GAS SENSOR

Abstract

A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

Claims

1. A gas sensing device comprising; a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

2. A gas sensing device according to claim 1, wherein the polysilicon electrodes are configured to measure a resistance of the material for sensing a gas.

3. A gas sensing device according to claim 1, wherein the polysilicon electrodes are highly doped.

4. A gas sensing device according to claim 1, wherein the polysilicon electrodes comprise a plurality of interdigitated structures.

5. A gas sensing device according to claim 4, wherein a width of at least some of the interdigitated structures and/or the distance between adjacent interdigitated structures within the plurality of interdigitated structures have submicrometre dimensions.

6. A gas sensing device according to claim 1, wherein the polysilicon electrodes are formed in a CMOS compatible process.

7. A gas sensing device according to claim 1, wherein at least one of the polysilicon electrodes is in direct contact with the material for sensing a gas.

8. A gas sensing device according to claim 1, wherein the device comprises a flip-chip configuration.

9. A gas sensing device according to claim 1, wherein the heater comprises a CMOS material, and optionally wherein the CMOS material is any of polysilicon, platinum, titanium, tungsten, or a combination of these.

10. A gas sensing device according to claim 1, wherein the heater is formed underneath the polysilicon electrodes.

11. A gas sensing device according to claim 1, wherein the dielectric membrane comprises an etched recess portion, and wherein the material for sensing a gas is located within the etched recess portion of the dielectric membrane.

12. A gas sensing device according to claim 1, wherein the polysilicon electrodes comprise a first polysilicon layer, and wherein the heater comprises a second polysilicon layer.

13. A gas sensing device according to claim 1, wherein the polysilicon electrodes comprise a first polysilicon layer and a second polysilicon layer.

14. A gas sensing device according to claim 1, wherein the polysilicon electrodes comprise: a first pair of electrodes comprising interdigitated electrodes, and a second pair of electrodes interleaving between the first pair of electrodes.

15. A gas sensing device according to claim 14, wherein the first pair of electrodes are configured such that a current bias is applied across them, and wherein the second pair of electrodes are configured to measure a voltage between the second pair of electrodes.

16. A gas sensor array assembly comprising an array of a plurality of gas sensing devices according to claim 1, wherein the plurality of devices are formed on the same chip.

17. A method of manufacturing a gas sensing device, the method comprising: forming a substrate; forming a dielectric layer disposed on the substrate; forming a heater within the dielectric layer; forming an etched cavity portion within the substrate; forming a material for sensing a gas; and forming one or more polysilicon electrodes coupled with the material for sensing a gas.

18. A method of manufacturing a gas sensing device according to claim 17, wherein forming one or more polysilicon electrodes comprises: forming a field stop oxide layer in a CMOS compatible process; forming one or more polysilicon electrodes on or above the field stop oxide layer; and etching the field stop oxide layer.

19. A method of manufacturing a gas sensing device according to claim 17, wherein forming one or more polysilicon electrodes comprises: forming a first polysilicon layer comprising a first pair of electrodes in a CMOS compatible process; and forming a second polysilicon layer comprising a second pair of electrodes in a CMOS compatible process.

Description

BRIEF DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0071] Some preferred embodiments of the disclosure will now be disclosed by way of example only and with reference to the accompanying drawings, in which:

[0072] FIG. 1 illustrates a gas sensing device according to the state of the art;

[0073] FIG. 2 shows a schematic cross-section of a gas sensor based on a micro-hotplate according to one embodiment;

[0074] FIG. 3 shows a schematic cross-section of an upside-down gas sensor wherein a recess is formed within the dielectric membrane according to one embodiment;

[0075] FIG. 4 shows a schematic cross-section of an upside-down gas sensor, where the polysilicon electrodes are within the sensing layer instead of at the bottom of the sensing layer according to one embodiment;

[0076] FIG. 5 shows a schematic cross-section of an upside-down gas sensor flip-chip connected to another chip such as an ASIC according to one embodiment;

[0077] FIG. 6 shows an alternative structure for an upside-down gas sensor flip-chip connected to another chip in the form of an ASIC according to one embodiment;

[0078] FIG. 7 shows a schematic cross-section of an array of upside-down gas sensors flip chip connected to another chip;

[0079] FIG. 8 shows a schematic cross-section of an alternative gas sensor where the membrane recess is present on the top side of the membrane rather than the bottom side according to one embodiment;

[0080] FIG. 9 shows a schematic cross-section of an alternative gas sensor with a ring metal heater;

[0081] FIG. 10 shows a top view of polysilicon electrodes according to one embodiment;

[0082] FIG. 11 shows measurements illustrating polysilicon electrodes forming an Ohmic contact to a metal oxide according to one embodiment;

[0083] FIG. 12 illustrates an exemplary flow diagram outlining the manufacturing method of the gas sensor; and

[0084] FIGS. 13A-C illustrate exemplary manufacturing steps of a gas sensor according to one embodiment, wherein:

[0085] FIG. 13A shows the dielectric membrane with polysilicon electrodes, etch stop layers, and a heater embedded within the membrane;

[0086] FIG. 13B shows the device of FIG. 13A which has then been exposed from the back side to an etchant forming a recess within the dielectric membrane; and

[0087] FIG. 13C shows the device of FIG. 13B which has then been flipped upside down with a sensing material confined within the etched recess.

[0088] FIG. 14 illustrates further electrode arrangements that may be used.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0089] Some examples of the device are given in the accompanying figures.

[0090] FIG. 2 shows a cross section of an exemplary gas sensor 1. The gas sensor 1 comprises a dielectric layer 3 supported by a semiconductor substrate 41 which has an etched portion 6 and a substrate portion 4. In one example, the semiconductor substrate 41 can be made of silicon or silicon carbide. The dielectric layer 3 has a dielectric membrane region or area 13, which is located immediately or directly adjacent or next to the etched portion or cavity 6 of the substrate 41. In one example, the dielectric layer 3 can be made from a material such as silicon oxide, nitride, or a combination of these. The dielectric membrane area 13 corresponds to the area of the dielectric layer 3 (directly) above or below the etched portion 6. The substrate 41 is etched by DRIE to form the etched portion or cavity 6.

[0091] A gas sensing material 7 is deposited or grown on the dielectric membrane 13. The gas sensing material 7 makes electrical contact to a pair of interdigitated polysilicon electrodes 5 which are formed within the dielectric layer 3. The polysilicon electrodes are configured to measure resistance and/or capacitance of the gas sensing material 7. A heater 2 and heater tracks 23 are embedded within the dielectric layer 3, which when powered raises the temperature of the gas sensing MOX layer 7. The heater 2 is formed within the dielectric membrane area 13. In this embodiment, the heater 2 is a micro-heater and can be made from a metal such as Tungsten, Platinum, Gold, or Titanium.

[0092] In one example, the gas sensing material 7 can be a metal oxide such as tin oxide, tungsten oxide, Alumina oxide, zinc oxide, copper oxide, a combination of those metal oxides, or other metal oxides. In further examples, the gas sensing material 7 can be un-doped or doped with elements such as platinum (Pt) or palladium (Pd). Alternatively, the gas sensing material could be a polymer or a nanomaterial such as carbon nanotubes or metal oxide nanowires.

[0093] The use of polysilicon for the electrodes allows the whole gas sensing device to be manufactured using CMOS compatible processes. Polysilicon electrodes can be manufactured to sub-micrometre dimensions, allowing greater length of electrode to be packed into a smaller area, with higher aspect ratio. The plurality of polysilicon electrodes may be formed of a first polysilicon layer, and the heater may be formed of a second polysilicon layer.

[0094] FIG. 3 shows an alternative gas sensor in which the sensor has an upside-down configuration. The dielectric membrane region 13 is patterned or etched such there is a recess 50 in the dielectric membrane region 13 for the gas sensing MOX material 7 to be positioned or confined, when deposited from one side (e.g., from the back side) of the dielectric membrane region 13. An etch stop layer 8 is formed within the dielectric membrane region 13, below the polysilicon electrodes 5. A further etch stop layer 12 is formed on the top of the dielectric membrane region 13, except at the region where the gas sensing material 7 is to be formed. The etch stop layers 8, 12 may be silicon nitride or any other material having a higher resistance to the etchant used to etch the semiconductor substrate 4 and/or the dielectric membrane 13. The silicon nitride layers 8, 12 act as an etch stop, allowing a recess 50 to be etched in the membrane 13. The silicon nitride layers 8, 12 also provide stress relief and define the cavity 6. The gas sensing material 7 is formed within the etched recess 50, on the dielectric membrane region 13. It will be understood that the etch stop layers 8, 12 may be formed of silicon nitride or may be formed of other materials which have different etch selectivity to the rest of the membrane.

[0095] A gas sensing material 7 is deposited or grown within the substrate cavity 6, in the recess 50 of the dielectric membrane 13. The polysilicon electrodes 5 are in direct contact with the gas sensing material 7. The heater is formed below or underneath the polysilicon electrodes. In the manufacturing process, a high temperature is used for deposition of the polysilicon electrodes. This upside-down sensor configuration allows the polysilicon electrodes to be formed using high temperature without damaging the metal heater underneath. This is because in the upside down configuration, the polysilicon sensing electrodes are deposited before the metal heater, and so the high deposition temperature of the polysilicon cannot damage the heater. Since the device is then turned upside down after fabrication, the polysilicon electrodes are then above the heater.

[0096] The gas sensor 1 is formed in a flip-chip configuration. The gas sensor can be placed above a circuit (e.g. an application specific integrated circuit (ASIC) or printed circuit board (PCB)), using Solder balls, solder bumps, copper pillars, or stud bumps 9 for connection. The solder balls 9 are typically placed on solderable pads, 10, and can be formed within the CMOS process or post-CMOS at wafer level or chip level on both the IR device and the ASIC.

[0097] FIG. 4 shows an alternative gas sensor in which the polysilicon electrodes 5 are located vertically within the MOX sensing layer 7. In other words, the polysilicon electrodes 5 extend laterally from a middle portion of each side wall of the MOX sensing layer 7. Many features of the gas sensor of FIG. 4 are the same as those in FIG. 3, and therefore carry the same reference numerals. In this embodiment, the silicon nitride layer 8 is formed deeper in the dielectric layer 3 than the polysilicon electrodes 5. This allows the etching to continue further into the dielectric membrane area 13, and means that part of the MOX gas sensing material 7 is below the polysilicon electrodes 5. This allows more contact between the gas sensing material 7 and the sensing electrodes 5. In this embodiment, the silicon nitride layer 12 extends across the whole width of the dielectric 3 or the gas sensor 1. The silicon nitride layers 8, 12 help to relieve stress within the device

[0098] FIG. 5 shows an alternative gas sensor, in which the gas sensor is attached by a flip-chip to a second chip, such as an ASIC. Many features of the gas sensor of FIG. 5 are the same as those in FIG. 4 and therefore carry the same reference numerals. In this embodiment gas sensor 1 is attached to an ASIC chip 11 by solder balls 9 and solderable pads 10. This chip has driving, read out, transducing, and processing circuitry. It may include analogue, digital, or mixed signal analogue and digital circuits. It may also include humidity and/or temperature and/or pressure sensors. It may include memory blocks and state machines.

[0099] In this embodiment, a substantial part of the gas sensing MOX material, 7 is underneath or below the polysilicon electrodes 5, which means that the polysilicon electrodes 5 are closer to the surface of MOX material 7. Thin gas sensing MOX layers have increased sensitivity in comparison with thicker MOX layers. Using traditional inkjet or drop coating techniques on plain surfaces without a cavity, results in relatively thick and uncontrolled sizes of the MOX layer 7. In this gas sensor the effect of embedding, partly or entirely, the MOX within the membrane has the advantage of an equivalent thinner layer (with the polysilicon electrodes closer to the MOX surface that is exposed to the gas) and more controlled size of MOX layer.

[0100] FIG. 6 shows an alternative gas sensor, in which the gas sensing material is only formed in the spacing between the polysilicon electrodes, and not below the polysilicon electrodes. Many of the features of the gas sensor of FIG. 6 are the same as those shown in FIG. 5, and therefore carry the same reference numerals.

[0101] FIG. 7 shows an array of gas sensors in a flip-chip configuration, according to one embodiment. Many of the features of FIG. 7 are the same as those shown in FIG. 6, and therefore carry the same reference numerals. This can be any number of sensors 1, 21, each having either the same MOX gas sensing 7, 27 material, or a different MOX gas sensing material, and may be operated at different temperatures and different driving conditions. The gas sensors are formed within the same dielectric layer 3, on separate dielectric membranes 13, 33. The membranes 13, 33 can also be of different sizes within the array.

[0102] FIG. 8 shows an alternative gas sensor with a non flip-chip configuration. Many of the features of FIG. 8 are the same as those shown in FIG. 5, and therefore carry the same reference numerals. In this embodiment, the front side of the dielectric membrane region 13 is etched to form a recess 50 in the dielectric membrane. The gas sensing MOX material 7 is formed partly or fully embedded in the dielectric membrane. The gas sensor can be connected to an ASIC using wire bonding or Through Silicon Vias (not shown).

[0103] FIG. 9 shows an alternative gas sensor in which the electrodes 5 have a ring formation. This embodiment is not formed in a flip-chip configuration, and so can be packaged in a conventional way. In this configuration the polysilicon is deposited before the metal heater. Therefore, the high temperatures required during polysilicon deposition don't affect the metal heater.

[0104] FIG. 10 illustrates a top view of the polysilicon electrodes according to one embodiment. A first pair of interdigitated polysilicon electrodes 120, 121 is configured such that a current bias is applied across them, and a second pair of interleaving electrodes 122, 123 is configured to measure a voltage. The first pair of electrodes 120, 121 has an interdigitated (finger) structure. The second pair of electrodes 122, 123 interleave between fingers of the first pair of electrodes 120, 121. The width of each of the interdigitated or interleaved electrode structures and/or the distance between adjacent electrode structures has preferably sub-micrometre dimensions. Patterning techniques for polysilicon allow this resolution of the interdigitated electrode structure, meaning the electrodes can be packed or fitted into a small area.

[0105] CMOS technologies offer the polysilicon width (which normally defines the length of the MOS gate of CMOS transistors) as the smallest dimension controllable in the manufacturing process. Therefore polysilicon electrodes with widths of sub microns can be formed. The distance between adjacent fingers of the electrode pair could also be of sub-micrometres. This high aspect ratio results in a much denser structure of electrodes which further lowers the resistance of the gas sensing layer. This is particularly useful in situations where the resistances of the MOX layers are very high (M range) and the high aspect ratio allows them to be reduced to below 1 M.

[0106] This 4-wire measurement configuration allows the resistance of the gas sensing material 7 to be measured while cancelling out effects of contact resistances. This results in improved sensitivity of the gas sensing device. This also lowers the sensing resistances, therefore making the measurement circuit less complex.

[0107] FIG. 11 shows the measured current-voltage (I-V) characteristics of the metal oxide when a single pair of polysilicon interdigitated electrodes is used. The measurements show an Ohmic contact between the polysilicon and the MOX.

[0108] FIG. 12 illustrates an exemplary flow diagram outlining the manufacturing method of the gas sensor. The steps generally performed are described below. It will be appreciated that the steps below could be sequential or non-sequential:

[0109] Step 1 (S1): Start with a substrate.

[0110] Step 2 (S2): Deposit a dielectric layer with embedded heater and polysilicon electrodes. Etch stop layers may also be formed.

[0111] Step 3 (S3): Etch substrate to form a cavity.

[0112] Step 4 (S4): Deposit metal oxide sensing layer within the recess.

[0113] In embodiments where the membrane has an etched recess, the method may also include a step of etching the dielectric layer. This may be done using the etch stop layers, as the etchant will not etch the stop layers or the electrodes. This may be carried out in a single step with step 2, by using a deep reactive ion etch for the cavity etch followed by a wet oxide etch for the recess.

[0114] FIGS. 13A-C show some example steps of forming the recess and exposing the sensing electrodes, according to one embodiment of the disclosure.

[0115] FIG. 13A shows the dielectric membrane 13, with polysilicon electrodes 5 and heater 2 embedded within the membrane 13. Layers 8 and 12 are made from a material that has different etching properties to that of the dielectric layer 3.

[0116] FIG. 13B shows the device of FIG. 13A which has then been exposed from the back side to an etchant that has a high etching rate to the membrane, but a low etching rate to layers 8 and 12. This etches the dielectric layer below the etch stop layers 8, 12 forming a recess.

[0117] FIG. 13C shows the device of FIG. 13B which has then been flipped upside down. A sensing material 7 has been deposited so that it is confined within the recess.

[0118] FIG. 14, part (a) illustrates an electrode configuration with four rectangular parallel electrodes. In this arrangement current bias is applied to the two outer most electrodes, and voltage is measured on the two inner electrodes.

[0119] FIG. 14, part (b) and 14, part (c) illustrates further arrangements of the electrodes that may be used.

[0120] The description of the reference numerals used in the above description is as follows: [0121] 1. Gas sensor [0122] 2. Embedded micro-heater embedded in the dielectric membrane [0123] 23. Heater tracks [0124] 3. Dielectric layer [0125] 13. Dielectric membrane area [0126] 4. Semiconductor substrate [0127] 41. Substrate portion [0128] 5. Polysilicon interdigitated electrodes [0129] 6. Cavity within the substrate [0130] 7. Metal oxide sensing layer [0131] 8. Silicon nitride layers (below polysilicon electrodes) [0132] 9. Solder balls, solder bumps, copper pillars or stud bumps [0133] 10. Solderable pads [0134] 11. ASIC. [0135] 12. Silicon nitride layers (on the surface of the dielectric membrane) [0136] 50. Recess within the dielectric membrane [0137] 21. Gas sensor [0138] 22. Embedded micro-heater embedded in the dielectric membrane [0139] 24. Semiconductor substrate [0140] 25. Polysilicon interdigitated electrodes [0141] 26. Cavity within the substrate [0142] 27. Metal oxide sensing layer [0143] 28. Silicon nitride layers (below polysilicon electrodes) [0144] 32. Silicon nitride layers (on the surface of the dielectric membrane) [0145] 120. Interdigitated polysilicon electrode 120 [0146] 121. Interdigitated polysilicon electrode [0147] 122. Interleaving electrode [0148] 123. Interleaving electrode

[0149] The skilled person will understand that in the preceding description and appended claims, positional terms such as above, overlap, under, lateral, vertical, etc. are made with reference to conceptual illustrations of a sensing device, such as those showing standard cross-sectional perspectives and those shown in the appended drawings. These terms are used for ease of reference but are not intended to be of limiting nature. These terms are therefore to be understood as referring to a sensing device when in an orientation as shown in the accompanying drawings.

[0150] Although the invention has been described in terms of preferred embodiments as set forth above, it should be understood that these embodiments are illustrative only and that the claims are not limited to those embodiments. Those skilled in the art will be able to make modifications and alternatives in view of the disclosure which are contemplated as falling within the scope of the appended claims. Each feature disclosed or illustrated in the present specification may be incorporated in the invention, whether alone or in any appropriate combination with any other feature disclosed or illustrated herein.