Packaging structure of a SiC MOSFET power module and manufacturing method thereof

Abstract

The invention discloses a packaging structure and manufacturing method of a SiC MOSFET module, which is composed of SiC MOSFET chips, upper DBC substrate, lower DBC substrate, ceramic interposer, silicon oxide dielectric layer, nano silver pastes, redistribution layer, through-ceramic-hole conductive metals and power terminals. The SiC MOSFET chips are connected to the lower DBC substrate using nano silver pastes in the invention. Besides, some rectangular frames are made on the ceramic interposer, and the SiC MOSFET chips are embedded in the ceramic interposer by filling dielectric materials. The upper surfaces of the chips and the ceramic interposer are covered with a conductive metal redistribution layer, and the upper and lower surfaces of the ceramic interposer are interconnected with the upper and lower DBC substrates, respectively. The power terminals are led out from the conductive copper layers of the upper and lower DBC substrates. This invention can realize the high-temperature packaging of SiC MOSFET modules. By introducing double-sided heat dissipation, the thermal performance can be improved effectively. The parasitic inductance of the module can be also reduced by using planar interconnection instead of wire bonding.

Claims

1. A packaging structure of a SiC MOSFET module comprising: SiC MOSFET chips (1) embedded with SBD, an upper DBC substrate (2), a lower DBC substrate (3), a ceramic interposer (4), a silicon oxide dielectric layer (5), nano silver paste (6), a redistribution layer (7), through-ceramic-hole conductive metal (8), a positive terminal (9a), a negative terminal (9d), a gate terminal (9b) and a common terminal (9c); wherein a source electrode (101) and a gate electrode (102) are disposed on a front side of each of the SiC MOSFET chips (1), and a drain electrode (103) is disposed on a back side of each of the SiC MOSFET chips; the drain electrode (103) of each of the SiC MOSFET chips (1) is connected to an upper copper layer (301) of the lower DBC substrate using the nano silver paste (6), and the ceramic interposer (4) is also connected to the upper copper layer (301) of the lower DBC substrate, the upper copper layer (301) of the lower DBC substrate is connected to the positive terminal (9a) of the SiC MOSFET module; the ceramic interposer (4) is provided with rectangular frames (401) and cylindrical holes (402), and the SiC MOSFET chips (1) are embedded in the rectangular frames (401); a gap (403) exists between the SiC MOSFET chips (1) and the rectangular frames (401), respectively; the gap (403) is filled with the silicon oxide dielectric layer (5), and the cylindrical via holes (402) are filled with the through-ceramic-hole conductive metal (8); the redistribution layer (7) and the silicon oxide dielectric layer (5) are disposed on an upper surface of the SiC MOSFET chips (1) and an upper surface of the ceramic interposer (4), the redistribution layer (7) and the silicon oxide dielectric layer (5) are connected to a lower copper layer (201) of the upper DBC substrate, and the redistribution layer (7) is connected to the gate electrode (9b), the common terminal (9c) and the negative terminal (9d) of the SiC MOSFET module.

2. A manufacturing method of a SiC MOSFET module, comprising the following steps: Step 1, a ceramic interposer (4) is provided on which rectangular frames (401) and cylindrical holes (402) are made; Step 2, conductive metal (8) is filled into the cylindrical holes (402) of the ceramic interposer (4); Step 3, a lower DBC substrate (3) is provided, and nano silver paste (6) is printed on a copper layer (301) on an upper side of the lower DBC substrate by means of steel screen printing, and SiC MOSFET chips (1) are mounted on the nano silver paste (6); Step 4, a positive terminal (9a) of the SiC MOSFET module is welded to the copper layer (301) of the lower DBC substrate; Step 5, the ceramic interposer (4) is bonded to the copper layer (301) on the upper side of the lower DBC substrate (3), and each of the SiC MOSFET chips (1) is embedded in a corresponding rectangular frame (401) on the ceramic adapter plate (4), and a gap (403) is formed between each of the SiC MOSFET chips (1) and corresponding rectangular frame (401); Step 6, a silicon oxide dielectric layer (5) is formed in the gap (403) and on an upper surface of the SiC MOSFET chips (1) and an upper surface of the ceramic interposer (4); Step 7, a redistribution layer (7) is formed on the upper surface of the ceramic interposer (4) and the upper surface of the SiC MOSFET chips (1), and the redistribution layer (7) is embedded in the silicon oxide dielectric layer (5); Step 8, a gate terminal (9b), a common terminal (9c) and a negative terminal (9d) of the SiC MOSFET module are welded on the upper surface of the redistribution layer (7).

3. The manufacturing method of a SiC MOSFET module according to claim 2, wherein a plurality of SiC MOSFET chips (1) are parallel arranged between an upper DBC substrate (2) and the lower DBC substrate (3) on a bridge arm, and upper and lower bridge arms are connected in series to realize the packaging of planar interconnection half bridge SiC power modules at different power levels.

Description

DESCRIPTION OF DRAWINGS

[0028] FIG. 1 is a schematic diagram of the packaging structure of a SiC MOSFET module drawn according to an embodiment of the present invention.

[0029] FIG. 2 is the schematic diagram of the structure of SiC MOSFET chip.

[0030] FIG. 3 is the schematic diagram of the packaging structure after step 1.

[0031] FIG. 4 is the schematic diagram of the packaging structure after step 3.

[0032] FIG. 5 is the schematic diagram of the packaging structure after step 4.

[0033] FIG. 6 is the schematic diagram of the packaging structure after step 5.

[0034] FIG. 7 is the schematic diagram of the packaging structure after step 6.

[0035] FIG. 8 is the schematic diagram of the packaging structure after step 8.

[0036] FIG. 9 is the schematic diagram of the packaging structure after step 9.

[0037] In combination with the appended drawings, the illustration is as follows:

TABLE-US-00001 1-SiC MOSFET chip 101-SiC MOSFET chip source electrode 102-SiC MOSFET chip gate electrode 103-SiC MOSFET chip drain electrode 2-upper DBC substrate 201-lower copper layer of the upper DBC substrate 3-lower DBC substrate 301-upper copper layer of the lower DBC substrate 4-ceramic interposer 401-rectangular frame 402-cylindrical hole 403-gap 5-silicon oxide dielectric layer 6-nano silver paste 7-redistribution layer 8-through-ceramic-hole conductive metal 9-power terminal 9A-positive terminal 9b-gate terminal 9C-common terminal 9d-negative terminal

EXEMPLARY EMBODIMENT

[0038] In order to make the invention more obvious and easy to be understood, the exemplary embodiment of the invention is described in detail in combination with the appended drawings. For convenience of illustration, the components of the structures in the appended drawings of the embodiment are not scaled according to the normal scale and thus do not represent the actual relative sizes of the structures in the embodiment.

[0039] As shown in FIG. 1, the invention discloses the structure of a SiC MOSFET module packaging, which consists of SiC MOSFET chips embedded with SBD (1), upper DBC substrate (2), lower DBC substrate (3), ceramic interposer (4), silicon oxide dielectric layer (5), nano silver paste (6), redistribution layer (7), through-ceramic-hole conductive metal (8), positive terminal (9a), negative terminal (9D) and gate terminal (9b) and a common terminal (9C). The source electrode (101) and gate electrode (102) are on the front side of the said SiC MOSFET chip (1), and the drain electrode (103) is on the back side of the SiC MOSFET chip. The drain electrode (103) of the said SiC MOSFET chip (1) is connected to the upper copper layer (301) of the said lower DBC substrate by the said nano silver solder paste (6), and the said ceramic interposer (4) is also connected to the upper copper layer (301) of the said lower DBC substrate, the upper copper layer (301) of the said lower DBC substrate is connected to a positive terminal (9a) of the module. The said ceramic interposer (4) is provided with some rectangular frames (401) and cylindrical holes (402), and the said SiC MOSFET chips (1) are embedded in the said rectangular frames (401). The redistribution layer (7) and the silicon oxide dielectric layer (5) are set on the upper surface of the said SiC MOSFET chip (1) and the upper surface of the said ceramic interposer (4), the said redistribution layer (7) and the said silicon oxide dielectric layer (5) are connected to the lower copper layer (201) of the upper DBC substrate, and the said redistribution layer (7) is connected to the gate electrode, common terminal (9c) and negative terminal (9d) of the said SiC MOSFET module (9b).

[0040] Preferably, a gap (403) exists between the said SiC MOSFET chip (1) and the said frame (401). The said gap (403) is filled with a silicon oxide dielectric layer (5), and the said cylindrical holes (402) are filled with the conductive metals (8).

[0041] The manufacturing method of the SiC MOSFET module is introduced as follows in combination with FIGS. 3-9.

[0042] Step 1, as shown in FIG. 3, a ceramic interposer (4) is provided, and rectangular frames (401) and cylindrical holes (402) are made on the ceramic adapter plate.

[0043] Step 2, conductive metals (9) are filled into the cylindrical holes (402) of the said ceramic interposer (4).

[0044] Step 3, as shown in FIG. 4, a lower DBC substrate (3) is provided, and the nano silver pastes (6) are printed on the copper layer (301) on the upper side of the lower DBC substrate by means of steel screen printing, and the SiC MOSFET chips (1) are mounted on the surface of the nano silver solder paste (6).

[0045] Step 4, as shown in FIG. 5, the positive terminal (9a) of the module is welded to the upper copper layer (301) of the lower DBC substrate.

[0046] Step 5, as shown in FIG. 6, the said ceramic interposer (4) is bonded to the copper layer (301) on the upper side of the said lower DBC substrate (3), and each SiC MOSFET chip (1) is embedded in the corresponding rectangular frame (401) on the said ceramic interposer (4), and a gap (403) is kept between each chip and frame.

[0047] Step 6, as shown in FIG. 7, a silicon oxide dielectric layer (5) is made in the said gap (403) and the upper surfaces of the said ceramic interposer (4), and the SiC MOSFET chips (1).

[0048] Step 7, a redistribution layer (7) is made on the upper surface of the said ceramic interposer (4) and the said SiC MOSFET chips (1), and the said redistribution layer is embedded in the said silicon oxide dielectric layer (5).

[0049] Step 8, a gate terminal (9b), a common terminal (9c) and a negative terminal (9d) of the module are welded to the upper surface of the said redistribution layer (7), as shown in FIG. 8.

[0050] Step 9, the upper surface of the said redistribution layer (7) is connected to the lower copper layer (201) of the upper DBC substrate. The final structure is shown in FIG. 9.

[0051] Preferably, the packaging method of the said SiC MOSFET module is characterized in that a plurality of SiC MOSFET chips can be parallel connected (1) between the upper and lower DBC substrates on each bridge arm, and the upper and lower bridge arms are connected in series to realize the packaging of planar interconnection half bridge SiC power modules at different power levels.

[0052] The above embodiment describes in detail the preferred embodiment of the invention with reference to the appended drawings. Various formal modifications or changes to the above-mentioned embodiments made by those skilled in the art, without departing from the essence of the invention, will be in the scope of protection of the invention.