FERROELECTRIC THIN FILM

Abstract

Provided is a thin film including Mo.sub.1-xW.sub.xTe.sub.2 stacked in a plurality of layers. The thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.

Claims

1. A thin film comprising: Mo.sub.1-xW.sub.xTe.sub.2 stacked in a plurality of layers, wherein the thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.

2. The thin film of claim 1, wherein the thin film has conductivity at the temperature higher than the threshold temperature.

3. The thin film of claim 1, wherein the thin film has a monoclinic structure at the temperature higher than the threshold temperature.

4. The thin film of claim 1, wherein the thin film has ferroelectricity at the temperature equal to or lower than the threshold temperature.

5. The thin film of claim 4, wherein a degree of polarization increases as the temperature equal to or lower than the threshold temperature decreases when x is constant.

6. The thin film of claim 1, wherein the thin film has an orthorhombic structure at the temperature equal to or lower than the threshold temperature.

7. The thin film of claim 1, wherein the threshold temperature is at least 300 K.

8. The thin film of claim 1, wherein x is at least 0.4 and less than 1 in the Mo.sub.1-xW.sub.xTe.sub.2.

9. The thin film of claim 1, wherein the threshold temperature varies when x changes in the Mo.sub.1-xW.sub.xTe.sub.2.

10. The thin film of claim 9, wherein x is 0.5 or less, and the threshold temperature increases as x increases.

11. A thin film comprising: Mo.sub.1-xW.sub.xTe.sub.2 stacked in a plurality of layers, wherein the thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has ferroelectricity at a temperature equal to or lower than a threshold temperature, and has a degree of polarization which increases as the temperature equal to or lower than the threshold temperature decreases when x is constant.

12. The thin film of claim 11, wherein the threshold temperature varies when a value of x changes in the Mo.sub.1-xW.sub.xTe.sub.2.

13. The thin film of claim 12, wherein x is 0.5 or less, and the threshold temperature increases as x increases.

14. The thin film of claim 11, wherein the thin film has a symmetric lattice structure at a temperature higher than the threshold temperature.

15. The thin film of claim 14, wherein the thin film has a monoclinic structure at the temperature higher than the threshold temperature.

16. The thin film of claim 11, wherein the thin film has an asymmetric lattice structure at the temperature equal to or lower than the threshold temperature.

17. The thin film of claim 16, wherein the thin film has an orthorhombic structure at the temperature equal to or lower than the threshold temperature.

18. The thin film of claim 11, wherein x is at least 0.4 and less than 1 in the Mo.sub.1-xW.sub.xTe.sub.2.

19. The thin film of claim 11, wherein the threshold temperature is at least 300 K.

20. The thin film of claim 11, wherein resistance of the thin film increases as temperature increases.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0008] The accompanying drawings are included to provide a further understanding of the inventive concept, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the inventive concept and, together with the description, serve to explain principles of the inventive concept. In the drawings:

[0009] FIGS. 1 to 3 are diagrams illustrating a lattice structure of a thin film according to embodiments of the inventive concept;

[0010] FIG. 4 is a graph illustrating a resistance value and lattice structure of a Mo.sub.1-xW.sub.xTe.sub.2 thin film according to temperature;

[0011] FIG. 5 is a graph illustrating a degree of polarization of a Mo.sub.0.5W.sub.0.5Te.sub.2 thin film according to temperature;

[0012] FIG. 6 is a graph illustrating a PFM analysis result according to a layer number of a Mo.sub.0.5W.sub.0.5Te.sub.2 thin film;

[0013] FIG. 7 is a graph illustrating a comparison of a degree of polarization between thin films calculated according to Equation 1;

[0014] FIG. 8 schematically illustrates a device according to Experimental Example 1;

[0015] FIG. 9 is a graph illustrating conductance of a Mo.sub.0.5W.sub.0.5Te.sub.2 thin film according to an electric field in a device according to Experimental Example 1;

[0016] FIG. 10 schematically illustrates a device according to Experimental Example 2; and

[0017] FIG. 11 is a graph illustrating conductance of a channel layer in a device according to Experimental Example 2.

DETAILED DESCRIPTION

[0018] Hereinafter, thin films according to embodiments of the inventive concept and features thereof will be described in detail.

[0019] Transition metal dichalcogenide (TMD) may have a polymorphism characteristic. For example, the TMD may have a most stable phase at a particular temperature and pressure by controlling electrical doping, chemical pressure, and/or mechanical deformation. Through this control, the TMD may exhibit various characteristics required in various fields. This control may be defined by polymorphic engineering, wherein the polymorphic engineering may be used to correct symmetry of electronic structure and lattice of the TMD. Ferroelectricity of the TMD may be controlled by correcting the symmetry of electronic structure, lattice, and thickness of the TMD through the polymorphic engineering, and the TMD of a thin film type may be provided as a ferroelectric.

[0020] FIGS. 1 to 3 are diagrams illustrating a lattice structure of a thin film according to embodiments of the inventive concept.

[0021] Referring to FIGS. 1 to 3, Mo.sub.1-xW.sub.xTe.sub.2, which is one type of TMD, may be provided as a ferroelectric thin film. The Mo.sub.1-xW.sub.xTe.sub.2 may have a polymorphism characteristic at a room temperature (e.g., 300 K). The Mo.sub.1-xW.sub.xTe.sub.2 may have various lattice structures according to a value of x. As illustrated in FIGS. 1 to 3, the Mo.sub.1-xW.sub.xTe.sub.2 stacked in a vertical direction VD may have various lattice structures by controlling temperature and the value of x. Accordingly, the Mo.sub.1-xW.sub.xTe.sub.2 may be provided as a ferroelectric by controlling temperature and the value of x.

[0022] For example, as illustrated in FIG. 1, the Mo.sub.1-xW.sub.xTe.sub.2 may have a hexagonal structure (2H structure), which is a symmetric lattice structure, at a room temperature. The 2H structure may be a centrosymmetric crystal structure having a two-fold screw inversion center. The Mo.sub.1-xW.sub.xTe.sub.2 of the 2H structure may have non-polarity and semiconductor properties. Here, x may be less than 0.1. That is, the Mo.sub.1-xW.sub.xTe.sub.2 may be a material in which portion (less than 10%) of Mo of MoTe.sub.2 is replaced with W. A symmetric structure may be maintained since only a small amount of Mo among all Mo is replaced with W.

[0023] For another example, as illustrated in FIG. 2, the Mo.sub.1-xW.sub.xTe.sub.2 may have a monoclinic structure (1T′ structure), which is a symmetric lattice structure, at a room temperature. The 1T′ structure may be a centrosymmetric crystal structure having a two-fold screw inversion center. The Mo.sub.1-xW.sub.xTe.sub.2 of the 1T′ structure may have non-polarity and conductivity. For example, the Mo.sub.1-xW.sub.xTe.sub.2 of the 1T′ structure may have conductivity equivalent to that of metal. Here, x may be at least 0.1 and less than 0.4. That is, the Mo.sub.1-xW.sub.xTe.sub.2 may be a material in which portion (about 10% to about 40%) of Mo of MoTe.sub.2 is replaced with W. Although a larger amount of Mo is replaced to W compared to the 2H structure, the Mo.sub.1-xW.sub.xTe.sub.2 may also maintain symmetry in the 1T′ structure. However, since a larger amount of W, which is metal, is included compared to the case where x is less than 0.1, the Mo.sub.1-xW.sub.xTe.sub.2 of the 1T′ structure may have conductivity.

[0024] For another example, as illustrated in FIG. 3, the Mo.sub.1-xW.sub.xTe.sub.2 may have an orthorhombic structure (T.sub.d structure), which is an asymmetric lattice structure, at a room temperature. Here, x may be at least 0.4 and less than 1. Since a majority of Mo atoms of the Mo.sub.1-xW.sub.xTe.sub.2 are replaced with W atoms having a larger size, the Mo.sub.1-xW.sub.xTe.sub.2 may lose symmetry. Accordingly, the Mo.sub.1-xW.sub.xTe.sub.2 of the T.sub.dstructure may have polarity.

[0025] The Mo.sub.1-xW.sub.xTe.sub.2 of the T.sub.d structure may exhibit P-E hysteresis as an electric field is applied thereto. When a direction of the electric field is changed, a polarization direction of the Mo.sub.1-xW.sub.xTe.sub.2 of the T.sub.d structure may be changed (e.g., reversed). Even if the electric field becomes zero, the Mo.sub.1-xW.sub.xTe.sub.2 of the T.sub.dstructure may maintain a polarization state. That is, the Mo.sub.1-xW.sub.xTe.sub.2 of the T.sub.dstructure may have ferroelectricity.

[0026] As described above, the Mo.sub.1-xW.sub.xTe.sub.2 may have non-polarity or polarity according to a particular x value and temperature. Hereinafter, a lattice structure of the Mo.sub.1-xW.sub.xTe.sub.2 according to the x value and temperature will be described with reference to FIGS. 4 and 5.

[0027] FIG. 4 is a graph illustrating a resistance value and lattice structure of a Mo.sub.1-xW.sub.xTe.sub.2 thin film according to temperature.

[0028] Referring to FIG. 4, the Mo.sub.1-xW.sub.xTe.sub.2 may have the T.sub.d structure or 1T′ structure when x have a value of 0.1 to 0.5. The T.sub.d structure may be provided at a relatively low temperature compared to the 1T′ structure. A threshold temperature Tc may be defined as a phase transition temperature at which the Mo.sub.1-xW.sub.xTe.sub.2 changes from the T.sub.d structure to the 1T′ structure or from the 1T′ structure to the T.sub.dstructure, and the threshold temperature Tc may have different values at different x values. In other words, the value of the threshold temperature may vary when x changes. For example, as illustrated in FIG. 4, the threshold temperature Tc may increase as x increases within a range of 0.1 to 0.5. In this case, the Mo.sub.1-xW.sub.xTe.sub.2 may have the T.sub.d structure at a higher temperature as the x value is closer to 0.5. This is because asymmetry of the Mo.sub.1-xW.sub.xTe.sub.2 increases as a ratio between Mo and W in the Mo.sub.1-xW.sub.xTe.sub.2 is closer to 1:1. On the contrary, although not illustrated, the threshold temperature Tc may decrease as x increases when W is higher than Mo (i.e., x is larger than 0.5).

[0029] The Mo.sub.1-xW.sub.xTe.sub.2 may have the T.sub.d structure (i.e., asymmetric lattice structure) at a temperature equal to or lower than the threshold temperature Tc. Therefore, the Mo.sub.1-xW.sub.xTe.sub.2 may have ferroelectricity at a temperature equal to or lower than the threshold temperature Tc. For example, as illustrated in FIG. 4, the threshold temperature Tc may be at least a room temperature (e.g., 300 K) when x is at least 0.4. Here, the Mo.sub.1-xW.sub.xTe.sub.2 may have the T.sub.d structure at a room structure, and thus may have ferroelectricity at a room temperature.

[0030] The Mo.sub.1-xW.sub.xTe.sub.2 may have the 1T′ structure (i.e., symmetric lattice structure) at a temperature higher than the threshold temperature Tc. Therefore, the Mo.sub.1-xW.sub.xTe.sub.2 may have conductivity equivalent to that of metal at a temperature higher than the threshold temperature Tc.

[0031] The Mo.sub.1-xW.sub.xTe.sub.2 may be a ferroelectric based on a conductive material, unlike a typical ferroelectric based on an insulating material. An insulating material-based ferroelectric may have a limitation in forming a thin film of a certain thickness or less due to mismatch between lattices and dangling bond. However, the Mo.sub.1-xW.sub.xTe.sub.2, which is a two-dimensional conductive material, may overcome the limitation of an insulating material-based ferroelectric, such as the mismatch between lattices and dangling bond. As a result, a thin film-type ferroelectric having a thin thickness may be easily formed. However, when electrons are accumulated to at least a certain degree in the Mo.sub.1-xW.sub.xTe.sub.2, the Mo.sub.1-xW.sub.xTe.sub.2 may not have ferroelectricity due to a screening effect of electrons or the like.

[0032] As the x value increases, resistance of the Mo.sub.1-xW.sub.xTe.sub.2 may reduce at the same temperature. This is because a proportion of W, which is a metal material, increases in the Mo.sub.1-xW.sub.xTe.sub.2, thus reducing the resistance of the Mo.sub.1-xW.sub.xTe.sub.2.

[0033] As temperature increases, the resistance of the Mo.sub.1-xW.sub.xTe.sub.2 may increase at the same value of x. When temperature increases, this phenomenon may occur since the Mo.sub.1-xW.sub.xTe.sub.2 phase transitions to the 1T′ structure having properties of metal, and metal has high resistance at a high temperature.

[0034] FIG. 5 is a graph illustrating a degree of polarization of a Mo.sub.0.5W.sub.0.5Te.sub.2 (i.e., x=0.5) thin film according to temperature.

[0035] Referring to FIG. 5, when x=0.5, the degree of polarization of the Mo.sub.0.5W.sub.0.5Te.sub.2 may reduce as the temperature increases within a range below the threshold temperature Tc. This is because the T.sub.d structure having polarity phase transitions to the non-polar 1T′ structure as the temperature increases, thus reducing polarity of the Mo.sub.0.5W.sub.0.5Te.sub.2. However, the Mo.sub.1-xW.sub.xTe.sub.2 may exhibit a polarization state at a room temperature (e.g., 300 K).

[0036] FIG. 6 is a graph illustrating a PFM analysis result according to a layer number of Mo.sub.0.5W.sub.0.5Te.sub.2 in a thin film. Hereinafter, ferroelectricity of the Mo.sub.0.5W.sub.0.5Te.sub.2 according to a layer number and thickness thereof will be described with reference to FIG. 6.

[0037] Referring to FIG. 6, a phase of the Mo.sub.0.5W.sub.0.5Te.sub.2 changes according to a voltage at a room temperature. When the Mo.sub.0.5W.sub.0.5Te.sub.2 has a single layer 1L along the vertical direction VD of FIG. 1, a hysteresis loop according to a voltage may not appear. In other words, although the Mo.sub.0.5W.sub.0.5Te.sub.2 has the T.sub.d structure at a room temperature (see FIG. 4), the Mo.sub.0.5W.sub.0.5Te.sub.2 of the single layer 1L may not have ferroelectricity. However, when the Mo.sub.0.5W.sub.0.5Te.sub.2 is stacked in two layers 2L or three layers 3L, the hysteresis loop according to a voltage may appear unlike the case where the Mo.sub.0.5W.sub.0.5Te.sub.2 is the single layer 1L. That is, the Mo.sub.0.5W.sub.0.5Te.sub.2 of the two layers 2L or three layers 3L may have ferroelectricity.

[0038] The Mo.sub.0.5W.sub.0.5Te.sub.2 of the single layer 1L may have a thickness (e.g., about 0.6 nm) less than about 1 nm in a stacking direction of the Mo.sub.0.5W.sub.0.5Te.sub.2 of the two layers 2L or three layers 3L. The Mo.sub.0.5W.sub.0.5Te.sub.2 of the two layers 2L or three layers 3L may have a thickness larger than about 1 nm in the stacking direction. That is, when the thickness of the Mo.sub.0.5W.sub.0.5Te.sub.2 is at least about 1 nm, the Mo.sub.0.5W.sub.0.5Te.sub.2 may have ferroelectricity. However, when the thickness of the Mo.sub.0.5W.sub.0.5Te.sub.2 is larger than about 100 nm, the Mo.sub.0.5W.sub.0.5Te.sub.2 may not exhibit ferroelectricity within a range of a drive voltage of an electronic device such as a semiconductor device.

[0039] FIG. 7 is a graph illustrating a comparison of a degree of polarization between thin films calculated according to Equation 1.

[0040] The degree of polarization of the Mo.sub.1-xW.sub.xTe.sub.2 may be calculated through Equation 1 below.

[00001]$\begin{array}{cc}{P}_z=\left(\frac{1}{S}\right)\left(\underset{i}{.Math.}{Z}_i{R}_{i,z}+e{\int }_{V_i}{\mathrm{zn}}_e\left(x,y,z\right)\mathrm{dx}\mathrm{dy}\mathrm{dz}\right)& \left[\mathrm{Equation}1\right]\end{array}$

[0041] S may denote an area of a unit cell having a volume of V. Z.sub.i and n.sub.e(x,y,z) may respectively denote an ion charge and electron density. R.sub.i,z may denote a position of an i-th ion relative to z element in a unit cell. A value calculated through Equation 1 indicates the degree of polarization at 0 K.

[0042] Referring to FIG. 7, although WTe.sub.2- (i.e., x=1) has properties of metal, WTe.sub.2- may exhibit polarization. The degree of polarization of the WTe.sub.2- calculated according to Equation 1 is about 0.031 μC/cm.sup.2. The degree of polarization of the Mo.sub.0.5W.sub.0.5Te.sub.2 (i.e., x=0.5) may be higher than that of the WTe.sub.2. The degree of polarization of the Mo.sub.0.5W.sub.0.5Te.sub.2 calculated according to Equation 1 is about 0.062 μC/cm.sub.2. This shows that when a ratio between Mo and W is appropriately controlled, a symmetric lattice form may be destroyed, and the Mo.sub.1-xW.sub.xTe.sub.2 may have stronger polarity.

[0043] FIG. 8 schematically illustrates a device according to Experimental Example 1. FIG. 9 is a graph illustrating conductance of a Mo.sub.0.5W.sub.0.5Te.sub.2 thin film according to an electric field in a device according to Experimental Example 1. Hereinafter, a conductance change of the Mo.sub.0.5W.sub.0.5Te.sub.2 according to the electric field in the device according to Experimental Example 1 will be described.

Experimental Example 1

[0044] Referring to FIG. 8, a thin film material layer ML, which is subject to conductance measurement, is interposed between an upper electrode TE and a lower electrode BE. An upper dielectric layer TD is interposed between the thin film material layer ML and the upper electrode TE. A lower dielectric layer BD is interposed between the thin film material layer ML and the lower electrode BE. The thin film material layer ML includes a Mo.sub.0.5W.sub.0.5Te.sub.2 thin film stacked in two layers. The upper electrode TE and the lower electrode BE include graphite. The upper dielectric layer TD and the lower dielectric layer BD include hexagonal boron nitride (hBN).

[0045] An electric field is applied to the thin film material layer ML in a stacking direction by providing a voltage to the upper electrode TE and the lower electrode BE. The electric field is calculated through Equation 2 below.

[00002]$\begin{array}{cc}E=\left(\left(\frac{V_b}{d_b}\right)-\left(\frac{V_t}{d_t}\right)\right)/2& \left[\mathrm{Equation}2\right]\end{array}$

[0046] E denotes an electric field applied to the thin film material layer ML. V.sub.b denotes a voltage on the lower electrode BE, and V.sub.t denotes a voltage on the upper electrode TE. dt.sub.t denotes a thickness of the upper dielectric layer TD, and d.sub.bdenotes a thickness of the lower dielectric layer BD. A magnitude of the electric field transferred to the thin film material layer ML may be controlled by controlling V.sub.t and V.sub.b. At the same time, a current is connected to the thin film material layer ML to measure conductance in the thin film material layer ML according to a change in temperature and the electric field. The conductance change according to the temperature was measured at 1.7 K, 77 K, 300 K, 330 K, and 350 K.

[0047] Referring to FIG. 9, the thin film material layer ML has a conductance hysteresis loop according to a change in the electric field. For example, at a temperature of 1.7 K, the conductance of the thin film material layer ML increases as the electric field gradually increases from 0 (S1). However, when the electric field exceeds a particular value (about 0.08 V/nm), the conductance of the thin film material layer ML sharply reduces (S2). When the electric field is increased gradually in an opposite direction, the conductance of the thin film material layer ML increases gradually (S3), and then sharply reduces again when the electric field of the opposite direction exceeds a particular value (about −0.04 V/nm) (S4).

[0048] This shows that the thin film material layer ML is a material having ferroelectricity. Since the thin film material layer ML is electrically polarized, an electron flow in the thin film material layer ML may be interfered with by the polarization. Therefore, when an external electric field is strongly applied in a direction opposite to the polarization of the thin film material layer ML, the electron flow may be facilitated, thus increasing the conductance of the thin film material layer ML (S1, S3). However, when a value of the external electric field exceeds a particular value, electric moment in the thin film material layer ML is aligned in the direction of the external electric field. Therefore, the thin film material layer ML may be polarized in a direction (i.e., direction of the external electric field) opposite to previous polarization, and the electron flow may be interfered with more seriously as the external electric field becomes stronger. As a result, when the external electric field, which exceeds a particular value, is applied, the conductance of the thin film material layer ML reduces sharply (S2, S4).

[0049] This phenomenon is more clearly observed when the temperature is lower. This is because the thin film material layer ML is closer to the symmetric 1T′ structure as the temperature increases, as described above with reference to FIG. 4. However, it may be confirmed that the thin film material layer ML including Mo.sub.0.5W.sub.0.5Te.sub.2 has polarity also at a high temperature (350 K) higher than a room temperature (e.g., 300 K).

[0050] FIG. 10 schematically illustrates a device according to Experimental Example 2. FIG. 11 is a graph illustrating conductance of a channel layer in a device according to Experimental Example 2. Hereinafter, a conductance change of the channel layer in the device according to Experimental Example 2 will be described.

Experimental Example 2

[0051] Referring to FIG. 10, the thin film material layer ML is interposed between a gate electrode GE and a channel layer CH. An upper dielectric layer TD is interposed between the thin film material layer ML and the channel layer CH. A lower dielectric layer BD is interposed between the thin film material layer ML and the gate electrode GE. The thin film material layer ML includes a Mo.sub.0.5W.sub.0.5Te.sub.2 thin film stacked in two layers. The channel layer CH includes graphene. A first electrode E1 and a second electrode E2 are connected to the channel layer CH at two ends of the channel layer CH so that the conductance of the channel layer CH may be measured.

[0052] Referring to FIGS. 10 and 11, when a gate voltage Vb is applied to the gate electrode GE, the conductance of the channel layer CH changes. This shows that the thin film material layer ML has ferroelectricity.

[0053] In detail, when a voltage is applied to the gate electrode GE, polarization occurs in the thin film material layer ML having ferroelectricity. Therefore, an electric field is applied to the channel layer CH. A magnitude of the electric field is proportional to a value (hereinafter referred to as a first value) obtained by dividing the gate voltage Vb by a distance (e.g., thickness of the lower dielectric layer BD) between the gate electrode GE and the thin film material layer ML.

[0054] For example, when the electric field of an upward direction is applied to the channel layer CH when the first value is −0.1, the conductance of the channel layer CH gradually increases as the first value becomes closer to −0.2. Here, when the first value changes back to 0, a polarization direction of the thin film material layer ML is reversed when the first value is about −0.1, and the electric field of a downward direction is applied to the channel layer CH. Therefore, the conductance of the channel layer CH reduces sharply. Thereafter, when the first value is changed back from 0 to −0.2, the polarization direction of the thin film material layer ML is reversed when the first value is about −0.1, and the electric field of an upward direction is applied to the channel layer CH. Therefore, the conductance of the channel layer CH increases sharply. When the first value changes from 0 to 0.2, the polarization direction in the thin film material layer ML is maintained constant, and thus the conductance of the channel layer CH increases regularly.

[0055] By controlling a thickness along the stacking direction and an x value in Mo.sub.1-xW.sub.xTe.sub.2, a thin film having ferroelectricity at room temperature or higher may be provided. The thin film is a ferroelectric based on a conductive material, and may overcome technical limitations pertaining to reduction of a thickness of an insulating material-based ferroelectric. As a result, refined ferroelectric thin films may be applied in various industrial fields.

[0056] Although the embodiments of the present invention have been described, it is understood that the present invention should not be limited to these embodiments but various changes and modifications can be made by one ordinary skilled in the art within the spirit and scope of the present invention as hereinafter claimed.