NONPLANAR WAFER AND METHOD FOR PRODUCING A NONPLANAR WAFER
20180001416 · 2018-01-04
Assignee
Inventors
Cpc classification
B23K26/53
PERFORMING OPERATIONS; TRANSPORTING
B23K26/40
PERFORMING OPERATIONS; TRANSPORTING
H01L21/302
ELECTRICITY
International classification
Abstract
The invention relates to a method for cutting off at least one portion (4), in particular a wafer, from a solid body (2). The method comprises at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced to form a nonplanar, in particular convex, detachment region (8) in the interior of the solid body, wherein the modifications (19) are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion (4) and a defined further treatment of the portion (4), detaching the portion (4) from the solid body (2).
Claims
1. A method for separating at least one solid body portion (4), in particular a wafer, from a solid body (2), comprising at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced, to form a non-planar, in particular convex, detachment region (8) in the interior of the solid body (2), wherein the modifications (19) are produced in dependence of predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the solid body portion (4) in dependence of a defined further treatment of the solid body portion (4), detaching the solid body portion (4) from the solid body (2).
2. The method according to claim 1, characterised in that the modifications (19) inside the crystal lattice of the solid body (2) are produced by means of radiation (6) from at least one laser, in particular a picosecond or femtosecond laser, introduced into the interior of the solid body portion (4) via an outer surface of the solid body portion (4).
3. The method according to claim 1 or 2, characterised in that the further treatment comprises the arrangement or production of a defined coating (50) on at least one surface (40, 42) of the solid body portion (4) and the predetermined parameters at least comprise data which, through which, at least indirectly, the thermal expansion coefficient of the solid body portion (4) material and the coating (50) material is included, or through which a deformation of the solid body portion (4) is included or predetermined as a result of a defined tempering of the coated (50) solid body portion (4).
4. The method according to one of the preceding claims, characterised in that, by means of the modifications (19), more than 5%, in particular more than 10% or more than 20% or more than 50% or more than 80% of the crystal lattice formed during the development of the detachment region (8) is changed, in particular damaged.
5. The method according to one of the preceding claims, characterised in that, the detachment of the solid body portion (4) from the solid body (2) comprises at least the following steps: arranging a receiving layer (10) on the solid body (2) to hold the solid body portion (4), and thermally impacting the receiving layer (10) for the, in particular mechanical, production of stresses in the solid body (2), wherein the stresses cause propagation of a crack in the solid body (2) along the detachment region (8), by which the solid body portion (4) is separated from the solid body (2).
6. The method according to claim 5, characterised in that the receiving layer (10) features or consists of a polymer, in particular PDMS, wherein the thermal impact occurs in such a way that the polymer undergoes a glass transition.
7. A method for manufacturing a multi-layer arrangement, comprising at least the following steps: providing a wafer (4) with a first, in particular convex, non-planar form; arranging or producing a further layer (50) on at least one surface (40, 42) of the wafer (4); wherein the further layer (50) and the wafer (4) have different thermal expansion coefficients, wherein the further layer (50) is arranged or produced on the surface (40, 42) of the wafer (4) at a coating temperature which is different from the target temperature, and wherein the further layer (50) is formed in such a way that on reaching the target temperature it subjects the wafer (4) to forces in such a way that the wafer (4) is deformed, from the first non-planar shape into a second shape which is different from the first shape, wherein the second shape preferably represents a planar shape.
8. The method according to claim 7, characterised in that the further layer (50) is produced by means of epitaxy.
9. The method according to claim 7 or 8, characterised in that the wafer (4) is already provided with a coating before the arrangement or production of the further layer (50).
10. A non-planar wafer (4), manufactured according to a method comprising at least the following steps: providing a solid body (2) from which to separate the non-planar wafer (4); modifying the crystal lattice of the solid body (2) by means of a modifier (18), in particular a laser, in particular a picosecond laser or a femtosecond laser, wherein a number of modifications (19) are produced in the crystal lattice in order to form a non-planar detachment region (8), wherein the modifications (19) are produced in dependence of predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the solid body portion (4) in dependence of a defined further treatment of the solid body portion (4), detaching the solid body portion (4) from the solid body (2).
11. A multi-layered arrangement (39) comprising at least: one solid body portion (4), in particular a wafer, wherein the solid body portion (4) is manufactured according to a method corresponding to one of claims 1 to 6; and at least one coating (50) arranged or produced on the solid body portion (4), wherein the coating (50) is arranged or produced on the solid body portion (4) at a coating temperature which is different from a target temperature; wherein the solid body portion (4) has at least one deformation surface with an initially non-planar first surface shape, wherein the temperature expansion coefficient of the solid body portion (4) material and the temperature expansion coefficient of the coating material are different, wherein the deformation surface of the coated solid body portion (4) forms a second surface shape at the target temperature, wherein the second surface shape and the first surface shape are different from one another, wherein the second surface shape preferably represents a planar surface shape.
Description
[0025] Further advantages, aims and characteristics of the present invention are explained below by way of the descriptions and the attached drawings in which, by way of example, the solid body manufacture or wafer manufacture according to the invention is depicted. Components or elements of the solid body manufacture or wafer manufacture according to the invention, which in the figures at least largely coincide as regards their function, may hereby be identified by the same reference symbols, wherein these components or elements do not need to be explained or labelled in all of the figures.
[0026]
[0027]
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[0029]
[0030]
[0031]
[0032]
[0033]
[0034]
[0035] Furthermore, it can be seen from this depiction that the radiation source 18 is emitting radiation towards the solid body 2. The radiation 6, according to its configuration or in dependence of prescribed parameters, penetrates a defined depth into the solid body and produces, at the respective location or at the respective predetermined location, a crystal lattice modification 19, in particular a defect. It is preferable that enough modifications or crystal lattice modifications 19 are produced that they define at least one detachment region 8. The detachment region 8 preferably has a non-planar contour or a non-planar shape, wherein the detachment region 8 particularly preferably has, at least in sections, a spherical, in particular wavy and/or convex and/or curved shape. Furthermore the rays 6 may be directed through a lens (not shown), which is preferably arranged between the radiation source 18 and the foreign body 2, for example in order to focus or bunch the radiation.
[0036] The reference symbol 9 identifies a further detachment region in the solid body 2. According to the present invention, the further detachment region 9 may equally be produced during the production of the detachment region 8. Alternatively, it is feasible that the further detachment region 9 may be produced after or before the production of the detachment region 8. The further detachment region 9 is preferably produced after the separation of the solid body portion 4 or before the separation of the solid body portion 4. Preferably, in one solid body 2, a number of solid body portions 4, 5 are defined by a number of detachment regions 8, 9, and may preferably be separated from the solid body 2 one after the other. According to a preferred embodiment of the present invention exactly or at least or at most one detachment region 8 is produced in one solid body 2. According to a further preferred embodiment of the present invention, two, at least two or exactly two, or three, at least three or exactly three, or four, at least four or exactly four, or five, at least five or exactly five or a number of, in particular for example up to 10 or 25 or 50 or 100 or 500, detachment regions are produced in the solid body 2.
[0037]
[0038] Alternatively it is feasible that the receiving layer 10 is produced on the surface of the solid body 2, for example, by means of epitaxy. The receiving layer 10 which is produced and the solid body 2 preferably have different temperature expansion coefficients. After the receiving layer 10, which in this case can also be understood as the coating 50, has been produced, a cooling of the multi-layer arrangement which has been produced follows, resulting in stresses caused by the differing thermal expansion coefficients, as a result of which the solid body portion 4 is separated or detached from the solid body 2 along the detachment region 8.
[0039]
[0040] Furthermore, according to the present invention, different detachment regions 8, 9 may have different shapes or contours. Furthermore, it is feasible that, for example, the second surface portion 16, which is a surface of the subsequently separated solid body portion 4, 5 may be brought into another shape before the separation of the solid body portion 4, 5. This change of shape may occur in an analogous manner to the separation of the solid body portion 4, 5 or be effected by a machining process, in particular a grinding process.
[0041] The present invention therefore relates to a method for manufacturing solid body layers. In this context, the method according to the invention comprises at least the steps of providing a solid body 2 for separating at least one solid body layer 4, producing modifications, such as crystal lattice defects, by means of at least one modifier, in particular a radiation source, in particular at least one laser, in particular at least one fs laser, in the interior structure of the solid body for specifying at least one detachment region 8, 9 along which the solid body layer(s) 4, 5 are separated from the solid body 2. The method according to the invention further comprises the step of thermally impacting a polymer layer 10 arranged on the solid body 2 for producing in particular mechanical stresses in the solid body 2, wherein as a result of the stresses a crack spreads in the solid body 2 along the detachment region 8, which separates the solid body layer 4 from the solid body 2.
[0042]
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[0044]
[0045]
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[0047]
[0048] Thus, according to the invention, the solid body portion 4 is shaped in dependence of the downstream treatment process, in particular the coating process, in such a way that following the treatment, in particular the coating process, the shape of one or both main surfaces 40, 42 of the solid body portion 4, changes in a defined manner, in particular flattens or becomes non-planar. In the context of the coating it is particularly preferable that this involves a metal layer or a semi-conductor layer, in particular a gallium nitride layer (GaN) or silicon layer, which is arranged or produced on a solid body portion made of silicon, sapphire, silicon carbide (SiC) or gallium arsenide (GaAs).
[0049] The invention thus concerns a method for separating a solid body portion 11, in particular a wafer, from a solid body 2. The method comprises at least the steps of:
[0050] modifying the crystal lattice of the solid body 2 by means of a modifier 18,
[0051] wherein a number of modifications 19 are produced in order to form a non-planar, in particular arched, detachment region 8 in the interior of the solid body,
[0052] wherein the modifications 19 are produced in dependence of prescribed parameters, wherein the prescribed parameters describe a relationship between a deformation of the solid body portion 4 in dependence of a defined further treatment of the solid body portion 4,
[0053] detaching the solid body portion 4 from the solid body 2.
REFERENCE LIST
[0054] 2 solid body [0055] 4 solid body portion [0056] 5 further solid body portion [0057] 6 radiation [0058] 8 detachment region [0059] 9 further detachment region [0060] 10 receiving layer [0061] 12 holding layer [0062] 14 first surface portion [0063] 16 second surface portion [0064] 18 radiation source [0065] 19 modification [0066] 20 stabilising means [0067] 30 first radiation section [0068] 32 second radiation section [0069] 34 area of defect production [0070] 40 first main surface of the solid body portion [0071] 42 second main surface of the solid body portion [0072] 44 second main surface of the multi-component arrangement [0073] 50 coating [0074] X first direction [0075] Y second direction [0076] Z third direction