A method of processing a warped workpiece includes a warpage eliminating step of applying a laser beam whose wavelength is transmittable through the workpiece to the workpiece while positioning a focused spot of the laser beam in the workpiece at a predetermined first position thicknesswise across the workpiece, thereby forming modified layers in the workpiece and cracks extending from the modified layers to a lower surface of the workpiece along all of projected dicing lines on the workpiece, thereby eliminating the warpage from the workpiece, and a modified layer forming step of, after the warpage eliminating step, applying the laser beam to the workpiece while positioning the focused spot of the laser beam in the workpiece at a position above the first position away from the lower surface of the workpiece, thereby forming modified layers in the workpiece along the projected dicing lines.

The invention relates to a method for cutting off at least one portion (4), in particular a wafer, from a solid body (2). The method comprises at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced to form a nonplanar, in particular convex, detachment region (8) in the interior of the solid body, wherein the modifications (19) are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion (4) and a defined further treatment of the portion (4), detaching the portion (4) from the solid body (2).

A method of processing a semiconductor wafer, in which a mask is formed: by cutting, with CO.sub.2 laser, a portion corresponding to a street, out of a temporary-adhesive of a surface protective tape to protect on a patterned face; carrying out dicing with SF.sub.6 plasma; and carrying out ashing, by removing a layer of the temporary-adhesive, with O.sub.2 plasma; a semiconductor chip; and a surface protective tape.

A method of processing a semiconductor wafer, in which a mask is formed: by cutting, with CO.sub.2 laser, a portion corresponding to a street, out of a temporary-adhesive of a surface protective tape to protect on a patterned face; carrying out dicing with SF.sub.6 plasma; and carrying out ashing, by removing a layer of the temporary-adhesive, with O.sub.2 plasma; a semiconductor chip; and a surface protective tape.

The present disclosure is a substrate processing apparatus including: a chamber configured to accommodate a substrate; a heat source configured to heat-treat the substrate; a heat ray sensor provided outside the chamber and configured to receive infrared rays radiated from the substrate; and an infrared ray transmission window provided in the chamber and configured to transmit an infrared ray having a wavelength greater than or equal to 8 μm to the heat ray sensor.

A method of controlling a needle actuator to interact with a cell is provided, the method comprising: providing an actuator comprising a tower, a stage and a needle, wherein the needle is mounted on the stage; applying an electrostatic potential between the tower and the stage to retract the needle; moving the actuator towards the cell; reducing the potential so as to allow the stage and needle to move towards the cell; applying calibration data to detect when the needle has pierced the cell; and reducing the potential further once it has been detected that the needle has pierced the cell. The cell can be a biological cell. The needle can be a micro-needle and the stage can be a micro-stage.

A method for adjusting wafer deformation and a semiconductor structure are provided. The method includes the following operations. A deformation position and a deformation degree of a wafer are determined. At least one groove is formed at a back of the wafer according to the deformation position and the deformation degree. A stress film having a stress effect on the wafer deformation is formed at the back of the wafer with the at least one groove, and the stress film covers an inner wall of the at least one groove.

A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film.