METHOD OF MANUFACTURING SUBSTRATE STRUCTURE WITH FILLING MATERIAL FORMED IN CONCAVE PORTION
20200091059 ยท 2020-03-19
Inventors
- Chang-Fu Lin (Taichung City, TW)
- Chin-Tsai Yao (Taichung City, TW)
- Chun-Tang Lin (Taichung City, TW)
- Fu-Tang Huang (Taichung City, TW)
Cpc classification
H01L2224/73204
ELECTRICITY
H01L2224/0401
ELECTRICITY
H01L21/4853
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/81007
ELECTRICITY
H01L2224/131
ELECTRICITY
H01L2224/16238
ELECTRICITY
H01L2224/81191
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/05567
ELECTRICITY
H01L2224/16148
ELECTRICITY
H01L21/563
ELECTRICITY
H01L2224/131
ELECTRICITY
H01L23/3185
ELECTRICITY
H01L2224/13022
ELECTRICITY
H01L23/49811
ELECTRICITY
H01L2224/16227
ELECTRICITY
H01L2224/16147
ELECTRICITY
H01L2224/81192
ELECTRICITY
International classification
H01L23/498
ELECTRICITY
Abstract
Provided is a substrate structure including a substrate body, electrical contact pads and an insulating protection layer disposed on the substrate body, wherein the insulating protection layer has openings exposing the electrical contact pads, and at least one of the electrical contact pads has at least a concave portion filled with a filling material to prevent solder material from permeating along surfaces of the insulating protection layer and the electric contact pads, thereby eliminating the phenomenon of solder extrusion. Thus, bridging in the substrate structure can be eliminated even when the bump pitch between two adjacent electrical contact pads is small. As a result, short circuits can be prevented, and production yield can be increased.
Claims
1-13. (canceled)
14: A method for manufacturing a substrate structure, comprising: providing a substrate body including a plurality of electrical contact pads; forming an insulating protection layer on the substrate body and the electrical contact pads, wherein the insulating protection layer includes a plurality of openings exposing the electrical contact pads; forming at least one hole on the insulating protection layer, the hole extending into at least one of the electrical contact pads to form at least one concave portion on the electrical contact pad; and forming a filling material in the concave portion.
15: The method of claim 14, wherein the filling material is further formed in the concave portion.
16: A method for manufacturing a substrate structure, comprising: providing a substrate body including a plurality of electrical contact pads, wherein at least one of the electrical contact pads includes at least one concave portion; and forming an insulating protection layer on the substrate body, and forming a filling material in the concave portion, wherein the insulating protection layer includes a plurality of openings exposing the electrical contact pads.
17: The method of claim 16, wherein the concave portion is formed to penetrate the electrical contact pad.
18: The method of claim 16, wherein the concave portion is formed free from penetrating the electrical contact pad.
19: The method of claim 16, further comprising forming a plurality of conductive elements on the electrical contact pads exposed from the openings to bond an electronic element.
20: The method of claim 16, wherein the concave portion is formed at a corner of the substrate body.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The present disclosure can be more fully understood by reading the following detailed description of the preferred embodiments, with reference made to the accompanying drawings, wherein:
[0024]
[0025]
[0026]
[0027]
[0028]
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0029] The present disclosure is described by the following specific embodiments. Those with ordinary skills in the arts can readily understand other advantages and functions of the present disclosure after reading the disclosure of this specification. The present disclosure may also be practiced or applied with other different implementations. Based on different contexts and applications, the various details in this specification can be modified and changed without departing from the spirit of the present disclosure.
[0030] It should be noted that the structures, ratios, sizes shown in the drawings appended to this specification are to be construed in conjunction with the disclosure of this specification in order to facilitate understanding of those skilled in the art. They are not meant, in any ways, to limit the implementations of the present disclosure, and therefore have no substantial technical meaning. Without affecting the effects created and objectives achieved by the present disclosure, any modifications, changes or adjustments to the structures, ratio relationships or sizes, are to be construed as fall within the range covered by the technical contents disclosed herein. Meanwhile, terms, such as up, down, bottom, first, second, a and the like, are for illustrative purposes only, and are not meant to limit the range implementable by the present disclosure. Any changes or adjustments made to their relative relationships, without modifying the substantial technical contents, are also to be construed as within the range implementable by the present disclosure.
[0031]
[0032] As shown in
[0033] In this embodiment, the substrate body 20 is a circuit structure. For example, the substrate body 20 can be a circuit board having a plurality of dielectric layers and a plurality of circuit layers, and the electrical contact pads 21 are electrically connected with conductive traces 200. The electrical contact pads 21 and the conductive traces 200 form the outermost circuit layer, which is disposed on top of the outermost dielectric layer and electrically connected with other circuit layers. The material used for forming the dielectric layers can be prepreg materials.
[0034] Furthermore, in another embodiment, the substrate body may include a base and a circuit structure disposed on the base, and electrical contact pads 21 and conductive traces 200 are disposed on the circuit structure. The base can, for example, be a semiconductor substrate, such as a wafer, a chip, an interposer with Through-Silicon Vias (TSVs). The circuit structure includes a plurality of dielectric layers and a plurality of redistribution layers (RDLs), wherein the electrical contact pads 21 and the conductive traces 200 are provided on the outermost dielectric layer and electrically connected with other circuit redistribution layers. Alternatively, the electrical contact pads 21 and the conductive traces 200 are part of a circuit redistribution layer.
[0035] Moreover, the insulating protection layer 22 includes a plurality of openings 220 for exposing the corresponding electrical contact pads 21. More specifically, the material for the insulating protection layer 22 can be a solder resistant material or a dielectric material, wherein the dielectric material can, for example, be polyimide (PI), benezocy-clobutene (BCB) or polybenzoxazole (PBO).
[0036] As shown in
[0037] In this embodiment, the hole 221 and the concave portion 210 are in communication with each other. For example, a hole 221 and a concave portion 210 are formed by laser simultaneously, such that the shape of the hole 221 matches that of the concave portion 210. It can be understood that the holes 221 and the concave portions 210 can be formed by etching.
[0038] In addition, the concave portion 210 penetrates the electrical contact pad 21, such that the surface of the substrate body 20 is exposed from the concave portion 210. Alternatively, a concave portion 210 does not penetrate the electrical contact pad 21, as shown in
[0039] Moreover, the concave portions 210 and 210 are at the edge of the electrical contact pads 21, and the planar shape of the electrical contact pads 21 viewed from the top can be various geometric shapes. For example, as shown in
[0040] In addition, the width of the hole 221 (or the width of the concave portion 210 or 210) may be 5 to 25 m, as shown in
[0041] As shown in
[0042] In this embodiment, the filling materials 23 are made of the same or different material as the insulating protection layer 22, that is, any material can be used as the filling materials 23 as long as they blocks the flow of the soldering material, such as a metal material or an insulating material; the present disclosure is not limited as such.
[0043] Moreover, a substrate structure 2 shown in
[0044]
[0045] As shown in
[0046] In this embodiment, the electronic element 30 is an interposer with TSVs, a circuit board, an active component, a passive component or a combination thereof, wherein the active component can be, for example, a semiconductor chip or a wafer, and the passive component can be, for example, a resistor, a capacitor or an inductor. As an example, the electronic element 30 is an active component, which includes an active surface 30a and a non-active surface 30b opposite to each other. The active surface 30a includes a plurality of electrode pads 300, so that the electronic element 30 is bonded to the conductive elements 24 through corresponding electrode pads 300.
[0047] Moreover, the conductive elements 24 can be solder bumps, copper bumps coated with soldering materials or any other bumps containing solder materials.
[0048] As shown in
[0049] In this embodiment, the filling materials 33 and the encapsulating layer 31 are integrally formed. For example, the filling materials 33 and the encapsulating layer 31 are formed by the same filling process or molding process, so the material of the filling materials 33 and the material of the encapsulating layer 31 are the same. For example, they are both formed of underfill or molding compound (e.g., epoxy resin).
[0050]
[0051] As shown in
[0052] In this embodiment, concave portions 410 are formed in the electrical contact pads 21 by etching or laser process. It can be understood that electrical contact pads 21 with concave portions 410 can be formed directly by electroplating or coating. Moreover, the concave portions 410 can be chosen to penetrate or not penetrate the electrical contact pads 21.
[0053] As shown in
[0054] In this embodiment, the insulating protection layer 22 has a plurality of openings 220 for exposing corresponding electrical contact pads 21.
[0055] Moreover, the filling materials 43 and the insulating protection layer 22 are formed integrally. For example, the filling materials 43 and the insulating protection layer 22 are formed by the same coating process, so the materials of the filling materials 43 and the insulating protection layer 22 are the same. For example, they are both made of a dielectric material or a solder resistant material. Alternatively, the filling materials 43 and the insulating protection layer 22 can be made of the same material but separately. It can be understood that the filling materials 43 and the insulating protection layer 22 can also be made of different materials and made separately.
[0056] In the substrate structures 2, 2, 3 and 4 of the present disclosure, concave portions 210, 210 and 410 are formed on the electrical contact pads 21, such that filling materials 23, 33 and 43 are formed in the concave portions 210, 210 and 410, so in the subsequent heating process, the flow of the soldering materials of the conductive elements 24 are blocked by the filling materials 23, 33 and 43, preventing the soldering materials of the conductive elements 24 from permeating along the interfaces of the insulating protection layer 22 and the electrical contact pads 21. Thus, bridging in the substrate structures 2, 2, 3 and 4 can be eliminated even when the bump pitch between two adjacent electrical contact pads 21 is small, avoiding short circuits. Thus, compared to the prior art, the substrate structures 2, 2, 3 and 4 of the present disclosure are in line with the developments towards more compact, lighter, more versatile, higher speed and higher frequency semiconductor chips, and production yield can be increased.
[0057] Moreover, since the substrate structures 2, 2, 3 and 4 of the present disclosure do not require forming a solder material blocking layer (metal layer) on the electrical contact pads 21 as described in the prior art, the manufacturing cost of the substrate structures 2, 2, 3 and 4 can thus be effectively controlled, and is cost effective.
[0058] In addition, in the substrate structures 2, 2, 3 and 4 of the present disclosure, the concave portions 210 can be formed on all of the electrical contact pads 21. However, it can be understood that the concave portions 210 can be formed only where the bump pitch is smaller or stress is higher (e.g., at the four corners of the substrate body 20), as shown in
[0059] The present disclosure further provides a substrate structure 2, 2, 3 or 4, including a substrate body 20, a plurality of electrical contact pads 21, a filling material 23, 33 or 43, and an insulating protection layer 22 formed on the substrate body 20 and the filling material 23, 33 or 43.
[0060] The electrical contact pads 21 are formed on the substrate body 20, wherein at least one electrical contact pad 21 includes at least one concave portion 210, 210 or 410.
[0061] The filling material 23, 33 or 43 is formed in the concave portion 210, 210 or 410.
[0062] The insulating protection layer 22 includes a plurality of openings 220 for exposing corresponding electrical contact pads 21.
[0063] In one embodiment, the insulating protection layer 22 further includes holes 221 in communication with the concave portion 210 or 210, and the filling materials 23 or 33 are formed in the holes 221.
[0064] In one embodiment, the material of the filling material 23 or 33 is different from that of the insulating protection layer 22.
[0065] In one embodiment, the material of the filling material 23 or 43 is the same as that of the insulating protection layer 22.
[0066] In one embodiment, the filling material 43 is integrally formed with the insulating protection layer 22.
[0067] In one embodiment, the substrate structure 3 further includes a plurality of conductive elements 24 disposed on the electrical contact pads 21 of the openings 220 for combining with an electronic element 30.
[0068] In one embodiment, the material of the filling material 33 can be made integrally with and of the same material as an encapsulating layer 31 formed between the electronic element 30 and the insulating protection layer 22.
[0069] In one embodiment, the material of the filling material 23, 33 or 43 can be a metal material or an insulating material, and the insulating material can be an underfill, a molding compound, a solder resistant material, polybenzoxazole (PBO), polyimide (PI), or benezocy-clobutene (BCB).
[0070] In summary, the substrate structure and the manufacturing for the substrate structure of the present disclosure avoids the phenomenon of solder extrusion through the use of the concave portions and the filling materials. As a result, the substrate structure of the present disclosure has the development potential of being compact, multi-functional and with high speed and high frequency, and production yield can be increased while the manufacturing cost of the substrate structure can be effected controlled.
[0071] The above embodiments are only used to illustrate the principles of the present disclosure, and should not be construed as to limit the present disclosure in any way. The above embodiments can be modified by those with ordinary skill in the art without departing from the scope of the present disclosure as defined in the following appended claims.