MULTIJUNCTION SOLAR CELL HAVING A FUSED SILICA COVER GLASS

Abstract

A solar cell includes a portion of a Germanium layer having a first side and a second side. The second side has properties consistent with a grinding and etching operation to thin a Germanium wafer to form the Germanium layer. Edges of the portion of the Germanium layer may have properties consistent with dicing using a diamond-coated saw. The portion of the Germanium layer may have a thickness of less than 150 micrometers. Compound semiconductor materials and circuitry are coupled to the first side of the portion of the Germanium layer to define a multijunction solar cell. A fused silica cover glass is coupled to the multijunction solar cell via a silicone-based adhesive.

Claims

1. A method of fabricating a solar cell, the method comprising: depositing materials to form a multijunction solar cell on a first side of a Germanium wafer to produce an in-process wafer having a Germanium layer; performing grinding and etching operations on a second side of the Germanium layer to reduce surface roughness of the Germanium layer, the second side of the Germanium layer opposite the first side of the Germanium wafer; dicing the in-process wafer to generate a Germanium-backed multijunction solar cell; coupling a fused silica cover glass to the Germanium-backed multijunction solar cell using an adhesive; and curing the adhesive and to adhere the fused silica cover glass to the Germanium-backed multijunction solar cell.

2. The method of claim 1, wherein the grinding operation reduces a thickness of the Germanium layer to a thickness greater than 150 micrometers.

3. The method of claim 1, wherein the grinding operation reduces a thickness of the Germanium layer to a thickness greater than 200 micrometers.

4. The method of claim 1, wherein the dicing includes cutting the Germanium layer using a diamond-coated saw.

5. The method of claim 1, wherein the adhesive includes a silicone-based adhesive.

6. The method of claim 1, wherein the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

7. The method of claim 1, wherein the grinding operation reduces a thickness of the Germanium layer to a thickness greater than 150 micrometers and the dicing includes cutting the Germanium layer using a diamond-coated saw.

8. The method of claim 1, wherein the grinding operation reduces a thickness of the Germanium layer to a thickness greater than 150 micrometers, the adhesive includes a silicone-based adhesive, and the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

9. The method of claim 1, wherein the dicing includes cutting the Germanium layer using a diamond-coated saw, the adhesive includes a silicone-based adhesive, and the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

10. The method of claim 1, wherein the grinding operation reduces a thickness of the Germanium layer to a thickness greater than 150 micrometers, the dicing includes cutting the Germanium layer using a diamond-coated saw, the adhesive includes a silicone-based adhesive, and the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

11. A method of fabricating a solar cell, the method comprising: depositing materials to form a multijunction solar cell on a first side of a Germanium wafer to produce an in-process wafer having a Germanium layer; performing a grinding operation on a second side of the Germanium layer to reduce a thickness of the Germanium layer to a thickness greater than 150 micrometers, the second side of the Germanium layer opposite the first side of the Germanium wafer; dicing the in-process wafer to generate a Germanium-backed multijunction solar cell; coupling a fused silica cover glass to the Germanium-backed multijunction solar cell using an adhesive; and curing the adhesive and to adhere the fused silica cover glass to the Germanium-backed multijunction solar cell.

12. The method of claim 11, wherein the grinding operation reduces the thickness of the Germanium layer to a thickness greater than 200 micrometers.

13. The method of claim 11, wherein the dicing includes cutting the Germanium layer using a diamond-coated saw.

14. The method of claim 11, wherein the adhesive includes a silicone-based adhesive.

15. The method of claim 11, wherein the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

16. The method of claim 11, wherein the dicing includes cutting the Germanium layer using a diamond-coated saw, the adhesive includes a silicone-based adhesive, and the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

17. A method of fabricating a solar cell, the method comprising: depositing materials to form a multijunction solar cell on a first side of a Germanium wafer to produce an in-process wafer having a Germanium layer; dicing the in-process wafer using a diamond-coated saw to generate a Germanium-backed multijunction solar cell; coupling a fused silica cover glass to the Germanium-backed multijunction solar cell using an adhesive; and curing the adhesive and to adhere the fused silica cover glass to the Germanium-backed multijunction solar cell.

18. The method of claim 17, wherein the adhesive includes a silicone-based adhesive and the curing is a low-temperature adhesive curing process performed at less than 100 degrees Celsius.

19. A method of fabricating a solar cell, the method comprising: depositing materials to form a multijunction solar cell on a first side of a Germanium wafer to produce an in-process wafer having a Germanium layer; dicing the in-process wafer to generate a Germanium-backed multijunction solar cell; coupling a fused silica cover glass to the Germanium-backed multijunction solar cell using a silicone-based adhesive; and performing a low-temperature adhesive curing process to cure the silicone-based adhesive and to adhere the fused silica cover glass to the Germanium-backed multijunction solar cell.

20. The method of claim 19, wherein depositing the materials to form the multijunction solar cell comprises depositing a compound semiconductor on the first side of the Germanium wafer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0006] FIG. 1A illustrates an example of a Germanium wafer used to fabricate a Germanium-backed multijunction solar cell having a fused silica cover glass.

[0007] FIG. 1B illustrates an example of performing a deposition operation on the Germanium wafer of FIG. 1A to deposit a compound semiconductor material and related circuitry.

[0008] FIG. 1C illustrates an example of performing a grinding operation on the Germanium wafer of FIG. 1B.

[0009] FIG. 1D illustrates an example of performing an etching operation on the Germanium wafer of FIG. 1C.

[0010] FIG. 1E illustrates an example of performing a dicing operation to cut the Germanium wafer of FIG. 1D into one or more Germanium-backed multijunction solar cells.

[0011] FIG. 1F illustrates an example of a packaging operation including coupling a fused silica cover glass to the multijunction solar cell.

[0012] FIG. 2 is a flowchart of a first example of a method of fabricating a Germanium-backed multijunction solar cell having a fused silica cover glass.

[0013] FIG. 3 is a flowchart of a second example of a method of fabricating a Germanium-backed multijunction solar cell having a fused silica cover glass.

[0014] FIG. 4 is a flowchart of a third example of a method of fabricating a Germanium-backed multijunction solar cell having a fused silica cover glass.

[0015] FIG. 5 is a flowchart of a fourth example of a method of fabricating a Germanium-backed multijunction solar cell having a fused silica cover glass.

DETAILED DESCRIPTION

[0016] Particular embodiments of the present disclosure are described below with reference to the drawings. In the description, common features are designated by common reference numbers throughout the drawings.

[0017] The figures and the following description illustrate specific exemplary embodiments. It will be appreciated that those skilled in the art will be able to devise various arrangements that, although not explicitly described or shown herein, embody the principles described herein and are included within the scope of the claims that follow this description. Furthermore, any examples described herein are intended to aid in understanding the principles of the disclosure and are to be construed as being without limitation. As a result, this disclosure is not limited to the specific embodiments or examples described below, but by the claims and their equivalents.

[0018] As used herein, various terminology is used for the purpose of describing particular implementations only and is not intended to be limiting. For example, the singular forms a, an, and the are intended to include the plural forms as well, unless the context clearly indicates otherwise. Further, the terms comprise, comprises, and comprising are used interchangeably with include, includes, or including. Additionally, the term wherein is used interchangeably with the term where. As used herein, exemplary indicates an example, an implementation, and/or an aspect, and should not be construed as limiting or as indicating a preference or a preferred implementation. As used herein, an ordinal term (e.g., first, second, third, etc.) used to modify an element, such as a structure, a component, an operation, etc., does not by itself indicate any priority or order of the element with respect to another element, but rather merely distinguishes the element from another element having a same name (but for use of the ordinal term). As used herein, the term set refers to a grouping of one or more elements, and the term plurality refers to multiple elements.

[0019] As used herein, generating, calculating, using, selecting, accessing, and determining are interchangeable unless context indicates otherwise. For example, generating, calculating, or determining a parameter (or a signal) can refer to actively generating, calculating, or determining the parameter (or the signal) or can refer to using, selecting, or accessing the parameter (or signal) that is already generated, such as by another component or device. As used herein, coupled can include communicatively coupled, electrically coupled, or physically coupled, and can also (or alternatively) include any combinations thereof. Two devices (or components) can be coupled (e.g., communicatively coupled, electrically coupled, or physically coupled) directly or indirectly via one or more other devices, components, wires, buses, networks (e.g., a wired network, a wireless network, or a combination thereof), etc. Two devices (or components) that are electrically coupled can be included in the same device or in different devices and can be connected via electronics, one or more connectors, or inductive coupling, as illustrative, non-limiting examples. In some implementations, two devices (or components) that are communicatively coupled, such as in electrical communication, can send and receive electrical signals (digital signals or analog signals) directly or indirectly, such as via one or more wires, buses, networks, etc. As used herein, directly coupled is used to describe two devices that are coupled (e.g., communicatively coupled, electrically coupled, or physically coupled) without intervening components.

[0020] The disclosed solar cell is designed and manufactured to provide improved power output especially in high radiation environments that would degrade borosilicate glass. For example, the disclosed solar cell uses a fused silica cover glass which is less subject to radiation darkening than borosilicate cover glass enabling greater light transmission to the solar cell which results in improved power output when used in the space environment. In addition, the solar cell is manufactured using one or more of a combination of manufacturing operations specifically designed to reduce the critical stress for crack propagation that is driven by the differences in the coefficient of thermal expansion of the fused silica cover glass and coefficients of thermal expansion of the Germanium substrate and of compound semiconductor materials of the solar cell. As non-limiting examples, the manufacturing operations used include one or more of: backside grinding and etching to reduce crack initiation sites on a backside of the Germanium substrate; backside grinding the Germanium substrate to a thickness greater than 150 m (e.g., 200 m or more); dicing using a diamond-coated saw to reduce crack initiation sites on edges of the Germanium substrate; or using relatively low temperatures to cure a silicone adhesive used to couple the fused silica cover glass to the solar cell. Individually, each of these manufacturing operations reduce the likelihood of having a crystalline defect that grows into a crack due to the differences in thermal expansion or improves tolerance to differential thermal expansion. Further, two or more of these manufacturing operations can be used in combination to achieve even greater improvements.

[0021] FIGS. 1A through 1F illustrate examples of various manufacturing process stages during fabrication of one or more Germanium-backed multijunction solar cell. In the following description, the manufacturing process stages of FIGS. 1A-1F are generally described as occurring sequentially; however, in other implementations, a Germanium-backed multijunction solar cell is manufactured using fewer operations, more operations, or different operations than described with reference to FIGS. 1A-1F.

[0022] FIG. 1A illustrates an example of a Germanium wafer 102 used to fabricate a Germanium-backed multijunction solar cell having a fused silica cover glass. In some implementations, the Germanium wafer 102 is purchased from a wafer supplier. In such implementations, the wafer supplier generally cuts (also referred to as wafer sawing) the Germanium wafer 102 from a large crystal of Germanium. The wafer supplier also prepares the Germanium wafer 102 for use in a semiconductor manufacturing process, which can include, for example, cleaning, planarizing, polishing, and indexing the Germanium wafer 102. The Germanium wafer 102 may undergo one or more additional preparatory operations after it is received from the wafer supplier, such as one or more cleaning or marking operations. In FIG. 1A, a first side 104 and a second side 106 of the Germanium wafer 102 are identified as references for subsequent manufacturing operations.

[0023] FIG. 1B illustrates an example of performing a deposition operation on the Germanium wafer 102 of FIG. 1A. In the example shown, the deposition operation deposits compound semiconductor materials 108 and related circuitry 110 on the first side 104 of the Germanium wafer 102, such that the Germanium wafer 102 corresponds to, includes, or is included within a Germanium layer 103 of an in-process wafer 105 after the deposition operation. The compound semiconductor materials 108 include two or more elements selected from Groups 13 through 15 of the periodic table (based on current International Union of Pure and Applied Chemistry (IUPAC) periodic table labeling conventions) and may also include other elements as dopants. The circuitry 110 includes device structures formed of the compound semiconductor materials 108 (e.g., transistors or diodes) and conductive traces between and among such device structures. In particular implementations, the circuitry 110 includes a metal, such as Aluminum, Copper, Silver, Gold, or combinations thereof.

[0024] In various implementations, the compound semiconductor materials 108 are deposited using metal organic vapor phase epitaxy (MOVPE), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), evaporation, sputtering, molecular-beam epitaxy (MBE), or combinations thereof (e.g., ALD followed by CVD, etc.). Additionally, the deposition operation of FIG. 1B can include various patterning and cleaning operations to assist with depositing the compound semiconductor materials 108 in targeted locations. Further, additional materials can be deposited on the Germanium layer 103 or the compound semiconductor materials 108 during this manufacturing stage. To illustrate, oxide layers, nitride layers, or other barrier layers can be deposited or formed during this manufacturing stage.

[0025] The circuitry 110 is deposited using one or more of the deposition processes listed above, or using an electrochemical deposition process, such as plating. The deposition of the circuitry 110 can also include various patterning and cleaning operations to assist with depositing conductive materials in targeted locations.

[0026] FIG. 1C illustrates an example of performing a grinding operation (also referred to as a backside grinding operation) on the Germanium layer 103. In the example illustrated in FIG. 1C, a wafer grinder 114 performs the grinding operation on the second side 106 of the Germanium layer 103 to reduce a thickness 112 of the Germanium layer 103. The wafer grinder 114 uses physical abrasion to remove a portion of the Germanium layer 103. In some implementations, the grinding operation is performed in a single grind process. In other implementations, the grinding operation is performed in multiple stages, such as one or more coarse grinding operations followed by one or more fine grinding operations. The grinding operation reduces the thickness 112 of the Germanium layer 103 to a target thickness. In particular examples, the target thickness is greater than 150 m, or even greater than 200 m. To illustrate, in some implementation, the target thickness is approximately 205 m. Leaving the Germanium layer 103 with a relatively large thickness 112 (e.g., greater than 150 m) increases the strength of each solar cell formed from the Germanium layer 103 as compared to solar cells formed using thinner Germanium layers (e.g., solar cells formed on layers with thicknesses of about 140 m or less.

[0027] Additionally, the grinding operation ends with a fine grind that smoothes the second side 106 of the Germanium layer 103 to remove stress concentrators (e.g., cracks and scratches). In particular implementations, the Germanium layer 103 is subjected to an etching operation after the grinding operations, as illustrated in FIG. 1D. In the etching operation, the in-process wafer 105 is inserted into etch equipment 116, which exposes at least the second side 106 of the in-process wafer 105 to an etchant 118. In the particular example illustrated in FIG. 1D, the etching operations is a wet etch, which means the etch equipment 116 includes a liquid bath of the etchant 118 in which the in-process wafer 105 is wholly or partly submerged. Other implementations use a dry etch, such as a reactive ion etch. The etching operations further reduces the stress on the second side 106 by removing crystal defects induced in the crystal structure of the Germanium layer 103 by the grinding operation.

[0028] FIG. 1E illustrates an example of performing a dicing operation to cut the in-process wafer 105 (including the Germanium layer 103 of FIG. 1B) into one or more Germanium-backed multijunction solar cells. The dicing operation of FIG. 1E uses a diamond-coated saw 120 to cut the Germanium layer 103.

[0029] The diamond-coated saw 120 uses a very fine coating of diamond to abrade the in-process wafer 105, including the Germanium layer 103. Thus, in addition to cutting the Germanium layer 103 into various Germanium-backed multijunction solar cells, the diamond-coated saw 120 leaves a smoother edge to the Germanium-backed multijunction solar cell than a scribe and break based process. This smoother edge results in fewer stress concentrators and a higher fracture strength of each Germanium-backed multijunction solar cell.

[0030] FIG. 1F illustrates an example of a packaging operation including coupling a fused silica cover glass 126 to a multijunction solar cell 130 to form a Germanium-backed multijunction solar cell with a fused silica cover glass 132. The multijunction solar cell 130 corresponds to or includes a die cut from the in-process wafer 105 during the dicing operation of FIG. 1E. In some implementations, the multijunction solar cell 130 also includes back electrode 128 connected to the circuitry 110 by one or more connections (not shown). In such implementations, the back electrode 128 is formed using a deposition operation (e.g., evaporation), which can be performed on the in-process wafer 105 before performing the dicing operation or performed on individual die cut from the in-process wafer 105 after the dicing operation.

[0031] In the packaging operation illustrated in FIG. 1F, an adhesive 124 is applied to the first surface of the multijunction solar cell 130, where the first surface (corresponding to an upper surface in the orientation illustrated in FIG. 1F) of the multijunction solar cell 130. In an alternative implementation, the adhesive 124 is applied to a surface of the fused silica cover glass 126. In a particular implementation, the adhesive 124 is a silicone-based adhesive such as DOW CORNING 93-500 Space-Grade Encapsulant. After application of the adhesive 124, the fused silica cover glass 126 and the multijunction solar cell 130 are pressed together, and the adhesive 124 is cured. In some implementations, before curing, the adhesive 124 is a transparent, colorless, low viscosity fluid, and after curing, the adhesive 124 is a flexible solid that transmits light.

[0032] In a particular implementation, a low-temperature curing operation is used to cure the adhesive 124. For example, the adhesive 124 is cured at a temperature of less than 100 deg. C. Curing the adhesive 124 at a lower temperature (e.g., <100 deg. C.) is generally slower than curing the adhesive 124 at a higher temperature (e.g., >100 deg. C.); however, it is believed that lower-temperature cured adhesive 124 reduces stress in the assembly.

[0033] As explained above, the operations illustrated in FIGS. 1A-1F are not intended to be comprehensive. For example, in some implementations, one or more protective layers (e.g., oxide layers or polymer layers) may be applied to overlie one or more surfaces of the Germanium layer 103, the compound semiconductor materials 108, the circuitry 110, or a combination thereof, before the grinding and etching operations are performed. In such implementations, the protective layer(s) can be removed before performing the packaging operations. As another example, in some implementations, the packaging operations further includes partially encapsulating the multijunction solar cell 130, such as applying a protective coating on edges of the multijunction solar cell 130.

[0034] Additionally, the order of the steps illustrated in FIGS. 1A-1F is different in some implementations. For example, in some implementations, a wafer level attach operation can be performed to couple a fused silica wafer to the in-process wafer 105. In this example, the dicing operation is performed to cut both the Germanium layer 103 and the attached fused silica wafer to form the multijunction solar cell with fused silica cover glass 132.

[0035] Further, one or more operations illustrated in FIGS. 1A-1F are omitted in some implementations. To illustrate, in some implementations, after the etching operation, a scribe and break operation is used to separate the in-process wafer 105 into discrete die. In some such implementations, the discrete die so formed are used in the packaging operation of FIG. 1F without further processing. In other such implementations, the discrete die formed by the scribe and break operation are edge polished or otherwise processed to smooth the edges of the dies before the packaging operation is performed.

[0036] Additionally, in some implementations, one or more of the operations illustrated in FIGS. 1A-1F are performed in a different matter than describe above. To illustrate, in some implementations, the grinding operation is performed to a target thickness of less than 150 m. In such implementations, the operations described with references to FIGS. 1B, 1D, 1E, and 1F are unchanged.

[0037] FIG. 2 is a flowchart of a first example of a method 200 of fabricating a multijunction solar cell 130 having a fused silica cover glass 126. The method 200 can be performed using the techniques described with respect to FIGS. 1A-1F.

[0038] The method 200 includes depositing compound semiconductor materials 108 and circuitry 110 on a first side of a Germanium wafer 102 to produce (e.g. to form) an in-process wafer 105 having a Germanium layer 103, at 202. For example, depositing the compound semiconductor materials 108 and circuitry 110 can be performed as described with reference to FIG. 1B.

[0039] The method 200 also includes performing grinding and etching operations on a second side 106 of a Germanium layer 103 to reduce surface roughness of the Germanium layer 103, at 204. In this context, the second side 106 of the Germanium layer 103 is opposite the first side 104 of the Germanium wafer 102. In some implementations, the grinding operation thins the Germanium layer 103 to a thickness greater than 150 m or even greater than 200 m, such as approximately 205 m. For example, the grinding operation can be performed as described with reference to FIG. 1C. Reducing the surface roughness reduces the number and size stress concentrators on the second side 106 of the Germanium layer 103 by relieving crystal defects induced in the crystal structure of the Germanium layer 103 by the grinding operation.

[0040] The method 200 further includes dicing the in-process wafer 105 (including the Germanium layer 103) to generate a Germanium-backed multijunction solar cell 130, at 206. For example, the dicing operation can be performed as described with reference to FIG. 1E. In such implementations, the diamond-coated saw 120 cuts a narrow, smooth channel through the Germanium layer 103. As a result, relatively few, small defective regions are formed along cut edges of the Germanium layer 103 as compared to the number and size of defect regions formed using a scribe and break operation. In other implementations, another dicing operation can be used, such as a scribe and break operation or a cutting operation that does not use a diamond-coated saw 120.

[0041] The method 200 also includes coupling a fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130 using an adhesive, at 208. In some implementations, the adhesive is a silicone-based adhesive 124. The method 200 also includes curing the adhesive to adhere the fused silica cover to the Germanium-backed multijunction solar cell, at 210. For example, curing the adhesive can include performing a low-temperature adhesive curing process to cure the silicone-based adhesive 124 and adhere the fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130. For example, the coupling and curing operation can be performed as part of the packaging operation described with reference to FIG. 1F. Performing the low-temperature adhesive curing process, as opposed to a high temperature adhesive curing process, reduces stresses in communicated between the Germanium-backed multijunction solar cell 130 and the fused silica cover glass 126 due to differences in thermal expansion. In other implementations, a high temperature curing operation can be used to cure the silicone-based adhesive 124 or a different type of adhesive can be used.

[0042] FIG. 3 is a flowchart of a second example of a method 300 of fabricating a multijunction solar cell 130 having a fused silica cover glass 126. The method 300 can be performed using the techniques described with respect to FIGS. 1A-1D and 1F.

[0043] The method 300 includes depositing compound semiconductor materials 108 and circuitry 110 on a first side 104 of a Germanium wafer 102 to produce (e.g. to form) an in-process wafer 105 having a Germanium layer 103, at 302. For example, depositing the compound semiconductor materials 108 and circuitry 110 can be performed as described with reference to FIG. 1B.

[0044] The method 300 also includes performing a grinding operation on a second side 106 of the Germanium layer 103 to reduce a thickness of the Germanium layer 103, at 304. In this context, the second side 106 of the Germanium layer 103 is opposite the first side 104 of the Germanium wafer 102. The grinding operation thins the Germanium layer 103 to a target thickness greater than 150 m or even greater than 200 m, such as approximately 205 m. For example, the grinding operation can be performed as described with reference to FIG. 1C. Leaving the Germanium layer 103 with thickness greater than 150 m increases the strength of each solar cell formed from the Germanium layer 103 as compared to solar cells formed using thinner Germanium layers (e.g., solar cells formed on substrates with thicknesses of about 140 m or less).

[0045] The method 300 further includes dicing the in-process wafer 105 (including the Germanium layer 103) to generate (e.g., to produce or form) a Germanium-backed multijunction solar cell 130, at 306. For example, a scribe and break operation can be used to dice the in-process wafer 105. In some implementations, one or more edges of a die formed by dicing the in-process wafer 105 can be smoothed using a polishing or grinding operation.

[0046] The method 300 also includes coupling a fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130 using an adhesive, at 308. The method 300 also includes curing the adhesive to adhere the fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130, at 310.

[0047] FIG. 4 is a flowchart of a third example of a method 400 of fabricating a multijunction solar cell 130 having a fused silica cover glass 126. The method 400 can be performed using the techniques described with respect to FIGS. 1A-1E.

[0048] The method 400 includes depositing compound semiconductor materials 108 and circuitry 110 on a first side 104 of a Germanium wafer 102 to produce (e.g. to form) an in-process wafer 105 having a Germanium layer 103, at 402. For example, depositing the compound semiconductor materials 108 and circuitry 110 can be performed as described with reference to FIG. 1B.

[0049] The method 400 further includes dicing the in-process wafer 105 (including the Germanium layer 103) to generate (e.g. to form or produce) a Germanium-backed multijunction solar cell 130, at 404. For example, the dicing can include a scribe and break operation or a cutting operation can be performed as described with reference to FIG. 1E.

[0050] The method 400 also includes coupling a fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130 using an adhesive, at 406 and curing the adhesive to adhere the fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130, at 408. For example, the curing operation can be performed at a relatively high temperature, such as greater than 100 deg. C., or at a relatively low temperature, such as less than 100 deg. C.

[0051] FIG. 5 is a flowchart of a fourth example of a method 500 of fabricating a multijunction solar cell 130 having a fused silica cover glass 126. The method 500 can be performed using the techniques described with respect to FIGS. 1A, 1B, 1E and 1F.

[0052] The method 500 includes depositing compound semiconductor materials 108 and circuitry 110 on a first side 104 of a Germanium wafer 102 to produce (e.g. to form) an in-process wafer 105 having a Germanium layer 103, at 502. For example, depositing the compound semiconductor materials 108 and circuitry 110 can be performed as described with reference to FIG. 1B.

[0053] The method 500 further includes dicing the in-process wafer 105 (including the Germanium layer 103) to generate a Germanium-backed multijunction solar cell 130, at 504. For example, the dicing can include a scribe and break operation or a cutting operation can be performed as described with reference to FIG. 1E.

[0054] The method 500 also includes coupling a fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130 using a silicone-based adhesive 124, at 506. The method 500 also includes performing a low-temperature adhesive curing process to cure the silicone-based adhesive 124 and adhere the fused silica cover glass 126 to the Germanium-backed multijunction solar cell 130, at 508. For example, the coupling and curing operation can be performed as part of the packaging operation described with reference to FIG. 1F. Performing the low-temperature adhesive curing process, as opposed to a high temperature adhesive curing process, reduces stresses communicated between the Germanium-backed multijunction solar cell 130 and the fused silica cover glass 126 due to differences in thermal expansion.

[0055] The illustrations of the examples described herein are intended to provide a general understanding of the structure of the various implementations. The illustrations are not intended to serve as a complete description of all of the elements and features of apparatus and systems that utilize the structures or methods described herein. Many other implementations may be apparent to those of skill in the art upon reviewing the disclosure. Other implementations may be utilized and derived from the disclosure, such that structural and logical substitutions and changes may be made without departing from the scope of the disclosure. For example, method operations may be performed in a different order than shown in the figures or one or more method operations may be omitted. Accordingly, the disclosure and the figures are to be regarded as illustrative rather than restrictive.

[0056] Moreover, although specific examples have been illustrated and described herein, it should be appreciated that any subsequent arrangement designed to achieve the same or similar results may be substituted for the specific implementations shown. This disclosure is intended to cover any and all subsequent adaptations or variations of various implementations. Combinations of the above implementations, and other implementations not specifically described herein, will be apparent to those of skill in the art upon reviewing the description.

[0057] The Abstract of the Disclosure is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. In addition, in the foregoing Detailed Description, various features may be grouped together or described in a single implementation for the purpose of streamlining the disclosure. Examples described above illustrate but do not limit the disclosure. It should also be understood that numerous modifications and variations are possible in accordance with the principles of the present disclosure. As the following claims reflect, the claimed subject matter may be directed to less than all of the features of any of the disclosed examples. Accordingly, the scope of the disclosure is defined by the following claims and their equivalents.