Control of Trench Profile Angle in SiC Semiconductors

Abstract

A plasma etch step anisotropically etches a silicon carbide semiconductor substrate through an opening to produce a feature. The plasma etch step generates a plasma from an etchant gas mixture that includes at least one fluorine-containing component and chlorine gas. The etchant gas mixture can further include SiCl.sub.4, an oxygen-containing component, and/or inert gas component.

Claims

1. A method of plasma etching a silicon carbide semiconductor substrate to form a feature, the method comprising the steps of: providing a substrate with a mask formed thereon on a substrate support in a chamber, the mask having an opening, wherein the substrate is formed from silicon carbide; and performing a plasma etch step to anisotropically etch the substrate through the opening to produce a feature, wherein the plasma etch step comprises generating a plasma from an etchant gas mixture comprising at least one fluorine-containing component and chlorine gas.

2. The method according to claim 1, wherein the at least one fluorine-containing component comprises SF.sub.6, SiF.sub.4 or a combination thereof.

3. The method according to claim 2, wherein the at least one fluorine-containing component comprises both SF.sub.6 and SiF.sub.4.

4. The method according to claim 1, wherein the etchant gas mixture further comprises SiCl.sub.4.

5. The method according to claim 1, wherein the etchant gas mixture further comprises an oxygen-containing component.

6. The method according to claim 5, wherein the oxygen-containing component is O.sub.2 gas.

7. The method according to claim 1, wherein a flow rate of each of the at least one fluorine containing component and chlorine gas is at most 100 sccm.

8. The method according to claim 2, wherein a flow rate of SF.sub.6 is from 30 sccm to sccm and/or the flow rate of SiF.sub.4 is from 20 sccm to 98 sccm.

9. The method according to claim 4, wherein a flow rate of SiCl.sub.4 is from 5 sccm to sccm.

10. The method according to claim 5, wherein a flow rate of the oxygen-containing component is from 5 sccm to 95 sccm.

11. The method according to claim 10, wherein the flow rate of the oxygen-containing component is from 50 sccm to 80 sccm.

12. The method according to claim 1, wherein the etchant gas mixture further comprises an inert gas component.

13. The method according to claim 12, wherein the inert gas component is argon.

14. The method according to claim 12, wherein the flow rate of the inert gas component is at most 500 sccm.

15. The method according to claim 14, wherein the flow rate of the inert gas component is at least 300 sccm.

16. A method according to claim 1, wherein the plasma etch step is performed using a plasma source that supplies a power of from 800 W to 2500 W to the plasma.

17. The method according to claim 1, wherein an electrical power of from 700 W to 1400 W is applied to the substrate support during the plasma etch step.

18. The method according to claim 1, wherein the substrate support is maintained at a temperature of between 10 C. and 30 C.

19. The method according to claim 18, wherein the temperature is about 20 C.

20. The method according to claim 1, wherein a pressure within the chamber is from 2 mTorr (0.267 Pa) to 20 mTorr (2.67 Pa).

21. The method according to claim 1, wherein the chamber is cooled to a temperature of 55 C.

22. A plasma etch apparatus for plasma etching a substrate to form a feature using the method according to claim 1, the apparatus comprising: the chamber; the substrate support disposed within the chamber for supporting the substrate thereon; at least one gas inlet for introducing a gas or gas mixture into the chamber at a flow rate; a plasma generating means for sustaining a plasma in the chamber; a power supply for supplying an electrical bias power to the substrate support; and a controller configured to operate the plasma etch apparatus to generate a plasma from the etchant gas mixture comprising the at least one fluorine-containing component and the chlorine gas.

23. The apparatus according to claim 22, wherein the at least one gas inlet comprises a first gas inlet for introducing the at least one fluorine-containing component into the chamber and a second gas inlet for introducing the chlorine gas into the chamber, and the controller is configured to form the etchant gas mixture in the chamber comprising the at least one fluorine-containing component and the chlorine gas and generate the plasma from the etchant gas mixture.

24. The apparatus according to claim 23, wherein the at least one gas inlet comprises a third gas inlet for introducing SiF.sub.4 into the chamber and a fourth gas inlet for introducing SiCl.sub.4 into the chamber, and the controller is configured to form the etchant gas mixture in the chamber comprising the at least one fluorine-containing component that can comprise the SiF.sub.4, chlorine gas and SiCl.sub.4 and generate the plasma from the etchant gas mixture.

25. The apparatus according to claim 24, wherein the at least one gas inlet comprises a fifth gas inlet for introducing an oxygen-containing component into the chamber and a sixth gas inlet for introducing an inert gas component into the chamber, and the controller is configured to form the etchant gas mixture in the chamber comprising the at least one fluorine-containing component, chlorine gas, the oxygen-containing component and the inert gas component and generate the plasma from the etchant gas mixture.

Description

DESCRIPTION OF FIGURES

[0030] Aspects of methods and apparatuses in accordance with the invention will now be described with reference to the accompanying drawings, in which:

[0031] FIG. 1 is a cross-sectional schematic view of a feature with A showing a re-entrant taper and B showing a positive taper;

[0032] FIG. 2 is a plasma etch apparatus in accordance with a second embodiment of the present invention suitable for performing a method according to a first embodiment of the invention; and

[0033] FIG. 3 is a flow chart showing a method according to a first embodiment of the invention.

DETAILED DESCRIPTION

[0034] FIG. 2 shows a schematic representation of a plasma etch apparatus 20 in accordance with the second embodiment of the invention suitable for performing methods according to the first embodiment of the present invention. Plasma etching of a substrate is performed using a suitable plasma etch apparatus. The plasma etch apparatus can be an inductively coupled plasma (ICP) apparatus. However, etching can also be performed using other plasma etch systems, such as helicon, RIE or microwave type apparatus. The operation of generating a plasma within such plasma etch apparatus is well-known in the art and will not be described here other than where necessary for an understanding of the present invention.

[0035] A plasma etching tool suitable for performing the method of the present invention is an Omega Synapse ICP etch system available from SPTS Technologies Limited of Newport, UK. A plasma etch apparatus 20 typically comprises a substrate support (or platen) 22, also known as a wafer support, disposed within a chamber 23 for supporting a substrate. A bias power can be supplied to the substrate by a RF power supply 250 via an impedance matching network (not shown) and an electrode 252. Typical RF frequencies for operation of the RF power supply can be between about 380 kHz and 13.56 MHz. Process gases can be introduced into the chamber 23 via one or more gas inlets 25, 26. In one embodiment, at least six gas inlets 26 can be present. However, in the illustrated embodiment, two gas inlets 25, 26 are provided, and the gases from which the plasma is generated are introduced to the chamber 23 through the two gas inlets 25, 26. A plasma generating means 28, such as an inductive coil, can be used to generate and sustain a plasma within the chamber 23 as is known in the art (e.g. using a RF power supply and impedance matching network). In the illustrated embodiment, the plasma generating means is an RF inductive coil 28 contained within a housing 29. The gases can be removed from the chamber 23 via a pumping port 27. Also provided is a controller (not shown) which is configured to control the apparatus to perform the process sequence described herein.

[0036] An exemplary method according to a first embodiment of the present invention will be described in combination with FIGS. 1 and 3. In the exemplary method, a silicon carbide (SiC) semiconductor substrate 30 is etched to form a feature. In the exemplary method, the feature is a trench, and the substrate 30 is epitaxial silicon carbide in the form of a layer deposited on a 150 mm silicon carbide carrier wafer. In the exemplary method, the layer of epitaxial silicon carbide is approximately 1 m thick. However, other features can be formed in the method of the first embodiment of the present invention. Other wafer sizes, for example from 75 mm to 200 mm, other thicknesses of epitaxial silicon carbide and different carrier wafers can also be used in the method of the first embodiment of the present invention. Although the parameters stated below are those used for the etching of a 1 thick layer of epitaxial SiC on a 150 mm SiC wafer, they can be varied with the size of the wafer in a manner known in the art. The substrate 30 includes a patterned mask layer 32, such as a silicon dioxide (SiO.sub.2) layer or other suitable mask layer. The mask layer 32 is typically more resistant to the plasma etch conditions that the epitaxial silicon carbide layer.

[0037] In a first step 101, the substrate 30 to be etched is positioned on the substrate support 22 in a plasma etch apparatus 20 with the face to be etched facing upwards. A pre-etch can optionally be performed to prepare the substrate 30 prior to the plasma etch, for example to remove unwanted material from the open areas of the mask layer 32.

[0038] In a second step 102, a plasma etch step is performed to selectively etch the SiC substrate 30 so that the trench structure is formed. Numeral 34b represents the feature as illustrated in FIG. 1B. The plasma etch step anisotropically etches the substrate in the areas of the substrate 30 that are not covered by the mask layer 32. A bias power is applied to the platen 22 during the plasma etch step. For example, the bias power applied to the platen can be in the range of about 700 W to about 1400 W, optionally about 1300 W. This helps to impart a directionality to the species (e.g. ions) in the plasma so that the base 36b of the trench 34b is preferentially etched (rather than the sidewalls 38b of the trench).

[0039] The etch gas mixture used to generate the plasma consists of SF.sub.6, Cl.sub.2, SiF.sub.4, SiCl.sub.4, O.sub.2 and Ar gases. The flow rate of each of SF.sub.6, Cl.sub.2, SiF.sub.4, SiCl.sub.4 and O.sub.2 is at most 100 sccm. The SF.sub.6 flow rate can be from 30 sccm to 60 sccm, the SiF.sub.4 flow rate can be from 20 sccm to 98 sccm, the SiCl.sub.4 flow rate can be from 5 sccm to 95 sccm and the O.sub.2 flow rate can be from 5 sccm to 95 sccm, optionally from 50 sccm to 80 sccm. The Ar flow rate can be from 300 sccm to 500 sccm.

[0040] The present inventors have found that by controlling the F:Cl flow rate ratio, the resultant trench profile angle can be altered whilst maintaining the desired etch characteristics such as etch rate and selectivity. One of the most effective means of altering the resultant trench profile angle whilst maintaining the etch rate is by maintaining the flow rate of SF.sub.6 and Cl.sub.2 at a set value and altering the flow rate of SiF.sub.4 and SiCl.sub.4 as a means of altering the overall F:Cl ratio. By maintaining a minimum SF.sub.6 and Cl.sub.2 flow rate, the etch rate and selectivity of the plasma etch step is maintained, but the alteration of the SiF.sub.4 and SiCl.sub.4 flow rates can fine-tune the resultant trench profile angle. For example, lowering the SiCl.sub.4 flow rate and raising the SiF.sub.4 flow rate can increase the profile angle (increased towards 90), whilst raising the SiCl.sub.4 flow rate and lowering the SiF.sub.4 flow rate can decrease the profile angle (reduced from 90).

[0041] The ratio of F:Cl can be kept constant throughout the plasma etch step. Alternatively, the F:Cl ratio can be altered during the plasma etch step. Changing the F:Cl ratio can dynamically change the taper of the resultant trench, providing changes in taper as the etch progresses. This change in trench angle can reduce field-bunching, where the electric field is susceptible to concentrating at a particular location within the trench, such as at the corners of trench.

[0042] During the plasma etch step, the chamber pressure can be in the range of about 2 mTorr (0.267 Pa) to about 20 mTorr (2.67 Pa), preferably about 10 mTorr (1.33 Pa). During the plasma etch step, the plasma source power can be in the range of about 800 W to about 2500 W, optionally about 2200 W. During the plasma etch step, the bias power applied to the substrate can be a RF bias power. RF frequencies for the RF bias power can be between about 2 MHz and about 13.56 MHz. Typically, the platen 22 temperature setpoint is between about 10 C. and about 30 C., preferably about 20 C., whilst the chamber walls are cooled to a temperature of about 55 C. using water. A platen temperature of around 20 C. and a chamber wall temperature of about 55 C. is used due to the presence of chlorine in the etch gas mixture.

[0043] The plasma etch step results in the formation of a trench 34b. The trench 34b comprises a base 36b that is approximately parallel to the surface of the substrate 30 on which the mask 32 is formed. The trench 34b further comprises an opening 40b adjacent to the surface of the substrate 30 on which the mask 32 is formed.

[0044] The trench 34b further comprises sidewalls 38b between the base 36b and the opening 40b of the trench 34b. Preferably, the sidewalls 38b have a taper of between about 87 and about 90 to the plane perpendicular to the direction of anisotropic etching.

[0045] The duration of the plasma etch step depends on the thickness of the substrate and the desired dimensions of the trench 34b in a manner known in the art.

[0046] The resultant substrate 30b comprises a fully formed feature 34b which has an opening 40b and a substantially flat base 36b as shown in FIG. 1B. The sidewalls 38b can be formed to the desired taper angle.

[0047] The trench 34b can be subjected to a number of post-processing steps, such as mask removal, smoothing or polishing to provide the final feature.

Example 1

[0048] An exemplary set of process parameters for the plasma etch step of the method of the first embodiment is shown in Table 1. The exemplary process was performed in the Omega Synapse etch apparatus at a temperature of 20 C. with source and bias RF power supplies, when used, operating at 13.56 MHz.

TABLE-US-00001 TABLE 1 Process Parameter Pressure (mTorr) 12 Platen Back-Side Pressure of Helium (Torr) 10 ICP Source Power (Watts) 2200 Platen power (Watts) 1300 SF.sub.6 flow (sccm) 51 Cl.sub.2 flow (sccm) 38 SiF.sub.4 flow (sccm) 30 SiCl.sub.4 flow (sccm) 68 Ar flow (sccm) 380 O.sub.2 flow (sccm) 72

[0049] A trench etched by a plasma generated with the above parameters had a profile angle of 88.5. While keeping all other parameters used in the example process in table 1 constant, lowering the SiCl.sub.4 flow to 0 sccm and raising the SiF.sub.4 flow to 98 sccm (i.e. raising the F:Cl ratio) changed the profile angle from 88.5 to 88.9. Conversely, changing the flow (from that in table 1) to 90 sccm SiCl.sub.4 and 20 sccm SiF.sub.4 (i.e. lowering the F:Cl ratio), changed the profile angle from 88.5 to 87.6. Most other etch characteristics, including the etch rate and selectivity for example, are not significantly altered by these process adjustments.

[0050] Structures formed using the exemplary process parameters above had uniform and smooth base and sidewalls that were acceptable for use as trenches.

[0051] Flat-based trenches etched using two different chemistry regimes, fluorinated and combined fluorinated and chlorinated chemistry were investigated. The results are summarised in Table 2.

TABLE-US-00002 TABLE 2 Fluorinated Fluorinated and Characteristic Chemistry Chlorinated Chemistry Profile angle () 89.8 89.1 Etch rate (nm/min) 566 912 Uniformity (+/%) 2.3 1.5 Selectivity to SiO.sub.2 mask material 2.0:1 3.7:1

[0052] The fluorinated chemistry example shows a highly vertical profile angle with only moderate etch rate and has uniformity and selectivity towards the poor end of device manufacturer requirements. On the other hand, provided reasonable ratios of the gases are used, the combined fluorinated and chlorinated chemistry results in a desirable profile angle as standard and hence provides the opportunity to optimise other process characteristics. As shown in the table, combined fluorinated and chlorinated etch chemistry provides the highest etch rate and selectivity of the two chemistries, along with an excellent uniformity.

[0053] The method of the first embodiment of the present invention can provide smooth and uniform features formed in silicon carbide semiconductor in a flexible and simple process with finely tuned profile angles that does not sacrifice other etch characteristics such as selectivity and etch rate.

[0054] Although the present disclosure has been described with respect to one or more particular embodiments, it will be understood that other embodiments of the present disclosure may be made without departing from the scope of the present disclosure. Hence, the present disclosure is deemed limited only by the appended claims and the reasonable interpretation thereof.