Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
10692827 ยท 2020-06-23
Assignee
Inventors
Cpc classification
H01L2224/73204
ELECTRICITY
H01L2224/0401
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/1579
ELECTRICITY
H01L2224/73204
ELECTRICITY
H01L2224/48235
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L23/49816
ELECTRICITY
H01L2224/2919
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2224/2919
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/92125
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L24/28
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L23/3128
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/83192
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/92247
ELECTRICITY
H01L2224/11011
ELECTRICITY
H01L2224/92247
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2224/83192
ELECTRICITY
H01L23/49811
ELECTRICITY
H01L2224/81192
ELECTRICITY
H01L24/73
ELECTRICITY
International classification
H01L23/498
ELECTRICITY
Abstract
Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed. In one embodiment, a system comprises a semiconductor component including an interposer substrate, a microelectronic die over the interposer substrate, and a connection structure composed of a volume of solder material between the interposer substrate and the microelectronic die. The connection structure can include at least one of (a) a single, unitary structure covering approximately all of the back side of the microelectronic die, and (b) a structure electrically isolated from internal active features of the microelectronic die. In some embodiments, the connection structure can be positioned to provide generally consistent stress distribution within the system.
Claims
1. A system, comprising: at least one of a processor and a memory device, wherein at least one of the processor and the memory device includes a semiconductor component comprising an interposer substrate including a plurality of first terminals; a microelectronic die having an active side, a back side opposite the active side and facing toward the interposer substrate, integrated circuitry, and a plurality of second terminals at the active side and electrically coupled to the integrated circuitry, and wherein the second terminals at the active side of the microelectronic die are electrically coupled to corresponding first terminals of the interposer substrate with a plurality of wire bonds; and a connection structure composed of a volume of solder material between the interposer substrate and the microelectronic die, wherein the connection structure is attached to both the interposer substrate and the back side of the microelectronic die, wherein the connection structure includes at least one of (a) a single, unitary structure covering approximately all of the back side of the microelectronic die, and (b) a structure electrically isolated from internal active features of the microelectronic die.
2. The system of claim 1 wherein the microelectronic die is electrically coupled to one or more grounding structures of the interposer substrate via the connection structure.
3. The system of claim 1 wherein the volume of solder material comprises a plurality of pre-formed solder balls, and wherein the solder balls do not transmit signals between the microelectronic die and the interposer substrate.
4. The system of claim 1 wherein the microelectronic die further comprises a conductive layer at the back side of the microelectronic die and in contact with the connection structure.
5. The system of claim 1 wherein the volume of solder material between the interposer substrate and the microelectronic die has a generally uniform thickness.
6. The system of claim 1, further comprising an encapsulant over the interposer substrate and at least partially covering the microelectronic die, first terminals, second terminals, and wire bonds.
7. The system of claim 1 wherein the connection structure is composed of SnAgCu, SnAg, or SnAu solder.
8. The system of claim 1 wherein the connection structure is formed of a lead-free solder material.
9. The system of claim 1 wherein the microelectronic die comprises one of an imager, a filter, or a sensor.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
DETAILED DESCRIPTION
(6) Specific details of several embodiments of the disclosure are described below with reference to packaged microelectronic devices and methods for manufacturing such devices. The microelectronic devices described below include a single microelectronic die attached to a support member, but in other embodiments the microelectronic devices can have two or more stacked microelectronic dies electrically coupled to a support member. The microelectronic devices can include, for example, micromechanical components, data storage elements, optics, read/write components, or other features. The microelectronic dies can be SRAM, DRAM (e.g., DDR-SDRAM), flash-memory (e.g., NAND flash-memory), processors, imagers, and other types of devices. Substrates can be semiconductive pieces (e.g., doped silicon wafers, gallium arsenide wafers, or other semiconductor wafers), non-conductive pieces (e.g., various ceramic substrates), or conductive pieces. Moreover, several other embodiments of the invention can have configurations, components, or procedures different than those described in this section. A person of ordinary skill in the art, therefore, will accordingly understand that the invention may have other embodiments with additional elements, or the invention may have other embodiments without several of the elements shown and described below with reference to
(7)
(8)
(9) The support member 202 in the illustrated embodiment also includes an attachment feature or device 230 disposed on at least a portion of the first side 204 of the support member 202 (e.g., over at least a portion of a die attach region 220). The attachment feature 230 is used to provide the connection between the support member 202 and the die 240, as described in greater detail below. The attachment feature 230 can be composed of a solder material 231, such as a lead-free solder (e.g., a SnAgCu, SnAg, and/or SnAu solder), a solder having another composition, and/or other suitable materials or alloys of materials having the desired properties. Solder compositions generally include an electrically conductive metal and a flux composition. A wide variety of electrically conductive metals may be suitable. In one embodiment, for example, the metal is selected to form a stable metallurgical bond with the material of the die 240 to which the solder material 231 will be attached. The metal of the solder may also be selected to be mechanically and chemically compatible with the other components of the resulting microelectronic device.
(10) The solder material 231 can be deposited onto the support member 202 using a suitable deposition process, such as screen printing (e.g., depositing a solder paste through a solder stencil) or other techniques. The solder material 231 may be deposited over all or a substantial portion of the die attach region 220 on the first side 204 of the support member 202, or the solder material 231 may be deposited in a desired pattern on the support member 202 (e.g., in the form of individual, discrete volumes of solder material arranged in a pattern over the die attach region 220). Representative patterns are described below with reference to
(11) The microelectronic die 240 can be a semiconductor die or other type of microelectronic die. The die 240, for example, can be a processor, a memory device, an imager, a sensor, a filter, or other type of microelectronic device. Suitable memory devices, for example, include DRAM and flash memory devices. The die 240 includes an active or front side 242 and a back side 244 opposite the active side 242. The active or front side 242 generally refers to the side of the die 240 that is accessed during formation of the active elements of the die 240. The die 240 also includes integrated circuitry 246 (shown schematically) and a plurality of terminals 248 (e.g., bond-pads) electrically coupled to the integrated circuitry 246. The terminals 248 are arranged in an array at the active side 242 of the die 240. In the illustrated embodiment, the die 240 also includes a conductive layer 250 deposited over at least a portion of the back side 244 of the die 240. The conductive layer 250 may include, for example, a redistribution layer (RDL) applied to at least a portion of the back side 244 to facilitate wetting of the solder material 231 of the attachment feature 230. The RDL, for example, is dedicated to a function of providing a connection between the die 240 and the support member 202. In other embodiments, the conductive layer 250 may include a wettable, metalized layer over at least a portion of the back side 244 of the die 240.
(12) Referring next to
(13)
(14) An embodiment of the method described above with reference to
(15) Several embodiments of the microelectronic device 290 described above with reference to
(16)
(17) Referring next to
(18) After reflowing the solder balls 331 and conductive layer 250, a fill material 362 can be applied to the interface between the die 240 and the support member 202. The fill material can protect the connection formed between the die 240 and the support member 202 by the solder balls 331, and can prevent moisture, chemicals, and other contaminants from entering the interstitial spaces between these components. The fill material 362, for example, can wick into the spaces between the back side 244 of the die 240 and the support member 202 and around the periphery of the die 240. The fill material 362 can include a molding compound, such as an epoxy resin, or other suitable materials. After encapsulation, the assembly 360 can undergo additional processing as described above with respect to
(19) Any one of the packaged microelectronic devices described above with reference to
(20) From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the invention. For example, specific elements of any of the foregoing embodiments can be combined or substituted for other elements in other embodiments. In particular, for example, the solder-based attachment feature may initially be attached to the support member (as shown in the Figures) before being attached to the microelectronic die, or the attachment feature may initially be attached to the microelectronic die. Further, the solder material may have other shapes or forms in addition to, or in lieu of, the solder layer and solder balls described above. Moreover, in several embodiments one or more additional microelectronic dies can be stacked on the die 240 and electrically coupled to the corresponding die and/or support member. Accordingly, the invention is not limited except as by the appended claims.