Anti-reflective hardmask composition

Abstract

An anti-reflective hardmask composition contains: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solvent ##STR00001## in Chemical Formula 1, A.sub.1 and A.sub.2 are each independently a (C.sub.6-C.sub.40) aromatic aryl group and are the same as or different from each other, R is t-butyloxycarbonyl (t-BOC), ethoxyethyl, isopropyloxyethyl, or tetrahydropyranyl, X.sub.1 and X.sub.2 are each a polymerization linkage group derived from aldehyde or an aldehyde acetal monomer capable of being one-to-one polymerized with an arylcarbazole derivative and A.sub.2 in the presence of an acid catalyst, m/(m+n) is in a range of 0.05 to 0.8, and a weight average molecular weight (Mw) of an the polymer is in a range of 1,000 to 30,000.

Claims

1. An anti-reflective hardmask composition comprising: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solvent, ##STR00019## in Chemical Formula 1, A.sub.1 and A.sub.2 are each independently a (C.sub.6-C.sub.40) aromatic aryl group and are the same as or different from each other, R is t-butyloxycarbonyl (t-BOC), ethoxyethyl, isopropyloxyethyl, or tetrahydropyranyl, X.sub.1 and X.sub.2 are each a polymerization linkage group derived from aldehyde or an aldehyde acetal monomer capable of being one-to-one polymerized with an arylcarbazole derivative and A.sub.2 in the presence of an acid catalyst, m/(m+n) is in a range of 0.05 to 0.8, and a weight average molecular weight (Mw) of polymer is in a range of 1,000 to 30,000.

2. The anti-reflective hardmask composition of claim 1, wherein: A.sub.1 and A.sub.2 are each any one selected from the following sububstituents ##STR00020##

3. The anti-reflective hardmask composition of claim 2, wherein: A.sub.1 is a phenyl, biphenyl, naphthyl, anthracenyl, phenanthrenyl, or pyrenyl group, and A.sub.2 is a naphthyl, pyrenyl, diphenylfluorene, or dinaphthylfluorene group.

4. The anti-reflective hardmask composition of claim 2, wherein X.sub.1 or X.sub.2 is a benzaldehyde, naphthylaldehyde, or biphenylaldehyde group.

5. The anti-reflective hardmask composition of claim 2, further comprising a crosslinker component and an acid catalyst.

6. The anti-reflective hardmask composition of claim 5, it compries (a) 1 to 30 wt % of the arycarbazole derivative polymer or the polymer blend containing the same; (b) 0.1 to 5 wt % of the crosslinker component; (c) 0.001to 0.05 wt % of the acid catalyst; and (d) the balance being the organic solvent, based on 100 wt % of the hardmask composition.

7. The anti-reflective hardmask composition of claim 6, wherein: the crosslinker component is any one selected from the group consisting of a melamine resin, an amino resin, a glycoluril compound, and a bisepox compound.

8. The anti-reflective hardmask composition of claim 6, wherein: the acid catalyst is selected from the group consisting of p-toluenesulfonic acid monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadieneone, benzoin tosylate, 2-nitrobenzyl tosylate, and alkyl esters of organic sulfonic acid.

9. The anti-reflective hardmask composition of claim 1, wherein: A.sub.1 is a phenyl, biphenyl, naphthyl, anthracenyl, phenanthrenyl, or pyrenyl group, and A.sub.2 is a naphthyl, pyrenyl, diphenylfluorene, or dinaphthylfluorene group.

10. The anti-reflective hardmask composition of claim 1, wherein X.sub.1 or X.sub.2 is a benzaldehyde, naphthylaldehyde, or biphenylaldehyde group.

11. The anti-reflective hardmask composition of claim 1, further comprising a crosslinker component and an acid catalyst.

12. The anti-reflective hardmask composition of claim 11, it compries (a) 1 to 30 wt % of the arycarbazole derivative polymer or the polymer blend containing the same; (b) 0.1 to 5 wt % of the crosslinker component; (c) 0.001to 0.05 wt % of the acid catalyst; and (d) the balance being the organic solvent, based on 100 wt % of the hardmask composition.

13. The anti-reflective hardmask composition of claim 12, wherein: the crosslinker component is any one selected from the group consisting of a melamine resin, an amino resin, a glycoluril compound, and a bisepox compound.

14. The anti-reflective hardmask composition of claim 12, wherein: the acid catalyst is selected from the group consisting of p-toluenesulfonic acid monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadieneone, benzoin tosylate, 2-nitrobenzyl tosylate, and alkyl esters of organic sulfonic acid.

Description

DETAILED DESCRIPTION OF THE EMBODIMENTS

(1) According to the present invention, there is provided an anti-reflective hardmask composition containing: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solvent.

(2) ##STR00003##

(3) Here, in Chemical Formula 1, A.sub.1 and A.sub.2 may each be a (C.sub.6-C.sub.40) aromatic aryl group and be the same as or different from each other.

(4) Preferably, A.sub.1 and A.sub.2 may each be any one aromatic aryl group selected from the following substituents.

(5) ##STR00004##

(6) In addition, R may be a (C.sub.3-C.sub.20) alkyl group capable of being pyrolyzed at a temperature of 120 to 250 degrees. Preferably, R may be t-BOC, ethoxyethyl, isopropyloxyethyl, or tetrahydropyranyl.

(7) Meanwhile, X.sub.1 and X.sub.2 may be the same as or different from each other and be each a polymerization linkage group derived from aldehyde or an aldehyde acetal monomer capable of being one-to-one polymerized with an arylcarbazole monomer and A.sub.2 mainly in the presence of an acid catalyst. X.sub.1 and X.sub.2 each independently have the following structures. Mainly, X.sub.1 and X.sub.2 may be formed of aldehyde monomers such as paraformaldehyde, benzaldehyde, benzaldehyde dialkyl acetal, and the like, or monomers having a di-methoxy or di-ethoxy group, and may react with the carbazole derivative in the presence of the acid catalyst. Preferably, X.sub.1 and X.sub.2 may be any one of the following substituents.

(8) ##STR00005##

(9) Here, m/(m+n) may be in a range of 0.05 to 0.8, and a weight average molecular weight (Mw) of an entire copolymer may be in a range of 1,000 to 30,000, preferably, 2,000 to 5,000.

(10) Meanwhile, in order to prepare the hardmask composition, it is preferable to use a carbazole based aromatic ring-containing polymer (a) in an amount of 1 to 30 parts by weight based on 100 parts by weight of the organic solvent (b).

(11) In the case in which the amount of the carbazole based aromatic ring-containing polymer is less than 1 part by weight or more than 30 parts by weight, a coating thickness may become less than or more than a desired coating thickness, such that it is difficult to satisfy an accurate coating thickness.

(12) In addition, the organic solvent is not particularly limited as long as it has sufficient solubility for the aromatic ring-containing polymer. Examples thereof may include propylene glycol monomethyl ether acetate (PGMEA), cyclohexanone, ethyl lactate, and the like.

(13) Further, the anti-reflective hardmask composition according to the present invention may additionally contain (c) a cross-linker component; and (d) an acid catalyst.

(14) Preferably, the cross-linker component (c) used in the hardmask composition according to the present invention may cross-link a repeating unit of a polymer by heating in a reaction catalyzed by generated acid, and the acid catalyst (d) may be an acid catalyst activated by heat.

(15) The cross-linker component (c) used in the hardmask composition according to the present invention is not particular limited as long as it is a cross-linker capable of being reacted with a hydroxyl group of an aromatic ring containing polymer in a manner in which it is catalyzed by the generated acid. Specific examples thereof include an etherified amino resin, for example, a methylated or butylated melamine resin (specifically, a N-methoxymethyl-melamine resin or a N-butoxymethyl-melamine resin) and a methylated or butylated urea resin (specifically, Cymel U-65 Resin or UFR 80 Resin), a glycoluril compound (specifically, Powderlink 1174), or a bisepoxy compound (specifically, a 2,6-bis(hydroxymethyl)-p-cresol compound), and the like.

(16) As the acid catalyst (d) used in the hardmask composition according to the present invention, an organic acid such as p-toluene sulfonic acid monohydrate may be used, and a compound such as a thermal acid generator (TAG) for storage stability may also be used. The TAG is an acid generating compound generating acid at the time of heat treatment, and for example, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl esters of organic sulfonic acid, and the like, may be preferably used.

(17) In the case in which the cross-linker component (c) and the acid catalyst (d) are further contained in a final hardmask composition, the hardmask composition according to the present invention contains 1 to 30 wt %, more preferably, 3 to 15 wt % of a polymer prepared from an arylcarbazole derivative having a strong absorption property in a UV region or a polymer blend containing the same, 0.1 to 5 wt %, more preferably, 0.1 to 3 wt % of the cross-linker component (c), 0.001 to 0.05 wt %, more preferably 0.001 to 0.03 wt % of the acid catalyst (d), and the balance being the organic solvent, based on 100 wt % of the hardmask composition. Preferably, the organic solvent may be contained in an amount of 75 to 98 wt %.

(18) Here, in the case in which an amount of the aromatic ring-containing polymer is less than 1 wt % or more than 30 wt %, a coating thickness may become less than or more than a desired coating thickness, such that it is difficult to satisfy an accurate coating thickness.

(19) Further, in the case in which an amount of the cross-linker component is less than 0.1 wt %, cross-linking properties may not be exhibited, and in the case in which the amount of the cross-linker component is more than 5 wt %, optical properties of a coating film may be changed due to excessive addition.

(20) In addition, when an amount of the acid catalyst is less than 0.001 wt %, crosslinking properties may not be appropriately exhibited, and when the amount of the acid catalyst is more than 0.05 wt %, acidity may be increased due to excessive addition, which may affect storage stability.

(21) Hereinafter, the present invention will be described in more detail through the following Examples, but the following Examples are provided only in order to describe the present invention and are not used to limit the scope of the present invention.

Preparation Example 1

(22) ##STR00006##

(23) In a 250 mL round flask, 12 g (50 mmol) of 9-phenylcarbazole, 12.7 g (120 mmol) of benzaldehyde, and 11 g (50 mmol) of 1-pyrenol were completely dissolved in 85 g of propylene glycol monomethyl ether acetate (PGMEA) at a temperature of 60 degrees, and then 1 g of an undiluted sulfuric acid solution was added thereto.

(24) After a polymerization reaction was carried out for about 12 hours in a state in which a reaction temperature was maintained at about 120 C.,

(25) a precipitate formed after dropping a reactant in an excess methanol/water (8:2) co-solvent was dissolved in an appropriate amount of a PGMEA solvent, and then re-precipitated using an excess ethanol/water (8:2) co-solvent.

(26) A synthesized polymer was dissolved in an appropriate amount of tetrahydrofuran (THF) solvent, and an appropriate amount of triethylamine (TEA) was added thereto. Then, di-t-butyl dicarbonate was added thereto in a concentration of 20 to 100% of pyrenol (aromatic phenol) equivalent, and a reaction was carried out at a temperature of about 60 degrees for about 4 hours.

(27) After the reaction was terminated, a reactant was precipitated in an excessive amount of water and then neutralized using ammonium chloride salt. A produced precipitate was filtered and dried in a vacuum oven at 50 degrees for about 20 hours, thereby obtaining a polymer having a weight average molecular weight (Mw) of 2,600.

Preparation Example 2

(28) ##STR00007##

(29) A polymer was synthesized using 12 g (50 mmol) of 9-phenylcarbazole, 12.7 g (120 mmol) of benzaldehyde, and 11 g (50 mmol) of 1-pyrenol in the same manner as in Preparation Example 1.

(30) After the synthesized polymer was dissolved in an appropriate amount of tetrahydrofuran (THF) solvent, ethyl vinyl ether was added thereto in a concentration of 20 to 100% of pyrenol (aromatic phenol) equivalent. Then, a catalytic amount of p-toluene sulfonic acid was added thereto, and a reaction was carried out at room temperature for about 4 hours.

(31) After the reaction was terminated, a reactant was precipitated in an excessive amount of water and then neutralized using triethylamine (TEA). A produced precipitate was filtered and dried in a vacuum oven at 50 degrees for about 20 hours, thereby obtaining a polymer having a weight average molecular weight (Mw) of 2,400.

Preparation Example 3

(32) ##STR00008##

(33) A polymer was synthesized using 12 g (50 mmol) of 9-phenylcarbazole, 12.7 g (120 mmol) of benzaldehyde and 11 g (50 mmol) of 1-pyrenol in the same manner as in Preparation Example 1.

(34) After the synthesized polymer was dissolved in an appropriate amount of tetrahydrofuran (THF) solvent, isobutyl vinyl ether was added thereto in a concentration of 20 to 100% of pyrenol (aromatic phenol) equivalent, and then a polymer was synthesized in the same manner as in Preparation Example 2, thereby obtaining a polymer having a weight average molecular weight (Mw) of 2,500.

Preparation Example 4

(35) ##STR00009##

(36) A polymer was synthesized using 12 g (50 mmol) of 9-phenylcarbazole, 12.7 g (120 mmol) of benzaldehyde and 11 g (50 mmol) of 1-pyrenol in the same manner as in Preparation Example 1.

(37) After the synthesized polymer was reacted with 3,4-dihydro-2H-pyran in the same manner as in Preparation Example 2, a polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight (Mw) of 2,700.

Preparation Example 5

(38) ##STR00010##

(39) After 15 g (50 mmol) of 9-naphthylcarbazole, 12.7 g (120 mmol) of benzaldehyde, and 11 g (50 mmol) of 1-pyrenol were dissolved in 116 g of propylene glycol monomethyl ether acetate, 1 g of an undiluted sulfuric acid solution was added thereto.

(40) After a polymerization was carried out in the same manner as in Preparation Example 1, and a polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,800.

Preparation Example 6

(41) ##STR00011##

(42) After 17.2 g (50 mmol) of 9-(9-phenanthryl)carbazole, 12.7 g (120 mmol) of benzaldehyde, and 11 g (50 mmol) of 1-pyrenol were dissolved in 122 g of propylene glycol monomethyl ether acetate, 1 g of an undiluted sulfuric acid solution was added thereto.

(43) After a polymerization was carried out in the same manner as in Preparation Example 1, and a polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,700.

Preparation Example 7

(44) ##STR00012##

(45) After a polymer was synthesized using 12 g (50 mmol) of 9-phenylcarbazole, 18.7 g (120 mmol) of 1-naphthaldehyde, and 11 g (50 mmol) of 1-pyrenol in the same manner as in Preparation Example 1, the polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,300.

Preparation Example 8

(46) ##STR00013##

(47) After a polymer was synthesized using 15 g (50 mmol) of 9-naphthylcarbazole, 18.7 g (120 mmol) of 2-naphthaldehyde, and 11 g (50 mmol) of 1-pyrenol in the same manner as in Preparation Example 1, the polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,400.

Preparation Example 9

(48) ##STR00014##

(49) After a polymer was synthesized using 15 g (50 mmol) of 9-naphthylcarbazole, 21.8 g (120 mmol) of biphenylaldehyde, and 11 g (50 mmol) of 1-pyrenol in the same manner as in Preparation Example 1, the polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,500.

Preparation Example 10

(50) ##STR00015##

(51) After a polymer was synthesized using 20.5 g (70 mmol) of 9-naphthylcarbazole, 12.7 g (120 mmol) benzaldehyde, and 10.5 g (30 mmol) of 9,9-bis(4-hydroxyphenyl)fluorene in the same manner as in Preparation Example 1, the polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,500.

Preparation Example 11

(52) ##STR00016##

(53) After a polymer was synthesized using 20.5 g (70 mmol) of 9-naphthylcarbazole, 18.7 g (120 mmol) of 2-naphthaldehyde, and 10.5 g (30 mmol) of 9,9-bis(4-hydroxyphenyl)fluorene in the same manner as in Preparation Example 1, the polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,600.

Preparation Example 12) Synthesis of Arylcarbazole Based Cyclic Polymer

(54) ##STR00017##

(55) After a polymer was synthesized using 20.5 g (70 mmol) of 9-naphthylcarbazole, 12.7 g (120 mmol) benzaldehyde, and 13.5 g (30 mmol) of 9,9-bis(4-hydroxynaphthyl)fluorene in the same manner as in Preparation Example 1, the polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 2,900.

Comparative Preparation Example) Synthesis of Hydroxynaphthalene Polymer

(56) ##STR00018##

(57) After 35 g (100 mmol) of 9,9-bis(4-hydroxyphenyl)fluorene and 12.7 g (120 mmol) of benzaldehyde were dissolved in 115 g of PGMEA, 1 g of concentrated sulfuric acid was added thereto.

(58) After a polymerization was carried out in the same manner as in Preparation Example 1, and a polymer was purified and dried in a vacuum oven, thereby obtaining a polymer having a weight average molecular weight of 3,100. [Preparation Examples 1-12 and Comparative Preparation Example]

(59) Preparation of Hardmask Composition

(60) After 0.9 g of each of the polymers prepared in Preparation Examples 1 to 12 and Comparative Preparation Example was weighed and dissolved together with 0.1 g of glycoluril compound crosslinker (Powderlink 1174) and 1 mg of pyridinium p-toluene sulfonate in 9 g of propylene glycol monomethyl ether acetate (PGMEA), followed by filtration, thereby preparing sample solutions of Preparation Examples 1 to 12 and Comparative Preparation Example.

(61) Each of the sample solutions prepared in Preparation Examples 1 to 12 and Comparative Preparation Example was spin-coated on a silicon wafer and baked at 240 C. for 60 seconds, thereby forming a film having a thickness of 3,000 .

(62) A refractive index n and an extinction coefficient k of each of the formed films were obtained, respectively. A used device was Ellipsometer (manufactured by J. A. Woollam) and measurement results were shown in Table 1.

(63) As an evaluation result, it was confirmed that the films have refractive indices and absorbance enough to be used as an anti-reflective film at wavelengths of ArF (193 nm) and KrF (248 nm). Generally, a refractive index of a material used as a semiconductor anti-reflective film is in a range of about 1.4 to 1.8, and an extinction coefficient is important. The higher the extinction coefficient is, the better, and generally, when a k value is 0.3 or more, there is no problem in use a film as an anti-reflective film. Therefore, it may be appreciated that the hardmask compositions according to the embodiments of the present invention may be used as anti-reflective films.

(64) TABLE-US-00001 TABLE 1 Optical Properties (193 nm) Optical Properties (248 nm) Refractive Extinction Refractive Extinction Sample Index (n) Coefficient (k) Index (n) Coefficient (k) Preparation 1.50 0.69 1.71 0.52 Example 1 Preparation 1.50 0.71 1.70 0.53 Example 2 Preparation 1.49 0.70 1.71 0.54 Example 3 Preparation 1.52 0.69 1.73 0.53 Example 4 Preparation 1.53 0.72 1.72 0.54 Example 5 Preparation 1.52 0.71 1.71 0.55 Example 6 Preparation 1.54 0.69 1.73 0.55 Example 7 Preparation 1.51 0.70 1.73 0.53 Example 8 Preparation 1.52 0.68 1.71 0.53 Example 9 Preparation 1.53 0.69 1.72 0.54 Example 10 Preparation 1.54 0.70 1.73 0.55 Example 11 Preparation 1.55 0.71 1.74 0.52 Example 12 Comparative 1.48 0.68 1.95 0.35 Preparation Example

(65) Lithographic Evaluation of Anti-Reflective Hardmask Composition

(66) Each of the sample solutions prepared in Preparation Examples 1, 6, 8, and 10 and Comparative Preparation Example was spin-coated on a silicon wafer coated with aluminum and baked at 240 C. for 60 seconds, thereby forming a coating film having a thickness of 3000 .

(67) A photoresist for KrF was coated on each of the formed coating films and baked at 110 C. for 60 seconds and exposed to light using exposure equipment (XT: 1400, NA 0.93, manufactured by ASML), followed by development using a tetramethyl ammonium hydroxide aqueous solution (2.38 wt %) for 60 seconds. Next, as a result of observing a 90 nm line and space pattern thereof using V-SEM, the result shown in the following Table 2 was obtained. A exposure latitude (EL) margin depending on changes in exposure energy and a depth of focus (DoF) margin depending on changes in distance from a light source were measured and the measurement results are recorded in Table 2. As a pattern evaluation result, it may be appreciated that the patterns showed good results in terms of profiles and margins, and satisfied an EL margin and a DoF margin required in litho pattern evaluation.

(68) TABLE-US-00002 TABLE 2 Pattern Properties EL Margin DoF Margin Sample (mJ/energy mJ) (m) Pattern Shape Preparation 0.4 0.4 cubic Example 1 Preparation 0.3 0.3 cubic Example 6 Preparation 0.4 0.3 cubic Example 8 Preparation 0.4 0.4 cubic Example 10 Preparation 0.2 0.2 undercut Example

(69) Evaluation of Etching Properties of Anti-reflective Hardmask Composition

(70) Bottom SiON anti-reflective coating (BARC) films of specimens each patterned in Preparation Examples 1, 6, and 8 and Comparative Preparation Example were dry-etched by CHF.sub.3/CF.sub.4 mixed gas using PR as a mask, and subsequently, the respective hardmasks were dry-etched by O.sub.2/N.sub.2 mixed gas using the bottom SiON anti-reflective coating (BARC) film as a mask. Thereafter, a silicon nitride (SiN) film was dry-etched by ChF.sub.3/CF.sub.3 mixed gas using the hardmask as a mask, and the remaining hardmask and organic material were subjected to O.sub.2 ashing and wet stripping processes.

(71) Immediately after hardmask etching and silicon nitride etching, a cross section of each of the specimens was observed using V-SEM, and the results are shown in Table 3. As a result of etching, in each case, pattern shapes after hardmask etching and silicon nitride etching were good without a bowing phenomenon, such that it was confirmed that resistance against an etching process was sufficient, and an etching process of the silicon nitride film was satisfactorily performed.

(72) TABLE-US-00003 TABLE 3 Pattern Shape (After Pattern Shape (After SiN Sample Hardmask Etching) Etching) Preparation Example 1 Vertical Shape Vertical Preparation Example 6 Vertical Shape Vertical Shape Preparation Example 8 Vertical Shape Vertical Shape Comparative Slightly Bowing Shape Slightly Bowing Shape Preparation Example

(73) While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.