Memory Circuit with Leakage Compensation

Abstract

A memory array comprising a word line and a bit line is disclosed. Each of a plurality of memory cells of the memory array has a first terminal connected to the bit line and a current path between the first terminal and a respective second terminal. A first memory cell of the plurality of memory cells has the second terminal coupled to receive a first supply voltage when selected by the word line. A second memory cell of the plurality of memory cells has the second terminal coupled to receive a voltage different from the first supply voltage when the first memory cell is selected by the word line.

Claims

1. A memory array, comprising the steps of: a word line; a bit line; a plurality of memory cells, wherein each memory cell has a first terminal connected to the bit line and a current path between the first terminal and a respective second terminal; a first memory cell of the plurality of memory cells having the second terminal coupled to receive a first supply voltage when selected by the word line; and a second memory cell of the plurality of memory cells having the second terminal coupled to receive a voltage different from the first supply voltage when the first memory cell is selected by the word line.

2. The memory array of claim 1, wherein the voltage different from the first supply voltage is substantially equally to a second supply voltage less a transistor threshold voltage.

3. The memory array of claim 1, wherein the memory cells are flash electrically programmable erasable memory cells.

4. The memory array of claim 1, wherein the memory cells are read only memory (ROM) cells.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

[0006] FIG. 1 is a diagram of an exemplary memory circuit according to the present invention;

[0007] FIG. 2 is a simplified circuit diagram of memory blocks 106 and 108 of FIG. 1;

[0008] FIG. 3 is a circuit diagram of source line (SL) bias circuits 104 and 110 of FIG. 1 coupled to respective memory blocks 106 and 108;

[0009] FIG. 4 is a circuit diagram showing operation of memory sector 102 of FIG. 1 during a memory read operation according to the present invention; and

[0010] FIG. 5 is a timing diagram showing operation of memory sector 102 of FIG. 4 during the memory read operation.

DETAILED DESCRIPTION OF THE INVENTION

[0011] Referring to FIG. 1, there is a diagram of an exemplary memory circuit 100 according to the present invention. The memory circuit, often referred to as a macro, may be used for a System on a Chip (SoC), embedded memory, or stand alone memory applications. The diagram shows four memory sectors 102, 120, 130, and 140. Additional memory sectors may be included as indicated by ellipses. Each memory sector is substantially the same, so only memory sector 102 will be described in detail. In the following discussion, the same reference numerals are used to describe substantially the same circuit elements. Memory sector 102 includes memory blocks 106 and 108 and respective source line bias circuits 104 and 110 as will be described in detail. Each memory block includes N word lines (WL) and M bit lines (BL), where N and M are positive integers. Each word line corresponds to a respective row of memory cells, and each bit line corresponds to a respective column of memory cells. The choice of N and M depends on the memory requirements for a particular application. For example, N may be 256, 512, or other value and may include additional rows of memory cells for redundancy. Correspondingly M may be 256, 512, 1024, or other value and may include other columns of memory cells for redundancy or parity bits for error correction (ECC) memory. For example, N may be 256 or 512 and M may 2304, where 256 columns are dedicated to ECC parity bits

[0012] The memory circuit of FIG. 1 also includes row decode and drive circuit 114 to select appropriate word lines in response to applied address signals. A source line (SL) decode circuit 116 decodes applied address signals to control source line bias circuits 104 and 110 and may include corresponding control logic. High voltage drive circuit 118 decodes and applies high voltage signals to selected control gates (CG) and erase gates (EG) for programming and erasing memory cells of blocks 106 and 108. Circuit 112 applies write drive (WRDRIVE) signals to write date to the memory cells. Circuit 112 also includes an 8:1 multiplex circuit to selectively couple a local bit line (LBL) signal to a global bit line (GBL). The global bit line is selectively coupled to a sense amplifier in circuit 122 by global bit line multiplexer GMUX. After amplification, data signals are subsequently multiplexed by a read multiplex (RMUX) circuit to input/output (I/O) terminals of the SoC.

[0013] Referring next to FIG. 2, there is a simplified circuit diagram of memory blocks 106 and 108 of FIG. 1. Block 106 is coupled to receive word lines WL.sub.0 through WL.sub.N/2-1 and control gate leads CG.sub.0 through CG.sub.N/2-1. Block 106 is also coupled to receive bit lines BL.sub.0 through BL.sub.M-1. Block 106 includes a memory cell formed at each intersection of a respective word line and bit line such as the memory cell formed by transistors 200 and 202 and the memory cell formed by transistors 204 and 206. Transistor 202 provides access to floating gate transistor 202. Likewise, transistor 204 provides access to floating gate transistor 206. Transistors 202 and 206 have control gates coupled to receive signals CG.sub.0 and CG.sub.N/2-1, respectively. Transistors 202 and 206 also have respective floating erase gates (EG) indicated by dashed lines as is known in the art. The source of each floating gate transistor of block 106 is coupled to source line SL.sub.104 from SL BIAS circuit 104.

[0014] Block 108 is similar to block 106 and is coupled to receive word lines WL.sub.N/2 through WL.sub.N-1 and control gate leads CG.sub.N/2 through CG.sub.N-1. Block 108 is also coupled to receive bit lines BL.sub.0 through BL.sub.M-1, which are shared with block 106. A memory cell is formed at each intersection of a respective word line and bit line of block 108 such as the memory cell formed by transistors 208 and 210 and the memory cell formed by transistors 212 and 214. Transistor 208 provides access to floating gate transistor 210. Likewise, transistor 212 provides access to floating gate transistor 214. Transistors 210 and 214 have control gates coupled to receive signals CG.sub.N/2 and CG.sub.N-1, respectively. Transistors 210 and 214 also have respective floating erase gates (EG) indicated by dashed lines as is known in the art. The source of each floating gate transistor of block 108 is coupled to source line SL.sub.110 from SL BIAS circuit 110.

[0015] Turning now to FIG. 3, there is a circuit diagram of source line (SL) bias circuits 104 and 110 of FIG. 1 coupled to respective memory blocks 106 and 108. In the following discussion, transistor sizes are provided as width/length (W/L) in units of micrometers by way of explanation. One of ordinary skill in the art will understand that these transistor sizes are only provided by way of example and may vary with different values of N and M (FIG. 1). SL bias circuit 104 includes n-channel transistor 300 (3.9/0.4) connected in series with n-channel transistor 302 (1.95/0.07) between supply voltage leads VDD (horizontal line) and VSS (small triangle). SL bias circuit 104 also includes n-channel transistor 304 (3.0/0.07) connected in series with n-channel transistor 306 (1.0/1.0) between source line SL.sub.104 and supply voltage lead VSS. A common terminal 301 of transistors 300 and 302 is connected to a common terminal of transistors 304 and 306. SL bias circuit 110 is similar to SL bias circuit 104 and includes n-channel transistor 310 (3.9/0.4) connected in series with n-channel transistor 312 (1.95/0.07) between supply voltage leads VDD and VSS. SL bias circuit 110 also includes n-channel transistor 314 (3.0/0.07) connected in series with n-channel transistor 316 (1.0/1.0) between source line SL.sub.110 and supply voltage lead VSS. A common terminal 311 of transistors 310 and 312 is connected to a common terminal of transistors 314 and 316.

[0016] Operation of SL bias circuit 104 is similar to operation of SL bias circuit 110, so only operation of SL bias circuit 104 will be described in detail. Transistor 300 is coupled to receive control signal VSF104, and transistor 302 is coupled to receive complementary control signal VSF104_OFF. When memory sector 102 is not accessed, control signals VSF104 and VSF104_OFF are low and high, respectively. Thus, transistor 300 is off, transistor 302 is on, and lead 301 is driven to supply voltage VSS. Control signal VRD_BUF is held high, so transistors 304 and 306 are both on, and transistor 304 drives SL.sub.104 to supply voltage VSS at lead 301. In the same manner, control signals VSF110 and VSF110_OFF are low and high, respectively, and transistor 314 drives SL.sub.110 to supply voltage VSS at lead 311.

[0017] When a memory cell of block 108 is accessed in a read mode, control signals VSF110 and VSF110_OFF remain low and high, respectively, and SL.sub.110 remains at supply voltage VSS. Control signals VSF104 and VSF104_OFF, however, transition to high and low levels, respectively. Thus, transistor 300 is on and transistor 302 is off. Transistor 300 acts as a source follower and drives lead 301 to an n-channel transistor threshold voltage below supply voltage VDD (VDD−Vtn). Control signal VRD_BUF remains high, so transistors 304 and 306 are both on. Thus, transistor 304 drives SL.sub.104 to VDD−Vtn. Transistor 306 is a relatively high resistance transistor and acts as a bleeder or keeper device to assure lead 301 does not rise above VDD−Vtn.

[0018] SL bias circuits of the present invention are highly advantageous for several reasons. First, access time to a memory cell in block 108 is not compromised, since SL.sub.110 is held at supply voltage VSS during a read operation. Second, SL.sub.104 is raised to VDD−Vtn when the memory cell in block 108 is accessed. Thus, memory cells in block 106 connected to the same bit line as the accessed memory cell of block 108 have greatly reduced leakage current. A typical read current of an erased memory cell is approximately 25 μA. The present inventors have determined that leakage of unselected memory cells on a selected bit line of the prior art, however, may be as much as 16 μA/kbit. This excessive leakage current adversely affects the signal-to-noise ratio (SNR) of data from an accessed memory cell. By further investigation, the present inventors have determined that raising a source line of unselected memory cells on a selected bit line by as little as 200 mV above supply voltage VSS will reduce leakage current by approximately two orders of magnitude (100×), thereby greatly improving the SNR of the accessed memory cell. Third, source follower transistor 300 quickly drives lead 301 to VDD−Vtn, so leakage current is reduced prior to sensing data from the accessed memory cell. Fourth, transistor 302 assures that lead 301 will not rise to a level greater than VDD−Vtn to adversely affect reliability. Finally, the SL bias circuits of the present invention produce no static power dissipation. Moreover, SL bias circuits such as SL bias circuit 104 may include several circuits such as transistors 300 through 306, wherein each individual SL bias circuit is decoded by appropriate column address signals. Thus, source line capacitance driven by each SL bias circuit may be limited to memory cells of a few respective bit lines of a respective sector.

[0019] Turning now to FIG. 4, is a circuit diagram showing operation of memory sector 102 of FIG. 1 during a memory read operation according to the present invention. Operation of the circuit will be explained with reference to the timing diagram of FIG. 5 for a read operation of the memory cell at the intersection of WL.sub.0 and BL.sub.0. In the following discussion, transistors 400 and 402 represent all lumped memory cells in block 106 connected to BL.sub.0. Transistors 404 and 406 represent all lumped memory cells in block 108 connected to BL.sub.0. Initially, VSF104 and VSF110 are low (0.0 V) and VSF104_OFF and VSF110_OFF are high (1.2 V). VRD_BUF is high (3.0 V), so transistors 304, 306, 314, and 316 are on. Source lines SL.sub.104 and SL.sub.110, therefore, are held at VSS (0.0 V) by transistors 304 and 314, respectively. At time t0, VSF110 goes high (1.2 V), and VSF110_OFF goes low (0.0 V). As previously discussed, this drives SL.sub.110 to VDD−Vtn (0.6 V). As a result, current I.sub.LEAK through memory cell 404/406 is substantially zero. At time t1, word line WL.sub.0 goes high (1.3 V) and turns on access transistor 200 (FIG. 2). As a result, current I.sub.READ flows through memory cell 200/202, and current I.sub.LEAK×(N/2−1) flows through the unselected memory cells of block 106 connected to bit line BL.sub.0. For large N, therefore, leakage current due to unselected memory cells connected to bit line BL.sub.0 is advantageously reduced by half. Bit line BL.sub.0 is selectively coupled to one input terminal of sense amplifier 412 by local bit line multiplex circuit 408 and global bit line multiplex circuit 410. Reference current source 414 is coupled to the other input terminal of sense amplifier 412. Sense amplifier 412 is initially precharged high, so the differential current at the input terminals produces a differential input voltage. At time t2, sense amplifier enable signal SAEN goes high (1.2 V) to amplify the difference voltage. Read multiplex circuit 416 selectively applies the amplified difference voltage (DATA) to output circuit 122.

[0020] As previously discussed, SL bias circuits of the present invention substantially improve the SNR at the sense amplifier. For example, if there are 256 memory cells on BL.sub.0 (N=256), in each of blocks 106 and 108, leakage current is reduced from 8 μA to 4 μA through BL.sub.0. Read current remains approximately 25 μA, so net current at the sense amplifier is 21 μA rather than 17 μA. This is a 24% improvement in signal strength at the sense amplifier. Of course, further SNR improvement is possible by increasing the number of blocks per sector, thereby increasing the number of source lines per bit line. For example, if there are four blocks in a sector with 128 memory cells on each source line, leakage current is reduced from 8 μA to 2 μA through BL.sub.0. Read current remains approximately 25 μA, so net current at the sense amplifier is 23 μA rather than 17 μA. This is a 35% improvement in signal strength at the sense amplifier.

[0021] Still further, while numerous examples have thus been provided, one skilled in the art should recognize that various modifications, substitutions, or alterations may be made to the described embodiments while still falling with the inventive scope as defined by the following claims. For example, other circuit components may be used to increase the source line voltage of unselected memory cells on a selected bit line. Moreover, embodiments of the present invention are equally applicable to other memory circuits such as read only memory (ROM) circuits. Embodiments of the present invention may also be applied to static random access memory (SRAM) circuits or various logic circuits to reduce standby current. Other combinations will be readily apparent to one of ordinary skill in the art having access to the instant specification.