OPTICAL MEMS BASED INTRACRANIAL PRESSURE AND INTRACRANIAL TEMPERATURE MONITOR

Abstract

The present invention discloses an optical MEMS based intracranial pressure (ICP) and intracranial temperature (ICT) monitor, comprising: a broadband light source, a tunable optical filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, and a probe; wherein the probe comprises an ICP sensor and an ICT sensor; ICP is obtained by a depression wavelength of a reflection spectrum of the ICP sensor, the depression wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon; and ICT is obtained by a peak wavelength of a reflection spectrum of the ICT sensor, the peak wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon. The present application can precisely monitor ICP and ICT.

Claims

1. An optical MEMS based intracranial pressure (ICP) and temperature (ICT) monitor, comprising: a broadband light source, a tunable optical filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, and a probe; wherein the probe comprises an intracranial pressure (ICP) sensor and an intracranial temperature (ICT) sensor; ICP is obtained by a depression wavelength of a reflection spectrum of the ICP sensor, the depression wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon; and ICT is obtained by a peak wavelength of a reflection spectrum of the ICT sensor, the peak wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon.

2. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the optical etalon with an absolute wavelength mark is configured to generate a periodic spectrum as a ruler to measure the absolute peak or depression wavelength in the reflection spectrum of the ICP or ICT sensor.

3. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICP sensor and the ICT sensor are integrated in one probe and are connected with two single mode optical fibers in parallel.

4. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICP sensor and the ICT sensor are integrated in one probe and are connected with one single mode optical fiber in series.

5. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICP sensor is a MEMS resonator structure formed by a single mode optical fiber a MEMS membrane and a glass substrate, and a tip of the single mode optical fiber acts as a mirror; the MEMS membrane deforms slightly due to the ICP; the depression wavelength of the reflection spectrum of the ICP sensor is configured to monitor the ICP.

6. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICP sensor is a MEMS resonator structure formed by a single mode optical lensed fiber, a MEMS membrane and a glass substrate, and a tip of the single mode optical lensed fiber acts as a mirror; the MEMS membrane deforms slightly due to the ICP; the depression wavelength of the reflection spectrum of the ICP sensor is configured to monitor the ICP.

7. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICP sensor is a MEMS resonator structure formed by a single mode optical fiber collimator, a MEMS membrane and a glass substrate, and a lens plane of the single mode optical fiber collimator acts as a mirror; the MEMS membrane deforms slightly due to the ICP; the depression wavelength of the reflection spectrum of the ICP sensor is configured to monitor the ICP.

8. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICT sensor is an optical fiber Bragg grating; the peak wavelength of the reflection spectrum of the ICT sensor is configured to monitor the ICT.

9. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICT sensor is a MEMS resonator structure formed by a single mode optical fiber, a MEMS membrane and a glass substrate, and a tip of single mode optical fiber acts as a mirror; the MEMS membrane deforms slightly due to the ICT; the depression wavelength of the reflection spectrum is configured to monitor the ICT.

10. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the ICT sensor is a resonator structure formed by a single mode optical fiber, a second mirror and a glass substrate, and a tip of the single mode optical fiber acts as a mirror; a cavity length of the resonator structure changes with the ICT; the depression wavelength of the reflection spectrum is configured to monitor the ICT.

11. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the optical couplers are used to connect all optical components and sensors.

12. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the optical coupler can be replaced by an optical circulator.

13. The optical MEMS based ICP and ICT monitor of claim 1 wherein: the combination of the broadband light source and the TOF can be replaced by a tunable laser source.

14. The optical MEMS based ICP and ICT monitor of claim 1 wherein, the optical MEMS based ICP and ICT monitor is used to analyze the ICP and ICT, a group of vital signs can be obtained, the vital signs comprise at least heart rate and breathe rate.

Description

BRIEF DESCRIPTION OF THE REFERENCE AND DRAWINGS

[0027] FIG. 1 is a structural schematic diagram of an optical MEMS based ICP and ICT monitor according to an embodiment of the present disclosure.

[0028] FIG. 2 is a cross sectional view of the probe integrated with an ICP sensor and an ICT sensor based on FBG according to an embodiment of the present disclosure.

[0029] FIG. 3 is a cross sectional view of an ICP sensor with a MEMS membrane and a single mode optical fiber whose tip is used as one mirror of the MEMS resonator, according to an embodiment of the present disclosure.

[0030] FIG. 4 is a cross sectional view of an ICT sensor formed by an optical fiber Bragg grating according to an embodiment of the present disclosure.

[0031] FIG. 5A and FIG. 5B show the reflection spectrum of the ICP sensor and the reflection spectrum of the ICT sensor according to an embodiment of the present disclosure.

[0032] Reference signs in the description are as follows: [0033] 1. Broadband light source; 2. Tunable optical filter (TOF); 3. Optical etalon; 4. Optical receiver; 5. Optical coupler; 6. Probe; [0034] 61. Intracranial pressure (ICP) sensor; 62. Intracranial temperature (ICT) sensor; [0035] 611. Single mode optical fiber; 6111. Fiber tip; [0036] 612. MEMS membrane; [0037] 613. Glass tube.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0038] The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings. It should be understood that the preferred embodiments described below are merely used to illustrate and explain the present disclosure, and not intended to limit the present disclosure.

[0039] In an embodiment, as shown in FIG. 1, the schematic diagram illustrating the structure of the optical MEMS based ICP and ICT monitor provided by an embodiment of the disclosure, including:

[0040] a broadband light source 1, a tunable optical filter 2 (TOF 2), an optical etalon 3, a plurality of optical receivers 4, a plurality of optical couplers 5, and a probe 6;

[0041] wherein the probe 6 comprises an intracranial pressure (ICP) sensor 61 and an intracranial temperature (ICT) sensor 62; and

[0042] ICP is obtained by a depression wavelength of a reflection spectrum of the ICP sensor 61, the depression wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon 3;

[0043] ICT is obtained by a peak wavelength of a reflection spectrum of the ICT sensor 62, the peak wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon 3.

[0044] The optical etalon 3 with an absolute wavelength mark is configured to generate a periodic spectrum as a ruler to measure the absolute peak or depression wavelength in the reflection spectrum of the ICP or ICT sensor 62.

[0045] Specifically, the broadband light is input to the TOF 2 through the single mode optical fiber 611 and is scanned by the TOF 2, then the scanned light is separated into two optical paths by an optical coupler 5. One path of the broadband light scanned by the TOF 2 hits the ICP and ICT sensors 62 and is reflected back to two optical receivers 4 with the aid of the plurality of optical couplers 5. The peak or depression wavelength of the two reflection spectra of the ICP and ICT sensors 62 can be captured. Another path of the scanned broadband light hits the optical etalon 3 and is reflected back to an optical receiver 4 with the aid of the plurality of optical couplers 5, so that the periodic spectrum with absolute wavelength mark as a rule is received. By comparing the peak or depression wavelength with the ruler, the system can tell the wavelength. Accordingly, the parameter to be monitored is obtained.

[0046] In an embodiment, the ICP sensor 61 and the ICT sensor 62 are integrated in one probe 6; the ICP sensor 61 is a MEMS resonator structure formed by a single mode optical fiber 611, a MEMS membrane 612 and a glass tube 613, and a tip 6111 of the single mode optical fiber 611 acts as a mirror; the MEMS membrane 612 deforms slightly due to the ICP; the depression wavelength of the reflection spectrum of the ICP sensor 61 is configured to monitor the ICP; the ICT sensor 62 is an optical fiber Bragg grating; the peak wavelength of the reflection spectrum of the ICT sensor 62 is configured to monitor the ICT.

[0047] As shown in FIG. 2, a cross sectional view of the probe 6 integrated by an ICP sensor 61 and an ICT sensor 62 based on FBG. The ICP sensor 61 is a MEMS resonator structure formed by the tip 6111 of a single mode optical fiber 611, a membrane and a glass tube 613. The MEMS membrane 612 deforms along with the changes of ICP, so that the ICP sensor's 61 depression wavelength of the reflection spectrum changes. The ICT sensor 62 is formed by an optical fiber Bragg grating. The peak wavelength of the reflection spectrum of the ICT sensor 62 changes due to the ICT, which is used as the parameter indicating the ICT.

[0048] Similarity, the ICT sensor 62 is a MEMS resonator structure formed by a single mode optical fiber 611, a MEMS membrane 612 and a glass tube 613, and a tip 6111 of single mode optical fiber 611 acts as a mirror; the MEMS membrane 612 deforms slightly due to the ICT; the depression wavelength of the reflection spectrum is configured to monitor the ICT.

[0049] The ICT sensor 62 has the same structure as the ICP sensor 61 where its resonator cavity length changes with the temperature.

[0050] The ICT sensor 62 may also made of optical fiber Bragg grating, where the peak wavelength of the reflection optical spectrum of the fiber Bragg grating changes with the ICT. By monitoring the wavelength, the system can tell the ICT.

[0051] In another embodiment, as shown in FIG. 3, a cross sectional view of an ICP sensor 61 with a MEMS membrane 612 and a single mode optical fiber 611 whose tip 6111 is used as a mirror of the MEMS resonator. The glass tube 613 holds all the components. The ICP causes the MEMS membrane 612 to deform slightly, which leads to the changes of the depression wavelength in the reflection optical spectrum. By measuring the wavelength, the pressure can be determined.

[0052] In another embodiment, as shown in FIG. 4, a cross sectional view of an ICT sensor 62 with fiber Bragg grating in a single mode optical fiber 611. The ICT sensor 62 is a fiber Bragg grating with a peak shape in the reflection spectrum. When the ICT changes, the peak wavelength changes. By measuring the wavelength, the ICT can be obtained.

[0053] In an embodiment, as shown in FIG. 5A and FIG. 5B, the shapes of the reflection spectrum of the ICP sensor 61 and the reflection spectrum of the ICT sensor 62. The depression wavelength in the reflection spectrum of the ICP sensor 61 is shown in FIG. 5A. By figuring out the depression wavelength, the system can obtain the ICP to be monitored. The peak wavelength of the reflection spectrum of the ICT sensor 62 is shown in FIG. 5B. By figuring out the peak wavelength, the system can obtain the ICT to be monitored.

[0054] In an embodiment, the thermal effect of the TOF 2, the optical etalon 3 and the fiber Bragg grating can be compensated by an electronic temperature sensor.

[0055] In an embodiment, the ICP and ICT monitor, the optical coupler 5 connected to the probe 6 can be replaced by optical circulator.

[0056] In an embodiment, the combination of the broadband light source 1 and the TOF 2 can be replaced by a tunable laser source.

[0057] In other embodiment, the optical MEMS based ICP and ICT monitor provided by the present application can be used for the detection of a group of vital signs such as the heart rate, the breath rate, etc. Since the heartbeat or the breath causes the ICP and ICT changes, by analyzing the ICP and ICT, the heart rate, the breath rate, etc. can be figured out.

[0058] According to the upgrade design of the optical MEMS based ICP and ICT monitor and its probe 6, the probe 6 is integrated with an optical MEMS based ICP sensor 61, and an optical fiber Bragg grating based ICT sensor 62. All the optical components and optical sensors are connected with single mode optical fibers 611. The peak or depression wavelength of the transmission, the reflection or the interference spectrum of the sensors is a function of the ICP or ICT parameter to be monitored. The wavelength can be figured out by comparing it with the comb-liked periodic spectrum with an absolute wavelength mark of the optical etalon 3. Once the peak or depression wavelength is known, the parameter to be monitored is obtained.

[0059] The above are only preferred embodiments of the present application, not intended to limit the application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the application shall be included in the protection scope of this application.