DEVICE FOR DEVIATING AND FOCUSING LIGHT
20200233223 ยท 2020-07-23
Inventors
- Oksana Shramkova (Cesson-Sevigne, FR)
- Artem Boriskin (Thourigne-Fouillard, FR)
- Laurent Blonde (Thorigne-Fouillard, FR)
Cpc classification
International classification
Abstract
The present disclosure concerns a device for generating and guiding nanojets beams from an incident electromagnetic wave on said device. The device is remarkable in that it comprises:a first layer of a dielectric material having a first refractive index value (n.sub.1);a second layer of a dielectric material having a second refractive index value (n.sub.2), wherein said second refractive index value is greater than said first refractive index value; and wherein a first boundary between said first and second layers comprises a first single step shape structure, said first single step shape structure being a change of level that is defined sensibly according to a first straight line being associated with an angle of inclination close to a first angle of inclination, wherein said device further comprising a dielectric element comprised in an embedding layer, said embedding layer being either said first layer or said second layer, said dielectric element having a refractive index (n.sub.3), higher than the one from said embedding layer, and wherein a second boundary between said dielectric element and said embedding layer comprises a second single step shape structure, said second single step shape structure being a change of level that is defined sensibly by a second straight line being associated with an angle of inclination close to a second angle of inclination, and wherein said second single step shape structure is positioned at the vicinity of said first single step shape structure for focusing nanojets beams generated by each of said first and second single step shape structures around a first focusing point.
Claims
1. A device for generating and guiding nanojets beams from an incident electromagnetic wave on said device, said device comprising: a host medium having a first refractive index value (n.sub.1); a first layer of a first dielectric material having a second refractive index value (n.sub.2), wherein said second refractive index value is greater than said first refractive index value, and wherein said first layer comprises a first single step shape structure at a boundary between said first layer and said host medium; and a dielectric element composed of a second layer of a second dielectric material and comprising a second single step shape structure, said dielectric element having a third refractive index value (n.sub.3) higher than said first refractive index value of said host medium, wherein said second single step shape structure is stacked upon said first single step shape structure, and wherein each of said first and second single step shape structures is configured such that nanojets beams generated by each of said first and second single step shape structures in response to said incident electromagnetic wave are combined and focused around a first focusing point.
2. The device of claim 1, further comprising: a third single step shape structure at the boundary, wherein said first single step shape structure and said third single step shape structure face each other and are distant from each other with a first distance; and a fourth single step shape structure, wherein said second single step shape structure and said fourth single step shape structure face each other and are distant from each other with a second distance that is smaller than said first distance, wherein said fourth single step shape structure is positioned upon said third single step shape structure, and wherein each of said third and fourth single step shape structures is configured such that nanojets beams generated by each of said third and fourth single step shape structures in response to said incident electromagnetic wave are combined and focused around a second focusing point.
3. The device of claim 2, wherein: said incident electromagnetic wave is a plane wave, said device is configured such that said plane wave incident on said device is normal to said first layer, said first single step shape structure includes a first edge, a first bottom surface, and a first base angle between said first edge and said first bottom surface, said second single step shape structure includes a second edge, a second bottom surface, and a second base angle between said second edge and said second bottom surface, and said first base angle and second base angle are equal to 90 degrees.
4. The device of claim 2, wherein said first and third single step shape structures have a same first height H.sub.1, wherein said second and fourth single step shape structures have a same second height H.sub.2, wherein said second height H.sub.2 has a value around
5. The device of claim 2, wherein: said device is configured such that said incident electromagnetic wave is a plane wave that is normal to said first layer and said dielectric element, said first single step shape structure includes a first edge, a first bottom surface, and a first base angle between said first edge and said first bottom surface, said second single step shape structure includes a second edge, a second bottom surface, and a second base angle between said second edge and said second bottom surface, and said first base angle and said second base angle are equal to an angle .
6. The device of claim 5, wherein said first and third single step shape structures have a same first height H.sub.1, wherein said second and fourth single step shape structures have a same second height H.sub.2, wherein said second height H.sub.2 has a value around
7. The device of claim 2, wherein: said device is configured such that said incident electromagnetic wave is a plane wave that hits said device with an angle of incidence .sub.i, and said first single step shape structure includes a first edge, a first bottom surface, and a first base angle between said first edge and said first bottom surface, said second single step shape structure includes a second edge, a second bottom surface, and a second base angle between said second edge and said second bottom surface, and said first base angle and said second base angle are equal to 90 degrees.
8. The device of claim 7, wherein said second refractive index value of said first layer is equal to said third refractive index value of said dielectric element, wherein said first and third single step shape structures have a same first height H.sub.1, and wherein said second distance d.sub.2 is defined according to following equation
9. The device of claim 1, wherein said third refractive index value of said dielectric element is smaller than said second refractive index value of said first layer.
10. The device of claim 1, wherein said incident electromagnetic wave has a wavelength which is equal to a value between 390 to 700 nm.
11. The device of claim 1, wherein said dielectric element has a shape that is selected from the group consisting of (i) a cuboid shape, (ii) a cylinder shape, and (iii) a prism shape.
12. The device of claim 1, wherein said host medium comprises a homogenous dielectric host medium.
13. The method of claim 1, wherein said host medium functions as an embedding layer in which at least said dielectric element comprising said second single step shape structure is embedded.
14. The method of claim 3, wherein said first single step shape structure further comprises a first top surface and said second single step shape structure further comprises a second top surface, and wherein: said first bottom surface and said first top surface of said first single step shape structure are parallel to an xy-plane, and said first edge of said first single step shape structure is parallel to a z-axis, and said second bottom surface and said second top surface of said second single step shape structure are parallel to the xy-plane, and said second edge of said second single step shape structure is parallel to the z-axis.
15. The method of claim 5, wherein said first single step shape structure further comprises a first top surface and said second single step shape structure further comprises a second top surface, and wherein: said first bottom surface and said first top surface of said first single step shape structure are parallel to an xy-plane, and said first edge of said first single step shape structure is non-vertical with respect to said first top and bottom surfaces, and said second bottom surface and said second top surface of said second single step shape structure are parallel to the xy-plane, and said second edge of said second single step shape structure is non-vertical with respect to said second top and bottom surfaces.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The above and other aspects of the invention will become more apparent by the following detailed description of exemplary embodiments thereof with reference to the attached drawings in which:
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DETAILED DESCRIPTION
[0042] The present disclosure relates to techniques for focusing electromagnetic waves (and among them visible light) and, more particularly, techniques for near-field focusing and beam forming. The present disclosure provides a specific technique for generating condensed optical nanojets beams with the aid of purely dielectric microstructures. Indeed, such technique relies on the complex electromagnetic phenomenon associated with the light diffraction on edges of a step like dielectric microstructures embedded in a host medium with refractive index lower than that of the microstructure, as already identified and explained in document in PCT patent applications PCT/EP2017/057129 and PCT/EP17/057131.
[0043] As depicted in
[0044] Hereafter, nanojets lenses having such a topology are referred as a layered step-like nanojets lenses, in contrast to the single-layer or single-step nanojets lenses presented in PCT patent applications PCT/EP2017/057129 and PCT/EP17/057131. This transformation results in the increase of the field intensity in the focal spot compared to the single step nanojets lenses. As explained in the following, depending on the lens dimensions and materials used for each layer, the increase of the field intensity can be about 10% to 25%. It should be noted that such increase of the field intensity was observed for the lenses with dimensions of about one wavelength. A larger enhancement can be obtained through a multi-parameter optimization of the step-like lens topology and materials for the lenses with bigger dimensions.
[0045] More precisely, in one embodiment of the disclosure, it is proposed to transform the shape of a nanojets lens in a such a way that all the nanojets beams, originating from different edges (associated with different layers) of the step-like microstructure, recombine and contribute to the formation of a single high-intensity nanojets beam that can be located on the axis of symmetry of the system (as depicted in
[0046] It should also be noted that an additional advantage of the proposed double-steps nanojets lens is the increase of the nanojets beam length as the result of the partial contributions of multiple nanojets beams, associated with different layers. The characteristics of these nanojets beams are controlled by the parameters of the corresponding layers (i.e. refractive index ratios between the lens and host medium, base angle and size/shape of the step).
[0047] The proposed disclosure has been validated numerically via full-wave electromagnetic analysis of a double-steps nanojets lens in a form of an infinite rib (
[0048] The general topology of the double-steps-like nanojets lens is illustrated in
[0049] Hereafter, we consider the structures with vertical edges parallel to z-axis and top/bottom surface parallel to xy-plane, which corresponds to a base angle =90 degrees. However, some prismatic structures (with arbitrary base angles) can also be used. Variation of the base angle value provides additional degree of freedom in the control of the nanojets beam radiation direction. Such variant is described later in this document.
[0050] In a first approximation, the focal length of the step-like nanojets lens can be characterized as the function of the size (width or radius) and index ratio of the media inside and outside the microstructure. In the following, we present a set of equations to estimate the optimal dimensions of the layers for maximal enhancement of the field intensity of generated nanojets.
[0051] It should be noted that the beam shape and hot spot position are sensitive to the sizes/form of the complex step-like lens. This effect is explained by the interference of the nanojets beams, associated with the bottom edge of the first step (first layer) of the system, and the nanojets beam, associated with the bottom edge of the second step (second layer). In this case, the two beams make an input into the total generated beam.
[0052] The total response of the elements with dimensions larger than a few wavelengths in the medium the lens represents the interplay between the nanojets and Fresnel diffraction phenomenon.
[0053] As it was demonstrated in PCT patent applications PCT/EP2017/057129 and PCT/EP17/057131, the beam-forming phenomenon is associated solely with the edge of the system and the nanojets beam radiation angle is defined by the Snell's low.
[0054] So, it can be determined as a function of the ratio between the refraction indexes of the host media and material of the steps, and the base angle of the element. The
[0055] For a structure where n.sub.2=n.sub.3, the nanojets beam radiation angles .sub.B1 and .sub.B2 can be determined using the approximate formula:
where
is the critical angle of refraction. Therefore, the focal length of the steps can be estimated via the following equation:
F.sub.j=W.sub.j
where j=1,2,
and W.sub.j is the half-width (radius) of a single element or step.
[0056] In order to increase the intensity in the nanojets hot spot, it is proposed to adjust the focal lengths of the constitutive elements as follows:
F.sub.1=H.sub.1+F.sub.2
[0057] Here H.sub.j is the height of the corresponding step (see in
[0058] It is necessary to note, that if materials of the steps are different, we should use this approximate formulas just for preliminary estimation of the second step size taking into account that for n.sub.3>n.sub.2>n.sub.1, .sub.B1<.sub.B2, and for n.sub.3<n.sub.2 (n.sub.2>n.sub.1 and n.sub.3>n.sub.1) .sub.B1>.sub.B2. It means that for a proper adjustment, the dimensions of the top step should be corrected: for n.sub.3>n.sub.2 the total width (radius) of the top step should be increased, for n.sub.3<n.sub.2 the total width (radius) of the top step should be less than the optimal one.
[0059] Note that the intensity of the generated nanojets beam is sensitive to the height of the bottom layer (H.sub.1). The maxima of intensity occurs at optical path difference between the nanojets beam and wave propagating in the first step given by
where k is an integer number. For the proposed system, the optical path difference in the point A (see
The dependence of the optical path difference on the nanojets beam radiation angle for four different values H.sub.1 is presented in
In
can not be fully satisfied. The analysis of in
[0060] Let us present the data obtained using the electromagnetic field simulation software package CST MICROWAVE STUDIO. The lens is assumed to be infinite along y-axis (rib-type) and is illuminated by a linearly-polarized plane wave E={0,1,0}. The materials of the steps of the nanojets lens can be the same (n.sub.2=n.sub.3). To illustrate the influence of the nanojets lens topology on the parameters of the nanojets beams, we consider the system with the following parameters: n.sub.1=1, n.sub.2=n.sub.3=1.49 (and =2.25), W.sub.1=275 nm, H.sub.1=350 nm (the dimensions of the bottom layer are arbitrary). The presented simulations were done for 2D problem.
[0061] By using the previously established equations H.sub.2W.sub.1H.sub.1 and
the optimal dimensions of the second step can be obtained: W.sub.2=107.5 nm and H.sub.2=268.8 nm.
[0062] The dependence of the maximal power density on the half-width (radius) of the second layer W.sub.2 is presented in
[0063] It can be seen that in all cases the beam width at half power (BWHP) is about 200 nm, which is below the diffraction limit which predicts the smallest possible focal spot size of about of the wavelength in the host medium. As expected, the maximum power density is observed for the nanojets lens with optimal parameters (W.sub.2=120 nm), whose focal spot BWHP is about 170 nm, which is in part explained by the improved focusing ability of the double-step nanojets lens and the shift of the focal spot inside the lens with a refractive index value higher than that of the host medium.
[0064] As we can see in
for two nanojets hot spot adjustment does not work for the case when H.sub.1,2</4. In this case, we observe two nanojets hot spots.
[0065] In order to evaluate the effect of the materials of the layers on the nanojets properties, the power density distributions have been simulated at the modified ratios
(see
[0066] Comparison of the curves in
[0067] One advantage of the proposed technique is that it enables additional degrees of freedom for the control over nanojets beam in the near zone and, in particular, it enhances the field intensity in the focal spot of the double steps nanojets lens. These degrees of freedom are provided by adding additional steps giving rise to independent nanojets beams that all together contribute to the formation of a high intensity secondary beam.
[0068] In such a case, characteristics of the secondary nanojets beam (i.e. field intensity, beam width, and orientation) are determined by the partial contribution of multiple independent beams associated with different steps.
[0069] In the case of a symmetrical structure (like the one presented in the
[0070] A few possible realizations of the step-like nanojets lenses are presented in
[0071] It should be noted that such structure can be illuminated both from the top or bottom, however, to provide the desired focusing function, material properties and dimensions of the steps must be adjusted accordingly (see
[0072] To illustrate the influence of the step-like topology on the parameters of the nanojets beams in the case of lenses with bigger dimensions, we considered the system with the following parameters: n.sub.1=1, n.sub.2=n.sub.3=1.8, W.sub.1=550 nm, H.sub.1=400 nm. The presented simulations were done for 2D problem. The nanojets lens is assumed to be infinite along y-axis (rib-type) and is illuminated by a linearly-polarized plane wave E={0,1,0}.
[0073] Using the equations H.sub.2W.sub.1H.sub.1 and
we obtain that the optimal dimensions of the second step are W.sub.2=336.2 nm and H.sub.2=689.8 nm.
[0074] The numerical simulations demonstrate that the equations H.sub.2W.sub.1H.sub.1 and
do not work in this case. First of all, to get the focal point outside the nanojets lens we should take much lower height of the second step. In the presented case, it was just H.sub.2=250 nm. Moreover, the maximal power density was observed for the smaller sizes W.sub.2. It is also necessary to note that the system is very sensitive to the wavelength of electromagnetic wave. But it is possible to see that the double steps-like topology gives more intensive total response of the system (up to 200% in the case of =450 nm for W.sub.2=200 nm) compare to the single step system of the same height (W.sub.1=W.sub.2=500 nm).
[0075] In the following, we consider the structures with non-vertical edges and top/bottom surface parallel to xy-plane. Let us assume that is the base angle for a single step/layer system (see
[0076] It was obtained that for the systems with non-vertical edges the nanojets beam radiation angle can be determined using the approximate formula:
where .sub.TIR is the critical angle of refraction from the nonvertical edge. To get the approximate formula for .sub.TIR, we must take into account the changing of the position of the edge. As the result, the nanojets beam radiation angle can be estimated as:
[0077] In order to increase the intensity in the nanojets hot spot, we can adjust nanojets beams related to the steps of the system. As the result, the formula for the radius/half width of the bottom edge of the top layer can be written as:
W.sub.2W.sub.1H.sub.1 tan .sub.B1
[0078] We have assumed that the base angle of the top layer coincides with the base angle of a bottom one. We should mention that to estimate the focal length of the steps, we should take into account electromagnetic wave refraction phenomena at the top surface of the layers. For such geometry, the equation F.sub.j=W.sub.j, previously used, gives relatively big calculating error. Moreover, all presented formulas are valid only for >90.sub.B1.
[0079] For a step-like system with the different refractive indexes of the materials of the steps and different base angles of the constitutive parts (see
[0080] The proposed concept is validated numerically via full-wave electromagnetic analysis of a step-like nanojets lens in a form of a prism, whose cross-section is represented in
[0081] By using the equation W.sub.2W.sub.1H.sub.1 tan .sub.B1, we can determine that the optimal radius of the second step for a base angle =87.2 is W.sub.2=179.6 nm. The
[0082] Let us now consider the effect of the angle of plane wave incidence on the properties of generated nanojets beam.
We assume that .sub.i is the angle of electromagnetic wave incidence.
[0083] To get the approximate formula for nanojets beam radiation angles in the case of plane wave oblique incidence on the element with refractive index n.sub.2, we should take into account that the radiation angles for opposite edges of the system are not equal (see
[0084] It is necessary to note, that for nanojets lens with the focal spot (hot spot of the total generated nanojets) inside the system, angle of total nanojets deviation can be determined as
[0085] Therefore, in order to determine the focal length of the nanojets lens with hot spot outside the system (F.sub.1), we should take into account the additional electromagnetic wave refraction at the top edge of the system. As the result, we obtain that angle of total nanojets deviation will be approximately equal to the angle of incidence .sub.i.
[0086] To increase the intensity in the nanojets hot spot, we should adjust the focal lengths of the constitutive elements of the step-like system as it was done before considering the difference between the nanojets beam radiation angles for the opposite edges of the system. As the result, the double-step system (
L.sub.1=H.sub.1 tan .sub.B1
L.sub.2=H.sub.1 tan .sub.B1
In this case additional nanojets related to the second step will be superimposed with the nanojets for a first step.
So, the parameters of the second step can be determined using the approximate formulas:
where X.sub.1 is the shift between the axis of the symmetry for the steps. The presented formulas are valid for positive angles of incidence and L.sub.2<L.sub.1. In the case of negative angles .sub.i, we obtain that L.sub.2>L.sub.1.
[0087] For nanojets beam radiation in the case of plane wave oblique incidence on the element with nonvertical edges, we should just use modified approximate equations for the radiation angles
[0088] It is necessary to note, that if materials of the steps are different (
[0089] Therefore, in order to determine the optimal geometry of double-steps nanojets lens with different materials of the steps, we should take into account that the angles of nanojets deviation by both steps are approximately equal to the angle of incidence .sub.i. So, to get the proper adjustment of the focal points in this case, it is important to determine the shift between the axis of the symmetry for the steps as
X.sub.1=H.sub.1 tan .sub.i,
and to take into account the dimensions of the second layer.
[0090] The proposed concept is validated numerically via full-wave electromagnetic analysis of a step-like nanojets lens in a form of a cylinder, whose cross-section is represented in
[0091] Using the equations L.sub.1=H.sub.1 tan .sub.B1, L.sub.2=H.sub.1 tan .sub.B1,
and X.sub.1=W.sub.1L.sub.2W.sub.2 we can determine the optimal radius of the second step which is W.sub.2=183.7 nm and shift between the axes of the symmetry for the layers is X.sub.1=31.7 nm.
[0092] The