Electrochemically actuatable electronic component and process for producing the actuatable electronic component
10658584 · 2020-05-19
Assignee
Inventors
Cpc classification
H10N70/245
ELECTRICITY
H10N70/011
ELECTRICITY
H10N70/253
ELECTRICITY
International classification
C23C14/16
CHEMISTRY; METALLURGY
C23C14/00
CHEMISTRY; METALLURGY
Abstract
An electrochemically actuatable electronic component comprises: a substrate; at least one first and one second actuating electrodes; at least one first and one second measuring electrodes; at least one storing electrode configured to free ions under the action of the actuating electrodes; at least one ionic conductor able to conduct the ions and that is located in a region placed between the measuring electrodes; a device suitable for: applying a voltage or a current between the first and second actuating electrodes to allow the migration of ions from the storing electrode to the first actuating electrode forming thereon an electrochemical deposition through the ionic conductor and for measuring, between the first and second measuring electrodes, a modification of at least one characteristic of the region placed between the first and second measuring electrodes, to determine at least one characteristic of the electronic component.
Claims
1. An electrochemically actuatable electronic component comprising: a substrate; at least one first and one second actuating electrodes; at least one first and one second measuring electrodes that are electrically independent from the first and second actuating electrodes; at least one storing electrode configured to free ions under the action of the actuating electrodes; at least one ionic conductor that is able to conduct said ions and that is located in a region placed between said measuring electrodes; said measuring electrodes being configured to measure at least one characteristic of said region placed between the first and second measuring electrodes; a device suitable for: applying a voltage or a current between the first and second actuating electrodes in order to allow either the migration of ions from the storing electrode to the first actuating electrode forming thereon an electrochemical deposition through the ionic conductor or the at least partial dissolution of the electrochemical deposition and for measuring, between the first and second measuring electrodes, a modification of at least one characteristic of the region placed between the first and second measuring electrodes, induced by the formation of the electrochemical deposition or by the at least partial dissolution thereof, so as to determine at least one characteristic of said electronic component.
2. The electronic component according to claim 1, wherein the ionic conductor makes contact with the storing electrode and with said first actuating electrode.
3. The electronic component according to claim 1, wherein at least said first actuating electrode is made of a material unable to form a compound with said ions.
4. The electronic component, according to claim 1, wherein the storing electrode makes contact with said second actuating electrode.
5. The electronic component according to claim 1, further comprising an electrode that is insertionally saturatable with said ions making contact with said ionic conductor and contact with said first actuating electrode.
6. The electronic component according to claim 5, wherein the storing electrode is an electrode for storing Li or Ag or Cu or Na or Mg or Al or Ca metal ions, and wherein the electrode for inserting ions is made of Si or Ge or Al, the storing electrode including Li ions.
7. The electronic component according to claim 1, wherein the actuating electrodes are positioned one with respect to the other parallelly to the substrate so as to ensure the formation of an electrodeposit in a plane orthogonal to said substrate, the measuring electrodes being positioned one with respect to the other orthogonally to the substrate.
8. The electronic component according to claim 1, wherein the actuating electrodes are positioned one with respect to the other orthogonally to the substrate so as to ensure the formation of an electrodeposit in a plane parallel to said substrate, the measuring electrodes being positioned one with respect to the other parallelly to the substrate.
9. The electronic component according to claim 1, further comprising at least one third measuring electrode and one fourth measuring electrode that are separated by said storing electrode so as to modulate the insertion and deinsertion of ions into/from said storing electrode and to measure a modification of at least one characteristic of the storing electrode.
10. The electronic component according to claim 1, further comprising an internal first passivating dielectric and/or an external second passivating dielectric, wherein any of the internal first passivating dielectric and the external second passivating dielectric comprises SiO.sub.2 or Si.sub.3N.sub.4 or Al.sub.2O.sub.3.
11. The electronic component according to claim 1, wherein the storing electrode is an electrode for storing Li or Ag or Cu or Na or Mg or Al or Ca metal ions.
12. The electronic component according to claim 11, wherein the storing electrode is made of LiCoO.sub.2.
13. The electronic component according to claim 1, wherein the storing electrode consists of a metal allowing metal ions to be freed under the action of the actuating electrodes.
14. The electronic component according to claim 1 wherein, the ionic conductor is a lithium phosphorous nitride.
15. The electronic component according to claim 1, wherein one or both of the actuating electrodes is (are) made of Cu or Pt.
16. The electronic component according to claim 1, wherein one or both of the measuring electrodes is (are) made of Ni or Cu or Mo or W or Pt or ITO conductive oxide.
17. A process for manufacturing a component according to claim 1, including the following steps: depositing and structuring at least one actuating electrode on the surface of a substrate; depositing and structuring at least one measuring electrode on the surface of said substrate; depositing and structuring a storing electrode; depositing and structuring an ionic conductor; depositing and structuring an internal passivating dielectric.
18. The process for manufacturing a tuneable component according to claim 17, wherein the storing electrode is deposited by reactive sputtering of a target, the structuring being carried out by photolithography and plasma etching.
19. The process for manufacturing a tuneable component according to claim 17, wherein the ionic conductor is deposited by reactive sputtering, the structuring being carried out by photolithography and plasma etching.
20. An assembly, including on a substrate a plurality of elementary blocks, each elementary block being independently controllable and comprising: at least one first and one second actuating electrodes; at least one first and one second measuring electrodes that are electrically independent from the first and second actuating electrodes; at least one storing electrode configured to free ions; at least one ionic conductor that is able to conduct said ions and that is located in a region placed between said measuring electrodes; said measuring electrodes being configured to measure at least one characteristic of said region placed between the first and second measuring electrodes, said assembly comprising a device suitable for: applying in each block, a voltage or a current between the first and second actuating electrodes in order to allow either the migration of ions from the storing electrode to the first actuating electrode forming thereon an electrochemical deposition through the ionic conductor or the at least partial dissolution of the electrochemical deposition and for measuring in each elementary block, between the first and second measuring electrodes, a modification of at least one characteristic of the region placed between the first and a second measuring electrodes, induced by the formation of the electrochemical deposition or by the at least partial dissolution thereof.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The invention will be better understood and other advantages will become apparent on reading the following nonlimiting description, which is given with reference to the appended figures, in which:
(2)
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(5)
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(9)
DETAILED DESCRIPTION
(10) Generally, the subject of the present invention is an electronic component that is tuneable via a new electrochemical actuating mode based on electrodeposition of a metallic layer.
(11)
(12) The operating principle of such a tuneable component is explained below.
(13) The application of a voltage U.sub.actuation between the electrodes 11 and 12 (actuating electrodes) for a time t.sub.actuation leads to the migration of ions from the electrode 3 for storing ions through the ionic conductor 4, the ions then accumulating on the surface of the electrode 11 in the form of a continuous deposit. The electrodeposition layer 8 is thus formed in at least one portion of the zone located between the two electrodes 21 and 22 (measuring electrodes), as shown in
(14) The response of the component between the two measuring electrodes 21 and 22 is thus modified because of the modification of the characteristic of the zone between the measuring electrodes 21 and 22, which is associated with the formation of the electrodeposit. The actuating electrodes 11-12 and measuring electrodes 21-22 are separate, contrary to the case of actuation by filament formation.
(15) The application of a voltage U.sub.actuation between the electrodes 11 and 12 leads to the migration of ions in the opposite direction to above, i.e. from the zone of electrodeposition on the surface of the electrode 11 to the storing electrode, and to the insertion therein once more. This operation induces a variation in the response of the component in the opposite direction to the variation induced by the application of the voltage U.sub.actuation.
(16) The tuneable component such as described has a plurality of possible states of variation in its response:
(17) a state without electrodeposit between the electrodes 21 and 22: the response of the component is directly related to the characteristics of the ionic conductor, present alone in the intermediate zone 21/22;
(18) a state with a complete electrodeposit between the electrodes 21 and 22: in this state all the ions initially present in the storing electrode 3 have migrated to the electrode 11 and formed an electrodeposit thereon;
(19) states with intermediate electrodeposits: in these various states some of the ions initially present in the storing electrode 3 have migrated to the electrode 11 and formed an electrodeposit thereon.
(20)
(21) According to one particular operating mode, the application of a current I.sub.actuation (instead of a voltage as above) between the electrodes 11 and 12 for a time t.sub.actuation is used to make the ions migrate to the electrode 11 (formation of the electrodeposit), and a current I.sub.actuation is applied for a time t.sub.actuation and is used to ensure the migration in the opposite direction (reinsertion into the storing electrode 3).
(22) According to another particular operating mode, the application of a current I.sub.actuation between the electrodes 11 and 12 for a time t.sub.actuation is used to make the ions migrate to the electrode 11 (formation of the electrodeposit), and a voltage U.sub.actuation is applied for a time t.sub.actuation and is used to ensure the migration in the opposite direction (reinsertion into the storing electrode 3).
(23) According to another particular operating mode, the application of a voltage U.sub.actuation between the electrodes 11 and 12 for a time t.sub.actuation is used to make the ions migrate to the electrode 11 (formation of the electrodeposit), and a current I.sub.actuation is applied for a time t.sub.actuation and is used to ensure the migration in the opposite direction (reinsertion into the storing electrode 3).
(24) The various aforementioned modes allow the electrodeposit to be formed in various ways to meet constraints that may be different from one application to the next. For example, the use of a high actuation current allows the electrodeposit to be formed in a very short space of time, whereas the use of a voltage allows the thickness of the formed electrodeposit to be precisely controlled.
(25) According to another variant of the invention illustrated in
(26) According to another variant of the invention illustrated in
(27) According to another variant of the invention illustrated in
(28) Advantageously it is possible to produce, according to the present invention, an assembly of tuneable electronic functions on a given substrate is illustrated in
(29) On a common substrate 7, the various blocks comprise:
(30) a pair of actuating electrodes 11i/12i;
(31) a pair of measuring electrodes 21i/22i;
(32) a storing electrode 3i;
(33) an ionic conductor 4i;
(34) an internal insulator 5i;
(35) a common external insulator 6 encapsulating all of the aforementioned elements.
(36) According to the present invention, it is thus possible to vary a number of properties that are, for example: electronic (non-volatile memories NVMs, switches, RF switch), thermal (thermal switch), optical (filters, waveguides), ferro/magneto (capacitor), etc.
(37) Exemplary Process for Producing a Tuneable Component According to the Invention:
(38) Step 1:
(39) A substrate, for example made of silicon, or of glass, or of another semiconductor, is cleaned. The cleaning may comprise a heat treating step (200 C., 15 min), followed by an RCA chemical treatment (for example based on NH.sub.4OH:H.sub.2O.sub.2 and HCl:H.sub.2O.sub.2).
(40) Step 2:
(41) Two 0.25 m-thick actuating electrodes, which are for example made of Cu or Pt, are deposited and structured. A layer of Pt deposited by PVD sputtering may be structured by photolithography and etched in an aqua regia type chemical solution (mix of HCl+HNO.sub.3).
(42) Step 3:
(43) A 0.25 m-thick measuring electrode, which is for example made of Ni, Cu, Mo, W, Pt or a transparent conductive oxide of ITO composition, is deposited and structured. A layer of Pt deposited by PVD sputtering may be structured by photolithography and etched in an aqua regia type chemical solution (mix of HCl+HNO.sub.3). The layer of the first measuring electrode may be obtained simultaneously with those of the actuating electrodes if the selected material is the same.
(44) Step 4:
(45) A 1 m-thick electrode for storing ions, which is for example an LiCoO.sub.2 oxide composition (in this precise case it is a question of storing lithium ions Li.sup.+), is deposited and structured. The LiCoO.sub.2 layer may be obtained by sputtering an LiCoO.sub.2 target under Ar and may be etched in an Ar inductively coupled plasma.
(46) Step 5:
(47) A 1.5 m-thick ionic conductor, which is for example made of LiPON (Li.sup.+ ion conduction), is deposited and structured. The LiPON layer may be deposited by reactive sputtering of a Li.sub.3PO.sub.4 target under nitrogen N.sub.2, structured by photolithography and etched in an Ar inductively coupled plasma.
(48) Step 6:
(49) A 1 m-thick passivating dielectric, which is for example made of SiO.sub.2, Si.sub.3N.sub.4, Al.sub.2O.sub.3 or a polymer, is deposited and structured. For example, a layer of Si.sub.3N.sub.4 may be deposited by PECVD, structured by photolithography and etched in an Ar inductively coupled plasma.
(50) Step 7:
(51) A 0.25 m-thick second measuring electrode, which is for example made of Ni, Cu, Mo, W, Pt or a transparent conductive oxide of ITO composition, is deposited and structured. A layer of Pt deposited by physical vapour phase (PVD) sputtering may be structured by photolithography and etched in an aqua regia type chemical solution (mix of HCl+HNO.sub.3).
(52) Step 8:
(53) A 2 m-thick passivating dielectric, which is for example made of SiO.sub.2, Si.sub.3N.sub.4, Al.sub.2O.sub.3 or a polymer, is deposited and structured. For example, a layer of Si.sub.3N.sub.4 may be deposited by plasma-enhanced chemical vapour deposition (PECVD), structured by photolithography and etched in an Ar inductively coupled plasma.
(54) The advantages of the present invention are outlined in Table 2 below and their benefit is especially seen:
(55) in terms of geometry, which is: volumic (thin layer), continuous and able to ensure a contact over a large area and/or height;
(56) in terms of modulation ratio, which is: high insofar as the two extreme states are associated with two intrinsically different materials (the ionic conductor and the electrodeposit);
(57) in terms of intermediate states: possible states corresponding to a certain thickness of the formed electrodeposition layer, said thickness theoretically being controllable on the nanoscale;
(58) in terms of response time, which is: shorter than in the case of an electrochemical actuation by insertion, because the diffusion occurs only within a single electrode contrary to systems comprising two electrodes.
(59) TABLE-US-00002 TABLE 2 Comparison of the performance of tuneable components (prior art vs. invention) with respect to the actuating mode implemented. Electrochemical Electrochemical actuation by actuation by insertion filament formation Invention Geometry 2D/3D (+) 1D () 2D/3D (+) Modulation Average () High (+) High (+) ratio Intermediate Yes (+) No () Yes (+) states Response >100 s () <1 s (+) 1-100 s time Actuation low (1-2 V) (+) low (1-2 V) (+) low (1-2 V) (+) voltage Energy low (0.1-1 J) (+) low (0.1-1 J) (+) low (0.1-1 J) (+) consumption
(60) By virtue of the present invention, it is thus possible to design tuneable electronic components that may especially be resistive, or capacitive or inductive.
(61) They may also be electrical microswitches (switches), radiofrequency electrical microswitches (RF switches), thermal valves or microswitches, non-volatile memory, non-volatile multiple valued logic memories (multiple valued logic memories).