A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f.sub.2 and power P.sub.2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 again; repeating above steps till the substrate being cleaned. Normally, if f.sub.1=f.sub.2, then P.sub.2 is equal to zero or much less than P.sub.1; if P.sub.1=P.sub.2, then f.sub.2 is higher than f.sub.1; if the f.sub.1<f.sub.2, then, P.sub.2 can be either equal or less than P.sub.1.

An apparatus for processing a substrate may include a drain box for receiving a solution drained in a predetermined process, a drain line for discharging the solution from the drain box to an outside, and at least one spray member for providing a gas and/or a liquid to block an air flowed into the drain box and/or to control a humidity in the drain box.

A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two surfaces and an upper edge. The upper edge is suitable for holding the disc-shaped substrates. The two surfaces have more than one hole, each forming channels, which extend to a lower drainage part of the elongated body.

A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

A wafer cleaning and drying device includes: a box used to clean the wafer, an opening is arranged at the top of the box for the wafer to enter or exit the box; a support part arranged inside the box and used to hold the wafer, the support part can move upward and downward; a spraying pipe arranged at the opening and used to spray the drying gas onto the surface of the cleaned wafer. The wafer cleaning and drying device dries the surface of the wafer with the spraying pipe arranged at the opening of the box, which sprays the drying gas onto the surface of the cleaned wafer. Understandably, Marangoni effect is used in the present prevention the water attached to the surface of the wafer is eliminated on basis of surface tension gradient difference.

A turnaround mechanism of silicon wafers is provided. The turnaround mechanism includes a material frame, a supporting component, a second clamping component. The frame is provided with a material tank. The supporting component includes at least one first clamping component, and each of the at least one first clamping component is configured to clamp or release a support. The second clamping component includes two first rotating shafts disposed oppositely and two second clamping members, the two first rotating shafts are rotatably connected to the material frame, the two second clamping members are correspondingly disposed on the two first rotating shafts respectively, and each of the two second clamping members can rotate with a corresponding first rotating shaft, enabling the two second clamping members to move toward each other to clamp the silicon wafers to be separated.

A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

The invention relates to a module for chemically processing a substrate, a method for chemically processing a substrate and a use of a module for chemically processing a substrate and in particular a large substrate. The module for chemically processing a substrate comprises: an immersion chamber, a spray unit, and a motion unit (14). The immersion chamber is configured to receive a first liquid and the substrate, so that the substrate is immersed in the liquid. The spray unit comprises a plurality of spray nozzles, which are configured to spray a second liquid within the immersion chamber. The motion unit is configured to provide a relative motion between the substrate and the spray unit.

A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two upper surfaces and an upper edge. The upper edge is configured to support a disc-shaped substrate. An upper surface of the two upper surfaces has a groove having an increasing groove depth with increasing distance from the upper edge.

A device is for drying disc-shaped substrates. The device has an elongated body having a top surface, a bottom surface, and a circumferential surface. The elongated body has a hole in the top surface forming a channel, which extends to a lower drainage part of the elongated body, and is chamfered having a chamfer depth and a chamfer angle forming an edge between the chamfer and the top surface and forming a conical recess suitable for resting a disc shaped substrate. The chamfer angle is more than 10° and less than 30°. The chamfer depth is more than 6 mm and less than 12 mm.