PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCER

Abstract

A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.

Claims

1. A method for manufacturing a Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device having a piezoelectric element located at a membrane element, the method comprising: receiving a silicon on insulator substrate comprising a first silicon layer, an oxide layer, and a second silicon layer, the first silicon layer being stacked on the oxide layer along a first direction, and the oxide layer being stacked on the second silicon layer along said first direction; exposing portions of a first surface of the second silicon layer previously covered by said oxide layer by removing exposed side portions of said first silicon layer and corresponding portions of the oxide layer, and defining a central portion comprising remaining portions of the first silicon layer and of the oxide layer; forming anchor portions for said membrane element at the exposed portions of the first surface of the second silicon layer; forming said piezoelectric element over said central portion along said first direction; and defining said membrane element by selectively removing said second layer and removing said remaining portion of the oxide from under the remaining portion of the first silicon layer, said membrane element comprising the remaining portion of the first silicon layer.

2. The method of claim 1, wherein a thickness of the first silicon layer along the first direction corresponds to a thickness of the membrane element along the first direction.

3. The method of claim 1, wherein a thickness of the first silicon layer along the first direction is less than a thickness of the membrane element along the first direction, the method further comprising: before forming said piezoelectric element, growing silicon on said remaining portion of the first silicon layer until a thickness of the remaining portion of the first silicon layer reaches said thickness of the membrane element.

4. The method of claim 3, wherein said growing silicon on said remaining portion of the first silicon layer comprises growing silicon using an epitaxial technique.

5. The method of claim 1, wherein said forming the anchor portions comprises growing silicon on said exposed portions of the first surface of the second silicon layer.

6. The method of claim 5, wherein said growing silicon on said exposed portions of the first surface of the second silicon layer comprises growing silicon using an epitaxial technique.

7. The method of claim 5, further comprising carrying out a smoothing procedure directed to obtain a substantially flat top surface made of monocrystalline silicon from the grown silicon.

8. The method of claim 7, wherein said smoothing procedure includes at least one of: a chemical mechanical polishing technique, and a high temperature hydrogen annealing technique.

9. The method of claim 1, further comprising, after forming said piezoelectric element and before removing said remaining portion of the oxide, selectively removing the remaining portion of the first silicon layer until reaching said remaining portion of the oxide.

10. The method of claim 1, wherein said first silicon layer, said second silicon layer and said anchor portions are made of monocrystalline silicon.

11. A Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device, comprising: a silicon substrate; a membrane element configured to generate and receive ultrasonic waves by oscillating, about an equilibrium position, at a resonance frequency; anchor portions fixing said membrane element to the silicon substrate, and a piezoelectric element on said membrane element, the piezoelectric element configured to: cause the membrane element to oscillate when electric signals are applied to the piezoelectric element, and generate electric signals in response to oscillations of the membrane element, wherein, the membrane element and the anchor portions are made of monocrystalline silicon.

12. The PMUT device of claim 11, wherein the anchor portions are formed of epitaxially grown monocrystalline silicon.

13. The PMUT device of claim 11, wherein the membrane element has a surface that is flush with a front surface of the silicon substrate.

14. The PMUT device of claim 11, wherein the anchor portions extend directly between the silicon substrate and the membrane element.

15. The PMUT device of claim 11, wherein the membrane element has a thickness within a range from 1 μm to 2.5 μm.

16. The PMUT device of claim 11, wherein said PMUT device is manufactured according to claim 1.

17. An electronic system, comprising: one or more Piezoelectric Micromachined Ultrasonic Transducer (PMUT) devices, each of the one or more PMUT devices including: a silicon substrate; a membrane element configured to generate and receive ultrasonic waves by oscillating, about an equilibrium position, at a resonance frequency; anchor portions fixing said membrane element to the silicon substrate, and a piezoelectric element on said membrane element, the piezoelectric element configured to: cause the membrane element to oscillate when electric signals are applied to the piezoelectric element, and generate electric signals in response to oscillations of the membrane element, wherein the membrane element and the anchor portions are made of monocrystalline silicon.

18. The system of claim 17, wherein the anchor portions are formed of epitaxially grown monocrystalline silicon.

19. The system of claim 17, further comprising: a controller communicatively coupled to the one or more PMUT devices; a memory device communicatively coupled to the one or more PMUT devices; and a power supply electrically coupled to at least one of the controller, the memory device, or the one or more PMUT devices.

20. The system of claim 17, wherein the membrane element has a surface that is flush with a front surface of the silicon substrate.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0041] These and other features and advantages of the solution according to the present disclosure will be better understood by reading the following detailed description of an embodiment thereof, provided merely by way of non-limitative example, to be read in conjunction with the attached drawings. On this regard, it is explicitly intended that the drawings are not necessarily drawn to scale (with some details thereof that can be exaggerated and/or simplified) and that, unless otherwise stated, they are simply used for conceptually illustrating the described structures and procedures. Particularly:

[0042] FIG. 1 schematically illustrates a cross section view of a PMUT device according to an embodiment of the present disclosure;

[0043] FIGS. 2A-2K illustrate main steps of a method for manufacturing the PMUT device of FIG. 1 according to a first embodiment of the present disclosure;

[0044] FIGS. 3A-3F illustrate main steps of a method for manufacturing the PMUT device of FIG. 1 according to a second embodiment of the present disclosure, and

[0045] FIG. 4 illustrates in terms of simplified blocks an electronic system comprising at least one PMUT device of FIG. 1.

DETAILED DESCRIPTION

[0046] FIG. 1 schematically illustrates a cross section view of a PMUT device, globally identified with reference 100, according to an embodiment of the present disclosure.

[0047] In the following of the present description, direction terminology (such as for example, top, bottom, higher, lower, lateral, central longitudinal, transversal, vertical) will be only used for describing the PMUT device 100 in relation to the very specific orientation illustrated in the figures, and not for describing possible specific orientation the PMUT device 100 will have during its operation.

[0048] On this regard, a reference direction system is shown including three orthogonal directions X, Y, Z.

[0049] According to an embodiment of the present disclosure, the PMUT device 100 has a circular (or substantially circular) shape (along a plane parallel to directions Y and Z). According to other embodiments of the present disclosure, the PMUT device 100 has different shapes, such as a square (or substantially square) shape, a rectangular (or substantially rectangular) shape, a triangular (or substantially triangular) shape, hexagonal (or substantially hexagonal) shape, or an octagonal (or substantially octagonal) shape.

[0050] According to an embodiment of the present disclosure, the PMUT device 100 comprises a semiconductor substrate 110 integrating the other components of the PMUT device 100 itself. According to an embodiment of the present disclosure, the semiconductor substrate 110 is a monocrystalline silicon substrate, hereinafter simply referred to as silicon substrate 110. The silicon substrate 110 of the PMUT device 100 illustrated in FIG. 1 has a front operative surface 112 and an opposite (along direction X) back operative surface 114. The front operative surface 112 and the back operative surface 114 extend parallel to directions Y and Z.

[0051] According to an embodiment of the present disclosure, the silicon substrate 110 comprises a recess 120 extending from the back operative surface 114 toward the front operative surface 112 along the direction X (but without reaching the front operative surface 112).

[0052] According to an embodiment of the present disclosure, the recess 120 defines in the silicon substrate 110 a hollow space delimited by lateral walls 122 extending substantially along the direction X. Similar considerations apply in case the lateral walls 122 are slanted with respect to the direction X.

[0053] According to an embodiment of the present disclosure, the PMUT device 100 comprises a membrane element 125 adapted to generate and receive ultrasonic waves by oscillating, about an equilibrium position, at a corresponding resonance frequency. According to an embodiment of the present disclosure, the membrane element 125 has a top surface 128 and a bottom surface 130, extending along a plane parallel to directions Y and Z.

[0054] According to an embodiment of the present disclosure, the membrane element 125 has a circular (or substantially circular) shape (along a plane parallel to directions Y and Z). According to other embodiments of the present disclosure, the membrane element 125 has different shapes, such as a square (or substantially square) shape, a rectangular (or substantially rectangular) shape, a triangular (or substantially triangular) shape, hexagonal (or substantially hexagonal) shape, or an octagonal (or substantially octagonal) shape.

[0055] According to an embodiment of the present disclosure, the bottom surface 130 of the membrane element 125 corresponds to a top surface of the hollow space defined by the recess 120.

[0056] According to an embodiment of the present disclosure, the top surface 128 of the membrane element 125 is flush with the front operative surface 112 of the silicon substrate 110.

[0057] According to an embodiment of the present disclosure, the membrane element 125 is made of the same material of the silicon substrate 110, i.e., silicon, particularly monocrystalline silicon.

[0058] According to an embodiment of the present disclosure, the membrane element 125 has a thickness (along the direction X) ranging from 1 to 2.5 μm, and in some embodiments, between 1.5 to 2 μm.

[0059] According to an embodiment of the present disclosure, the membrane element 125 is connected (i.e., fixed) to the silicon substrate 110 by means of anchor portions 135 made of the same material of the silicon substrate 110, i.e., silicon, particularly monocrystalline silicon. The anchor portions 135 are located in portions of the silicon substrate 110 at the intersection between the lateral walls 122 of the recess 120 and the bottom surface 130 of the membrane element 125.

[0060] According to an embodiment of the present disclosure, a vent hole 140 is provided in a central portion of the membrane element 125 for allowing air to discharge when the membrane element 125 is oscillates.

[0061] According to an embodiment of the present disclosure, the PMUT device 100 comprises a piezoelectric element 150 located on the top surface 128 of the membrane element 125. According to an embodiment of the present disclosure, the piezoelectric element 150 has a circular (or substantially circular) shape (along a plane parallel to directions Y and Z), and surrounds the vent hole 140. According to other embodiments of the present disclosure, the piezoelectric element 150 has different shapes, such as a square (or substantially square) shape, a rectangular (or substantially rectangular) shape, a triangular (or substantially triangular) shape, hexagonal (or substantially hexagonal) shape, or an octagonal (or substantially octagonal) shape.

[0062] According to an embodiment of the present disclosure, the piezoelectric element 150 comprises a layer of piezoelectric material 155, e.g., comprising aluminum nitride, between a first layer 160 and a second layer 162 made of conductive material, such as molybdenum. The first layer 160 and the second layer 162 form electrodes of the piezoelectric element 150 across which: [0063] electric signals can be applied for causing oscillations of the membrane element 125 (when the PMUT device 100 operates as a transmitter), and [0064] electric signals can be generated in response to oscillations of the membrane element 125 (when the PMUT device 100 operates as a receiver).

[0065] According to an embodiment of the present disclosure, the piezoelectric element 150 is covered with a passivation layer 170, e.g., comprising aluminum nitride.

[0066] In order to access the PMUT device 100 for applying input electric signals thereto and for reading electric signals therefrom, according to an embodiment of the present disclosure, a contact element 180 is provided to electrically contact the first layer 160 of conductive material, and a contact element 182 is provided to electrically contact the second layer 162 of conductive material. According to an embodiment of the present disclosure, the contact elements 180, 182 are made of a highly conductive material, such as gold, aluminum or aluminum-copper.

[0067] FIGS. 2A-2K illustrate main steps of a method for manufacturing the PMUT device 100 of FIG. 1 according to a first embodiment of the present disclosure.

[0068] Making reference to FIG. 2A, the manufacturing process according to this embodiment of the present disclosure starts by providing as starting substrate a Silicon-On-Insulator substrate 200 comprising layers stacked on top of each other along the direction X. Starting from the top and then proceeding along the direction X toward the bottom, the Silicon-On-Insulator substrate 200 comprises an active layer—hereinafter referred to as device layer 202—, a buried oxide layer—hereinafter referred to as box layer 204—, a support layer—hereinafter referred to as handle layer 206—and a back oxide layer 208. The device layer 202 and the handle layer 206 are made of monocrystalline silicon, while the box layer 204 and the back oxide layer 208 are made of electrically insulating silicon dioxide.

[0069] According to this embodiment of the disclosure, the thickness of the device layer 202 along the direction X is selected to correspond (for example to be substantially equal) to the desired thickness of the membrane element 125 of the PMUT device 100 (see FIG. 1), such as for example 1.5 μm.

[0070] According to an exemplary embodiment of the present disclosure, the box layer 204 has a thickness along the direction X lower than the thickness of the device layer 202, such as for example 0.5 μm.

[0071] According to an exemplary embodiment of the present disclosure, the thickness of the handle layer 206 along the direction X may range from 1000 to 400 and in some embodiments, 725 μm.

[0072] According to an embodiment of the present disclosure illustrated in FIG. 2B, the next phase of the manufacturing process comprises the deposition of an oxide layer 210 on the exposed surface of the device layer 202, for example by means of a Low pressure Chemical Vapor Deposition (LPCVD using tetraethyl orthosilicate as precursor) or by means of a thermal oxidation technique.

[0073] According to an embodiment of the present disclosure illustrated in FIG. 2C, the next phase of the manufacturing process comprises removing side portions of the oxide layer 210, the device layer 202, and the box layer 204 through wet or dry etching (based on the used oxide thickness) in such a way to leave a central portion 212 of the device layer 202 (between corresponding portions of the oxide layer 210 and the box layer 204), while laterally exposing portions of the underlying handle layer 206.

[0074] As will be better understood in the following, said central portion 212 of the device layer 202 that has not been removed will form the membrane element 125 of the finished PMUT device 100 (see FIG. 1).

[0075] The following phase of the manufacturing process according to an embodiment of the present disclosure, which is illustrated in FIG. 2D, provides for growing silicon through an epitaxial growth process from the lateral exposed portions of the handle layer 206 and from the oxide layer 210 covering the central portion 212 of the device layer 202. In this way, monocrystalline silicon portions 214 are formed above the lateral exposed portions of the handle layer 206, and a polycrystalline layer 216 is formed above the oxide layer 210 covering the central portion 212 of the device layer 202.

[0076] As will be better understood in the following, part of the monocrystalline silicon portions 214 will form the anchor portions 135 that connect the membrane element 125 to the silicon substrate 110 of the finished PMUT device 100 (see FIG. 1).

[0077] According to an embodiment of the present disclosure illustrated in FIG. 2E, the next phase of the manufacturing process provides for carry out an etching and planarization procedure directed to entirely remove the polycrystalline layer 216 to expose the underlying oxide layer 210 and to remove upper portions of the monocrystalline silicon portions 214. For example, the planarization can be carried out using a Chemical Mechanical Polishing (CMP) technique.

[0078] The following phase of the manufacturing process according to an embodiment of the present disclosure, which is illustrated in FIG. 2F, provides for removing the exposed oxide layer 210, for example by means of an etching procedure, in order to obtain a substantially flat top surface made of monocrystalline silicon, identified in figure with reference 220.

[0079] As will be better understood in the following, lateral parts of the surface 220 will correspond to the front operative surface 112 of the silicon substrate 110 of the finished PMUT device 100, while a central part of the surface 220 will correspond to the top surface 128 of the cantilevered membrane element 125 (see FIG. 1).

[0080] According to an embodiment of the present disclosure illustrated in FIG. 2G, the next phase of the manufacturing process provides for deposing on the surface 220 a first layer of conductive material 230, such as molybdenum, deposing on the first layer of conductive material 200 a layer of piezoelectric material 232, such as comprising aluminum nitride, and then deposing on the layer of piezoelectric material 232 a second layer of conductive material 234, such as molybdenum.

[0081] According to an embodiment of the present disclosure illustrated in FIG. 2H, the next phase of the manufacturing process provides for removing (e.g., through etching) patterned portions of the stack of the layers 230, 232, 234 until exposing areas of the underlying surface 220, so as to define the piezoelectric element 150 (see FIG. 1). As already described with reference to FIG. 1, the resulting piezoelectric element 150 comprises a layer of piezoelectric material 155—obtained from layer 232—between two layers made of conductive materials 161, 162—obtained from layers 230 and 234, respectively—forming the electrodes of the piezoelectric element 150.

[0082] According to an embodiment of the present disclosure, this phase further provides for covering the piezoelectric element 150 with a passivation layer 170, such as comprising aluminum nitride (see FIG. 1), and removing the back oxide layer 208, so as to expose a bottom surface 238 of the handle layer 206.

[0083] Without providing details not relevant for the understanding of the present disclosure, and well known to those skilled in the art, a contact element 180 is formed to electrically contact the first layer 160 of conductive material, and a contact element 182 is formed to electrically contact the second layer 162 of conductive material. According to an embodiment of the present disclosure, the contact elements 180, 182 are made of a highly conductive material, such as gold, aluminum or aluminum-copper.

[0084] According to an embodiment of the present disclosure illustrated in FIG. 2I, the next phase of the manufacturing process provides for creating in the central portion 212 of the device layer 202 an opening 240 until exposing the underlying box layer 204. According to an embodiment of the present disclosure, the opening 240 is obtained by applying a trench mask and then by carrying out a silicon dry etching procedure.

[0085] As will be better understood in the following, the opening 240 will define the vent hole 140 provided in a central portion of the membrane element 125 of the finished PMUT device 100 (see FIG. 1).

[0086] The following phase of the manufacturing process according to an embodiment of the present disclosure, which is illustrated in FIG. 2J, provides for carrying out a backside grinding operation directed to remove portions of the handle layer 206 from the bottom surface 238 to bring the thickness of the handle layer 206 itself along the direction X at a desired value, such as for example ranging from 300 to 400 μm, e.g., 350 μm. Once the handle layer 206 reached the desired thickness, the exposed bottom surface of the handle layer 206 corresponds to the back operative surface 114 of the semiconductor substrate 110 of the completed PMUT device 100 (see FIG. 1).

[0087] According to an embodiment of the present disclosure illustrated in FIG. 2K, the next phase of the manufacturing process provides for generating the recess 120 (see FIG. 1) from the back operative surface 114 along the direction X through a silicon dry etching procedure.

[0088] Once the remaining portion of the box layer 204 has been removed, for example with the application of hydrofluoric acid, the PMUT device 100 is obtained (see FIG. 1).

[0089] According to the embodiment of the disclosure illustrated in FIGS. 2A-2K, the membrane element 125 of the finished PMUT device 100 has been formed using a central portion 212 of the monocrystalline silicon device layer 202, which is connected to the silicon substrate 100 of the finished PMUT device 100 by anchor portions 135 obtained from monocrystalline silicon portions 214 epitaxially grown above lateral exposed portions of the handle layer 206.

[0090] The PMUT device 100 obtained with the manufacturing process illustrated in FIGS. 2A-2K has the following advantages.

[0091] Both the membrane element 125 and the anchor portions 135 are formed in the same material, i.e., monocrystalline silicon.

[0092] Since the anchor portions 135 have been formed through a homoepitaxial grown process, in which monocrystalline silicon of the anchor portions 135 is grown from monocrystalline silicon portions of the handle layer 206, the silicon substrate is not subjected to mechanical stresses, improving thus the mechanical and electrical properties of the PMUT device 100. Differently, known solutions provide for forming anchor portions by deposition of a Silicon dioxide layer followed by selective etching, or by deposition of polysilicon into trenches realized in the substrate, causing not negligible stress on the semiconductor substrate during the formation of the anchor portions (and therefore negatively influencing the reliability and efficiency of the device itself).

[0093] Moreover, since the manufacturing process illustrated in FIGS. 2A-2K started from a Silicon-On-Insulator substrate 200 having a device layer 202 with a thickness along the direction X that already correspond to the desired thickness of the membrane element 125, the thickness of the resulting membrane element 125 in the completed PMUT device 100 is very precise, and less subjected to process mismatches. As a consequence, the resonance frequency of the PMUT device 100 is more precise.

[0094] Other advantages of the present solution are that the proposed manufacturing process does not require a trimming at the end thereof, and does not require a double electric wafer sort (in line trimming on finished membrane and/or device passivation being still possible).

[0095] FIGS. 3A-3F illustrate some of the main steps of a method for manufacturing the PMUT device 100 of FIG. 1 according to a second embodiment of the present disclosure.

[0096] Making reference to FIG. 3A, the manufacturing process according to this embodiment of the present disclosure starts by providing as starting substrate a Silicon-On-Insulator substrate 300 comprising, proceeding along the direction X from top toward the bottom, a monocrystalline silicon device layer 302, a silicon dioxide box layer 304, a handle layer 306, and a silicon dioxide back oxide layer 308.

[0097] Unlike the previous embodiment of the disclosure (corresponding to FIGS. 2A-2K), according to this embodiment of the disclosure the thickness of the device layer 302 along the direction X is lower than the desired thickness of the membrane element 125 of the PMUT device 100 (see FIG. 1). For example, the thickness of the device layer 302 may be lower than 1.5 μm.

[0098] According to an exemplary embodiment of the present disclosure, the box layer 304 has a thickness along the direction X lower than the thickness of the device layer 302, such as for example lower than 0.5 μm.

[0099] According to an exemplary embodiment of the present disclosure, the thickness of the handle layer 306 along the direction X may range from 1000 to 400 μm, and in some embodiments, between 650 and 750 μm.

[0100] According to an embodiment of the present disclosure illustrated in FIG. 3B, the next phase of the manufacturing process comprises the growth of an oxide layer 310 on the exposed surface of the device layer 302, for example by means of an oxidation process or Low pressure chemical vapor deposition

[0101] According to an embodiment of the present disclosure illustrated in FIG. 3C, the next phase of the manufacturing process comprises removing side portions of the oxide layer 310, the device layer 302, and the box layer 304 through wet or dry etching in such a way to leave a central portion 312 of the device layer 302 (between corresponding portions of the oxide layer 310 and the box layer 304), while laterally exposing portions of the underlying handle layer 306.

[0102] Unlike the previous embodiment of the disclosure (corresponding to FIGS. 2A-2K), the central portion 312 of the device layer 302 that has not been removed cannot be directly used to form the membrane element 125 of the completed PMUT device 100 (see FIG. 1), because it has a thickness that is different (i.e., lower) than the desired thickness of the membrane element 125.

[0103] The next phase of the manufacturing process according to an embodiment of the present disclosure, which is illustrated in FIG. 3D, provides for growing silicon through a selective epitaxial growth process from the lateral exposed portions of the handle layer 306. According to an embodiment of the present disclosure, the selective epitaxial growth process is configured in such a way to grow silicon only from the lateral exposed portions of the handle layer 306, preventing any silicon growth over the oxide layer 310. For example, the selective epitaxial growth process can exploit silane or diclorosilane as silicon precursor and hydrochloric acid as selective agent (according with known methods reported in literature). In this way, monocrystalline silicon portions 314 are formed only above the lateral exposed portions of the handle layer 306.

[0104] According to an embodiment of the present disclosure, the selective epitaxial growth process is continued until the grown monocrystalline silicon portions 314 are substantially flush with the oxide layer 310.

[0105] Since a small portion of the oxide layer 310 is unavoidably removed during the selective epitaxial growth process depending on the process temperature and partial pressure of the gases the oxide layer 310 should be generated with a sufficiently large thickness to avoid that it is entirely removed during this phase. For example, for a selective epitaxial growth process using a temperature range of 800-1100° C., the thickness of the oxide layer 310 should in some embodiments be set in the range of 0.1-1 μm.

[0106] According to an embodiment of the present disclosure illustrated in FIG. 3E, the next phase of the manufacturing process comprises removing the oxide layer 310 to expose the central portion 312 of the device layer 302, and then growing monocrystalline silicon through an epitaxial growth process over the monocrystalline silicon portions 314 and the now exposed monocrystalline central portion 312. The epitaxial growth process is carried out until the thickness (along direction X) of the monocrystalline central portion 312 reaches the desired thickness of the membrane element 125 of the completed PMUT device 100 (see FIG. 1).

[0107] According to an embodiment of the present disclosure illustrated in FIG. 3F, the next phase of the manufacturing process provides for carry out a smoothing procedure directed to obtain a substantially flat top surface made of monocrystalline silicon—identified in figure with reference 320—from the grown monocrystalline silicon. According to an exemplary embodiment of the disclosure, said smoothing procedure is carried out using a Chemical Mechanical Polishing (CMP) technique and/or a high temperature hydrogen annealing technique.

[0108] According to an embodiment of the present disclosure, the (thickened) monocrystalline central portion 312 will form the membrane element 125 of the finished PMUT device 100 (see FIG. 1).

[0109] According to an embodiment of the present disclosure, part of the (thickened) monocrystalline silicon portions 314 will form the anchor portions 135 that connect the membrane element 125 to the silicon substrate 110 of the finished PMUT device 100 (see FIG. 1).

[0110] According to an embodiment of the present disclosure, lateral parts of the surface 320 will correspond to the front operative surface 112 of the silicon substrate 110 of the finished PMUT device 100, while a central part of the surface 320 will correspond to the top surface 128 of the cantilevered membrane element 125 (see FIG. 1).

[0111] From now on, the manufacturing process will proceed in the same way as in the embodiment of the disclosure illustrated in FIGS. 2A-2K, and therefore no details will be provided for the sake of conciseness.

[0112] Briefly, the piezoelectric element 150 and the contact elements 180, 182 are formed. Then, an opening for the definition of the vent hole 140 is opened, and a backside grinding operation is carried out for removing portions of the handle layer 306. At this point, the recess 120 is generated, the remaining portion of the box layer 304 is removed, and the PMUT device 100 is obtained (see FIG. 1).

[0113] According to the embodiment of the disclosure illustrated in FIGS. 3A-3F, the membrane element 125 of the finished PMUT device 100 has been formed epitaxially growing monocrystalline silicon over a central portion 312 of the monocrystalline silicon device layer 302, with the membrane element that is connected to the silicon substrate 100 of the finished PMUT device 100 by anchor portions 135 obtained from monocrystalline silicon portions 314 epitaxially grown above lateral exposed portions of the handle layer 306.

[0114] The PMUT device 100 obtained with the manufacturing process illustrated in FIGS. 3A-3F has the following advantages.

[0115] Both the membrane element 125 and the anchor portions 135 are formed in the same material, i.e., monocrystalline silicon.

[0116] Since the anchor portions 135 have been formed through a homoepitaxial grown process, in which monocrystalline silicon of the anchor portions 135 is grown from monocrystalline silicon portions of the handle layer 306, the silicon substrate is not subjected to mechanical stresses, improving thus the mechanical and electrical properties of the PMUT device 100.

[0117] Moreover, the manufacturing process illustrated in FIGS. 3A-3F started from a Silicon-On-Insulator substrate 300 having a device layer 302 with a thickness along the direction X lower than desired thickness of the membrane element 125, and the thickness of the resulting membrane element 125 in the completed PMUT device 100 is reached through epitaxial growth. Therefore, possible spreads due to process mismatches are strongly reduced, because relating only to the (relatively small) epitaxially grown portion of the membrane element. As a consequence, in this case as well, the resonance frequency of the PMUT device 100 is more precise.

[0118] FIG. 4 illustrates in terms of simplified blocks an electronic system 400 (or a portion thereof) comprising at least one PMUT device 100 manufactured according to the embodiments of the disclosure described above.

[0119] According to an embodiment of the present disclosure, the electronic system 400 is adapted to be used in electronic devices such as for example personal digital assistants, computers, tablets, and smartphones.

[0120] According to an embodiment of the present disclosure, the electronic system 400 may comprise, in addition to the PMUT device 100, a controller 405, such as for example one or more microprocessors and/or one or more microcontrollers.

[0121] According to an embodiment of the present disclosure, the electronic system 400 may comprise, in addition to the PMUT device 100, an input/output device 410 (such as for example a keyboard, and/or a touch screen and/or a visual display) for generating/receiving messages/commands/data, and/or for receiving/sending digital and/or analogic signals.

[0122] According to an embodiment of the present disclosure, the electronic system 400 may comprise, in addition to the PMUT device 100, a wireless interface 415 for exchanging messages with a wireless communication network (not shown), for example through radiofrequency signals. Examples of wireless interface 415 may comprise antennas and wireless transceivers.

[0123] According to an embodiment of the present disclosure, the electronic system 400 may comprise, in addition to the PMUT device 100, a storage device 420, such as for example a volatile and/or a non-volatile memory device.

[0124] According to an embodiment of the present disclosure, the electronic system 400 may comprise, in addition to the PMUT device 100, a supply device, for example a battery 425, for supplying electric power to the electronic system 400.

[0125] According to an embodiment of the present disclosure, the electronic system 400 may comprise one or more communication channels (buses) for allowing data exchange between the PMUT device 100 and the controller 405, and/or the input/output device 410, and/or the wireless interface 415, and/or the storage device 420, and/or the battery 425, when they are present.

[0126] Naturally, in order to satisfy local and specific requirements, a person skilled in the art may apply to the solution described above many logical and/or physical modifications and alterations. More specifically, although the present disclosure has been described with a certain degree of particularity with reference to preferred embodiments thereof, it should be understood that various omissions, substitutions and changes in the form and details as well as other embodiments are possible. In particular, different embodiments of the disclosure may even be practiced without the specific details set forth in the preceding description for providing a more thorough understanding thereof; on the contrary, well-known features may have been omitted or simplified in order not to encumber the description with unnecessary details. Moreover, it is expressly intended that specific elements and/or method steps described in connection with any disclosed embodiment of the disclosure may be incorporated in other embodiments.

[0127] The various embodiments described above can be combined to provide further embodiments. These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure.