Encapsulation film

Abstract

The present application relates to an encapsulation film, a method of manufacturing the same, an organic electronic device including the same, and a method of manufacturing the organic electronic device using the same. The present application provides an encapsulation film which can be formed to have a structure in which moisture or oxygen flowing from the outside into an organic electronic device can be effectively blocked, has excellent handling properties and processability, and also has excellent bonding properties with an organic electronic element and durability.

Claims

1. An encapsulation film for an organic electronic element, comprising: a metal layer having a first surface and a second surface opposite to the first surface; and an encapsulation layer provided on the first surface, positioned inside an edge of the first surface so that a gap having a size of 20 m to 1,000 m is formed between an edge of the encapsulation layer and the edge of the first surface, and having an inclined part at the edge of the encapsulation layer.

2. The encapsulation film according to claim 1, wherein the inclined part has a width (d) ranging from 2 m to 1,000 m.

3. The encapsulation film according to claim 1, wherein the encapsulation layer has a Mooney viscosity (*) ranging from 2.010 Pa.Math.s to 10.sup.8 Pa.Math.s, which is measured according to shear stress under conditions of 5% strain, a frequency of 1 Hz and a temperature of 100 C.

4. The encapsulation film according to claim 1, wherein the encapsulation layer has a cured part at the edge thereof.

5. The encapsulation film according to claim 4, wherein the cured part has a width ranging from 10 m to 1,100 m.

6. The encapsulation film according to claim 1, wherein the metal layer comprises any one of a metal, a metal oxide, a metal nitride, a metal carbide, a metal oxynitride, a metal oxyboride, and a mixture thereof.

7. The encapsulation film according to claim 1, wherein the metal layer comprises any one of iron, aluminum, copper, nickel, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, and a mixture thereof.

8. The encapsulation film according to claim 1, further comprising a protective layer provided on the second surface of the metal layer and an adhesive layer provided between the metal layer and the protective layer.

9. The encapsulation film according to claim 1, wherein the encapsulation layer is formed with a single layer or two or more layers.

10. The encapsulation film according to claim 1, wherein the encapsulation layer comprises a first layer comprising an encapsulating resin having a glass transition temperature of 85 C. or more.

11. The encapsulation film according to claim 1, wherein the encapsulation layer comprises a second layer comprising an encapsulating resin having a glass transition temperature of 0 C. or less.

12. The encapsulation film according to claim 1, wherein the encapsulation layer comprises a moisture absorbent.

13. A method of manufacturing the encapsulation film according to claim 1, comprising cutting a side of the encapsulation layer.

14. The method according to claim 13 comprising cutting a side of the a metal layer.

15. The method according to claim 14, wherein the cutting of a side of the metal layer is performed using a CO.sub.2 laser, an optical fiber laser or a knife cutter.

16. The method according to claim 14, wherein the cutting of a side of the metal layer is performed using a laser beam having a size of 1 m to 30 m.

17. The method according to claim 13, wherein the cutting of a side of the encapsulation layer is performed using a CO.sub.2 laser or an optical fiber laser.

18. The method according to claim 13, wherein the cutting of a side of the encapsulation layer is performed using a laser beam having a size of 50 m to 500 m.

19. An organic electronic device comprising a substrate, an organic electronic element formed on the substrate, and the encapsulation film according to claim 1 configured to encapsulate an entire surface of the organic electronic element.

20. A method of manufacturing an organic electronic device, comprising: applying the encapsulation film according to claim 1 to a substrate having an organic electronic element formed thereon so as to cover the organic electronic element; and curing the encapsulation film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1 and 2 show a cross-sectional view of an encapsulation film according to an example of the present invention; and

(2) FIG. 3 shows a cross-sectional view of an organic electronic device according to an example of the present invention.

LIST OF REFERENCE NUMERALS

(3) 1: encapsulation film 11: metal layer 111: first surface 112: second surface 12: encapsulation layer 121: first layer or second layer of encapsulation layer 122: first layer or second layer of encapsulation layer a: size of gap (width) b: thickness of encapsulation layer c: size of cured part (width) d: size of inclined part (width) e: size of protrusion 13: adhesive layer 14: protective layer 2: substrate 21: organic electronic element

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

(4) Hereinafter, the above-described content will be described in more detail with reference to examples and comparative examples. However, the present application is not limited to the following examples.

Example 1

(5) (1) Preparation of Second Layer Solution of Encapsulation Layer

(6) 60 g of a polyisobutene resin (a weight average molecular weight of 450,000) and 40 g of a hydrogenated dicyclopentadiene-based resin (a softening temperature of 125 C.) as a tackifier were added into a reactor at room temperature, then 20 g of a multifunctional acrylic monomer (TMPTA) and 1 g of a photoinitiator were added thereto, and dilution with toluene was performed so that the resulting solution had a solid content of about 25 wt %.

(7) (2) Preparation of Second Layer Solution of Encapsulation Layer

(8) 100 g of calcined dolomite as a moisture absorbent and toluene as a solvent were mixed at solid concentration of 50 wt % to prepare a moisture absorbent solution. 70 g of a polyisobutene resin (a weight average molecular weight of 450,000) and 30 g of a hydrogenated dicyclopentadiene-based resin (a softening temperature of 125 C.) as a tackifier were added into a reactor at room temperature, then 30 g of a multifunctional acrylic monomer (TMPTA) and 2 g of a photoinitiator were added thereto, and dilution with toluene was performed so that the resulting solution had a solid content of about 25 wt %. The moisture absorbent solution prepared in advance was mixed with the resulting solution and homogenized.

(9) 3) Preparation of Encapsulation Layer

(10) The second layer solution prepared in step (1) was applied on a releasing surface of releasing PET and dried at 110 C. for 10 minutes to form a layer having a thickness of 10 m.

(11) The second layer solution prepared in step (2) was applied on a releasing surface of releasing PET and dried at 130 C. for 3 minutes to form a layer having a thickness of 30 m.

(12) The two layers were laminated to manufacture a multilayer film.

(13) (4) Manufacture of Encapsulation Film

(14) Release-treated PET of the encapsulation layer thus prepared was detached, and the resulting encapsulation layer was laminated so that the second layer formed of the second layer solution prepared in step (2) came in contact with one surface of a metal layer (Invar) prepared in advance.

(15) A laminated and metal-integrated encapsulation film was manufactured so that a size of a gap (a) was 25 m and a width of an inclined part (d) was 5 m while varying conditions of a CO.sub.2 laser (E-400i, Coherent) and a Fiber laser (YLR-300-AC-Y11) (beam size, output, wavelength, speed, repetition rate and the like).

Example 2

(16) A second layer solution was prepared in the same manner as in step (2) of Example 1 except that 60 g of a polyisobutene resin, 40 g of a tackifier, 20 g of a multifunctional acrylic monomer and 1 g of a photoinitiator were added.

(17) An encapsulation film was manufactured in the same manner as in Example 1 except that the second layer formed of the second layer solution prepared in step (2) had a thickness of 50 m, a size of a gap (a) was 180 m, and a width of an inclined part (d) was 60 m.

Example 3

(18) Each layer solution was prepared in the same manner as in Example 1 except that a first layer solution was prepared by the following method instead of the second layer solution prepared in step (1) of Example 1.

(19) A solution (a solid content of 70%), in which 50 g of an epoxy resin (KSR 177, Kukdo Chemical Co., Ltd), 50 g of an epoxy resin (YD-014, Kukdo Chemical Co., Ltd) and 50 g of a phenoxy resin (YP-55, Tohto Kasei Co., Ltd) were diluted with methyl ethyl ketone, was prepared and then homogenized. 3 g of imidazole, a curing agent, (Shikoku Chemicals Corporation) was added to the homogenized solution, and then stirred for 1 hour at a high speed to prepare a first layer solution.

(20) An encapsulation film was manufactured in the same manner as in Example 1 except that a layer having a thickness of 20 m was formed of the first layer solution thus prepared, a layer having a thickness of 30 m was formed of the second layer solution prepared in step (2) of Example 1, a size of a gap (a) was 600 m, and a width of an inclined part (d) was 400 m.

Example 4

(21) (1) Preparation of First Layer Solution of Encapsulation Layer

(22) A first layer solution was prepared in the same manner as in Example 3.

(23) (2) Preparation of First Layer Solution of Encapsulation Layer

(24) 100 g of calcined dolomite as a moisture absorbent and methyl ethyl ketone as a solvent were mixed at a solid concentration of 50 wt % to prepare a moisture absorbent solution. A solution (a solid content of 70%), in which 50 g of an epoxy resin (KSR 177, Kukdo Chemical Co., Ltd), 50 g of an epoxy resin (YD-014, Kukdo Chemical Co., Ltd) and 50 g of a phenoxy resin (YP-55, Tohto Kasei Co., Ltd) were diluted with methyl ethyl ketone at room temperature in a reactor, was prepared and then homogenized. 3 g of imidazole, a curing agent, (Shikoku Chemicals Corporation) was added to the homogenized solution, and then stirred for 1 hour at a high speed to prepare a first layer solution. The moisture absorbent solution prepared in advance was mixed with the resulting solution and homogenized.

(25) An encapsulation film was manufactured in the same manner as in Example 1 except that a layer having a thickness of 20 m was formed of the first layer solution prepared in step (1), a layer having a thickness of 30 m was formed of the first layer solution prepared in step (2), a size of a gap (a) was 900 m, and a width of an inclined part (d) was 800 m.

Comparative Example 1

(26) An encapsulation film was manufactured in the same manner as in Example 1 except that a size of a gap (a) was 4 m and a width of an inclined part (d) was 1 m.

Comparative Example 2

(27) An encapsulation film was manufactured in the same manner as in Example 3 except that a size of a gap (a) was 15 m and a width of an inclined part (d) was 5 m upon manufacture of an encapsulation film.

Comparative Example 3

(28) (1) Preparation of First Layer Solution of Encapsulation Layer

(29) 100 g of calcined dolomite as a moisture absorbent and methyl ethyl ketone as a solvent were mixed at a solid concentration of 50 wt % to prepare a moisture absorbent solution. A solution (a solid content of 70%), in which 80 g of an epoxy resin (KSR 177, Kukdo Chemical Co., Ltd), 4 g of an epoxy resin (YD-014, Kukdo Chemical Co., Ltd) and 30 g of a phenoxy resin (PKHA, Gabriel Phenoxies, Inc) were diluted with methyl ethyl ketone at room temperature in a reactor, was prepared and then homogenized. 3 g of imidazole, a curing agent, (Shikoku Chemicals Corporation) was added to the homogenized solution, and then stirred for 1 hour at a high speed to prepare a first layer solution. The moisture absorbent solution prepared in advance was mixed with the resulting solution and homogenized.

(30) The first layer solution was applied on a releasing surface of releasing PET and dried at, 130 C. for 7 minutes to form a first layer having a thickness of 50 m.

(31) In addition, a gap (a) was 18 m and a width of an inclined part (d) was 10 m.

(32) An encapsulation film was manufactured in the same manner as in Example 1 except that an encapsulation layer was formed of the single-layered first layer.

Comparative Example 4

(33) An encapsulation film was manufactured in the same manner as in Example 4 except that a size of a gap (a) was 1,100 m and a width of an inclined part (d) was 100 m upon manufacture of an encapsulation film.

Comparative Example 5

(34) An encapsulation film was manufactured in the same manner as in Example 3 except that a size of a gap (a) was 1,200 m and a width of an inclined part (d) was 1,100 m upon manufacture of an encapsulation film.

Experimental Example 1. Contamination Upon Bonding and Curing

(35) An organic electronic element was deposited on a glass substrate, the encapsulation films manufactured in the examples and comparative examples were bonded on the element using a vacuum bonding machine under conditions of 50 C., a degree of vacuum of 50 mTorr, and 0.4 MPa, and then a curing process was performed at 100 C. for 3 hours to manufacture an organic electronic panel. Whether contamination occurs due to the overflow of an encapsulation layer from the end edge of a metal layer to the outside was determined.

Experimental Example 2. Measurement of Mooney Viscosity

(36) Mooney viscosities of encapsulation layers prepared in the examples and comparative examples were measured through ARES commercially available from TA Instruments. The Mooney viscosity was measured according to shear stress under conditions of 5% strain, a frequency of 1 Hz and a temperature of 100 C. using a plate jig having a diameter of 8 mm.

(37) TABLE-US-00001 TABLE 1 Gap of Width of encapsulation inclined Viscosity Contamination layer (a) part (d) (Pa .Math. s) at side Example 1 25 5 10.sup.5 X Example 2 180 60 2 10.sup.4 X Example 3 600 400 4 10.sup.3 X Example 4 900 800 5 10.sup.2 X Comparative 4 1 10.sup.5 Example 1 Comparative 15 5 4 10.sup.3 Example 2 Comparative 18 10 1.5 10 Example 3 Comparative 1100 100 5 10.sup.2 X (electrode Example 4 short) Comparative 1200 1100 4 10.sup.3 X (electrode Example 5 short)

(38) It can be seen that, in the case of Comparative Examples 4 and 5, a size of a gap or a width of an inclined part was significantly large and thus contamination at a side does not occur, but an edge of a metal layer came in contact with an electrode of an organic electronic element, or a foreign material is seated on an edge of an encapsulation layer, and thus an electrode short occurs.