Sapphire and glass laminates with a gradient layer
10639867 ยท 2020-05-05
Assignee
Inventors
- Que Anh S. Nguyen (San Jose, CA, US)
- Dale N. Memering (San Francisco, CA, US)
- Christopher D. Jones (Los Gatos, CA, US)
- Matthew Rogers (San Jose, CA, US)
Cpc classification
B32B9/04
PERFORMING OPERATIONS; TRANSPORTING
B32B7/10
PERFORMING OPERATIONS; TRANSPORTING
G06F3/0488
PHYSICS
B32B15/20
PERFORMING OPERATIONS; TRANSPORTING
B32B5/145
PERFORMING OPERATIONS; TRANSPORTING
B32B9/005
PERFORMING OPERATIONS; TRANSPORTING
B32B17/06
PERFORMING OPERATIONS; TRANSPORTING
International classification
B32B15/20
PERFORMING OPERATIONS; TRANSPORTING
B32B9/00
PERFORMING OPERATIONS; TRANSPORTING
B32B17/06
PERFORMING OPERATIONS; TRANSPORTING
G06F3/0488
PHYSICS
B32B7/10
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A sapphire sheet is laminated to a glass sheet with a gradient layer that transitions from a composition of predominantly Al.sub.2O.sub.3 at the sapphire sheet to a composition of predominantly SiO.sub.2 at the glass sheet. The gradient layer chemically bonds to both the sapphire sheet and the glass sheet and has no distinct interfaces.
Claims
1. An electronic device including a transparent cover glass, the electronic device comprising: a housing; a display positioned within the housing; a cover glass disposed over the display and attached to the housing, the cover glass comprising: a sapphire sheet; a glass sheet; and a gradient layer disposed between the sapphire sheet and the glass sheet and that transitions from a composition that is predominantly Al.sub.2O.sub.3 at the sapphire sheet to a composition that is predominantly SiO.sub.2 at the glass sheet, and wherein the gradient layer includes a first region including nanocrystalline Al.sub.2O.sub.3 positioned proximate the sapphire sheet and a second region including amorphous Al.sub.2O.sub.3 positioned between the nanocrystalline Al.sub.2O.sub.3 and the glass sheet.
2. The electronic device of claim 1 wherein the gradient layer gradually transitions from a composition that is predominantly Al.sub.2O.sub.3 at the sapphire sheet to a composition that is predominantly SiO.sub.2 at the glass sheet.
3. The electronic device of claim 1 wherein the gradient layer is between 25 and 300 nanometers thick.
4. A glass and sapphire laminate comprising: a sapphire sheet; a glass sheet; and a gradient layer disposed between the sapphire sheet and the glass sheet and that transitions from a composition that is predominantly Al.sub.2O.sub.3 at the sapphire sheet to a composition that is predominantly SiO.sub.2 at the glass sheet, and wherein the gradient layer includes a first region including nanocrystalline Al.sub.2O.sub.3 positioned proximate the sapphire sheet and a second region including amorphous Al.sub.2O.sub.3 positioned between the nanocrystalline Al.sub.2O.sub.3 and the glass sheet.
5. The laminate of claim 4 wherein the Al.sub.2O.sub.3 nanocrystals have a crystalline orientation that matches a crystalline orientation of the sapphire sheet.
6. The laminate of claim 4 wherein the Al.sub.2O.sub.3 nanocrystals have a crystalline orientation that is different from a crystalline orientation of the sapphire sheet.
7. The laminate of claim 4 wherein when moving in a direction away from the sapphire sheet, the gradient layer transitions from the layer of Al.sub.2O.sub.3 nanocrystals to a mixture of Al.sub.2O.sub.3 nanocrystals and amorphous Al.sub.2O.sub.3.
8. The laminate of claim 7 wherein when moving in a direction away from the sapphire sheet, the gradient layer transitions from the mixture of Al.sub.2O.sub.3 nanocrystals and amorphous Al.sub.2O.sub.3 to predominantly amorphous SiO.sub.2.
9. The laminate of claim 4 wherein the gradient layer gradually changes in chemical composition from predominantly Al.sub.2O.sub.3 to predominantly SiO.sub.2.
10. The laminate of claim 4 wherein the gradient layer is between 25 and 300 nanometers thick.
11. The laminate of claim 4 wherein the sapphire sheet is between 5 and 100 microns thick.
12. The laminate of claim 4 wherein the glass sheet is between 100 and 1000 microns thick.
13. The laminate of claim 4 wherein the gradient layer is a first gradient layer and the laminate further comprises a second gradient layer that is disposed on the sapphire sheet on a side opposite of the first gradient layer.
14. A method of bonding a sapphire sheet to a glass sheet, the method comprising: depositing a gradient layer on a first surface of the sapphire sheet, wherein the gradient layer is predominantly composed of Al.sub.2O.sub.3 at the sapphire sheet and transitions to predominantly SiO.sub.2 at an outer surface of the gradient layer; annealing the sapphire sheet and the gradient layer at a temperature sufficient to chemically bond the gradient layer to the sapphire sheet; disposing a glass sheet on the outer surface of the gradient layer; and annealing the glass sheet, the gradient layer and the sapphire sheet at a temperature sufficient to chemically bond the glass sheet to the gradient layer, and wherein the gradient layer includes a first region including nanocrystalline Al.sub.2O.sub.3 positioned proximate the sapphire sheet and a second region including amorphous Al.sub.2O.sub.3 positioned between the nanocrystalline Al.sub.2O.sub.3 and the glass sheet.
15. The method of claim 14 wherein the gradient layer is deposited as an amorphous layer having a substantially linear gradient that varies from predominantly Al.sub.2O.sub.3 at the sapphire sheet to predominantly SiO.sub.2 at an outer surface of the gradient layer.
16. The method of claim 14 wherein the sapphire sheet is annealed at a temperature above a softening point of the glass sheet.
17. The method of claim 14 wherein annealing the sapphire sheet and the gradient layer causes a layer of Al.sub.2O.sub.3 nanocrystals to form at an interface between the gradient layer and the sapphire sheet.
18. The method of claim 14 wherein the gradient layer is also deposited on a second surface of the sapphire sheet that is opposite the first surface.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
DETAILED DESCRIPTION
(11) Some embodiments of the present disclosure relate to a cover glass that can be used in an electronic device, such as a smart phone or tablet computer. While the present disclosure can be useful for a wide variety of configurations, some embodiments of the disclosure are particularly useful for a cover glass made from a laminate of glass and sapphire sheets bonded together with a gradient layer that transitions from a composition of predominantly Al.sub.2O.sub.3 at the sapphire sheet to a composition of predominantly SiO.sub.2 at the glass sheet. The laminate of glass and sapphire can exhibit improved optical properties and reliability as compared to traditional cover glass configurations.
(12) For example, in some embodiments a gradient layer is deposited on one surface of a sapphire sheet. The gradient layer is amorphous and transitions from a composition of predominantly Al.sub.2O.sub.3 at the sapphire sheet to a composition of predominantly SiO.sub.2 at the opposite surface. A first annealing process is performed that chemically bonds the gradient layer to the sapphire sheet and forms Al.sub.2O.sub.3 nanocrystals at the sapphire surface. The glass sheet is then placed on the opposite surface, that is predominantly SiO.sub.2, of the gradient layer and a lower temperature second annealing step is performed to chemically bond the glass sheet to the gradient layer.
(13) In order to better appreciate the features and aspects of laminated sapphire and glass cover glass for electronic devices according to the present disclosure, further context for the disclosure is provided in the following section by discussing one particular implementation of an electronic device according to embodiments of the present disclosure. These embodiments are for example only and other embodiments can be employed in other electronic devices such as, but not limited to computers, watches, media players and other devices.
(14)
(15)
(16)
(17) Sapphire sheet 310 can form an outer surface 335 of cover glass 105 when the cover glass is incorporated into an electronic device, such as electronic device 100 illustrated in
(18) In some embodiments, gradient layer 330 is a layer that gradually changes in composition from predominantly Al.sub.2O.sub.3 at a first interface 370 (between sapphire sheet 310 and gradient layer 330) to predominantly SiO.sub.2 at a second interface 380 (between glass sheet 320 and gradient layer 330). The gradual change in composition allows gradient layer 330 to chemically bond to both sapphire sheet 310 and glass sheet 320 forming a reliable and solid composite structure. Further, since gradient layer 330 has no distinct interfaces and gradually changes in composition, it exhibits less internal reflection than there would be if sapphire sheet 310 were directly bonded to glass sheet 320. Therefore, gradient layer 330 provides a reliable interface between sapphire sheet 310 and glass sheet 320, with a low amount of internal reflection.
(19) In some embodiments, as shown in
(20) In some embodiments, glass sheet 320 can be a transparent glass sheet that can be made from any glass material, including chemically strengthened glass. In one embodiment glass sheet 320 is made from silicon dioxide (SiO.sub.2). In another embodiment glass sheet 320 is made from blue glass that blocks at least a portion of the infra-red spectrum. Any other type of glass can be used including glass having one or more coatings applied to it that limit reflection and/or transmission of certain wavelengths of light. While embodiments of the disclosure are not limited to any particular thickness of glass sheet 320, in some embodiments the glass sheet is between 100 to 1000 microns thick, while in other embodiments the glass sheet is between 300 to 800 microns thick and in further embodiments the glass sheet is between 400 to 700 microns thick.
(21) In some embodiments, sapphire sheet 310 is a layer of crystalline Al.sub.2O.sub.3 and can have one or more coatings applied to it that limit reflection and/or transmission of certain wavelengths of light. While embodiments of the disclosure are not limited to any particular thickness of sapphire sheet 310, in some embodiments the sapphire sheet is between 5 to 100 microns thick, while in other embodiments the sapphire sheet is between 10 to 80 microns thick and in further embodiments the sapphire sheet is between 20 to 70 microns thick.
(22)
(23) Ian step 410 an Al.sub.2O.sub.3 to SiO.sub.2 gradient layer 510 (see
(24) In some embodiments, gradient layer 510 can be an amorphous layer deposited, for example, to between 25 to 300 nanometers thick, while in other embodiments it can be between 50 to 200 nanometers thick and in further embodiments between 50 to 100 nanometers thick. In various embodiments in which it is desirable to minimize internal reflection within the composite cover glass, the thickness of gradient layer 510 can be selected to be above 50 microns. In various embodiments the thickness of gradient layer 510 can be selected to be above 100 microns to achieve a further reduction in internal reflection within the composite cover glass.
(25) In step 415 a first annealing treatment on sapphire sheet 505 with Al.sub.2O.sub.3 to SiO.sub.2 gradient layer 510 is performed. The first annealing treatment is performed at a temperature sufficient to chemically bond gradient layer 510 to sapphire sheet 505 can be above a temperature that glass sheet 530 (which is not subjected to the high temperature anneal) would melt. In some embodiments the first annealing treatment is performed in an inert or non-inert atmosphere at a final annealing temperature greater than 1000 C. In another embodiment the final annealing temperature of the first annealing treatment can be above 1200 C. In one embodiment the first annealing treatment temperature ramps to the final annealing temperature in four to six hours, is held at the final annealing temperature for approximately two hours, then ramps back to the ambient temperature over approximately 16 hours. In other embodiments different temperatures and ramp profiles can be used, including laser annealing, as described in more detail below.
(26) As shown in
(27) In step 420, which can be performed independent of steps 405 to 415, method 400 includes forming a glass sheet 530 using any appropriate manufacturing technique. In some embodiments glass sheet 530 is provided that is between 100 to 1000 microns thick, while in other embodiments the glass sheet is between 300 to 800 microns thick and in further embodiments the glass sheet is between 400 to 700 microns thick. In various embodiments glass sheet 530 is made from silicon dioxide and can be chemically strengthened and/or configured to block infra-red light.
(28) In step 425, glass sheet 530 is aligned with and placed on top of gradient layer 510, as illustrated in
(29) In step 430 a second annealing treatment is performed at a lower temperature than the first annealing treatment described in step 415. In some embodiments the second annealing treatment is performed in an ambient atmosphere and at a final annealing temperature of approximately 125 C. As shown in
(30)
(31) As shown in
(32) In step 610 a SiO.sub.2 to Al.sub.2O.sub.3 gradient layer 710 (see
(33) In some embodiments, gradient layer 710 can be an amorphous layer deposited, for example, to between 25 to 300 nanometers thick, while in other embodiments it can be between 50 to 200 nanometers thick and in further embodiments between 50 to 100 nanometers thick. In various embodiments in which it is desirable to minimize internal reflection within the composite cover glass, the thickness of gradient layer 710 can be selected to be above 50 microns. In some embodiments the thickness of gradient layer 710 can be selected to be above 100 microns to achieve a further reduction in internal reflection within the composite cover glass.
(34) In step 615 a sapphire sheet of Al.sub.2O.sub.3 is formed using any appropriate manufacturing technique. Referring to
(35) In step 620 sapphire sheet 715 is aligned with glass sheet 705 and placed in direct contact with gradient layer 710 (see
(36) In step 625 a first annealing treatment is performed on sapphire sheet 715 and gradient layer 710. In some embodiments the first annealing treatment is performed in an ambient atmosphere using a laser that is transmitted through sapphire sheet 715 and focused at or near interface 707 between the sapphire sheet and gradient layer 710 to heat the interface to a temperature that is sufficient to cause atomic level bonding between the sapphire sheet and the Al.sub.2O.sub.3-rich portion of the gradient layer without substantially softening glass sheet 705. In one embodiment the laser is configured to heat up the interface to a temperature of greater than 1000 C. while in other embodiments it can heat up the interface to a temperature of greater than 1200 C.
(37) As shown in
(38) In step 630 a second annealing treatment on the materials is performed at a lower temperature than the first annealing treatment performed in step 625. In some embodiments the second annealing treatment can be performed in an ambient atmosphere and at a final annealing temperature of approximately 125 C. In some embodiments the second annealing treatment can be performed in an oven or using a laser at a final annealing temperature that is below a softening point of glass sheet 705. In one example, the second annealing treatment performed in step 630 heats the interface between glass sheet 705 and gradient layer 710 to a temperature of approximately 125 C. As shown in
(39) In each of the methods 400 and 600 for bonding a sapphire sheet to a glass sheet described above, the composition profiles of Al.sub.2O.sub.3 and SiO.sub.2 within the gradient layer can change considerably from an as-deposited composition profile as initially formed to a final composition profile after the one or more annealing treatments, as described in more detail below.
(40)
(41) Final composition profile 800 illustrates sapphire sheet 310 on the right and glass sheet 320 on the left. Starting at sapphire sheet 310, the composition of the sapphire sheet is reasonably constant showing stable atomic percentages of oxygen and aluminum. Progressing towards first interface 370 (between sapphire sheet 310 and gradient layer 330), the atomic percentage of silicon starts to gradually increase due to the diffusion of silicon into the sapphire sheet from the gradient layer. Progressing through first interface 370 and into gradient layer 330 an aluminum-rich nano-crystalline Al.sub.2O.sub.3 layer 340 can include nano-crystals of Al.sub.2O.sub.3 that have been formed at the sapphire surface. In some embodiments the nano-crystals can have the same crystalline orientation as that of sapphire sheet 310, while in other embodiments they can have a different crystalline orientation. As shown in
(42) Moving further towards glass sheet 320, aluminum-rich nano-crystalline Al.sub.2O.sub.3 layer 340 can transition to a silicon-rich nano-crystalline and amorphous layer 350. More specifically, in some embodiments, at first interface 370, primarily nano-crystalline Al.sub.2O.sub.3 exists and moving towards glass sheet 320 the composition of gradient layer 330 transitions to amorphous Al.sub.2O.sub.3. In one example the composition of silicon-rich nano-crystalline and amorphous layer 350 can be a mixture of oxygen, silicon and aluminum and can be between 10 to 50 nanometers thick.
(43) Moving further towards glass sheet 320, in some embodiments silicon-rich nano-crystalline and amorphous layer 350 can transition to amorphous silicon dioxide such that it is predominantly silicon dioxide at the surface of glass sheet 320. In various embodiments, as silicon-rich nano-crystalline and amorphous layer 350 transitions to glass sheet 320, the percent composition of aluminum reduces and diminishes to near zero at second interface 380 (between glass sheet 320 and gradient layer 330). Moving further towards glass sheet 320 the composition is predominantly silicon and oxygen within glass sheet 320, with trace amounts of aluminum that have diffused into the glass sheet from gradient layer 330.
(44) The layer thicknesses and chemical compositions illustrated in
(45)
(46) As illustrated in
(47) In step 910 a first Al.sub.2O.sub.3 to SiO.sub.2 gradient layer 1010a (see
(48) In step 915 a first annealing treatment on sapphire sheet 1015 with first and second gradient layers 1010a, 1010b, respectively, is performed. The first annealing treatment is performed at a temperature sufficient to chemically bond first and second gradient layers 1010a, 1010b, respectively, to sapphire sheet 1015. In some embodiments the first annealing treatment is performed in an inert or non-inert atmosphere at a final annealing temperature greater than 1000 C. In another embodiment the final annealing temperature of the first annealing treatment can be above 1200 C. In one embodiment the first annealing treatment temperature ramps to the final annealing temperature in four to six hours, is held at the final annealing temperature for approximately two hours, then ramps back to the ambient temperature over approximately 16 hours. In other embodiments different temperatures and ramp profiles can be used including using laser annealing.
(49) As shown in
(50) In step 920, which can be performed independent of steps 905 to 915, method 400 includes forming a glass sheet 1030 using any appropriate manufacturing technique. In some embodiments a glass sheet 1030 is provided that is between 100 to 1000 microns thick, while in other embodiments the glass sheet is between 300 to 800 microns thick and in further embodiments the glass sheet is between 400 to 700 microns thick. In various embodiments glass sheet 1030 is made from silicon dioxide and can be chemically strengthened and/or configured to block infra-red light.
(51) In step 925, glass sheet 1030 is aligned with and placed on top of first gradient layer 1010a, as illustrated in
(52) In step 930 a second annealing treatment is performed at a lower temperature than the first annealing treatment described in step 915. In some embodiments the second annealing treatment is performed in an ambient atmosphere and at a final annealing temperature of approximately 125 C. As shown in
(53) As discussed above, the deposition first and second gradient layers 1010a, 1010b, respectively, on either side of sapphire sheet 1015 can reduce bowing of the sapphire sheet as compared to embodiments that have a gradient layer coated on only one side. Further, the reduced bowing can enable improved adhesion and lamination to glass sheet 1030 (see
(54) In embodiments where a reduced surface reelection is desired, second gradient layer 1010b can exhibit a surface reelection of approximately 4 percent or less as compared to sapphire sheet 1015 that exhibits a surface reflection of approximately 8 percent.
(55) In some embodiments where the improved scratch resistant properties of the sapphire sheet are desired on the outer surface of the electronic device, second gradient layer 1010b can be polished off after lamination to glass sheet 1030. In various embodiments a different type of coating can be applied on second side 1045 of sapphire sheet 1015 in place of second gradient layer 1010b. For example, in one embodiment a diamond like carbon coating can be applied on second side 1045. In some embodiments the different coating can offer improved scratch resistance (e.g., better than second gradient layer 1010b) and can also reduce bowing as described above. In various embodiments the different coating can be selected to have an appropriate coefficient of thermal expansion and/or modulus to counterbalance first gradient layer 1010a and can also offer improved scratch resistant properties over second gradient layer 1010b.
(56) Other variations and embodiments are within the scope of this disclosure. For example, in another embodiment a sapphire sheet can be bonded to either side of a glass sheet. That is, a first sapphire sheet can be bonded to a first side of a glass sheet and a second sapphire sheet can be bonded to a second side of glass sheet to balance stresses within the glass sheet.
(57) Although electronic device 100 (see
(58) For simplicity, various internal components, such as the control circuitry, graphics circuitry, bus, memory, storage device and other components of electronic device 100 (see
(59) In the foregoing specification, embodiments of the disclosure have been described with reference to numerous specific details that can vary from implementation to implementation. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense. The sole and exclusive indicator of the scope of the disclosure, and what is intended by the applicants to be the scope of the disclosure, is the literal and equivalent scope of the set of claims that issue from this application, in the specific form in which such claims issue, including any subsequent correction. The specific details of particular embodiments can be combined in any suitable manner without departing from the spirit and scope of embodiments of the disclosure.
(60) Additionally, spatially relative terms, such as bottom or top and the like can be used to describe an element and/or feature's relationship to another element(s) and/or feature(s) as, for example, illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and/or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as a bottom surface can then be oriented above other elements or features. The device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.