least one feedthrough.

49. The method according to claim 42, further comprising forming at least one contact element for electrically contacting the component on a bottom side of the carrier layer.

50. The method according to claim 42, wherein the component is formed for direct integration into a MEMS structure and/or into a SESUB structure.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The drawings described below are not to be understood as true to scale. Rather, individual dimensions may be enlarged, reduced or even distorted for better representation.

[0052] Elements that are similar to one another or that perform the same function are designated with the same reference signs.

[0053] FIG. 1 shows a component according to a first embodiment;

[0054] FIG. 2 shows a component according to a second embodiment;

[0055] FIG. 3 shows a component according to a third embodiment;

[0056] FIG. 4 shows a component according to a fourth embodiment;

[0057] FIG. 5 shows a component according to a fifth embodiment;

[0058] FIG. 6 shows a component according to a sixth embodiment;

[0059] FIGS. 7-11 show a method for manufacturing a component;

[0060] FIGS. 12-7 show an alternative method for manufacturing a component;

[0061] FIGS. 18-22 show an alternative method for manufacturing a component;

[0062] FIGS. 23-28 show an alternative method for manufacturing a component; and

[0063] FIGS. 29-35 show an alternative method for manufacturing a component.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0064] FIG. 1 shows a component 1 according to a first embodiment. The component 1 is preferably designed as a passive component. The component 1 is preferably a sensor element, a capacitor, a protective component or a heating element.

[0065] The component 1 has at least one carrier layer 2 or a wafer 2. The carrier layer 2 has a top side 2a and a bottom side 2b. The carrier layer 2 has a carrier material, preferably silicon (Si), silicon carbide (SiC) or glass (silicate or borosilicate). The carrier layer 2 serves to mechanically stabilize the component 1.

[0066] The component 1 further comprises at least one functional layer 5. In this embodiment example, the component 1 has exactly one functional layer 5. However, several functional layers 5 are also conceivable, for example two, three or four functional layers 5, which can, for example, be arranged next to each other or one above the other.

[0067] In this embodiment example, the functional layer 5 is arranged on the top side 2a of the carrier layer 2. The functional layer 5 preferably completely covers the top side 2a of the carrier layer 2. The functional layer 5 is arranged on the carrier layer 2 in a form-fit and material-fit manner. Alternatively, the functional layer 5 is generated directly in a material of the carrier layer 2 locally or as a layer. The functional layer 5 has a very small thickness of less than or equal to 1 μm.

[0068] The functional layer 5 has a material with a specific electrical characteristic. For example, the functional layer 5 has a dielectric or antiferroelectric ceramic based on an oxide material in the perovskite structure type. The perovskite consists, for example, of solid solutions of the composition PLZT, in which La may be wholly or partially replaced by, for example, Na or Cu.

[0069] The functional layer 5 may also have an ion-conducting ceramic based on a material in the Nasicon structure type. In this case, the composition is based, for example, on solid solutions of LATP, LVP, LZP and other typical active materials for batteries such as LiCo, LiFeP.

[0070] Alternatively, the functional layer 5 may have a semiconducting material based on an oxide in the spinel structure type or perovskite structure type. The composition of the spinel is preferably based on solid solutions of NiMn.sub.2O.sub.4, in which Ni and Mn can be completely or partially replaced with, for example, Fe, Co, Al. The perovskite preferably has solid solutions of the composition CaMnO.sub.3, in which Ca may be wholly or partially replaced by, for example, Y, Cr, Al or La.

[0071] The functional layer 5 can also have a semiconducting material based on a perovskite structure of polycrystalline BaTiO.sub.3 with Pb, Sr, Ca to adjust the Curie temperature and, for example, Y, Mn, Fe as dopants. Here, the polycrystalline structure preferably has a positive temperature coefficient.

[0072] Alternatively, the functional layer 5 may also have a semi-conductive material based on silicon carbide in the hexagonal wurtzite-like structure or the cubic phase in the zinc-trim structure type. In an alternative embodiment, the functional layer 5 may further comprise a metal nitride in the wurtzite structure type.

[0073] In the embodiment according to FIG. 1, the carrier layer 2 further comprises two feedthroughs 3. Alternatively, the component 1 may have only one feedthrough 3 (see FIG. 3) or no feedthrough 3 at all (see FIG. 4). Furthermore, more than two feedthroughs 3, for example three or four feedthroughs, are also conceivable (not explicitly shown).

[0074] The respective feedthrough 3 penetrates the carrier layer 2 completely. In other words, the feedthrough 3 extends from the top side 2a to the bottom side 2b of the carrier layer 2. The feedthrough 3 has a metallic material, for example copper or gold.

[0075] The component 1 shown in FIG. 1 further comprises two contact elements 4. The contact elements 4 are arranged on the bottom side 2a of the carrier layer 2. The contact elements 4 are formed directly or immediately at the feedthroughs 3. The contact elements 4 are in electrical and mechanical contact with the feedthroughs 3. The contact elements 4 serve to electrically connect the component 1. Furthermore, the component 1 can be stacked on other components of an electrical system, for example, via the contact elements 4.

[0076] The contact elements 4 can, for example, be designed as bumps or as a thin electrode. The contact elements 4 have a metal, for example copper, gold or solderable alloys. The feedthroughs 3 serve to connect the functional layer 5 on the top side 2a of the carrier layer 2 with the contact elements 4 on the bottom side 2a of the carrier layer 2 and thus to contact the functional layer 5 electrically. Thus, a robust and reliable component 1 is provided.

[0077] In a further embodiment (not explicitly shown), a protective layer 7 is further arranged on a top side 1a of the component 1. In this case, the protective layer 7 is formed directly on the functional layer 5. The protective layer 7 completely covers a top side 5a of the functional layer 5. The protective layer 7 preferably has SiO.sub.2. The protective layer 7 serves to protect the functional layer 5 and the component 1 from external influences (see also FIG. 2).

[0078] Due to its special contacting (feedthroughs 3, contact elements 4) and the special layer structure (thin functional layer 5 with special electrical characteristics), the component 1 is designed in such a way that it can be integrated as a complete component in a Si chip or on a printed circuit board. In particular, the component 1 is designed to be integrated as a discrete component in MEMS or SESUB structures.

[0079] Overall, the component 1 is designed to be very compact. The component 1 has a very small dimension. The component 1 has a width of preferably less than or equal to 500 μm, for example 50 μm, 100 μm, 250 μm, 300 μm, 400 μm or 450 μm. Preferably, the component 1 has a length of less than or equal to 500 μm, for example 50 μm, 100 μm, 250 μm, 300 μm, 400 μm or 450 μm. Preferably, the component 1 has a rectangular basic shape. The component 1 has a height (extension in stacking direction) of preferably less than or equal to 100 μm, for example 10 μm, 50 μm or 80 μm.

[0080] Due to the compact design and the contacting by means of the feedthroughs 3 and the contact elements 4, the component 1 is ideally suited for integration in MEMS or SESUB structures.

[0081] FIG. 2 shows a component 1 in a second embodiment. In contrast to the component 1 described in connection with FIG. 1, the component 1 according to FIG. 2 additionally has a cover electrode 6. The cover electrode 6 is arranged on the top side 5a of the functional layer 5. In particular, the cover electrode 6 is applied directly to the functional layer 5. In this embodiment example, the cover electrode 6 completely covers the top side 5a of the functional layer 5. The functional layer 5 can be contacted from the top side by means of the cover electrode 6. Contact is made on the bottom side via the feedthroughs 3 and contact elements 4.

[0082] The cover electrode 6 has a metallic material, preferably Au, Ni, Cr, Ag, W, Ti or Pt. Preferably, the cover electrode 6 is deposited on the functional layer 5, for example by means of a PVD or CVD process or galvanically. Preferably, the cover electrode 6 is sputtered onto the functional layer 5. The cover electrode 6 is a thin film electrode. In other words, the cover electrode 6 preferably has a thin metal film. The cover electrode 6 has a thickness d or height of ≥100 nm and ≤1 μm, for example 500 nm.

[0083] In this embodiment, the component 1 further has the protective layer 7 already described in connection with FIG. 1. The cover electrode 6 is therefore arranged between the functional layer 5 and the protective layer 7 in the case shown. In other words, the protective layer 7 is formed directly on the cover electrode 6 in this embodiment.

[0084] In an alternative embodiment example (not explicitly shown), however, the protective layer 7 can also be omitted. In this case, the cover electrode 6 forms the top side of the component 1. In this embodiment example, it is possible to realize an additional contacting, for example by wire bonding on the cover electrode 6 (not explicitly shown).

[0085] With regard to all further features of the component 1 according to FIG. 2, reference is made to the description of FIG. 1.

[0086] FIG. 3 shows a component 1 in a third embodiment. In this embodiment, the component 1 has only one feedthrough 3 and one contact element 4, whereby the functional layer 5 is contacted from the bottom side. The contact element 4 can be designed as a bump or as a thin electrode, as already described.

[0087] In this embodiment, the component 1 further has the cover electrode 6 already described in connection with FIG. 2. In contrast to FIG. 2, the cover electrode 6 in this embodiment is mandatory for (top) contacting of the functional layer 5.

[0088] With regard to all further features of the component 1 according to FIG. 3, reference is made to the description of FIG. 1 and FIG. 2.

[0089] FIG. 4 shows a component 1 in a fourth embodiment. In this embodiment, the component 1 has no feedthroughs 3 and also no contact elements 4 on the bottom side 2a of the carrier layer 2. Rather, the functional layer 5 is contacted here exclusively from the top side. In particular, the component 1 has two cover electrodes 6a, 6b for electrical connection of the component 1. The cover electrodes 6a, 6b are formed directly on the functional layer 5, preferably deposited, as already explained in connection with FIG. 2. The cover electrodes 6a, 6b are arranged next to each other on the functional layer 5.

[0090] The respective cover electrode 6a, 6b can be formed in a single layer or in multiple layers. The respective cover electrode 6a, 6b is preferably a thin film electrode. The respective cover electrode 6a, 6b preferably has at least one sputtered metal layer. For example, the respective cover electrode 6a, 6b has Au, Ni, Cr, Ag, W, Ti or Pt. Preferably, the respective cover electrode 6a, 6b has a thickness or height between wo nm and 1 μm.

[0091] In this embodiment, the cover electrodes 6a, 6b form the top side of the component 1. Alternatively (not explicitly shown), however, a protective layer 7 can also be provided, which is arranged on the cover electrodes 6a, 6b.

[0092] The cover electrodes 6a, 6b are electrically separated from each other. For this purpose, at least one recess or gap 8 is formed between the cover electrodes 6a, 6b, as shown in FIG. 4. This recess 8 separates the cover electrodes 6a, 6b spatially and electrically. With the size (horizontal extension, i.e. extension perpendicular to the stacking direction) of the recess 8, the resistance of the component 1 can be adjusted. If the size of the recess 8 is reduced, the resistance decreases. However, this also increases a scattering of the resistance. To avoid this or to increase the area between the cover electrodes 6a, 6b and thus reduce the resistance, a comb structure can also be provided between the cover electrodes 6 (not shown explicitly). In this case, the cover electrodes 6 are arranged side by side in an interlocking manner.

[0093] FIG. 5 shows a component 1 in a fifth embodiment. In this embodiment, the component 1 has two feedthroughs 3, two contact elements 4, and two cover electrodes 6.

[0094] Compared to the embodiment shown in FIG. 1, in this embodiment the feedthroughs 3 penetrate not only the carrier layer 2 but also the functional layer 5 completely. In particular, the respective metallic feedthrough 3 projects into the functional layer 5 and is enclosed by it. The respective feedthrough thus extends from the bottom side 2b of the carrier layer 2 through the carrier layer 2 and the functional layer 5 to the top side 5a of the functional layer 5.

[0095] A cover electrode 6 is formed on the top side of the respective feedthrough 3 in each case. In this embodiment example, the respective cover electrode 6 is also at least partially embedded in the functional layer 5. The cover electrodes 6 thus at least partially form the top side 5a of the functional layer 5.

[0096] The protective layer 7 is formed directly on the functional layer 5. In this case, the protective layer 7 covers the top side 5a of the functional layer 5, which is at least partially formed by the cover electrodes 6.

[0097] Contact is made on the bottom side via feedthroughs 3 and contact elements 4, for example bumps. More than the feedthroughs shown in FIG. 5 can be provided, for example four feedthroughs.

[0098] FIG. 6 shows a component 1 in a sixth embodiment. As in the embodiment shown in FIG. 5, the component 1 has two feedthroughs 3, two contact elements 4 and two cover electrodes 6.

[0099] Here, too, the feedthroughs 3 penetrate the functional layer 5 completely. In particular, each feedthrough extends from the bottom side of the carrier layer 2 through the carrier layer 2 and the functional layer 5 to the top side of the functional layer 5.

[0100] In contrast to the embodiment according to FIG. 5, the respective feedthrough 3 is conical here. In this case, the respective cover electrode 6 is produced in an electroplating process. Subsequently, a “fly-cutting” step can be carried out for planarization.

[0101] In this embodiment, the respective cover electrode 6 is formed on the surface of the functional layer 5.

[0102] The protective layer 7 is formed directly on the functional layer 5. The protective layer 7 covers the top side of the functional layer 5. The contacting on the bottom side is again made via the feedthroughs 3 and contact elements 4, for example bumps.

[0103] FIGS. 7 to 11 show a method for manufacturing a component 1. Preferably, the method manufactures the component 1 according to one of the embodiments described above. All features described in connection with the component 1 are therefore also applicable to the method and vice versa.

[0104] In a first step A), a carrier material 10 is provided for forming the carrier layer 2 described above (see FIG. 7 top). Preferably, the carrier material 10 comprises Si, SiC or glass.

[0105] In a next step B), the feedthroughs 3 described above are produced. For this purpose, vias/breakthroughs 12 are created in the carrier material 10, for example by photolithography and subsequent plasma etching (“dry etching”) (see FIG. 7 centre and bottom). Alternatively, the vias 12 can also be produced with a laser (laser drilling).

[0106] In a step C), the vias/breakthroughs 12 are filled with a metallic material 13 (e.g. copper), e.g. by electroplating (see FIG. 8). The photoresist ii used in photolithography (see FIG. 7) is then washed off.

[0107] In a further step D), the carrier material 10 is coated with a functional material 14 to form the functional layer 5 (see FIG. 9).

[0108] The coating is carried out, for example, by a PVD or CVD process. Thereby, a thin film of the functional material 14 is produced on the carrier material 10. Optionally, an annealing step can take place after step D).

[0109] Alternatively, the functional layer 5 can also be produced by a sol-gel process or by means of ceramic slurry and applied to the carrier material 10 by a CSD process (e.g. spin coating). In this variant, a subsequent thermal process is required.

[0110] In an alternative embodiment, the process step D) can also be carried out before the generation of the vias/breakthroughs 12 (step B)). In this case, the metallic material 13 projects into the functional layer 5 and is enclosed by it (see also the embodiment described in connection with FIG. 5/FIG. 6).

[0111] In a further step, electrode material 15 is deposited to form the at least one cover electrode 6 (see FIG. 10 in connection with FIGS. 2 to 6). The electrode material 15 preferably comprises Au, Ni, Cr, Ag, W, Ti or Pt. The deposition is carried out by a PVD or CVD process or galvanically.

[0112] A single-layer or multilayer thin cover electrode 6 (thin film electrode) is produced. In particular, the cover electrode 6 is deposited as a thin electrode film on the functional material 14 in this process step. If two cover electrodes 6 are deposited, a recess (see FIG. 4) or a comb-like structure is provided for electrical separation of the cover electrodes 6a, 6b.

[0113] In an optional step, the formation of the protective layer 7 can further be carried out by applying the appropriate material (preferably SiO.sub.2) either to the functional material 14 (embodiment according to FIG. 1) or to the electrode material 15 (embodiments according to FIGS. 2 to 6).

[0114] In a final step E), the components 1 are singulated (see FIG. 11). This is done by applying photoresist 11 and subsequent plasma etching or sawing of the functional layer 5 and the part of the carrier material 10 which determines the height or thickness of the later carrier layer 2 (notching).

[0115] Alternatively, the thinning of the carrier material 10 on the bottom side can be carried out in two steps, whereby in a first step the carrier material 10 is etched or ground away over its surface, and in a second step the separation is carried out by etching over its surface and the contact elements 4 are exposed without oxidizing the metal in the process.

[0116] FIGS. 12 to 17 show an alternative method for producing a component 1. Preferably, in the following method a component 1 with a glass carrier layer 2 is produced.

[0117] In a first step, a carrier material 10 is provided for forming the carrier layer 2 described above (see FIG. 12). Preferably, the carrier material 10 comprises borosilicate glass (glass wafer).

[0118] In a further step (see FIG. 13), the feedthroughs 3 are produced. In this embodiment, this is done by etching vias/breakthrough 12 in the glass wafer, preferably by LIDE (laser induced deep etching). In this process, breakthroughs 12 are preferably created which have a conical shape (see also FIG. 6).

[0119] In a further step, the carrier material 10 is coated with a functional material 14 to form the functional layer 5, for example an NTC layer (FIG. 14). Here, functional material 14 can also be applied in an inner region of the respective via/breakthrough 12. In particular, the inner region of the via/breakthrough 12 is completely coated with the functional material 14.

[0120] In this embodiment, the functional material 14 remains completely on the carrier material 10 or in the inner region of the via/breakthrough 12. Subsequent steps for partial removal of the functional material 14, which are both expensive and time-consuming, are not required. This simplifies and cheapens the process.

[0121] In a further step, the vias/breakthroughs 12 are filled with a metallic material 13 (preferably copper), preferably galvanically. For this purpose, a sacrificial layer or seed layer of the metallic material 13 (preferably copper) is first sputtered onto the functional material 14 (not explicitly shown). Furthermore, a photolithography mask 16 (photoresist) is applied to the functional material 14 (FIG. 11).

[0122] Subsequently, the vias/breakthroughs 12 are galvanically filled with the metallic material 13. Metallic material 13 is also deposited at least partially in spaces between the photolithography mask 16 on the top side of the functional material 14 to form the cover electrodes 6 (FIG. 16).

[0123] The photolithography mask 16 is then removed again, e.g. washed off (FIG. 16). Furthermore, the previously mentioned sacrificial layer or seed layer is also partially removed, for example by etching.

[0124] In a final step, the carrier material 10 is thinned out on the bottom side by backgrinding or etching (FIG. 17). The metallic material 13 then protrudes from the bottom side of the carrier material 10 to the top side of the functional material 14. The metallic material 13 thus completely penetrates the two layers. The metallic material 13 partially rests on the top side of the carrier material 14, as can be seen in FIGS. 16 and 17 (see also FIG. 6).

[0125] FIGS. 18 to 22 show an alternative method for producing a component 1. Preferably, in the following method, a component 1 with a glass carrier layer 2 is produced.

[0126] In a first step, a carrier material 10 is provided for forming the carrier layer 2 described above. Preferably, the carrier material 10 comprises glass (silicate or borosilicate) (glass wafer).

[0127] In contrast to the method described in connection with FIGS. 12 to 17, a hard mask 17 is applied to the top side of the carrier layer 10 in a next step (FIG. 18). The mask 17 is preferably a solid support with structures, for example recesses.

[0128] In a next step, the feedthroughs 3 are created. This is done by etching vias/breakthroughs 12 in the glass wafer. Breakthroughs 12 are created which have a conical shape (FIG. 18).

[0129] In a further step, the mask 17 is removed. The carrier material 10 is then coated with a functional material 14 to form the functional layer 5, for example an NTC layer (FIG. 19). Functional material 14 is also applied in an inner region of the respective breakthrough 12. Here, too, a subsequent partial removal of the functional material 14 is not necessary, which simplifies the process and makes it more cost-effective.

[0130] In a further step, the vias/breakthroughs 12 are filled with a metallic material 13 (for example copper). For this purpose, a sacrificial layer/seed layer of the metallic material 13 is first sputtered on (“seed layer sputtering”). Furthermore, a photolithography mask 16 is applied to the functional material 14 (FIG. 20).

[0131] In the following, the vias/breakthroughs 12 are galvanically filled with the metallic material 13. Metallic material 13 is also partially applied to the top side of the functional material 14 in the spaces between the photolithography mask 16.

[0132] The photolithography mask 16 is subsequently removed. Furthermore, the sacrificial layer or seed layer is also partially removed again, for example by etching (FIG. 21).

[0133] In a final step, the carrier material 10 is again thinned out on the bottom side by backgrinding or etching (FIG. 22).

[0134] FIGS. 23 to 28 show an alternative method for producing a component 1. Preferably, in the following method a component 1 with a silicon carrier layer 2 is produced.

[0135] In a first step, a carrier material 10 is provided for forming the carrier layer 2 described above (FIG. 23). Preferably, the carrier material 10 comprises silicon (silicon wafer).

[0136] In a next step, the feedthroughs 3 are produced. In particular, vias/breakthroughs 12 are made in the silicon wafer with the aid of a laser (FIG. 24). The breakthroughs 12 preferably have a conical shape.

[0137] In a further step, an electrically insulating layer is created by applying a corresponding material (preferably SiO.sub.2) to the carrier material 10 (not explicitly shown). In particular, the carrier material 10 is coated with the electrically insulating material. Thereby, a thin film of the electrically insulating material is formed.

[0138] In a next step, the carrier material 10 is coated with a functional material 14 to form the functional layer 5 (FIG. 25). The functional material 14 is thereby applied to the insulating layer. The functional material 14 is also applied in an inner region of the vias/breakthroughs 12.

[0139] In a further step, the vias/breakthroughs 12 are filled with a metallic material 13 (preferably copper). For this purpose, again a sacrificial layer of the metallic material 13 is first sputtered on. Furthermore, a photolithography mask 16 (photoresist) is applied to the functional material 14 (FIG. 26).

[0140] Subsequently, the vias/breakthroughs 12 are galvanically filled with the metallic material 13. The photolithography mask 16 and in parts also the sacrificial layer are then removed, for example by means of washing or etching (FIG. 27).

[0141] In a final step, the carrier material 10 is thinned out on the bottom side by backgrinding or etching (FIG. 28). In this method, too, an at least partial removal of functional material 14 is not necessary, resulting in a simplified and cost-effective process.

[0142] FIGS. 29 to 35 show an alternative method for producing a component 1. Preferably, in the following method a component 1 with a silicon carrier layer 2 is produced.

[0143] In a first step, a carrier material 10 is provided for forming the carrier layer 2 described above (FIG. 29). Preferably, the carrier material 10 comprises silicon (silicon wafer).

[0144] Subsequently, recesses 19 are created in the carrier material 10. For this purpose, photoresist 18 is applied to a top side of the carrier material 10 (FIG. 29). Subsequently, the recesses 19 are created in areas between the photoresist 18 by plasma etching (FIG. 30). In a next step, the photoresist 18 is removed again.

[0145] In a further step, an electrically insulating layer is created by applying an appropriate material (preferably SiO.sub.2) to the carrier material 10 (not explicitly shown). In particular, the carrier material 10 is coated with the electrically insulating material. A thin film of the electrically insulating material is formed.

[0146] In a next step, the carrier material 10 is coated with a functional material 14 to form the functional layer 5 (FIG. 31). For example, a thin NTC layer is applied to the carrier material 10 or to the insulating layer. Carrier material 14 is also applied into the previously created recesses 19. In particular, the recesses 19 are filled with the carrier material 14.

[0147] Subsequently, the functional material 14 is abraded on a top side of the carrier material 10. In particular, the abrading is performed in such a way that the functional material 14 preferably remains only in the previously created recesses 19, but not on the surface of the carrier material 10 (FIG. 32). In particular, the functional material 14 preferably closes flatly with the surface of the carrier material 10.

[0148] In a next step, a top side of the functional material 14 is coated with photoresist 18 (FIG. 33). Subsequent plasma etching removes a large area of the carrier material 10. In particular, the carrier material 10 remains only underneath the previously created functional material 14. In this way, vias/breakthroughs 12 are created between individual sections/columns of carrier material 10 and functional material 14 (see FIG. 34). The photoresist 18 is then removed.

[0149] In a further step, the vias/breakthroughs 12—after application of a sacrificial layer/seed layer (not explicitly shown)—are galvanically filled with a metallic material 13 (preferably copper) (FIG. 35). In this method, final thinning of the carrier layer 2 is not necessary, since the carrier material 10 has already been removed in a previous step by plasma etching.

[0150] The description of the objects disclosed herein is not limited to the individual specific embodiments. Rather, the features of the individual embodiments can be combined with one another in any desired manner, insofar as this makes technical sense.