MICRO-HOTPLATE AND MEMS GAS SENSOR

Abstract

A micro-hotplate comprises a Si substrate having a cavity and a support layer over the cavity; at least an electrode; and a heater, both provided on the support layer. The electrode surrounds the heater and the heater is disposed inside the electrode. The power efficiency of the micro-hotplate is improved.

Claims

1-8. (canceled)

9. A MEMS gas sensor comprising: a Si substrate having a cavity and a support layer over the cavity; two electrodes facing each other; one heater; two heater leads connected to both ends of said heater; and a gas sensitive layer, all on the support layer, wherein said two electrodes have a dual ring-like shape having a common opening and surround said heater, wherein said heater is disposed and folds back at plural times inside said two electrodes and forms a disclike or annular heat generating region, wherein said two heater leads are drawn out through said common opening, and wherein said gas sensitive layer covers said two electrodes.

10. The MEMS gas sensor according to claim 9, wherein said two electrodes and said heater are provided at the same height with reference to said support layer.

11. The MEMS gas sensor according to claim 9, wherein said heat generating region is disclike, and wherein said heater is provided with an arc-like portion along outer periphery of said heat generating region.

12. The MEMS gas sensor according to claim 11, further comprising two electrode leads connected to said two electrodes; and an arc-like dummy electrode, all on the support layer, wherein the outer periphery of the heat generating region is divided, along an open circle from said common opening to the common opening, into three portions by two connection points between the two electrode leads and the two electrodes, and wherein said arc-like dummy electrode is not connected to the two electrodes and is disposed along the outer periphery of the heat generating region from said common opening to one of the two connection points.

Description

BRIEF DESCRIPTION OF THE ACCOMPANYING DRAWINGS

[0017] FIG. 1 A plan view of a micro-hotplate according to an embodiment.

[0018] FIG. 2 A plan view of a micro-hotplate according to a second embodiment.

[0019] FIG. 3 A plan view of a micro-hotplate according to a modified embodiment.

[0020] FIG. 4 A plan view of a micro-hotplate according to a third embodiment.

[0021] FIG. 5 A sectional view of a MEMS gas sensor having the micro-hotplate in FIG. 1.

[0022] FIG. 6 A sectional view of a MEMS gas sensor having the micro-hotplate in FIG. 4.

[0023] FIG. 7 A plan view of a conventional micro-hotplate.

[0024] FIG. 8 A characteristic view indicating the gas sensitivity of the MEMS gas sensor having the micro-hotplate in FIG. 1.

[0025] FIG. 9 A characteristic view indicating the gas sensitivity of the MEMS gas sensor having the micro-hotplate in FIG. 2.

[0026] FIG. 10 A characteristic view indicating the gas sensitivity of the MEMS gas sensor having the conventional micro-hotplate.

[0027] The best embodiment for carrying out the invention will be described.

EMBODIMENTS

[0028] FIGS. 1 to 6 indicate micro-hotplates 2, 22, 32, 42 according to the embodiments and gas sensors 40, 45 provided with them. Micro-hotplates will be simply referred to as “hotplates” in the following. Hot-plates according to a conventional example 62 is indicated in FIG. 7. The same symbols in the embodiments in FIGS. 1 to 6 refer to the same thing, and the descriptions regarding the embodiment in FIG. 1 apply to other embodiments unless otherwise specified.

[0029] In FIG. 1, the hotplate 2 is provided on a support layer 4 on a Si substrate 15 in FIG. 5. The support layer 4 is electrically insulating and comprises, for example, three layers of Si oxide, Si nitride, and Si oxide, but the materials and structure of the support layer 4 are arbitrary. The support layer 4 is in a diaphragm-like shape covering a cavity 6 but it may be a bridge over the cavity 6. The materials for the heater 8 may be a metal such as Pt or an electrically conductive Si with dopants. The heater 8 folds back at plural times within a disclike heat generating region comprising a circle and its interior. The heater is linear between fold-back positions, and, in addition, is provided with a semi-circular arc-like portion 19 returning form a left portion to a right portion in FIG. 1. Further, both ends of the heater 8 are drawn out as a pair of heater leads 9, 9 through an opening 17 between electrodes 10, 11 to the outside of the cavity 6 and are connected to pads not shown.

[0030] Since the heat generating region including the arc-like portion 19 is disclike, the generated heat flows uniformly from the heater 8 to the side of the electrodes 10, 11. As shown in FIG. 1, the heater 8 is disposed within the heat generating region with plural fold-backs from the right to the left, and, for connecting the left end of the heater 8 to the heater lead 9, the arc-like portion 19 is provided. Since the heater leads 9, 9 can not cross the electrodes 10, 11, they are drawn out through the common opening 17.

[0031] The pair of the electrodes 10, 11 surround the heater 8 as a dual circle having the opening 17 and they face each other. Since the electrodes 10, 11 can not cross each other, there is a region where the outer electrode 11 can not be provided. Preferably, a dummy electrode 13 is provided within the region to make the heat flow from the electrodes 10, 11 to their outside more uniformly, regardless of the positions around the circle. However, the dummy electrode 13 may not be provided. The electrodes 10, 11 are connected to electrode leads 12, drawn out through the cavity 6, and connected to pads or the like not shown. On an area 14 for the gas sensitive layer, a gas sensitive layer is provided and it comprises a metal oxide semiconductor such as SnO2, In2O3, or WO3 is provided. The gas sensitive layer covers the electrodes 10, 11 and may be a thin layer or a thick layer.

[0032] FIG. 2 indicates a hotplate 22 according to a second embodiment, and the electrode 10 comprises an inner electrode 10a and an outer electrode 10b and is a dual circular electrode. In addition, between the electrodes 10a, 10b, the electrode 11 is disposed. Regarding other points, it is the same to the embodiment in FIG. 1.

[0033] A hotplate 32 (modification) in FIG. 3 has the heater 28 and the arc-like portion 29 within the heat generating region that have a different arrangement from those in FIGS. 1, 2.

[0034] FIG. 4 indicates a hotplate 42 according to a third embodiment, this hotplate has an annular heater 38, and the heater has not the arc-like portion. Regarding other points, it is the same to the embodiment in FIG. 1.

[0035] FIG. 5 indicates a gas sensor 40 including the hotplate 2 in FIG. 1; there is provided a gas sensitive layer 44 and it comprises a thin film or a thick film of metal oxide semiconductor, such as SnO2, In2O3, or WO3. In addition, the support layer 4 provided on a Si substrate 15 is indicated. Further, the heater 8 and the electrodes 10, 11 are formed at the same time with the same mask and are at the same height with reference to the support layer 14. Around the heater 8 and the electrodes 10, 11, an insulating layer 16 is provided, however, the insulating layer 16 may not be provided.

[0036] FIG. 6 indicates a gas sensor 42 including the hotplate 42 in FIG. 4; it has a ring-like gas sensitive layer 46 covering the electrodes 10, 11, and a portion of the heater 38 is exposed. Regarding other points, it is the same to the embodiment in FIG. 1.

[0037] FIG. 7 indicates a conventional micro-hotplate 62; at the inside of a ring-like heater 64, a pair of comb-teeth-like electrodes 66, 67 are provided. Regarding other points, it is the same to the embodiment in FIG. 1.

Gas Sensitivity

[0038] SnO2 paste was dispensed on the area 14 for the gas sensitive layer of a micro-hotplate. Then the paste was baked at 600 degree Celsius in air to prepare the gas sensitive layer 44 comprising a SnO2 thick film (film thickness of about 20 micro-meter) to fabricate gas sensors. These gas sensors were continuously heated to 350 degree Celsius at the gas sensitive layer, and the resistance was measured in iso-butane, ethanol, and hydrogen at 10 ppm and 30 ppm. The same power was applied to the gas sensors. FIG. 8 indicates the results of the micro-hotplate 2 in FIG. 1, FIG. 9 indicates the results of the micro-hotplate 22 in FIG. 2, and FIG. 10 indicates the results of the conventional micro-hotplate 62 in FIG. 7. The results are shown as an average of five gas sensors used for the measurement. Rs/R0 in the figures indicate the ratios of resistance between gas and air.

[0039] In FIG. 10 (conventional example), the iso-butane sensitivity was little and the ethanol sensitivity was low. In contrast to them, in the embodiments in FIGS. 8 and 9, substantial iso-butane sensitivity was generated and the ethanol sensitivity was equivalent to the hydrogen sensitivity. These facts indicate that the gas sensitive layers 44 in the embodiments were heated more efficiently at the same power than that of the conventional example. They have high ethanol sensitivity suitable for alcohol detection and have iso-butane sensitivity so that they can be applied for hydrocarbon detection.

LIST OF SYMBOLS

[0040] 2, 22, 32, 42 micro-hotplate [0041] 4 support layer [0042] 6 cavity [0043] 8,28 heater [0044] 9 heater lead [0045] 10, 11 electrode [0046] 10a, 10b electrode [0047] 12 electrode lead [0048] 13 dummy electrode [0049] 14 area for the gas sensitive layer [0050] 15 Si substrate [0051] 16 insulating layer [0052] 17 opening [0053] 19, 29 arc-like portion [0054] 38 heater [0055] 40, 45 gas sensor [0056] 44, 46 gas sensitive layer [0057] 62 micro-hotplate [0058] 64 heater [0059] 66, 67 electrode