Semiconductor device comprising a composite material clip

Abstract

A semiconductor device is disclosed. In one example, the semiconductor device comprises a first semiconductor die comprising a first surface, a second surface opposite to the first surface, and a contact pad disposed on the first surface, a further contact pad spaced apart from the semiconductor die, a clip comprising a first layer of a first metallic material and a second layer of a second metallic material different from the first metallic material, wherein the first layer of the clip is connected with the contact pad, and the second layer of the clip is connected with the further contact pad.

Claims

1. A semiconductor device, comprising a first semiconductor die comprising a first surface, a second surface opposite to the first surface, and a contact pad disposed on the first surface; a further contact pad spaced apart from the semiconductor die; a clip comprising a first layer of a first metallic material and a second layer of a second metallic material different from the first metallic material; wherein the first layer of the clip is connected with the contact pad, and the second layer of the clip is connected with the further contact pad.

2. The semiconductor device according to claim 1, further comprising a first die pad; wherein the first semiconductor die is attached with its second surface to the first die pad.

3. The semiconductor device according to claim 1, wherein one or more of a material of the contact pad is similar or identical to the first metallic material; and a material of the further contact pad is similar or identical to the second metallic material.

4. The semiconductor device according to claim 1, wherein one of the first and second metallic material is Cu and the other one is Al.

5. The semiconductor device according to claim 1, wherein the further contact pad is an external lead.

6. The semiconductor device according to claim 5, wherein the clip comprises a horizontal portion and a bent portion, wherein the horizontal portion is disposed at least in part above the semiconductor die, and wherein the bent portion is disposed at least in part above the external lead.

7. The semiconductor device according to claim 2, wherein the further contact pad is an external lead, and wherein a lower surface of the external lead and a lower surface of the die pad both lie in a same plane.

8. The semiconductor device according to claim 2, wherein the further contact pad is an external lead, and wherein a lower surface of the external lead and a lower surface of the die pad are attached to a same leadframe.

9. The semiconductor device according to claim 1, further comprising a second semiconductor die comprising a first surface and a second surface opposite to the first surface; wherein the further contact pad is a contact pad disposed on the second surface of the second semiconductor die.

10. The semiconductor device according to claim 9, wherein the first layer comprises an opening disposed above the further contact pad, wherein the second layer extends into the opening in order to make contact with the further contact pad.

11. The semiconductor device according to claim 2, further comprising a second die pad, wherein the second semiconductor die is attached with the second surface to the second die pad.

12. A semiconductor device, comprising a semiconductor die comprising a first surface, a second surface opposite to the first surface, and a contact pad disposed on the first surface; a clip comprising a first layer of a first metallic material and a second layer of a second material different from the first metallic material; wherein the first layer of the clip is connected with the contact pad, and the second layer of the clip is exposed to the outside.

13. The semiconductor device according to claim 12, further comprising a die pad; wherein the semiconductor die is attached with its second surface to the die pad.

14. The semiconductor device according to claim 12, further comprising an external lead, wherein the first layer of the clip is connected with the external lead.

15. The semiconductor device according to claim 12, wherein one of the first and second materials is Cu and the other one is Al.

16. The semiconductor device according to claim 12, wherein the second material is a non-conductive material.

17. A process for connecting a clip to two different contact pads, the process comprising: providing a clip comprising a first metallic layer of a first metallic material and a second metallic layer of a second metallic material different from the first metallic material; connecting the first metallic layer to a first contact pad by a first connecting process; and connecting the second metallic layer to a second contact pad by a second connecting process.

18. The process according claim 17, wherein the second connecting process is the same as the first connecting process.

19. The process according claim 18, wherein the first and second connecting processes both comprise ultrasonic welding.

20. The process according claim 17, wherein the second connecting process is different from the first connecting process.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings are included to provide a further understanding of aspects and are incorporated in and constitute a part of this specification. The drawings illustrate aspects and together with the description serve to explain principles of aspects. Other aspects and many of the intended advantages of aspects will be readily appreciated as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale relative to each other. Like reference signs may designate corresponding similar parts.

(2) FIG. 1 comprises FIGS. 1A and 1B and shows an example of a semiconductor device according to the first aspect in a longitudinal sectional view along the length of the clip (A) and in a cross-sectional view (B), wherein in this example the second layer of the clip is connected with an external lead.

(3) FIG. 2 comprises FIGS. 2A and 2B and shows an example of a composite material clip in a perspective view (A) and in a cross-sectional side view (B), in which example the clip comprises a horizontal portion and a bent portion, wherein the bent portion is bent by an angle of 90° with respect to the horizontal portion.

(4) FIG. 3 comprises FIGS. 3A and 3B and shows an example of a composite material clip in a first perspective view (A) and a second perspective view (B), in which example the clip comprises a horizontal portion and a bent portion, wherein the bent portion is bent by an angle of 180° with respect to the horizontal portion.

(5) FIG. 4 comprises FIGS. 4A and 4B and shows an example of a composite material clip in a first perspective view (A) and a second perspective view (B), in which example the clip comprises a horizontal portion and a bent portion, wherein the bent portion is bent by an angle of 180° with respect to the horizontal portion and wherein the second layer of the clip comprises through-holes for the application of ultrasonic radiation for ultrasonic welding.

(6) FIG. 5 comprises FIG. 5A to 5C and shows an example of a semiconductor device according to the first aspect in a longitudinal sectional view along the length of the clip (A), in a first cross-sectional view through the semiconductor device in a plane of the first semiconductor die (B), and in a second cross-sectional view through the semiconductor device in a plane of the second semiconductor die (C), in which example the semiconductor device comprises two semiconductor dies, wherein the first layer of the clip is connected with the first semiconductor die and the second layer of the clip is connected with the second semiconductor die.

(7) FIG. 6 comprises FIGS. 6A and 6B and shows an example of a semiconductor device according to the second aspect in a longitudinal sectional view along the length of the clip (A) and a cross-sectional view through the semiconductor device in a plane of the semiconductor die (B), in which example the second layer of the clip is exposed to the outside.

(8) FIG. 7 shows a flow diagram of an example of a process for connecting a clip to two different contact pads according to the third aspect.

DETAILED DESCRIPTION OF THE DRAWINGS

(9) In the following detailed description, reference is made to the accompanying drawings, in which are shown by way of illustration specific aspects in which the disclosure may be practiced. In this regard, directional terminology, such as “top”, “bottom”, “front”, “back”, etc. may be used with reference to the orientation of the figures being described. Since components of described devices may be positioned in a number of different orientations, the directional terminology may be used for purposes of illustration and is in no way limiting. Other aspects may be utilized and structural or logical changes may be made without departing from the concept of the present disclosure. Hence, the following detailed description is not to be taken in a limiting sense, and the concept of the present disclosure is defined by the appended claims.

(10) FIG. 1 includes FIGS. 1A and 1B and shows an example of a semiconductor device according to the first aspect. The semiconductor device 10 of FIG. 1 comprises a semiconductor die 3 comprising a first surface, a second surface opposite to the first surface, and a contact pad 3A disposed on the first surface, and an external lead 2 spaced apart from the semiconductor die 3. The semiconductor device 10 further comprises a clip 4 comprising a first layer 4A of a first metallic material and a second layer 4B of a second metallic material different from the first metallic material. The first layer 4A of the clip 4 is connected with the contact pad 3A and the second layer 4B of the clip 4 is connected with the external lead 2.

(11) The semiconductor device 10 may further comprise a die pad 1, wherein the semiconductor die 3 can be attached with its second surface to the die pad 1. It can further be the case, such as shown in FIG. 1, that the external lead 2 and the die pad 1 are disposed in one and the same plane and in addition or alternatively that the external lead 2 and the die pad 1 are part of one and the same leadframe.

(12) The semiconductor 10 of FIG. 1 may further comprise an encapsulant 5 which encapsulates the semiconductor die 3, the die pad 1, the external lead 2 and the clip 4 as shown in FIG. 1 in such a way that the external lead 2 and the die pad 1 are exposed to the outside with their respective lower surfaces.

(13) A material of the contact pad 3A can be similar or identical to the first metallic material, and/or a material of the external lead 2 can be similar or identical to the second metallic material. In particular, it can be the case that the material of the contact pad 3A is Al and the first metallic material of the first layer 4A of the clip 4 is also Al. Furthermore, the material of the external lead 2 can be Cu and the second metallic material of the second layer 4B of the clip 4 can also be Cu.

(14) As can be seen in FIG. 1A, the clip 4 may comprise a horizontal portion 4.1 and a bent portion 4.2, wherein the horizontal portion 4.1 is disposed at least in part above the semiconductor die 3, and wherein the bent portion 4.2 is disposed at least in part above the external lead 2. In the bent portion 4.2 the clip 4 is bent back by an angle of 180° so that the second layer 4B faces the external lead 2 and the first layer 4A does not face the external lead 2.

(15) The semiconductor die 3 may comprise contact pads on both the first surface and the second surface. In particular, the semiconductor die 3 may comprise a vertical transistor (or diode) structure as, for example, an insulated gate bipolar transistor (IGBT) comprising a source contact pad 3A disposed on the first surface and a drain contact pad (not shown) disposed on the second surface, wherein the drain contact pad is electrically connected to the die pad 1 via solder layer 3B.

(16) FIG. 2 comprises FIGS. 2A and 2B and shows an example of a composite material clip according to the fourth aspect. The clip 14, as shown in FIG. 2, comprises a first lower layer 14A of a first material and a second upper layer 14B of a second material. The first layer 14A may comprise Al and the second layer 14B may comprise Cu. The clip 14 of FIG. 2 further comprises an essentially horizontal portion 14.1 and a bent portion 14.2. The bent portion 14.2 is bent downwards by an angle of 90° with respect to the horizontal portion 14.1. The clip 14 is thus shaped in a way that the first layer 14A can be connected in the horizontal portion 14.1 with a contact pad of a semiconductor die and the lower end of the bent portion 14.2 can be connected with an external lead, wherein the contact pad of the semiconductor die and the external lead can be made of different materials. As shown in the example of FIG. 2, the horizontal portion 14.1 may further comprise a lowered section 14.11, the size and dimensions of which may correspond essentially with the size and dimensions of the contact pad of the semiconductor die.

(17) FIG. 3 comprises FIGS. 3A and 3B and shows an example of a composite material clip according to the fourth aspect. The clip 24 of FIG. 3 comprises a first lower layer 24A and a second upper layer 24B which layers can be made of different materials. The clip 24 further comprises an essentially horizontal portion 24.1 and a bent portion 24.2. The bent portion 24.2 is bent back with an angle of 180° with respect to the horizontal portion 24.1. Furthermore, the bent portion 24.2 comprises a lower end portion 24.21 having lateral extensions. The horizontal portion 24.1 comprises a lowered section 24.11 intended to be contacted with, for example, a contact pad of a semiconductor die.

(18) FIG. 4 comprises FIGS. 4A and 4B and shows an example of a clip according to the fourth aspect. The clip 34, as shown in FIG. 4, comprises a first lower layer 34A and a second upper layer 34B, wherein the layers can be made of different materials. The clip 34 further comprises an essentially horizontal portion 34.1 and a bent portion 34.2, wherein the bent portion 34.2 is bent by an angle of 180° with respect to the horizontal portion 34.1. The horizontal portion 34.1 further comprises a lowered section 34.11 which is intended to make contact with a contact pad or a semiconductor die. The clip 34 further comprises through-holes 34.12 in an area of the horizontal portion 34.1 adjacent to the bent portion 34.2. The through-holes 34.12 extend through the first and second layers 34A and 34B of the clip 34 and define the area for ultrasonic welding of the clip 34 onto a chip carrier.

(19) FIG. 5 comprises FIG. 5A to 5C and shows an example of a semiconductor device according to the first aspect. The semiconductor device 50 of FIG. 5 comprises a first semiconductor die 53 comprising a first surface, a second surface opposite to the first surface, and a contact pad 53A disposed on the first surface. The semiconductor device 50 further comprises a second semiconductor die 55 comprising a first surface and a second surface opposite to the first surface and a contact pad 55A disposed on the first surface of the second semiconductor die 55. The semiconductor device 50 further comprises a clip 54 comprising a first layer 54A of a first metallic material and a second layer 54B of a second metallic material different from the first metallic material. The first layer 54A of the clip 54 is connected with the contact pad 53A of the first semiconductor die 53, and the second layer 54B of the clip 54 is connected with the contact pad 55A of the second semiconductor die 55.

(20) As shown in FIG. 5A, the first layer 54A of the clip 54 may comprise an opening 54A.1 disposed above the contact pad 55A of the second semiconductor die, wherein the second layer 54B extends into the opening 54A.1 in order to make contact with the contact pad 55A. The opening 54A.1 may have essentially the same size and dimensions as the contact pad 55A.

(21) The semiconductor device 50 may further comprise a second die pad 52, wherein the second semiconductor die 55 can be attached with its second surface to the second die pad 52.

(22) The semiconductor device 50 may as well as the first semiconductor die 53 comprise a vertical structure and may as well comprise a vertical transistor or a vertical diode structure.

(23) The semiconductor device 50 may further comprise an encapsulant 56 which may encapsulate the first and second semiconductor dies 53 and 55, the first and second die pads 51 and 52, and the clip 54, for example, in such a way that only the first and second die pads 51 and 52 are exposed to the outside at a lower surface of the semiconductor device 50.

(24) FIG. 6 comprises FIGS. 6A and 6B and shows an example of a semiconductor device according to the second aspect. The semiconductor device 60 of FIG. 6 comprises a semiconductor die 62 comprising a first surface, a second surface opposite to the first surface, and a contact pad 62A disposed on the first surface. The semiconductor device 60 further comprises a clip 64 comprising a first metallic layer 64A and a second layer 64B, wherein the first metallic layer 64A of the clip 64 is connected with the contact pad, and the second layer 64B of the clip 64 is exposed to the outside.

(25) The semiconductor device 60 may further comprise a die pad 61, wherein the semiconductor die 62 may be attached with its second surface to the die pad 61.

(26) The semiconductor device 60 may further comprise an external lead 65, wherein the first metallic layer 64A of the clip 64 may be connected with the external lead 65. The external lead 65 and the die pad 61 may be disposed in one and the same plane and/or may be part of one and the same leadframe.

(27) The semiconductor device 60 may further comprise an encapsulant 66 which may encapsulate the semiconductor die 62, the die pad 61, the clip 64, and the lead 65 in such a way that the clip 64 is exposed to the outside at an upper surface of the semiconductor device 60 and the die pad 61 and the lead 65 are exposed to the outside at a lower surface of the semiconductor device 60. Such a configuration allows double-side cooling of the semiconductor device 60 by applying respective heat sinks to the upper and lower surfaces of the semiconductor device 60.

(28) The clip 64 may comprise an essentially horizontal portion 64.1 and a bent portion 64.2, wherein the bent portion 64.2 is bent downwards by an angle in a range between 70° and 90° with respect to the horizontal portion 64.1, wherein a lower end of the first layer 64A is connected to the external lead 65, e.g. by means of an intermediate solder layer.

(29) The first lower layer 64A of the clip 64 may comprise or be made of Cu, and the second upper layer 64B of the clip 64 may comprise or be made of Al. Al is known to be robust against corrosion so that the second layer 64B may also serve as an ideal passivation or anti-corrosion or anti-oxidation protection layer at the upper surface of the semiconductor device 60. The second layer 64B of the clip 64 can also be made of a non-conductive material and can, moreover, be selected according to optimum anti-corrosion or anti-oxidation properties.

(30) FIG. 7 shows a flow diagram for illustrating a process for connecting a clip to two different contact pads.

(31) The process 70, as depicted in FIG. 7, comprises providing a clip comprising a first metallic layer and a second metallic layer (71), wherein the clip and the first and second metallic layers thereof may include any features or properties which were described above in connection with the semiconductor device according to the first and second aspect or the clip according to the fourth aspect.

(32) The process 70 of FIG. 7 further comprises connecting the first metallic layer to a first contact pad by a first connecting process (72), and connecting the second metallic layer to a second contact pad by a second connecting process (73). The second contact pad can be either an external lead or a contact pad of a semiconductor die.

(33) The first and second connecting processes can be either similar or equal or they can be different from each other. In the first case, for example, the first and second connecting processes may each comprise ultrasonic welding. In the second case, for example, one of the first and second connecting processes can be ultrasonic welding and the other one can be another connecting process like, for example, soldering.

(34) As employed in this specification, the terms “connected”, “coupled”, “electrically connected” and/or “electrically coupled” may not necessarily mean that elements must be directly connected or coupled together. Intervening elements may be provided between the “connected”, “coupled”, “electrically connected” or “electrically coupled” elements.

(35) Further, the word “over” used with regard to e.g. a material layer formed or located “over” a surface of an object may be used herein to mean that the material layer may be located (e.g. formed, deposited, etc.) “directly on”, e.g. in direct contact with, the implied surface. The word “over” used with regard to e.g. a material layer formed or located “over” a surface may also be used herein to mean that the material layer may be located (e.g. formed, deposited, etc.) “indirectly on” the implied surface with e.g. one or more additional layers being arranged between the implied surface and the material layer.

(36) Furthermore, to the extent that the terms “having”, “containing”, “including”, “with” or variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term “comprising”. That is, as used herein, the terms “having”, “containing”, “including”, “with”, “comprising” and the like are open-ended terms that indicate the presence of stated elements or features, but do not preclude additional elements or features. The articles “a”, “an” and “the” are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

(37) Moreover, the word “exemplary” is used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as “exemplary” is not necessarily to be construed as advantageous over other aspects or designs. Rather, use of the word exemplary is intended to present concepts in a concrete fashion. As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or”. That is, unless specified otherwise, or clear from context, “X employs A or B” is intended to mean any of the natural inclusive permutations. That is, if X employs A; X employs B; or X employs both A and B, then “X employs A or B” is satisfied under any of the foregoing instances. In addition, the articles “a” and “an” as used in this application and the appended claims may generally be construed to mean “one or more” unless specified otherwise or clear from context to be directed to a singular form. Also, at least one of A and B or the like generally means A or B or both A and B.

(38) Devices and methods for manufacturing devices are described herein. Comments made in connection with a described device may also hold true for a corresponding method and vice versa. For example, if a specific component of a device is described, a corresponding method for manufacturing the device may include an act of providing the component in a suitable manner, even if such act is not explicitly described or illustrated in the figures. In addition, the features of the various exemplary aspects described herein may be combined with each other, unless specifically noted otherwise.

(39) Although the disclosure has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based at least in part upon a reading and understanding of this specification and the annexed drawings. The disclosure includes all such modifications and alterations and is limited only by the concept of the following claims. In particular regard to the various functions performed by the above described components (e.g., elements, resources, etc.), the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the disclosure. In addition, while a particular feature of the disclosure may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application.