Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component

Abstract

A method and a sensor for detecting or measuring at least one specific component among a plurality of components present in a gaseous or liquid mixture by a sensor having at least one capturing cell with a high-electron mobility transistor including a source and a drain with a grid inserted between the source and the drain, a voltage being applied between the source and the drain, and a current intensity in the capturing cell being recorded. The voltage between the source and the drain is controlled, which varies the intensity of the current, the voltage being controlled according to a voltage model predetermined by experience in order to provide a profile with an intensity which is characteristic of said at least one specific component.

Claims

1. A method of detecting or measuring at least one specific component from among several components present in a gaseous or liquid mixture by means of a sensor comprising at least one collection cell having a high-electron-mobility transistor comprising a source and a drain with a gate inserted between source and drain, comprising: a drain-to-source voltage being applied; a current intensity (Imeas) in the collection cell being recorded; the source-to-drain voltage is driven; and varying the current intensity (Imeas), the voltage being driven for different voltages according to a voltage model predetermined by experiment in order to deliver a profile with an intensity which is characteristic of said at least one specific component.

2. The method according to claim 1, wherein the profile with an intensity which is characteristic of said at least one specific component has an inversion of sign of the current intensity (Imeas) in the sensor.

3. The method according to claim 1, wherein a same transistor of the sensor is consecutively subject to different predetermined models dedicated to different specific components.

4. The method according to claim 1, wherein the predetermined voltage model is on a frequency voltage scale.

5. The method according to claim 1, wherein the components detected or measured are taken, individually or in combination, from among nitrogen monoxide, nitrogen dioxide, ammonia, carbon monoxide, carbon dioxide and oxygen, these components being contained in the gases evacuated by means of an exhaust line of a motor vehicle.

6. The method for cleaning a sensor comprising at least one collection cell having a high-electron-mobility transistor comprising a source and a drain with a gate inserted between the source and the drain, the sensor operating according to a method for detecting or measuring at least one component specific to several components present in a gaseous or liquid mixture, according to claim 1, wherein a polarization voltage is applied between at least two of the elements between the source, the drain and the gate or by an electrode inserted successively between two of the elements from among the source, the drain and the gate, the polarization voltage or the voltage of the electrode being predetermined in order to release the ions of said at least one specific component retained on the gate of the sensor.

7. A sensor for detecting or measuring at least one specific component from among several components present in a gaseous or liquid mixture, the sensor comprising: at least one collection cell having a high-electron-mobility transistor comprising a source and a drain with a gate inserted between the source and the drain; the sensor comprising a microprocessor with means for applying a voltage between the source and the drain; means for monitoring the current intensity (Imeas) in the collection cell; the microprocessor is equipped with voltage drive means according to a voltage model for different voltages saved by storage means; means for recording the current intensity (Imeas) during application of the voltage model; and means for recognizing an intensity profile characteristic of said at least one specific component saved by the storage means.

8. The sensor according to claim 7, further comprising means for imposing a regeneration voltage between at least two of the elements from among the source, the drain and the gate or an electrode in the shape of successive slots extending successively between two of the elements from among the source, the drain and the gate and means for imposing a regeneration voltage to the electrode, the regeneration voltage being sufficient to regenerate the sensor by releasing ions of said at least one specific component retained by the sensor.

9. An assembly of at least two detection or measuring sensors, each sensor detecting a respective specific component present in a gaseous or liquid mixture, said at least two sensors are according to claim 7, each of said at least two sensors having a stored voltage drive model and a stored intensity profile which is characteristic of said at least one specific component, a selective detection of a respective component being made by each of said at least two sensors.

10. An exhaust line of an internal combustion engine of a motor vehicle, further comprising at least one sensor according to claim 7, or at least an assembly of at least two detection or measurement sensors, the gaseous or liquid mixture being formed by exhaust gases passing through the exhaust line and said at least one specific component or said at least two specific components being respectively one or more pollutants contained in the exhaust gas.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Other characteristics, aims and advantages of the present invention will become apparent on reading the following detailed description and in the light of the attached drawings given by way of non-limitative examples in which:

(2) FIG. 1 is a diagrammatic representation of an embodiment of a sensor according to the present invention, the sensor having a collection cell comprising a high-electron-mobility transistor,

(3) FIG. 2 shows current intensity curves as a function of the voltage for different components such as nitrogen monoxide NO, nitrogen dioxide NO.sub.2 and ammonia NH.sub.3,

(4) FIGS. 3 and 3a show, respectively for voltages of 2 Volts and 7 Volts as a function of time, the measured voltage for detecting nitrogen dioxide,

(5) FIGS. 4a, 4b and 4c show current curves in milliamperes as a function of response time in minutes to nitrogen monoxide for different voltages of 2, 5 and 7 Volts respectively,

(6) FIGS. 5 and 5a show preferential regeneration, in the context of the present invention, of an effective area of the sensor using a regeneration electrode,

(7) FIG. 6 shows preferential regeneration, in the context of the present invention, of the effective area of the sensor alternative to that in FIGS. 5 and 5a, the regeneration being produced by regeneration voltage.

(8) FIG. 7 shows two voltage curves obtained as a function of the thickness of the platinum layer of the gate of a sensor according to the present invention for a component in the form of hydrogen and ammonia, the voltage being representative of the sensitivity of the sensor with respect to these two elements,

(9) FIG. 8 shows several morphologies of the platinum layer forming a gate in a sensor according to the present invention.

DETAILED DESCRIPTION

(10) It should be borne in mind that the Figures are given by way of example and are not limitative of the invention. They constitute diagrammatic representations intended to facilitate understanding of the invention and are not necessarily on the scale of practical applications. In particular, the dimensions of the different elements shown are not representative of reality.

(11) Hereinafter, reference is made to all the figures in combination. When reference is made to one or more specific figure(s), these figures are taken in combination with the other figures in order to recognize the numerical references denoted.

(12) With reference to all of the figures and in particular FIG. 1, the present invention relates to a sensor 1 for detecting or measuring at least one specific component present in a gaseous or liquid mixture. The sensor 1 comprises at least one collection cell having a high-electron-mobility transistor comprising a source 2 and a drain 3 with a gate 4 inserted between the source 2 and the drain 3.

(13) A high-electron-mobility transistor supports the drain 3 and the source 2 at two opposite lateral ends. In an embodiment, between the source 2 and the drain 3 extends a nanostructured III-N semiconductive layer 5 and a layer of Al.sub.0.3G.sub.0.7N 6 or an active electrostatic interaction layer, the semiconductive layer 5 being superimposed on the layer of Al.sub.0.3Ga.sub.0.7N 6. The layer of Al.sub.0.3Ga.sub.0.7N 6 is superimposed on a layer of GaN 7.

(14) The nanostructured III-N semiconductive layer 5 supports a layer 4 or layers forming an input gate for the ions of the component(s) to be detected or measured, for example dissociated oxygen negative ions O.sup.2− for nitrogen oxides NO.sub.x or oxygen O.sub.2, creating a potential difference. This layer 4 or these layers forming an input gate, advantageously coated with a layer of oxides 10, can be platinum or tungsten.

(15) Under the layer Al.sub.0.3G.sub.0.7N 6 a channel extends connecting the source 2 and the drain 3, the channel itself being superimposed on a layer of GaN 7, acting as an insulating substrate. In FIG. 5, a layer of sapphire 11 is provided below the layer of GaN 7.

(16) The sensor 1 comprises a microprocessor with means for applying a voltage between the source 2 and the drain 3 and means for monitoring the current intensity Imeas in the collection cell. According to the present invention, the microprocessor is equipped with voltage drive means according to a voltage model saved by storage means, means for recording the current intensity Imeas during application of the voltage model and means for recognizing an intensity profile characteristic of said at least one specific component saved by the storage means.

(17) The present invention also relates to a method for detecting or measuring at least one specific component from among several components present in a gaseous or liquid mixture by means of a sensor 1 as previously described. A voltage is applied between the source 2 and the drain 3 and a current intensity Imeas in the collection cell is recorded.

(18) According to the invention, a source 2-to-drain-3 voltage is driven, varying the current intensity Imeas, the voltage being driven according to a voltage model predetermined by experiment in order to deliver an intensity profile characteristic of said at least one specific component.

(19) The same transistor of the sensor 1 can be subjected consecutively to different predetermined models dedicated to different specific components; this therefore by changing the voltages applied between the source 2 and the drain 3, voltages which were the subject of the predetermined production of a voltage model. This predetermined voltage model can be on a high-frequency voltage scale.

(20) A preferential, but non-limitative, application of the present invention is for detecting or measuring the following components, taken individually or in combination: nitrogen monoxide NO, nitrogen dioxide NO.sub.2, ammonia NH.sub.3, carbon monoxide CO, carbon dioxide CO.sub.2 and oxygen O.sub.2. These components are non-limitative and are the main contents in the gases evacuated by means of an exhaust line of a motor vehicle.

(21) FIG. 2 shows current intensity Imeas curves in milliamperes as a function of the voltage in volts for different components such as nitrogen oxide NO, nitrogen dioxide NO.sub.2 and ammonia NH.sub.3, for 15 ppm and a temperature of 300° C.

(22) The intensity profile characteristic of said at least one specific component can have an inversion of sign of the current intensity Imeas in the sensor 1. This is for example the case for the detection of a gaseous component in the exhaust line of a motor vehicle which is nitrogen monoxide or NO. The signal current for NO changes direction in the structure of the sensor 1 having a high-electron-mobility transistor but this signal change takes place only in the presence of NO and not of nitrogen dioxide NO.sub.2 or ammonia NH.sub.3.

(23) FIGS. 3 and 3a show, respectively for voltages of 2 Volts and 7 Volts, the current measured in milliamperes mA for detecting nitrogen dioxide NO.sub.2 as a function of time tin minutes. These FIGS. 3 and 3a are to be compared to FIGS. 4a, 4b and 4c relative to the current measured in milliamperes mA for detecting nitrogen monoxide NO when the sensor is subjected to nitrogen monoxide, as a function of time t in minutes, for different voltages respectively of 2, 5 and 7 Volts, the greatest variation in the current being in the form of a sudden fall occurring for 2 Volts. It can be seen that the evolution for nitrogen monoxide NO, unlike the case of the sensor in the presence of NO.sub.2 in FIG. 3 or 3a greatly depends on the polarization voltage. An inversion of the evolution passing from a fall to a rise is observed when the polarization passes from 2 to 7 Volts.

(24) The change of sign of the NO signal is thus obtained by applying different voltages between the drain 3, source 2 and also the gate 4. This makes it possible to change the reaction of the chemical surface. It was established that a voltage model can be produced for various components specifically at a component taken individually and that the production of such a model can lead to accurate detection and measurement of the component by increasing the current intensity in the sensor 1.

(25) It is possible to use the sign changes of the NO signal in order to improve the selectivity of the sensors 1 to the different gases present, for example NO.sub.2, NH.sub.3, CO, CO.sub.2, O.sub.2 etc, in the case of the components in exhaust gases of a motor vehicle.

(26) The invention also relates to an assembly of at least two detection or measuring sensors 1. Each sensor 1 detects a respective specific component present in a gaseous or liquid mixture. The two sensors 1 can be as previously described, each of said at least two sensors 1 having a stored drive voltage model and a stored intensity profile characteristic of said at least one specific component, a selective detection of a respective component being made by each of said at least two sensors 1.

(27) Such a sensor 1 has the disadvantage of becoming fouled by the deposition of particles of components on its contact surface and in particular on the gate 4 thereof or on the layer of oxides 10 covering the gate 4. In the context of the method previously described for detecting or measuring at least one specific component from among several components present in a gaseous or liquid mixture, a method of cleaning the sensor 1 having a high-electron-mobility transistor can be implemented.

(28) According to a first embodiment of the regeneration process according to the invention, a polarization voltage is applied by means of an electrode 9 inserted successively between two of the elements from among the source 2, the drain 3 and the gate 4, the voltage of the electrode 9 being predetermined in order to release the ions of said at least one specific component retained on the gate 4 by the sensor 1. This is shown in FIGS. 5 and 5a for an electrode 9.

(29) According to a second embodiment of the regeneration process according to the invention, a polarization voltage is applied between two of the elements from among the source 2, the drain 3 and the gate 4, the polarization voltage being predetermined in order to release the ions of said at least one specific component retained by the sensor 1. This is shown in FIG. 6.

(30) In FIGS. 5, 5a and 6, V+ and Mass indicate the poles of the regeneration circuit. There can be an auxiliary regeneration circuit 8a at the base of the sensor 1.

(31) With reference in particular to FIG. 1, the gate 4 comprises a body made from platinum or tungsten advantageously coated with a layer of oxides 10. A sensor 1 having a high-electron-mobility transistor can have numerous different detection mechanisms which are a function of the thickness of the gate 4, of its material and its morphology.

(32) For example, the curves in FIG. 2 showing a selectivity between NO.sub.2 and NO/NH.sub.3 have been obtained using a fine platinum layer on BGaN/GaN contacts of a Schottky diode sensor.

(33) The thickness of the platinum layer forming gate 4 can be 100 ηm in order to eliminate the presence of pores in the platinum layer, when grains form during the growth process of the BGaN surface. The thickness of the layer of the gate 4 has a significant impact on the sensitivity, 0% for 100 ηm of platinum layer for NO, NO.sub.2, NH.sub.3, compared with 20% for 15 ηm of platinum layer.

(34) It has also been noted that the measurement signal due to the presence of NH.sub.3 or NH.sub.3 signal can be inverted by changing the sign and implementing changes to the morphology and thickness of the gate 4.

(35) FIG. 7 shows two voltage curves in millivolts mV with respect to a thickness of the platinum layer of a gate 4 in nanometres ηm for hydrogen H2 and ammonia NH.sub.3 at 150° C. with 20% oxygen in argon as carrier gas. As the sensitivity of the sensor is a function of the voltage, it can be seen in FIG. 7 that the sensitivity is dependent on the thickness of the gate 4.

(36) FIG. 8 shows a different morphology of the gate 4 according to the method for producing the gate 4. The gate 4 in the form of a platinum layer can be obtained by evaporation referenced d in FIG. 8, by spraying at a first pressure referenced b, by spraying at a second pressure referenced c or coated with a layer of oxides referenced a with deposition of platinum by masking in nanopillars or other geometric structures.

(37) These modifications can be applied to all of the structures of sensors 1 having a high-electron-mobility transistor or to the gate 4 in the form of a Schottky diode in order to improve the sensitivity and the selectivity.

(38) The invention is in no way limited to the embodiments described and illustrated, which have been given merely by way of example.