CRYSTAL EFFICIENT SIC DEVICE WAFER PRODUCTION

Abstract

There is provided a method for manufacturing a SiC device wafer comprising the steps: a) slicing and polishing a SiC boule to thicker substrates compared to the usual thickness in the prior art, b) creating a device wafer on the substrate, c) removing the device wafer from the remaining substrate, d) adding SiC to the remaining substrate so that the original thickness of the substrate is essentially restored, and repeating steps b)-d). The removal of the device wafer can be made for instance by laser slicing. Advantages include that the SiC material loss is significantly decreased and the boule material used for device wafers is considerably increased, the substrates become more stable especially during high temperature processes, the warp and bow is reduced, the risk of breakage is decreased.

Claims

1. A method for manufacturing a SiC device wafer comprising the steps: a. slicing and polishing a SiC boule crystal to obtain a substrate having a first surface and a second surface opposite to the first surface; b. processing the first surface of the substrate to create a device wafer on the substrate; c. removing the device wafer, wherein the device wafer comprises a part of the substrate, and leaving the other part of the substrate as a remaining substrate, the remaining substrate still having a first surface and a second surface opposite to the first surface; d. adding SiC to the remaining substrate so that an original thickness of the substrate is essentially restored, wherein the SiC is added to the second surface and e. repeating steps (b) through (d) at least once.

2. The method according to claim 1, wherein removing the device wafer in step (c) comprises irradiating a layer in the substrate using laser light to fissure the SiC boule crystal due to a plurality of modifications occurring in a crystal structure in the layer so that the device wafer can be removed.

3. The method according to claim 1, wherein the processing of the first surface of the substrate in step (b) comprises using epitaxial growth to create the device wafer.

4. The method according to claim 1, wherein adding the SiC to the remaining substrate in step (d) comprises adding a layer of the SiC of arbitrary quality and structure, and wherein repeating steps (b) through (d) comprises repeating steps (b) through (d) no more than until the substrate from step (a) has been made into a plurality of the device wafers.

5. The method according to claim 1, wherein adding the SiC to the remaining substrate in step (d) comprises adding the SiC of such a quality and structure that the SiC can be used for the device wafer and wherein steps (b) through (d) are repeated.

6. The method according to claim 1, wherein the original thickness of the substrate provided in step (a) is in an interval 700-2000 μm.

7. The method according to claim 1, comprising polishing the substrate during step (d) or between steps (d) and (e).

8. A SiC device wafer manufactured according to the method of claim 1.

9. A method for manufacturing a plurality of SiC device wafers from an SiC boule crystal, the method comprising the steps: obtaining a substrate having an original thickness between first and second opposite surfaces by slicing the SiC boule crystal; creating a device layer for a respective one of the device wafers on the substrate by processing the first surface of the substrate; producing the respective one of the device wafers by removing the device layer and a part of the substrate and leaving a remaining part of the substrate, the remaining part of the substrate having the opposite first and second surfaces; restoring the remaining part of the substrate to the original thickness of the substrate by adding SiC to the second surface of the remaining part of the substrate; and producing at least another respective one of the wafer devices by repeating the steps of creating and producing at least once.

10. The method according to claim 9, wherein removing the device layer and the part of the substrate comprises modifying a crystal structure in a substrate layer of the substrate to fissure the SiC boule crystal by irradiating the substrate layer using laser light.

11. The method according to claim 9, wherein processing the first surface of the substrate comprises using epitaxial growth to create the device layer.

12. The method according to claim 9, wherein producing the at least another respective one of the wafer devices comprises producing the plurality of the wafer devices repeating the steps of creating, producing, and adding more than once.

13. The method according to claim 12, wherein adding the SiC to the remaining part of the substrate comprises adding an SiC layer of the SiC of arbitrary quality and structure, and wherein repeating the steps comprises repeating the steps of creating, producing, and adding no more than until the SiC boule crystal has been made into a plurality of the device wafers.

14. The method according to claim 12, wherein adding the SiC to the remaining substrate comprises adding the SiC of such a quality and structure that the added SiC can be used for one of the device wafers.

15. The method according to claim 9, wherein the original thickness of the substrate provided is in an interval 700 μm to 2000 μm.

16. The method according to claim 9, comprising polishing the substrate after slicing the SiC boule crystal.

17. The method according to claim 9, comprising polishing the substrate after adding the SiC

18. A plurality of SiC device wafers manufactured from an SiC boule crystal according to a method comprising the steps: obtaining a substrate having an original thickness between first and second opposite surfaces by slicing the SiC boule crystal; creating a device layer for a respective one of the device wafers on the substrate by processing the first surface of the substrate; producing the respective one of the device wafers by removing the device layer and a part of the substrate and leaving a remaining part of the substrate, the remaining part of the substrate having the opposite first and second surfaces; restoring the remaining part of the substrate to the original thickness of the substrate by adding SiC to the second surface of the remaining part of the substrate; and producing at least another respective one of the wafer devices by repeating the steps of creating and producing at least once.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The invention is described with reference to the following drawings in which:

[0033] FIG. 1 shows a method as commonly used in the state of the art. SiC substrates with thickness of 350 μm are manufactured from a boule crystal of SiC by slicing using e.g. a wire saw followed by polishing the substrate surfaces.

[0034] FIG. 2 shows a method according to the state of the art where a 350 μm thick substrate is utilized for the manufacture of a device wafer. A layer is added on the substrate, typically involving epitaxial growth, but other technologies may also be involved to create the layer(s) of the device. When the device wafer is ready processed, a part of the substrate is removed from the device wafer by grinding. For example, if the final device wafer should have a thickness of 100 μm, 250 μm of the original substrate wafer is removed by costly and time-consuming grinding.

[0035] FIG. 3 shows a method according to the invention where a boule crystal of SiC is sliced into substrates with a greater thickness than normally used in the art, in this case 1000 μm, followed by polishing the substrate surfaces.

[0036] FIG. 4 shows in the uppermost panel from the left to the right a method according to the invention where a 1000 μm thick substrate is used when adding a 12 μm layer with epitaxial growth to create a device wafer. A 100 μm thick device wafer is removed using laser light leaving a 912 μm thick remaining substrate, this process may be referred to as laser lift-off or laser slicing. In the second panel from above from left to right, the remaining substrate is treated to add SiC. The substrate may now be referred to as a refurbished substrate and is in this embodiment 1000 μm thick as its original thickness. Again, a 12 μm thick layer is added using epitaxial growth to create a device wafer. Another 100 μm thick device wafer is removed using laser light leaving a 912 μm thick remaining substrate. In the bottom panel, this process is repeated until the original 1000 μm thick substrate is used.

DETAILED DESCRIPTION

[0037] Before the invention is disclosed and described in detail, it is to be understood that this invention is not limited to particular compounds, configurations, method steps, substrates, and materials disclosed herein as such compounds, configurations, method steps, substrates, and materials may vary somewhat. It is also to be understood that the terminology employed herein is used for the purpose of describing particular embodiments only and is not intended to be limiting since the scope of the present invention is limited only by the appended claims and equivalents thereof.

[0038] It must be noted that, as used in this specification and the appended claims, the singular forms “a”, “an” and “the” include plural referents unless the context clearly dictates otherwise.

[0039] If nothing else is defined, any terms and scientific terminology used herein are intended to have the meanings commonly understood by those of skill in the art to which this invention pertains.

[0040] “Epitaxial” as used throughout the description and the claims denotes that the material has been manufactured with epitaxial growth, in this case epitaxial growth of SiC.

[0041] “Substrate” as used throughout the description and the claims denotes a piece of material on which a device is built up.

[0042] “Device wafer” as used throughout the description and the claims denotes a SiC wafer with processed devices on one surface and at least a part of the substrate on the opposite surface.

[0043] “Wafering loss” as used throughout the description and the claims denotes the sum of the kerf loss and the polishing loss. Kerf loss is the loss that occurs due to the sawing of the substrates and polishing loss is the loss that occurs due to polishing.

[0044] In a first aspect there is provided a method for manufacturing a SiC device wafer comprising the steps: [0045] a. slicing and polishing a SiC boule crystal to obtain a substrate having a first surface and a second surface opposite to the first surface, [0046] b. processing the first surface of the substrate, to create a device wafer on the substrate, [0047] c. removing the device wafer, the device wafer comprises a part of the substrate, leaving the other part of the substrate as a remaining substrate, said remaining substrate still having a first surface and a second surface opposite to the first surface, [0048] d. adding SiC to the remaining substrate so that the original thickness of the substrate is essentially restored, wherein the SiC is added to the second surface, [0049] e. repeating steps b)-d) at least once.

[0050] The invention minimizes the material waste in today's SiC device wafer production and increases the number of produced device wafers per grown SiC boule crystal, in some embodiments by a factor 2-3. The idea according to a first part of the invention is to use thick (>1 mm or 0.7-2 mm) substrate instead of today's 350 μm thick substrates in the device wafer fabrication. This reduces the wafering loss considerably in substrate fabrication.

[0051] A second important part of the invention is that the part of the substrate, which is not necessary for the device is removed in a late stage of the device wafer fabrication process. The removed substrate is refurbished in terms of thickness and surface finish, e.g. by growing a SiC layer on the backside and optionally CMP polishing of the front side, and used again in the device wafer fabrication process. This cycle is in one embodiment repeated until the remaining thickness of the original thick substrate is below the thickness needed for the device wafer. In this way, the number of device wafers per boule can be significantly increased.

[0052] The boule crystal can typically be 30-50 mm thick and is sliced and polished using conventional and known methods in the art. Examples include slicing by wire saw. The obtained substrates are in one embodiment, thicker than normally used today.

[0053] On the obtained substrate there is manufactured a device with commonly available methods. In one embodiment there is added at least one layer of SiC by epitaxial growth. It is also possible to subject the device wafer to various other methods in order to create the desired device. Additions are made so that the desired device can be made.

[0054] When the device has been made on the substrate, then the device as well as a part of the substrate is removed by splitting the remaining part of the substrate off using laser irradiation followed by a separation process. This is done by a known and commercially available method where a separation layer is formed at a specified depth by irradiating the second surface of the device wafer with a high power laser. The device wafer, i.e. the at least one added layer and a part of the substrate, is removed by this slicing method. Conventional laser processes are not suitable for this type of slicing because the separation layer formed by laser irradiation in conventional processes extends in the direction of the laser incident downwards from the surface. However, since SiC can be transformed into an amorphous state through decomposition by a focused laser; and since the light absorption coefficient for such an irradiated material is approx. 100,000 times larger than that of crystalline SiC, it is possible to create a separation layer parallel to the surface and relatively close to the surface, so that a thin wafer can be sliced off from a thick substrate. Such process can be applied to monocrystal ingots and wafers, regardless of the off-angle of the crystal c-axis.

[0055] After the separation, the remaining substrate is refurbished so that SiC is added to restore the substrate to its original thickness. This substrate may also be referred to as a refurbished substrate. It is an advantage to restore the thickness to the original thickness because the machinery for processing substrates in to device wafers can then easier be adapted to handle one single thickness. The substrate with the added SiC (i.e. the refurbished substrate) is subjected to the process again starting from step b), where the first surface of the substrate is processed to create a device wafer on the substrate. After removing the device wafer in step c) a new first surface is created on the remaining substrate.

[0056] In the art it is known to add new material on a substrate on the same side as the side where the device is to be made. For instance in US 20190067425 it is disclosed that SiC is applied on the opposite side compared to the side where the component is. In such a process the equipment has to be able to handle substrate with different thicknesses. Further the applied SiC has to be of sufficiently high quality so that the device wafer can be manufactured of the added SiC.

[0057] Addition of SiC of sufficiently high quality may be expensive and complicated. Thus the equipment does not have to be adapted for substrates with varying thicknesses. Further the quality of the applied SiC does not have to be as high as the standard required for the device wafer. Addition of inexpensive lower quality SiC is possible.

[0058] In one embodiment removing the device wafer in step c) is made by using laser light, wherein step c) comprises irradiating a layer in the substrate with laser so that a plurality of modifications occur in the crystal structure in the layer, and so that the crystal fissures because of the modifications in the layer, so that the device wafer can be removed. In one embodiment, a pulsed laser is used. The laser is in one embodiment focused on many points in the layer one by one so that a plurality of modifications in the crystal structure occurs. The crystal fissures where the crystal structure has been modified, i.e. in the layer. When the crystal has fissured in the layer, the device wafer can be removed. Sometimes a slight force is necessary to remove the device wafer. The device wafer includes a part of the substrate. The layer where the separation occurs is in the substrate. The plane of the layer is normally chosen to be parallel to the planes of the first and second surfaces of the substrate. The planes of the first and second surfaces are normally parallel.

[0059] In one embodiment, the processing in step b) comprises use of epitaxial growth and optionally other techniques to obtain the desired device. In one embodiment the processing of the first surface of the substrate in step b) comprises epitaxial growth and optionally other techniques to obtain the desired device wafer. Typically, several steps are required to manufacture a device wafer as desired. The step of manufacturing the device is well known and is carried out according to known methods for device manufacture.

[0060] Any suitable device can be created on the SiC substrate with known methods. Examples of the processing in step b) includes one or more selected from processing steps such as epitaxial growth, ion implantation, oxidation, dielectrics deposition, contact formation, and metallizations. Typically, several of the above processing steps are combined in step b) to create a device wafer.

[0061] In one embodiment, the layer added in step d) comprises SiC of arbitrary quality and structure, and wherein steps b)-d) are repeated no more than until the substrate from step a) has been made into device wafers. This is a way of utilizing the material in the original substrate optimally. The added SiC can be of a cheaper quality which cannot or should not be used in the device layer(s) itself but which is sufficient for a substrate. Thereby the entire or almost the entire original substrate can be utilized, which is an advantage considering the cost of the material. This refurbishing alternative comprises a fast and cost-effective growth of a low-quality layer in step d). In this case, the surface does not have to be prepared “epi-ready” and the growth can be done e.g. at high growth rate, low temperature, and without caring much about the layer quality. A poly-SiC layer could be good enough. Alternative equivalent materials are also encompassed for the addition, including materials other than SiC. The substrate refurbishing process to select for a certain fabricated device depends inter alia on the voltage class and correspondingly on the drift layer thickness. For low voltage devices (<2 kV, <20 μm drift layer) this embodiment might be more beneficial and cost effective.

[0062] In an alternative embodiment, the layer added in step d) is SiC of such a quality and structure that it can be used for a device substrate and wherein steps b)-d) are repeated. By adding SiC of sufficiently high quality it is possible to use it for the device itself. By this approach more SiC is added and device wafers can be sliced off until crystal defects or imperfections in the crystal are limiting the device yield of the device wafer. If no defects are introduced or if the crystal quality is not worsened, the process can continue forever in theory, but in practice, it is realistic to expect that the device wafer manufacturing process has to be interrupted after a period of time when imperfections in the crystal become yield limiting followed by re-starting it with a new thick substrate. In case, one wants to close the manufacturing loop, then the layer grown in step d) should be of high quality. In this case, the surface needs to be prepared “epi-ready” so that a high quality layer is grown in the substrate refurbishing process. In this case, a lot more device wafers can be produced from the original thick substrate. Limitation is the achievable quality of the refurbish-growth-process. For high voltage devices (>5 kV, >50 μm drift layer), this embodiment could be more cost effective as the used thickness of the original thick substrate is lower.

[0063] During step d) the thickness of the substrate is restored to its original value or essentially its original value because it is easier to adapt the process to a setup where the substrates are equally thick. Thus the equipment utilized does not have to be adapted to a varying thickness. A skilled person realizes that some smaller variations may be accepted in the substrate thickness and thus the word essentially should be interpreted as a certain tolerance. The substrate thickness in this context refers to the thickness after step d), i.e. a refurbished substrate. In one embodiment, the substrate thickness after step d) is within ±5% of the value of the original substrate. In another embodiment, the substrate thickness after step d) is within ±10% of the value of the original substrate. In yet another embodiment, the substrate thickness after step d) is within ±20 μm of the value of the original substrate. In a further embodiment, the substrate thickness after step d) is within ±50 μm of the value of the original substrate.

[0064] The SiC is added in step d) to the second surface.

[0065] In one embodiment, the thickness of the substrate provided in step a) is in the interval 700-2000 μm. In one embodiment it is 1000 μm or larger. Such a thickness gives a strength and stability so that it is easy to handle the substrate, especially for larger substrate, 150 mm in diameter and larger.

[0066] In one embodiment, the substrate is polished during step d) or between steps d) and e). The polishing ensures a surface of sufficiently high smoothness for the next layer(s) to be added. If a surface which is not smooth enough is the result of the substrate removal process in step c), then polishing should be used before the next layer is added. The polishing can be made after step d), or during step d) or before new SiC is added in step d), or any combination of those.

[0067] In a second aspect there is provided a SiC device wafer manufactured according to the method as described above.

[0068] The invention is now described further with reference to a particular embodiment depicted in FIGS. 3-4 and compared with the state of the art in FIGS. 1-2.

[0069] The following parameters are used for the comparison: Wafering loss per substrate wafer: 300 μm (Kerf loss per wafer: 180 μm, Polishing loss per wafer: 120 μm), Substrate wafer thickness after sawing: 470 μm, Device wafer thickness: 100 μm, Device wafer loss/substrate removal (grinding): 250 μm.

TABLE-US-00001 Substrate Device wafer Total Effective boule manufacturing: manufacturing: material thickness used Material loss # device Material loss loss per for device wafer Boule # 350 μm per boule wafers per per boule boule production size wafers (100% yield) boule (100% yield) (100% yield) (100% yield) (mm) (100% yield) (mm) (100% yield) (mm) (mm) (mm) 30 46 13.9 46 11.5 25.4 4.6 (15%) 40 61 18.7 61 15.2 33.9 6.1 (15%) 50 76 23.4 76 19.0 42.4 7.6 (15%)

[0070] Table 1 shows the material loss according to the prior art for a typical embodiment as depicted in FIGS. 1-2. The effective boule thickness used for device wafer production is only 15% of the original SiC boule.

[0071] If the present invention is used the material loss will be reduced considerably if an embodiment according to the invention as depicted in FIGS. 3-4 is used instead. The wafer thickness is 1000 μm and the device wafer loss is 80 μm per wafer due to polishing during refurbishing.

TABLE-US-00002 Substrate Device wafer Total Effective boule manufacturing: manufacturing: material thickness used Material loss # device Material loss per loss per for device wafer # 1000 μm per boule wafers per boule boule production Boule size wafers (100% yield) boule (100% yield) (100% yield) (100% yield) (mm) (100% yield) (mm) (100% yield) (mm) (mm) (mm) 30 23 7.0 138 11.0 18.0 12.0 (39.9%) 40 30 10.0 180 14.4 24.4 15.6 (39.0%) 50 38 12.0 228 18.2 30.2 19.8 (39.5%)

[0072] Table 2 shows the material loss according to the invention for an embodiment as depicted in FIGS. 3-4. As can be seen the total material loss per SiC boule is reduced by about 30% and the effective boule thickness used for device wafer production is increased to about 40%, which is a considerable advantage not least with regard to the material cost.

[0073] The total material loss per SiC boule can be even reduced by about 45%, if the kerf loss of sawing the boule into wafers can be avoided e.g. by using laser slicing for the thick substrate manufacturing. In this case, the effective boule thickness used for device wafer production is over 45%.