Electronic device based on black phosphorous single channel with multi-function and method of manufacturing the same

Abstract

The present disclosure provides a multi-functional electronic device with a black phosphorous-based single channel, wherein the device comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.

Claims

1. A multi-functional electronic device with a black phosphorous-based single channel, wherein the device comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.

2. The multi-functional electronic device of claim 1, wherein a hole-carrier density of the first semiconductor region is adjusted with doping to be in a range of 10.sup.11 cm.sup.2 to 10.sup.13 cm.sup.2.

3. The multi-functional electronic device of claim 1, wherein the higher a hole-carrier density of the first semiconductor region, the higher a concentration of an ionic compound in the ionic gel layer.

4. The multi-functional electronic device of claim 1, wherein the ionic gel layer has a structure in which an ionic compound is disposed in a matrix formed by a polymer compound.

5. The multi-functional electronic device of claim 4, wherein the polymer compound is PMMA (polymethyl methacrylate), wherein the ionic compound contained in the ionic gel layer is [1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide (EMIM:TFSI)].

6. The multi-functional electronic device of claim 1, wherein the first semiconductor region acts as a P.sup.+ region, while the second semiconductor region acts as a P region, N region or N.sup.+ region depending on gating of the gate electrode.

7. The multi-functional electronic device of claim 6, wherein the device acts as a P.sup.+-P junction photodiode, wherein the first semiconductor region acts as a P.sup.+ region while the second semiconductor region acts as a P region; or wherein the device acts as a P.sup.+-N junction photodiode, wherein the first semiconductor region acts as a P.sup.+ region while the second semiconductor region acts as a N region.

8. The multi-functional electronic device of claim 6, wherein the device acts as a tunneling device exhibiting negative differential resistance (NDR) characteristic at a room temperature, wherein the first semiconductor region acts as a P.sup.+ region while the second semiconductor region acts as a N.sup.+ region.

9. A method for manufacturing a multi-functional electronic device with a black phosphorous-based single channel, wherein the electronic device includes a channel layer, two electrodes spaced apart from the channel layer, and a gate electrode for generating an electric field in the channel layer, wherein the method comprises forming the channel layer, wherein forming the channel layer includes: forming a black phosphorous layer; disposing a mask pattern on a first region of the black phosphorous layer; and applying a mixture containing an ionic compound on a second region of the black phosphorous layer not covered by the mask pattern, thereby to electrostatically-dope the ionic compound onto the second region of the black phosphorous layer.

10. The method of claim 9, wherein the electrostatically-doping is carried out such that the first region acts as a first semiconductor region while the second region acts as a second semiconductor region, wherein the second semiconductor region has a higher hole-carrier density than the first semiconductor region.

11. The method of claim 10, wherein the electrostatically-doping is carried out such that an ionic gel layer containing the ionic compound is formed on the second semiconductor region.

12. The method of claim 9, wherein the ionic compound is [1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide (EMIM:TFSI)], wherein the mixture further contains polymethyl methacrylate (PMMA), wherein the PMMA is mixed with the ionic compound to form the mixture.

13. The method of claim 9, wherein the electrostatically-doping is carried out to define an electrostatically-doped black phosphorous layer with a hole-carrier density in a range of 10.sup.11 cm.sup.2 to 10.sup.13 cm.sup.2.

14. The method of claim 9, wherein the electrostatically-doping includes: forming an electric double layer and a trap site by allowing the ionic compound in the mixture to be absorbed on a surface of the black phosphorous layer; and inducing charge accumulation in an interface between the mixture and the black phosphorous layer.

15. The method of claim 9, wherein the mask pattern is made of polymethyl methacrylate (PMMA).

16. The method of claim 9, wherein the electrostatically-doping is carried out such that as a concentration of the ionic compound in the mixture increases, a hole-carrier concentration on the second region increases.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings, which are incorporated in and form a part of this specification and in which like numerals depict like elements, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the disclosure.

(2) FIGS. 1A to 1H show a structure, and characteristic evaluation results of a black phosphorous-based electronic device according to one embodiment of the present disclosure.

(3) FIGS. 2A to 2D are illustrations of a structure and electrical characteristics of a black phosphorous-based electronic device according to one embodiment of the present disclosure.

(4) FIGS. 3A to 3C are illustrations of a structure and characteristics of a channel layer of a black phosphorous-based electronic device according to one embodiment of the present disclosure.

(5) FIGS. 4A to 4G are illustrations of optical characteristics of a black phosphorous-based electronic device according to one embodiment of the present disclosure.

(6) FIGS. 5A to 5C are illustrations of characteristics of a hetero-junction structure of a channel layer of a black phosphorous-based electronic device according to one embodiment of the present disclosure.

DETAILED DESCRIPTIONS

(7) Examples of various embodiments are illustrated and described further below. It will be understood that the description herein is not intended to limit the claims to the specific embodiments described. On the contrary, it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the present disclosure as defined by the appended claims.

(8) It will be understood that, although the terms first, second, third, and so on may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section, without departing from the spirit and scope of the present disclosure.

(9) The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular forms a and an are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms comprises, comprising, includes, and including when used in this specification, specify the presence of the stated features, integers, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and/or portions thereof. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items. Expression such as at least one of when preceding a list of elements may modify the entire list of elements and may not modify the individual elements of the list.

(10) Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

(11) In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. The present disclosure may be practiced without some or all of these specific details. In other instances, well-known process structures and/or processes have not been described in detail in order not to unnecessarily obscure the present disclosure.

(12) As used herein, the term substantially, about, and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art. Further, the use of may when describing embodiments of the present disclosure refers to one or more embodiments of the present disclosure.

(13) A black phosphorous-based electronic device according to the present disclosure comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.

(14) The first semiconductor region in the channel layer is a region having a first semiconductor characteristic by doping ionic liquid onto a two-dimensional black phosphorous layer in a first region thereof. For example, the first semiconductor region may be a P.sup.+ region. A hole-carrier density of the first semiconductor region may be in a range of from a degenerate doping level of 10.sup.13 cm.sup.2 to a non-degenerate doping level of 10.sup.11 cm.sup.2.

(15) The ionic gel layer disposed on the first semiconductor region of the channel layer may be made of a remaining ionic compound thereon after applying an ionic compound onto the first region to define the first semiconductor region. To form the first semiconductor region, ionic liquid may be used as the ionic compound for the doping effect on the black phosphorous layer. The ionic liquid may be a liquid formed by melting ionic crystals each composed of a bond between a cationic portion and an anionic portion. The ionic liquid acts as a surface charge transfer acceptor. The ionic gel layer may have a structure in which the ionic compound is disposed in a matrix formed by a polymer compound.

(16) Examples of the ionic liquid in accordance with the present disclosure may include: cationic EMIM(C.sub.6H.sub.11N.sub.2.sup.+): anionic TFSI(C.sub.2F.sub.6No.sub.4S.sub.2.sup.). That is, the ionic liquid may include [1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide (EMIM:TFSI)]. A variety of ionic liquids may be implemented depending on the types of cationic portion and anionic portion. The cationic portion may include, by way of example, EIMI, DEME [Diethylmethyl(2-methoxyethyl)ammonium], BMP [1-Butyl-1-methylpyrrolidinium], PP13 [N-Methyl-N-propylpiperidinium], etc. The anionic portion typically includes TFSI.

(17) An example of a polymer compound that constitutes the matrix of the ionic liquid may include polymethyl methacrylate (PMMA). When the ionic compound is applied on the BP layer, the concentration of the ionic compound may be determined by controlling the content ratio between the polymer compound and the ionic compound. Thus, depending on the concentration of the ionic compound, the hole-carrier concentration of the first semiconductor region formed may vary. As the hole-carrier concentration of the first semiconductor region increases, the ionic compound concentration in the ionic gel layer may increase. This may be because in the manufacturing process, the higher the concentration of the ionic compound-containing mixture, the higher the hole-carrier concentration of the first semiconductor region, resulting in the higher ionic compound concentration in the remaining ionic gel layer.

(18) The second semiconductor region may be an un-doped region. Unlike the first semiconductor characteristic of the first semiconductor region, the second semiconductor region has the second semiconductor characteristic, which is a characteristic of the black phosphorous layer itself. A mask layer may be placed on the second semiconductor region. The mask layer may be made of, for example, polymethyl methacrylate (PMMA).

(19) Using a single channel layer that includes the horizontal arrangement of the first semiconductor region and the second semiconductor region and thus includes a horizontal junction defined between them may allow implementing a uniform horizontal junction structure in the single channel. Thus, P.sup.+-P (M-S junction) (P.sup.+-P diode), P.sup.+-N (PN junction) (P.sup.+-N diode), P.sup.+-N.sup.+ (P.sup.+-N.sup.+ diode, NDR device) junction, etc. may be realized.

(20) The gate electrode is applied with the gate voltage. The gate electrode is insulated from the channel layer. The gate electrode may be disposed to generate an electric field in the channel layer when the gate voltage is applied to the gate electrode. The gate electrode is disposed on the bottom surface of the channel layer and is insulated from the channel layer via a gate insulating layer. Thereby, a bottom gate type may be formed. The gate electrode may be spaced apart from the first electrode and the second electrode. The gate electrode may be disposed to be insulated from the channel layer while overlapping at least partly with the channel layer. The structure of the black phosphorous-based electronic device may be implemented using a variety of known transistor or diode structures.

(21) FIGS. 1A to 1H illustrate the structure and characteristic evaluation results of the black phosphorous-based electronic device according to one embodiment of the present disclosure. FIGS. 1A and 1B are schematic views for illustrating doping onto the black phosphorous layer in the black phosphorous-based electronic device.

(22) Referring to FIGS. 1A and 1B, the ionic liquid constituting the ionic gel layer according to one embodiment may be made of a material having a low molecular weight and a high polarizability. When the material contacts another material, the material realizes an extensive charge induction effect. When the ionic liquid is dropped on the surface of the black phosphorous layer, the liquid is absorbed on the surface of the black phosphorous layer to generate an electric double layer and a trap site thereon. This leads to charge accumulation at the interface between them. This results in a P doping effect on the black phosphorous layer surface below the interface with the ionic liquid. The doping level on the black phosphorous layer may also be controlled via the concentration control of the ionic liquid. The concentration of the ionic liquid may be controlled by controlling the mixing ratio of the ionic liquid and PMMA (polymethyl methacrylate). The first semiconductor region may be doped using the ionic liquid so as to have the high hole-carrier density. In the resulting electronic device, the ionic liquid remains as the ionic gel layer.

(23) The black phosphorous-based electronic device having such a channel layer, according to the present disclosure may act as, a diode, in particular, an excellent optical device having strong optical response in a wide wavelength range from IR (infra-red) light to a visible light, which may be applied to various technical fields.

(24) Hereinafter, the electrostatically-doping of the ionic compound in an air-stable manner onto the black phosphorous layer is illustrated which may be controllable to generate a wide ranged charge density from the un-degenerate doping level to the degenerate doping level. Further, the characteristics of the manufactured channel layer will be described in more detail.

(25) Manufacturing Example: Two-dimensional BP Nano Thin Film Acquisition and Thickness Adjustment Thereof

(26) Physical thinning from bulk BP crystal was performed using Blue Nitto tape to obtain an atomic BP thin film. The peeled BP thin film or the peeled BP flake was transferred onto a 285 nm SiO.sub.2/p.sup.++ silicon wafer. Then, an ICP (inductive coupled plasma) treatment was performed on the obtained BP thin film for a thickness control and surface cleaning process. At this time, a condition for the ICP treatment were as follows: 30 mTorr pressure was maintained while Ar gas was injected, and 350 W RF power was applied at 13.56 MHz for high density plasma discharge.

(27) Manufacturing Example: Preparation of Ionic Liquids with Varying Concentrations

(28) EMIM: TFSI having various concentrations was prepared to control the doping effect. A mixture between EMIM: TFSI 12 mg and 495 PMMA A5 (trade name) 84, 36, 12, 4, and 0 mg led to the ionic liquid mixtures of EMIM: TFSI with weight percentages (concentrations) of 12.5%, 25%, 50%, 75% and 100%. Subsequently, doping was performed on the BP layer by directly dropping the ionic liquid mixture with the appropriate concentration onto the target BP channel location.

(29) Electrostatic Doping Using Ionic Liquid and Result-1 Thereof

(30) In order to realize a p.sup.+-p junction, a p.sup.+-n junction, and a p.sup.+-n.sup.+ junction for the two-dimensional black phosphorous thin film. As shown in FIG. 1C, the un-doped region was passivated with PMMA, while the ionic liquid with a concentration of 100% was dropped on the doped region. For PMMA passivation, PMMA was coated and then the PMMA was patterned using e-beam lithography. As a result, the BP region onto the ionic liquid was applied becomes a p.sup.+ state having a high hole-carrier density, while the un-doped BP region may turn into a p, n, or n.sup.+ state depending on back gating.

(31) OM (optical microscope) images, Raman spectra, Raman mapping images, Kelvin probe force microscopy (KPFM) mapping images, and XPS (X-ray photoelectron spectra) were obtained for the prepared BP channel. The results are shown in FIGS. 1D and 1H, respectively.

(32) FIG. 1D is an OM image of a BP channel; FIG. 1E is a Raman spectrum before and after the electrostatic doping of EMIM: TFSI; FIG. 1F is an A.sup.2.sub.g peak Raman mapping image of the BP channel; FIG. 1G is a KPFM mapping image of the BP channel; and FIG. 1H shows the result of XPS measurement of the BP channel before and after EMIM: TFSI electrostatic doping.

(33) Referring to FIG. 1D, a white dotted line in the OM image represents a boundary line between the un-doped region and the electrostatically-doped region of the BP channel. As may be seen from the above boundary, a uniform horizontal BP junction may be identified.

(34) Referring to FIG. 1E, the spectrum of the un-doped BP region shows a single peak at 366 cm.sup.1 (A.sup.1.sub.g) corresponding to vibration out of the plane, and two peaks at 433 cm.sup.1 and 471 cm.sup.1 (B.sup.2.sub.g and A.sup.2.sub.g) corresponding to vibrations in the plane. That is, in the doped BP region with 100% EMIM: TFSI, the hole-carrier density increases. Thus, the peaks of B.sup.2.sub.g and A.sup.2.sub.g shifted to the red peaks (difference 1.3 cm.sup.1). This shift is consistent with previous findings on Raman peak changes as observed in doped two-dimensional materials. To the contrary, the peak of A.sup.1.sub.g does not have any shift.

(35) FIG. 1F is a Raman-mapped image of an A.sup.2.sub.g peak center position (a portion represented by a white square in FIG. 1D) as collected from the electrostatically-doped BP sample. A color contrast between mapping images of the un-doped BP region and the electrostatically-doped BP region may clearly confirm that the uniform horizontal junction is formed in the two-dimensional BP thin film.

(36) Referring to FIG. 1G, it may be seen that the surface potential (s) mapping images as obtained from the doped and un-doped regions show clear contrasts. The value of s between the doped and un-doped regions was estimated to be 50 meV. Work functions of 4.28 eV and 4.33 eV were obtained for the un-doped BP and electrostatically-doped BP regions, respectively.

(37) Referring to FIG. 1H, we may identify 2p peaks of phosphorus (P). The P 2p peaks as obtained from the electrostatically-doped BP were shifted to lower values compared to the peaks as obtained from the un-doped BP. In particular, P 2p.sup.1/2 shifted from 130.3 eV to 130.1 eV. P 2p.sup.3/2 was shifted from 129.3 eV to 129.1 eV. The down shift of the XPS peaks was due to the electrostatic doping effect. In this connection, the Fermi level shifted toward the valence band edge due to the electrostatic doping effect. A similar result has been reported for graphene and TMDC.

(38) Although not shown in FIGS. 1A to 1H, the following were confirmed from SAED patterns from TEM images: the electrostatically-doped region has a high-quality monocrystalline structure with an orthorhombic crystal characteristic and little impurities. This may not be inconsistent with the characteristic of un-doped BP.

(39) Further, it has been confirmed from the high resolution TEM image (HRTEM) that the lattice constants as obtained from the doped region and the un-doped region are the same. This may serve as data proving that the electrostatic-doped BP region using the ionic liquid may maintain a unique crystal characteristic and thus the uniform horizontal BP junction may be formed.

(40) Preparation of FET Transistor Samples 1 to 6

(41) In order to confirm the electrostatic doping effect based on the varying concentrations of the ionic liquid, a black phosphorous thin film was transferred onto a 285 nm SiO.sub.2/p.sup.++ Si substrate using a physical thinning technique and then was subjected to an Ar plasma treatment. Then, an ionic liquid mixture with different concentrations (0%, 12.5%, 25%, 50%, 75%, and 100%) was applied onto the resulting BP film using a drop-cast technique at a room temperature as shown in FIG. 2A. In this connection, a 7 nm BP film was used as a channel. The ionic liquid mixture containing various concentrations (0%, 12.5%, 25%, 50%, 75%, and 100%) of EMIM: TFSI was electrostatically-doped on the resulting BP film to produce back-gating transistor samples 1 to 6. Then, each characteristic thereof was measured. In this connection, the concentration 0% represents the un-doped state. Between measurements, the BP-based device was cleaned using IPA (isopropyl alcohol) and then immersed in an acetone solution for 5 minutes. The results are shown in FIGS. 2B to 2D.

(42) FIG. 2B is a graph showing a current change when the gate voltage is applied to each of the FET transistor samples 1 to 6. FIG. 2C is a graph showing the change in threshold voltage based on the concentration of the ionic liquid mixture. FIG. 2D is a graph showing the change in carrier concentration based on the concentration of the ionic liquid mixture.

(43) Referring to FIG. 2B, it may be confirmed that the transfer curve obtained from an un-doped BP device corresponding to 0% concentration exhibits a p-type dominant transfer behavior with a minimum current value at 8 V. In contrast, in the case of the electrostatically-doped BP using the ionic liquid at 12.5% concentration, the minimum current position was shifted toward the positive value in excess of 50 V. This represents a significant p-type doping on the BP film. For the higher concentrations, namely, 25%, 50%, 75% and 100%, each transfer curve thereof exhibited a typical p-type behavior.

(44) Referring to FIG. 2C, it may be seen that the threshold voltage gradually increases from 5 V (concentration 0%) to 150 V (concentration 100%) as the concentration of the ionic liquid increases. In the case of a BP device electrostatically doped with an ionic liquid having a concentration of 100%, the current value in the BP channel was almost constant. This indicates a typical metallic characteristic. This indicates that controllable electrostatic doping from the un-degenerate level to the degenerate level (P.sup.+ doping) has been achieved

(45) Although not shown in FIGS. 2A to 2D, the hole-carrier concentration induced by the non-doped BP was measured to be 710.sup.10 cm.sup.2 from the transfer curve. As the concentration of the ionic liquid increases, the carrier concentration may gradually increase to 210.sup.13 cm.sup.2.

(46) Further, Hall measurements were performed using two opposing contacts placed perpendicular to the drain-source current path (see a schematic diagram inserted in the graph of FIG. 2D). The carrier density was calculated according to Equation 1 below, and the result thereof is shown in FIG. 2D.
n.sub.H=IB/eV.sub.H[Equation 1]

(47) (In Equation 1, n.sub.H: carrier concentration, B: vertical magnetic field, V.sub.H: horizontal voltage, I: current through BP channel)

(48) Referring to FIG. 2D, as the concentration of the ionic liquid increases from 0% to 100%, the hole-carrier concentration increases from 10.sup.11 cm.sup.2 to 10.sup.13 cm.sup.2. This indicates that the doping level on the BP may be easily controlled using electrostatic doping of the EMIM: TFSI. That is, the carrier concentration of BP may be widely controlled from 10.sup.11 cm.sup.2 (a non-degenerate doping level) to 10.sup.13 cm.sup.2 (a degenerate doping level).

(49) This result enabled calculation of the Fermi level position E.sub.F in the BP layer with different doping levels. E.sub.F was calculated using the hole-carrier band effective mass of 0.2 m.sub.e (m.sub.e : electron mass in free space). For non-doped BP, the E.sub.F was 1 meV. E.sub.F increased gradually with increasing concentration of the EMIM: TFSI and eventually reached 250 meV for electrostatic doping of 100% concentration of the EMIM: TFSI.

(50) Preparation of BP Junction Device

(51) A partially doped BP junction device was prepared using the ionic liquid mixture (i.e., p.sup.+ type) at a 100% concentration using substantially the same method as that as described in FIG. 1C.

(52) Evaluation of Electrical Characteristic of BP Junction Device

(53) For the partially doped BP junction device as prepared above, the I-V characteristic was measured by applying a drain voltage V.sub.D to the P.sup.+ doped region. Further, the I.sub.D-V.sub.D characteristic was measured and the I.sub.f/I.sub.r ratio (ratio of forward current to reverse current) was measured based on V.sub.g. The result is shown in FIGS. 3A to 3C.

(54) FIGS. 3A to 3C illustrate a structure and characteristics of a channel layer of the black phosphorous-based electronic device according to one embodiment of the present disclosure.

(55) FIG. 3A is a schematic diagram of a structure and an energy band at an equilibrium state of BP based p.sup.+-p, and p.sup.+-n junction FETs (electric field effect transistors); FIG. 3B shows an I.sub.D-V.sub.D characteristic graph at 0<V.sub.g<30 V for a 7 nm BP FET; FIG. 3C is a graph showing an I.sub.f/I.sub.r ratio based on V.sub.g.

(56) Referring to FIGS. 3A and 3B, when V.sub.D>0, the hole-carrier moves from the P.sup.+ region to the un-doped region. The diode operation when the electrical characteristic of the non-doped BP region changes based on V.sub.g is shown in FIG. 3 (b).

(57) It was confirmed referring to FIG. 3C that as V.sub.g increases from 0 to 30 V, the forward current (I.sub.f) and the reverse current (I.sub.r) are all reduced due to the built-in potential (BIP) difference. Significant reduction in the reverse current results from stronger internal potential that limits the reverse current. As the back gate voltage varied from 0V to 30V, the obtained I.sub.f/I.sub.r ratio increased from 3.66 to 33. An ideal factor of 1.16 was obtained. This shows a slight carrier recombination in a uniform horizontal junction BP diode. This controllable result via the gating suggests applicability of the present BP device to optical devices.

(58) Optical Characteristic Evaluation

(59) Photocurrent was measured after irradiating light to the two junction devices (P.sup.+-P junction device at V.sub.g=0V and P.sup.+-N junction device at V.sub.g=30V). The measured values were compared to those obtained from the non-doped BP channel devices (no junction). In this experiment, light of 655 nm and 1064 nm wavelength was used. The result is shown in FIGS. 4A to 4G.

(60) FIG. 4A to 4G illustrate optical characteristics of the black phosphorous-based electronic device according to one embodiment of the present disclosure.

(61) FIG. 4A is an I.sub.photo-V.sub.D characteristic graph of partially doped BP and non-doped BP at V.sub.g=0 V using a 655 nm wavelength laser; FIG. 4B is an I.sub.photo-V.sub.D characteristic graph of partially doped BP and un-doped BP at V.sub.g=30 V using a 655 nm wavelength laser.

(62) Referring to FIGS. 4A and 4B, photocurrent for the junction device was much higher than that obtained from the non-doped BP FET for red light irradiation thereto at a power of 62.5 mW/cm.sup.2. For the junction device, the photocurrents for the two devices were respectively 10 A and 4 A at the gate voltages of 0V and 30V. The measured values were 10 times higher than those obtained from the non-doped channel.

(63) This photocurrent may be enhanced by effectively removing and promoting the photo-generation from e-h (electron-hole) pairs. Although the internal potential of the P.sup.+-N junction is stronger than the internal potential of the P.sup.+-P junction, the photocurrent for the P.sup.+-N junction was slightly smaller than that for the P.sup.+-P junction since the carrier concentration of the P.sup.+-P junction is much larger than that of the P.sup.+-N junction.

(64) It may be confirmed from each of FIGS. 4A and 4B that for P.sup.+-P junction and P.sup.+-N junction (red line), a significant photocurrent enhancement may be achieved compared to the photocurrent as measured for the non-doped channel as the non-dope BP (black line).

(65) FIG. 4C is a V.sub.oc and I.sub.sc characteristic graph based on the laser power density for the P.sup.+-N junction device. It was confirmed referring to this graph that open-circuit voltage (V.sub.oc) and short-circuit current (I.sub.sc) increased with laser power density increase under irradiation of a red laser. It is noted that the open-circuit voltage (V.sub.oc) and short-circuit current (I.sub.sc) were 0.15 V and 30 nA, respectively for the P.sup.+-N junction at a power of 62.5 mW/cm.sup.2. Although not shown in the figure, the open-circuit voltage (V.sub.oc) and short-circuit current (I.sub.sc) were 0.1 V and 80 nA for P.sup.+-P junction, respectively. This tendency was not observed in the non-doped BP channel due to the absence of internal potential.

(66) FIG. 4D and FIG. 4E show graphs of respectively photocurrent characteristics verse time for partial doped BP and un-doped BP at V.sub.D=0.1 V and V.sub.g=0 V and 65 V respectively at 655 nm wavelength laser. It could be confirmed referring to these graphs that the rise time (0.03 s) and the fall time (0.05 s) as observed for the horizontal BP junction devices were faster respectively by 1 order of magnitude than the rise and fall times (0.2 s and 0.15 s) as measured for the non-doped BP devices. This significant improvement in the response time is due to the higher carrier density and the internal potential created inside the junction devices.

(67) FIG. 4F and FIG. 4G show graphs of respectively I.sub.photo-V.sub.D characteristic for partial doped BP and un-doped BP at V.sub.g=0 V and 30 V respectively at 1065 nm wavelength laser. It could be confirmed referring to these graphs that the optical response in the IR band region is also improved as in in FIGS. 4 (b) and (c).

(68) Consideration on Evaluation Result of Optical Characteristic

(69) The results shown in FIGS. 4A to 4G above suggest that the output characteristic of the present BP device under light irradiation conditions is useful for wide band optical applications, particularly, IR photoelectric applications. In this connection, 2D semiconductor material (for example, TMDC material) is known to be useful for IR photoelectric devices. The photocurrent values as measured under IR irradiation suggests that the P.sup.+-P junction and the P.sup.+-N junction are more advantageous than the non-doped BP channel. Photocurrents of 3.2 A and 2.5 A could be achieved for V.sub.D=0.5 V for the P.sup.+-P junction and the P.sup.+-N junction, which was observed in the case of red light illumination.

(70) In this connection, calculating external quantum efficiency (EQE) and optical responsiveness (R) may allow the optical performance of the P.sup.+-P junction and the P.sup.+-N junction in BP to be numerically evaluated. An EQE value of 24000% was obtained at V.sub.D=1 V and V.sub.G=+30V (for the P.sup.+-N junction). R is substantially three times the value as obtained for the non-doped BP-based optical transistor. R was 120 A/W which is much higher than the value as measured from recently reported BP P-N junctions.

(71) Previous papers on photo-resistors have reported that a very high EQE or R is obtained at high V.sub.G and V.sub.D, resulting in the generation of additional thermionic charges that promote generation of carriers via light. The internal potential of the P.sup.+-P junction and P.sup.+-N junction according to the present disclosure may provide exceptional advantages that it enables isolation and collection of optical carriers even at low V.sub.D and zero V.sub.G. This may be suitable for low power light sensing applications.

(72) Further, filling factor (FF) and light conversion efficiency () were respectively estimated to be 0.2 and 4.8% for the P.sup.+-P junction. The filling factor (FF) and light conversion efficiency () were estimated to be 0.4 and 5.4% for the P.sup.+-N junction, respectively. The related experimental results suggest that the effect of the present disclosure is to improve the responsiveness and response rate of the optical device, and/or that the effect of this disclosure is that the operation of the low power optical device may be implemented using the partial doping onto a single channel BP.

(73) Characteristic Evaluation of P.sup.+-N.sup.+ Junction Structure

(74) A device having a P.sup.+-N.sup.+ junction structure was prepared in which the BP single channel is divided into a P.sup.+ region defined via electrostatic doping using the ionic liquid together with applying a high and positive gate voltage, and a N.sup.+ region defined via gating. For the device with P.sup.+-N.sup.+ junction structure, the I.sub.D-V.sub.D curve was obtained to evaluate the negative differential resistance (NDR) transfer behavior characteristic.

(75) FIGS. 5A to 5C illustrate characteristics of a heterojunction structure of a channel layer of a black phosphorous-based electronic device according to one embodiment of the present disclosure.

(76) FIG. 5A shows on the device with P.sup.+-N.sup.+ junction structure and the energy band diagram thereof based on V.sub.D; FIG. 5B shows an I.sub.D-V.sub.D characteristic graph when V.sub.g=80 V (red graph) and V.sub.g=100 V (black graph); FIG. 5C shows an I.sub.D-V.sub.g characteristic graph of the BP junction FET before and after electrostatic doping.

(77) Referring to FIGS. 5A to 5C, for I of FIG. 5A, under a low forward bias (0<V.sub.D<0.8 V) condition, electrons may move from an n.sup.+ region through a common energy window (E.sub.FN.sup.+-E.sub.FP.sup.+) to an empty energy level of the p.sup.+ region via tunneling through a barrier. The tunneling current increased mainly because the available joint DOS (density of states) for conduction increased with the increase of the bias voltage (IDOS.sub.P, DOS.sub.N). The peak current was obtained when the joint DOS is at its maximum.

(78) Referring to FIGS. 5A to 5C, for II of FIG. 5A, when the forward bias voltage is further increased (0.8V<V.sub.D<1.5V), the common energies (i.e., joint DOS) for both bands are reduced, which results in a reduction of the tunneling current. As the entire DOS approaches zero, the junction current has reached its minimum value. At V.sub.D=1.5V, the bottom of the n.sup.+ region conduction band is positioned above the p.sup.+ region balance band. Thus, at this voltage, there is no available DOS for conduction, so that tunneling is not allowed and no current flows.

(79) Further, referring to FIGS. 5A to 5C, for III of FIG. 5A, as the V.sub.D is further increased (V.sub.D>1.5V), the common diffusion current and thermionic emission current increase with V.sub.D increase as the energy barrier between the conduction bands of the p.sup.+ region and n.sup.+ region decreases. Thus, the current increased in the horizontal BP P.sup.+-N.sup.+ junction as the V.sub.D increased.

(80) As shown in FIG. 5B, the NDR characteristic of the BP horizontal P.sup.+-N.sup.+ junction was observed to start at V.sub.G=+80V. The NDR characteristic was clearly observed from the output characteristic measured at V.sup.G=+100V. Significant hysteretic behavior was not observed from the forward sweep (0->2V) and the reverse sweep (2->0V). This is the first proof of NDR transfer induced by tunneling in the single BP channel. The ratio of peak to valley thus obtained was about 2 at room temperature. This value is higher than the value obtained from 2D heterojunction structures such as BP/SnSe.sub.2, MoS.sub.2/WSe.sub.2, and the like.

(81) As shown in FIG. 5C, the I.sub.D-V.sub.G characteristic of the uniform horizontal BP junction field effect transistor has been studied and compared with the non-doped BP channel device. Although the doped and un-doped field effect transistors all exhibit a hole-carrier-dominant transfer characteristic (a high I.sub.D at a negative value of V.sub.G), the convex peak, that is, the local maximum of the current appears for the BP junction electric field effect transistor (red curve) at a positive V.sub.G (50V<V.sub.G<95V) (the current first increases and then decreases as V.sub.G increases). This proves negative trans-conductance characteristics (NTC) (dI.sub.D/dV.sub.G<0). This NTC was observed even at room temperature. The observed NTC may be understood from the coupling effect selected from the diffusion current between the BP and the metal contact, the barrier formation in the junction, and the Schottky barrier (.sub.sc).

(82) Although not shown in the figure, at a V.sub.G lower than 30V (P.sup.+-P junction), a typical hole-carrier-dominant I.sub.D curve was observed from the energy band diagram illustrating the NTC behavior in the I.sub.D-V.sub.G curve at a positive V.sub.G value. This may confirm that I.sub.D decreases as V.sub.G increases. After reaching the minimum value at V.sub.G=30V, the current increased as the gate voltage increased. We understand that the minimum current rises when the Fermi energy of the metal contact matches the middle level of the bandgap of the n-type BP. The Schottky barrier was highest at this point and the contact resistance was at its maximum at this point. As for V.sub.G values between 30V and 75V (the junction acts as basically a p.sup.+-n diode), as VG increases, the Schottky barrier between the semiconductor BP and the metal contact decreases, and the main current moves from the n.sup. doped BP region to the p.sup.+ BP region. Thus, The I.sub.D increases with the increase of the gate voltage. At V.sub.G=70V, the I.sub.D reached the peak value, and then the current again decreased with the decrease of the gate voltage. For V.sub.G values in excess of 70V, the down turn of the I.sub.D occurs in the boundary region between P.sup.+ and N.sup.+ regions, and results from an improved barrier that suppresses the entire I.sub.D. The barrier is proportional to the internal potential in the interface. The horizontal BP junction devices represent both NDR and NTC characteristics, which is crucial for further study of new types of 2D functional devices.

(83) It has been confirm from the above that the ionic liquid together with adjustment of the concentration thereof may be used to change the hole-carrier carrier density from 10.sup.11 cm.sup.2 (un-degenerate level) to 10.sup.13 cm.sup.2 (degenerate level). Such an electrostatic doping method may be applied to manufacture a uniform multifunctional horizontal junction diode. It has been confirmed that electrostatic-doping of a portion of the BP sample and applying the gate voltage to the rest of the BP sample may allow uniform horizontal P.sup.+-P, P.sup.+-N and P.sup.+-N.sup.+ junction diodes to be fabricated in the single BP and thus allow an electrically adjustable p-n junction to be produced.

(84) Further, the channel layer thus manufactured is not deteriorated even under the oxygen exposure condition, and is stably maintained, so that the stability of the device may be ensured.

(85) The uniform horizontal P.sup.+-P and P.sup.+-N junctions exhibited ideal rectification behavior and stronger optical response due to their internal potential. These characteristics may be adjusted by adjusting the gate voltage. Open-circuit voltage and short-circuit current measurements have shown that horizontal BP p.sup.+-n diodes may be applied to solar cells.

(86) Additionally, at high positive gate voltages, the diode acted as a p.sup.+-n.sup.+ diode. In this case, inter-band tunneling enabled the uniform horizontal p.sup.+-n.sup.+ junction providing NDR and NTC at a room temperature in terms of current-voltage characteristics. Further, the peak to valley ratio as obtained from the NDR characteristic I.sub.D-V.sub.D curve reached about 2 at room temperature.

(87) In other words, it is possible to manufacture multifunctional horizontal BP junctions (P.sup.+-P and P.sup.+-N and P.sup.+-N.sup.+ junctions) based on the single BP electric field effect transistor as prepared via partially electrostatic doping. The observation of the NDR and NTC characteristics from the BP P.sup.+-N.sup.+ junction-based electric field effect transistor may indicate that novel opportunities of BP-based devices for future low power high speed electromagnetic device applications may be discovered.

(88) It is to be understood that while the present disclosure has been particularly shown and described with reference to the exemplary embodiments thereof, the disclosure is not limited to the disclosed exemplary embodiments. On the contrary, it will be understood by those skilled in the art that various modifications may be made without departing from the spirit and scope of the present disclosure.

(89) It is understood by those skilled in the art that various variants and alternatives may be selected in the present disclosure without departing from the spirit or scope of the present disclosure. Accordingly, it is intended that the present disclosure covers the modifications and variations when they come within the scope of the appended claims and their equivalents.

(90) In the present specification, a reference has been made to all the device and method disclosures. In this connection, the descriptions of the device and method disclosures may be applied to each other in a supplementing manner.

(91) The above description is not to be taken in a limiting sense, but is made merely for the purpose of describing the general principles of exemplary embodiments, and many additional embodiments of this disclosure are possible. It is understood that no limitation of the scope of the disclosure is thereby intended. The scope of the disclosure should be determined with reference to the Claims. Reference throughout this specification to one embodiment, an embodiment, or similar language means that a particular feature, structure, or characteristic that is described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, appearances of the phrases in one embodiment, in an embodiment, and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment.