CHIP STRUCTURE
20200118910 ยท 2020-04-16
Assignee
Inventors
Cpc classification
H01L25/18
ELECTRICITY
G01S7/028
PHYSICS
H01L2924/00014
ELECTRICITY
H01L2224/14152
ELECTRICITY
H01L23/481
ELECTRICITY
H01L23/552
ELECTRICITY
H01L29/20
ELECTRICITY
H01L2223/6677
ELECTRICITY
H01L2225/06513
ELECTRICITY
H01L2924/00014
ELECTRICITY
G01S13/02
PHYSICS
International classification
H01L23/48
ELECTRICITY
G01S7/03
PHYSICS
G01S13/02
PHYSICS
H01L29/20
ELECTRICITY
Abstract
A chip structure, suitable to be used in radar applications includes, at least one gallium based first layer to perform RF applications; at least one gallium based second layer, placed on the first layer, to perform digital applications; at least two copper based pillars located between the first layer and the second layer, which provide electrical connection between the first layer and second layer and which ensure that there is a safe distance between the first layer and second layer.
Claims
1. A chip structure, suitable to be used in radar applications, comprising: at least one gallium based first layer to perform RF applications; at least one gallium based second layer, placed on the at least one gallium based first layer, to perform digital applications; a plurality of copper based pillars located between the at least one gallium based first layer and the at least one gallium based second layer, the plurality of copper based pillars provide an electrical connection between the at least one gallium based gallium based first layer and the at least one gallium based gallium based second layer and the plurality of copper based pillars provide a gap between the at least one gallium based first layer and the at least one gallium based second layer.
2. The chip structure according to claim 1, wherein, a length of the plurality of copper based pillars is between 30-50 um.
3. The chip structure according to claim 1, wherein, a length of the plurality of copper based pillars is 40 um.
4. The chip structure according to claim 1, wherein, a plurality of components of the at least one gallium based second layer face the at least one gallium based first layer.
5. The chip structure according to claim 1, wherein, the at least one gallium based first layer is in the form of a four channeled chip.
6. The chip structure according to claim 1, wherein, the at least one gallium based second layer is in the form of a four channel chip.
7. The chip structure according to claim 5, wherein, the at least one gallium based second layer is in the form of a four channeled channel chip.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIGURE shows a perspective view of the chip structure of the present application.
[0008] All the parts illustrated in the drawing are individually assigned a reference numeral and the corresponding terms of these numbers are listed as follows: [0009] First layer (1) [0010] Second layer (2) [0011] Pillar (3)
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0012] In the radar applications, digital and RF circuits are needed to be used together. In order to perform multi-channel digital and RF processes on a single chip, silicone based structures are commonly used. However, since RF performance of the silicone based structures are limited, overall performances of said single chip structures are limited. Therefore, with the present invention, a chip structure performing both digital and RF applications is provided.
[0013] A perspective view of the chip structure of the present invention is given in FIGURE. Said chip structure comprises at least one gallium based (such as gallium arsenideGaAs, gallium nitrideGaN etc.) first layer (1) to perform RF applications; at least one gallium based (such as gallium arsenideGaAs, gallium nitrideGaN etc.) second layer (2), placed on said first layer (1), to perform digital applications; at least two copper based pillars (3) located between the first layer (1) and the second layer (2), which provide electrical connection between the first layer (1) and second layer (2) and which ensure that there is a safe distance between the first layer (1) and second layer (2).
[0014] In an exemplary embodiment of the present invention, gallium arsenide based first layer (1) is connected to a control unit for sending/receiving signals/commands. Signals/commands received by the first layer (1) are sent to the second layer (2) through copper based pillars (3). Therefore, a safe electrical connection between the first layer (1) and second layer (2) is provided. Moreover, said pillars (3) ensure that there is a safe distance between the first layer (1) and second layer (2). In detail, during the design of the first layer (1), it is assumed that there is only air above the first layer (1). Therefore, in order to perform desired RF functions, parameters of the first layer (1) determined accordingly. However, when a second layer (2) is placed on top of the first layer (1), RF functions of the first layer (1) may be effected. In order to avoid such situation, there must be a safe distance between the first layer (1) and second layer (2). Since said pillars (3) ensures said safe distance, according to the present invention, RF performance of the first layer (1) is not effected by the second layer (2).
[0015] In a preferred embodiment of the present application, length of each said pillars (3) is between 30-50 um (preferably 40 um). Studies show that, when the distance between the first layer (1) and second layer (2) is kept higher than 50 um, RF performance of first layer (1) is minimally affected by second layer (2).
[0016] In another preferred embodiment of the present application, components of the second layer (2) face the first layer (1). Thanks to said structure, connection between the first layer (1) and second layer (2) is provided more easily and reliably.
[0017] In another preferred embodiment of the present application, first layer (1) is in the form of a four channeled chip. Similarly, second layer (2) is preferably in the form of a four channeled chip. Therefore, in this embodiment, chip structure has four channels. Thanks to the multilayer structure of the chip structure of the present application, four channel chip is provided with small size.
[0018] In the present application, the chip structure has plurality of layers for performing different applications (namely RF applications and digital applications). RF applications are performed with high performance in first layer (1) and digital applications are performed in second layer (2). Therefore, with the chip structure of the present application, both RF applications and digital applications are performed in a much smaller footprint.